JP5746699B2 - スーパージャンクショントレンチパワーmosfetデバイスの製造 - Google Patents
スーパージャンクショントレンチパワーmosfetデバイスの製造 Download PDFInfo
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Description
この出願は、本出願の譲受人に譲渡された「Super Junction Trench Power MOSFET Devices」と題されるGao等による2009年8月27日に出願された同時係属の米国特許出願第12/548,841号に関連する。
第2型ドーパントのカラムを形成するステップと、
前記第2型ドーパントの前記カラムの両側に酸化物の層を堆積させて、酸化物の第1のカラムと酸化物の第2のカラムとを形成するステップと、
酸化物の前記第1のカラムに隣接して前記第1型ドーパントの第1のカラムを形成するとともに、酸化物の前記第2のカラムに隣接して前記第1型ドーパントの第2のカラムを形成し、前記第2型ドーパントの前記カラムが、酸化物の前記第1および第2のカラムによって、前記第1型ドーパントの前記第1および第2のカラムから分離される、ステップと、
前記第2型ドーパントの前記カラムの上側で前記第1型ドーパントの前記第1のカラムと前記第1型ドーパントの前記第2のカラムとの間に電界効果トランジスタのためのゲート要素を形成するステップと、
を備える方法。
前記第2型ドーパントの前記カラムをソース金属の前記層に対して電気的に短絡させる電気接続部を形成するステップと、
を更に備える概念1の方法。
前記ソース金属を堆積させて前記トレンチを満たすステップと、
を更に備える概念4の方法。
前記第1型ドーパントの基板上にスーパージャンクション構造体を形成するステップであって、前記スーパージャンクション構造体が、前記第1型ドーパントの柱状の第1の領域と前記第1型ドーパントの柱状の第2の領域との間に配置される第2型ドーパントの柱状領域を備え、前記第2型ドーパントの前記領域が、第1の絶縁層によって前記第1型ドーパントの前記第1の領域から分離されるとともに、第2の絶縁層によって前記第1型ドーパントの前記第2の領域から分離される、ステップと、
前記スーパージャンクション構造体上に電界効果トランジスタのゲート要素を形成するステップであって、前記ゲート要素が前記第2型ドーパントの前記領域の長手方向軸と位置合わせされるステップと、
を備える方法。
概念11.ソース金属の層を堆積させるステップと、
前記第2型ドーパントの前記領域をソース金属の前記層に対して短絡させる電気接続部を形成するステップと、
を更に備える概念9の方法。
前記ソース金属を堆積させて前記トレンチを満たすステップと、
を更に備える概念11の方法。
前記第1型ドーパントの基板上にスーパージャンクション構造体を形成するステップであって、前記スーパージャンクション構造体が、前記第1型ドーパントの第1の領域と前記第1型ドーパントの第2の領域との間に配置される第2型ドーパントの領域を備え、前記第2型ドーパントの前記領域および前記第1型ドーパントの前記第1および第2の領域がそれぞれ第2の寸法よりも大きい第1の寸法を有し、前記第1の寸法が第1の方向で測定され、前記第2の寸法が前記第1の方向と直交する第2の方向で測定される、ステップと、
前記スーパージャンクション構造体に結合されるゲート要素を備える電界効果トランジスタを形成して、前記第2型ドーパントの前記領域が前記第1の方向で前記ゲート要素と前記基板との間に位置するようにするステップと、
ソース金属の層を堆積させるステップであって、前記ソース金属が、前記第1の方向および前記第2の方向と直交する第3の方向で前記第2型ドーパントの前記領域に電気的に短絡される、ステップと、
を備える方法。
第2型ドーパントの前記領域を形成する工程と、
前記第2型ドーパントの前記領域の両側に酸化物の層を堆積させて、酸化物の第1のカラムと酸化物の第2のカラムとを形成する工程と、
酸化物の前記第1のカラムに隣接して前記第1型ドーパントの前記第1の領域を形成するとともに、酸化物の前記第2のカラムに隣接して前記第1型ドーパントの前記第2の領域を形成する工程であって、前記第2型ドーパントの前記領域が、酸化物の前記第1および第2のカラムによって、前記第1型ドーパントの前記第1および第2の領域から分離される、工程と、
を備える概念15の方法。
前記ソース金属を堆積させて前記トレンチを満たすステップと、
を更に備える概念15の方法。
Claims (9)
- 第1型ドーパントのチャネルを有するスーパージャンクショントレンチパワー金属酸化膜半導体電界効果トランジスタ(MOSFET)デバイスを製造する方法であって、
前記第1型ドーパントの基板上に第2型ドーパントのカラムを形成するステップと、
前記第2型ドーパントの前記カラムの両側に酸化物の層を堆積させて、前記基板上に酸化物の第1のカラムと前記基板上に酸化物の第2のカラムとを形成するステップと、
酸化物の前記第1のカラムに隣接して前記基板上に前記第1型ドーパントの第1のカラムを形成するとともに、酸化物の前記第2のカラムに隣接して前記基板上に前記第1型ドーパントの第2のカラムを形成し、前記第2型ドーパントの前記カラムが、酸化物の前記第1および第2のカラムによって、前記第1型ドーパントの前記第1および第2のカラムから分離される、ステップと、
前記第2型ドーパントの前記カラムの上側で前記第1型ドーパントの前記第1のカラムと前記第1型ドーパントの前記第2のカラムとの間に電界効果トランジスタのためのゲート要素を形成するステップと、
前記第1型ドーパントの前記第1のカラムの上側で前記ゲート要素と隣接するゲート要素との間にトレンチを形成するステップと、
前記トレンチと前記第1型ドーパントの前記第1のカラムとの間に、前記トレンチよりも幅が広い前記第2型ドーパントの領域を注入するステップと、
前記トレンチを満たすようにソース金属を堆積させるステップであって、前記領域がソース金属に接触し、前記領域が前記トレンチ内の前記ソース金属を前記第1型ドーパントの前記第1のカラムから分離するステップと、
を備える方法。 - 前記第2型ドーパントの前記カラムを前記ゲート要素から分離するために前記ゲート要素を形成する前に前記第2型ドーパントの前記カラムの上側に酸化物層を堆積させるステップを更に備える請求項1に記載の方法。
- 前記第1型ドーパントがn型ドーパントを備える場合には前記第2型ドーパントがp型ドーパントを備え、前記第1型ドーパントがp型ドーパントを備える場合には前記第2型ドーパントがn型ドーパントを備える請求項1に記載の方法。
- 前記第2型ドーパントの前記カラムを前記ソース金属の層に対して電気的に短絡させる電気接続部を形成するステップを更に備える請求項1に記載の方法。
- 前記ゲート要素と前記トレンチとの間に前記第2型ドーパントのボディ領域と前記第1型ドーパントのソース領域とを形成するステップを更に備え、前記ボディ領域および前記ソース領域が前記トレンチ内の前記ソース金属に露出して接触する請求項1に記載の方法。
- 前記トレンチが前記第1型ドーパントの前記第1のカラムの長手方向軸と位置合わせされる請求項1に記載の方法。
- 前記第1型ドーパントの前記カラムおよび前記第2型ドーパントの前記カラムがそれぞれ第1の方向と直交する第2の方向で測定される第2の寸法より大きい第1の方向で測定される第1の寸法を有し、
前記ソース金属が前記第1の方向および前記第2の方向の両方と直交する第3の方向で前記第2型ドーパントのカラムに電気的に短絡される請求項4に記載の方法。 - 前記第1型ドーパントがp型ドーパントを含み、前記第2型ドーパントがn型ドーパントを含む請求項1に記載の方法。
- 前記トレンチが前記トレンチの長手軸の方向において前記第1のカラムの方へ延在し、
前記領域が前記長手軸の方向において、前記トレンチと前記第1型ドーパントの前記第1のカラムとの間にある請求項8に記載の方法。
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JP2013503492A (ja) | 2013-01-31 |
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EP2471102A2 (en) | 2012-07-04 |
EP2471102A4 (en) | 2014-03-05 |
US9443974B2 (en) | 2016-09-13 |
CN103098219A (zh) | 2013-05-08 |
CN103098219B (zh) | 2016-02-10 |
US20110053326A1 (en) | 2011-03-03 |
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