JP4609797B2 - 薄膜デバイス及びその製造方法 - Google Patents
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- 239000010409 thin film Substances 0.000 title claims description 150
- 238000004519 manufacturing process Methods 0.000 title claims description 59
- 239000010408 film Substances 0.000 claims description 452
- 239000004065 semiconductor Substances 0.000 claims description 236
- 229910052760 oxygen Inorganic materials 0.000 claims description 129
- 239000001301 oxygen Substances 0.000 claims description 129
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 127
- 239000012212 insulator Substances 0.000 claims description 101
- 238000000034 method Methods 0.000 claims description 89
- 229910052751 metal Inorganic materials 0.000 claims description 63
- 239000002184 metal Substances 0.000 claims description 63
- 230000001590 oxidative effect Effects 0.000 claims description 41
- 230000001681 protective effect Effects 0.000 claims description 31
- 239000000758 substrate Substances 0.000 claims description 31
- 238000009832 plasma treatment Methods 0.000 claims description 27
- 230000015572 biosynthetic process Effects 0.000 claims description 22
- 229910052738 indium Inorganic materials 0.000 claims description 7
- 229910052733 gallium Inorganic materials 0.000 claims description 6
- 239000007789 gas Substances 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 6
- 238000009413 insulation Methods 0.000 claims description 6
- 239000011347 resin Substances 0.000 claims description 6
- 229920005989 resin Polymers 0.000 claims description 6
- 239000002904 solvent Substances 0.000 claims description 6
- 229910052725 zinc Inorganic materials 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 3
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 113
- 238000010586 diagram Methods 0.000 description 33
- 230000007547 defect Effects 0.000 description 26
- 230000003647 oxidation Effects 0.000 description 25
- 238000007254 oxidation reaction Methods 0.000 description 25
- 239000002344 surface layer Substances 0.000 description 19
- 238000004544 sputter deposition Methods 0.000 description 15
- 229910052581 Si3N4 Inorganic materials 0.000 description 13
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 13
- 238000009751 slip forming Methods 0.000 description 9
- 239000011229 interlayer Substances 0.000 description 8
- 238000000059 patterning Methods 0.000 description 7
- 230000003247 decreasing effect Effects 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 4
- 230000001678 irradiating effect Effects 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 150000002926 oxygen Chemical class 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910007541 Zn O Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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Description
が好ましい。
図1乃至図8は、第1の実施形態に係る薄膜トランジスタ(薄膜デバイス)100(図8)の製造方法を示す一連の工程図である。
図9乃至図14は、第1の実施形態に係る薄膜トランジスタ(薄膜デバイス)200(図14)の製造方法を示す一連の工程図である。
図15乃至図19は、第3の実施形態に係る薄膜トランジスタ(薄膜デバイス)300(図19)の製造方法を示す一連の工程図である。
図20乃至図24は、第4の実施形態に係る薄膜トランジスタ(薄膜デバイス)400の製造方法を示す一連の工程図である。
上記の第1乃至第4の実施形態では、薄膜トランジスタ100、200、300、400の酸化物半導体膜14を一度に成膜する例を説明したが、第5の実施形態では、酸化物半導体膜14を複数層に分けて成膜する例を説明する。
11 ゲート電極
12 ゲート絶縁膜
131 第1酸化性処理
132 第2酸化性処理
14 酸化物半導体
14A 第1界面層
14E 第2界面層
14B バルク層
15 還元性処理
16 ソース・ドレイン電極
18 保護絶縁膜
19 コンタクトホール
21 下地絶縁膜
23 層間絶縁膜
50 絶縁膜
100 薄膜トランジスタ(薄膜デバイス)
200 薄膜トランジスタ(薄膜デバイス)
300 薄膜トランジスタ(薄膜デバイス)
400 薄膜トランジスタ(薄膜デバイス)
Claims (16)
- 第1絶縁体と、前記第1絶縁体の上の酸化物半導体膜と、前記酸化物半導体膜の端部上のソース・ドレイン電極と、前記ソース・ドレイン電極及び前記酸化物半導体膜の上の第2絶縁体とを有する積層構造を備え、前記酸化物半導体膜により活性層が構成された薄膜デバイスにおいて、
前記酸化物半導体膜において、
前記第1絶縁体との界面に位置する部分である第1界面層と、前記第2絶縁体との界面に位置する部分である第2界面層の酸素空孔密度が、前記酸化物半導体膜において前記第1界面層、第2界面層及び前記ソース・ドレイン電極との界面に位置する部分である第3界面層以外の部分であるバルク層の酸素空孔密度よりも小さく、
前記第3界面層の酸素空孔密度が、前記バルク層の酸素空孔密度よりも大きいことを特徴とする薄膜デバイス。 - 前記酸化物半導体膜は、少なくともZn、Ga、Inのうちの何れか一元素を含む非晶質酸化物であることを特徴とする請求項1に記載の薄膜デバイス。
- 前記酸化物半導体膜は、少なくともZn、Ga、Inのうちの何れか一元素を含む結晶酸化物であることを特徴とする請求項1に記載の薄膜デバイス。
- 前記酸化物半導体膜は、非晶質酸化物をレーザの照射により結晶化させて形成したものであることを特徴とする請求項3に記載の薄膜デバイス。
- 前記酸化物半導体膜は、粒子状の酸化物半導体を溶媒に溶かしその酸化物半導体溶液を塗布又は印刷しその後加熱処理で溶媒を蒸発させることにより成膜されたものであることを特徴とする請求項1に記載の薄膜デバイス。
- 前記積層構造は、絶縁性基板上に形成されていることを特徴とする請求項1乃至5の何れか一項に記載の薄膜デバイス。
- 前記絶縁性基板は、ガラス基板又は樹脂基板であることを特徴とする請求項6に記載の薄膜デバイス。
- 当該薄膜デバイスは、薄膜トランジスタ又は薄膜ダイオードであることを特徴とする請求項1乃至7の何れか一項に記載の薄膜デバイス。
- 第1絶縁体上に酸化物半導体膜を形成する工程と前記酸化物半導体膜上にソース・ドレイン金属膜を形成する工程と前記酸化物半導体膜上に第2絶縁体を形成する工程とを行うことにより、前記第1絶縁体、前記酸化物半導体膜、前記ソース・ドレイン金属膜及び前記第2絶縁体を含む積層構造を備え、前記酸化物半導体膜により活性層が構成された薄膜デバイスを製造する方法において、
前記第1絶縁体、前記第2絶縁体、前記ソース・ドレイン金属膜及び前記酸化物半導体膜の成膜工程とは別に、
酸化性処理を行うことにより、前記酸化物半導体膜において、前記第1絶縁体との界面に位置する部分である第1界面層と、前記第2絶縁体との界面に位置する部分である第2界面層の酸素空孔密度を、前記酸化物半導体膜において前記第1界面層、第2界面層及び前記ソース・ドレイン金属膜との界面に位置する部分である第3界面層以外の部分であるバルク層の酸素空孔密度よりも小さくし、かつ、
還元性処理を行うことにより、前記第3界面層の酸素空孔密度を前記バルク層の酸素空孔密度よりも大きくすることを特徴とする薄膜デバイスの製造方法。 - 第1絶縁体上に酸化物半導体膜を形成する工程と前記酸化物半導体膜上にソース・ドレイン金属膜を形成する工程と前記酸化物半導体膜上に第2絶縁体を形成する工程とを行うことにより、前記第1絶縁体、前記酸化物半導体膜、前記ソース・ドレイン金属膜及び前記第2絶縁体を含む積層構造を備え、前記酸化物半導体膜により活性層が構成された薄膜デバイスを製造する方法において、
前記酸化物半導体膜は、酸化物半導体薄層の成膜と、酸化性処理と、を交互に複数回繰り返すことにより形成し、
前記酸化物半導体膜において、前記第1絶縁体との界面に位置する部分である第1界面層と、前記第2絶縁体との界面に位置する部分である第2界面層の酸素空孔密度を、前記酸化物半導体膜において前記第1界面層、第2界面層及び前記ソース・ドレイン金属膜との界面に位置する部分である第3界面層以外の部分であるバルク層の酸素空孔密度よりも小さくし、かつ、
還元性処理を行うことにより、前記第3界面層の酸素空孔密度を前記バルク層の酸素空孔密度よりも大きくすることを特徴とする薄膜デバイスの製造方法。 - 第1絶縁体上に酸化物半導体膜を形成する工程と前記酸化物半導体膜上にソース・ドレイン金属膜を形成する工程と前記酸化物半導体膜上に第2絶縁体を形成する工程とを行うことにより、前記第1絶縁体、前記酸化物半導体膜、前記ソース・ドレイン金属膜及び前記第2絶縁体を含む積層構造を備え、前記酸化物半導体膜により活性層が構成された薄膜デバイスを製造する方法において、
前記酸化物半導体膜は、酸化物半導体薄層の成膜と、酸化性処理と、を交互に複数回繰り返すことにより形成し、
前記第1絶縁体、前記第2絶縁体、前記ソース・ドレイン金属膜及び前記酸化物半導体膜の成膜工程とは別に、
酸化性処理を行うことにより、前記酸化物半導体膜において、前記第1絶縁体との界面に位置する部分である第1界面層と、前記第2絶縁体との界面に位置する部分である第2界面層の酸素空孔密度を、前記酸化物半導体膜において前記第1界面層、第2界面層及び前記ソース・ドレイン金属膜との界面に位置する部分である第3界面層以外の部分であるバルク層の酸素空孔密度よりも小さくし、かつ、
還元性処理を行うことにより、前記第3界面層の酸素空孔密度を前記バルク層の酸素空孔密度よりも大きくすることを特徴とする薄膜デバイスの製造方法。 - 前記酸化性処理が、酸素プラズマとオゾンプラズマとのうちの少なくとも何れか一方を用いるプラズマ処理であることを特徴とする請求項9乃至11の何れか一項に記載の薄膜デバイスの製造方法。
- 前記薄膜デバイスの前記積層構造は、ゲート金属膜と、前記第1絶縁体としてのゲート絶縁膜と、前記酸化物半導体膜と、前記ソース・ドレイン金属膜と、前記第2絶縁体としての保護絶縁膜と、をこの順に成膜することにより形成し、
前記ゲート絶縁膜の成膜後に、前記酸化性処理と、前記酸化物半導体膜の成膜と、を大気に曝すことなく、この順で連続して行うことを特徴とする請求項9乃至12の何れか一項に記載の薄膜デバイスの製造方法。 - 前記薄膜デバイスの前記積層構造は、ゲート金属膜と、前記第1絶縁体としてのゲート絶縁膜と、前記酸化物半導体膜と、前記ソース・ドレイン金属膜と、前記第2絶縁体としての保護絶縁膜と、をこの順に成膜することにより形成し、
前記酸化物半導体膜を所望の形状にパターン形成した後で、還元性処理と、前記ソース・ドレイン金属膜の成膜と、を大気に曝すことなく、この順で連続して行うことを特徴とする請求項9乃至12の何れか一項に記載の薄膜デバイスの製造方法。 - 前記還元性処理が、希ガスプラズマ、水素ガスプラズマ、窒素ガスプラズマ及びこれらの混合ガスプラズマのうちの少なくとも何れか1つを用いるプラズマ処理であることを特徴とする請求項14に記載の薄膜デバイスの製造方法。
- 前記薄膜デバイスの前記積層構造は、ゲート金属膜と、前記第1絶縁体としてのゲート絶縁膜と、前記酸化物半導体膜と、前記ソース・ドレイン金属膜と、前記第2絶縁体としての保護絶縁膜と、をこの順に成膜することにより形成し、
前記ソース・ドレイン金属膜を所望の形状にパターン形成した後で、前記酸化性処理と、前記保護絶縁膜の成膜と、を大気に曝すことなく、この順で連続して行うことを特徴とする請求項9乃至12の何れか一項に記載の薄膜デバイスの製造方法。
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US8420442B2 (en) | 2013-04-16 |
US20150056747A1 (en) | 2015-02-26 |
US9209026B2 (en) | 2015-12-08 |
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