KR102638425B1 - 기판 표면 내에 형성된 오목부를 충진하기 위한 방법 및 장치 - Google Patents

기판 표면 내에 형성된 오목부를 충진하기 위한 방법 및 장치 Download PDF

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KR102638425B1
KR102638425B1 KR1020200018273A KR20200018273A KR102638425B1 KR 102638425 B1 KR102638425 B1 KR 102638425B1 KR 1020200018273 A KR1020200018273 A KR 1020200018273A KR 20200018273 A KR20200018273 A KR 20200018273A KR 102638425 B1 KR102638425 B1 KR 102638425B1
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reactant
injection amount
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KR1020200018273A
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KR20200102360A (ko
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빌리아미 포레
쩌청 리우
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에이에스엠 아이피 홀딩 비.브이.
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • H—ELECTRICITY
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    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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    • C23C16/24—Deposition of silicon only
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/52—Controlling or regulating the coating process
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
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Abstract

기판을 반응 챔버에 제공하는 단계; 제1 주입량으로 제1 반응물을 기판에 도입하는 단계; 제2 주입량으로 제2 반응물을 기판에 도입하되, 제1 및 제2 반응물이 반응하는 중첩 영역에서 제1 및 제2 주입량이 중첩하고 제1 및 제2 영역이 중첩하지 않는 실질적으로 미반응된 초기 영역을 남기는 단계; 제3 주입량으로 제3 반응물을 기판에 도입하고, 제3 반응물은 제1 또는 제2 반응물과 반응하여 증착된 재료를 형성하는 단계; 및 증착된 재료를 에칭하는 단계에 의해 하나 이상의 오목부를 충진하는 방법을 제공한다. 오목부를 충진하기 위한 장치도 또한 개시된다.

Description

기판 표면 내에 형성된 오목부를 충진하기 위한 방법 및 장치{METHOD AND APPARATUS FOR FILLING A RECESS FORMED WITHIN A SUBSTRATE SURFACE}
본 발명은 일반적으로 전자 소자 제조용 방법 및 장치에 관한 것이다. 보다 구체적으로, 본 발명은 전자 소자의 제조 중에 기판의 표면 내에 형성된 하나 이상의 오목부를 충진하기 위한 방법 및 장치에 관한 것이다.
집적 회로(IC)와 같은 전자 소자의 제조 중에 갭 또는 트렌치와 같은 오목부가 기판 내에 생성될 수 있다. 오목부 충진은 특정 응용에 따라 다양한 형태를 취할 수 있다.
일반적인 트렌치 충진 공정은 트렌치 내에 공동을 형성하는 결점을 가질 수 있다. 트렌치가 완전히 충진되기 전에 충진 재료가 트렌치의 상부 근처에 수축부를 형성하는 경우, 공동을 형성할 수 있다. 이러한 공동은 집적 회로 상의 소자의 소자 분리뿐만 아니라 IC의 전반적인 구조적 무결성을 손상시킬 수 있다. 트렌치 충진 중에 공동 형성을 방지하는 것은, 불행히도 트렌치 상에 종종 크기 제약을 줄 수 있으며, 이는 소자의 소자 패킹 밀도를 제한할 수 있다.
트렌치가 소자 분리를 위해 충진되는 경우, 소자 분리의 유효성을 측정하는 핵심 매개 변수는 필드 임계 전압 즉, 인접한 분리 소자를 연결하는 기생 전류를 생성하는 데 필요한 전압일 수 있다. 필드 임계 전압은 공정 처리 중에 트렌치 폭, 트렌치 충진 재료의 유전 상수, 기판 도핑, 필드 임플란트 도즈, 및 기판 바이어스와 같은 다수의 물리적 및 재료 특성에 의해 영향을 받을 수 있다.
공동 형성은 트렌치 깊이를 감소시키고/감소시키거나 트렌치 측벽을 점점 가늘게 함으로써 완화될 수 있어서, 트렌치의 개구는 트렌치의 하부보다 상부에서 더 넓을 수 있다. 트렌치 깊이를 줄이는 트레이드 오프는 소자 분리의 효과성을 감소시킬 수 있는 반면에, 점점 가늘게 한 측벽을 갖는 트렌치의 더 큰 상부 개구도 집적 회로 면적을 추가적으로 소모할 수 있다. 이러한 문제는 소자 치수를 감소시키려 하는 경우, 점점 문제가 될 수 있다. 따라서, 오목부를 충진하기 위한 개선된 방법 및 장치가 바람직할 수 있다.
본 개시의 다양한 구현예는 기판의 표면 내에서 트렌치와 같은 오목부를 충진하는 방법에 관한 것이다. 본 개시의 다양한 구현예가 이전 방법의 문제점을 해결하는 방식은 이하에서 보다 상세히 논의되면서, 일반적으로 본 개시의 다양한 구현예는 기판 표면 내에 오목부를 충진하기에 적절한 개선 방법과 장치를 제공한다. 예를 들어, 예시적인 방법 및 장치는 원하는 재료, 예컨대 유전체 재료로 고 종횡비 오목부를 이음매 없이 충진하는 데 사용될 수 있다.
본 개시의 적어도 하나의 구현예에 따라, 기판 표면 내에 형성된 오목부를 충진하는 방법은, 상기 기판을 반응 챔버에 제공하는 단계; 상기 오목부의 표면 상에 제1 주입량으로 제1 반응물을 상기 기판에 도입하는 단계; 상기 오목부의 표면 상에 제2 주입량으로 제2 반응물을 상기 기판에 도입하되, 상기 제1 및 상기 제2 주입량은 중첩 영역에서 중첩하고, 상기 제1 및 상기 제2 주입량이 중첩하지 않는 영역을 남기는 단계; 제3 주입량으로 제3 반응물을 상기 기판에 도입하고, 상기 제3 반응물은 상기 제1 및 상기 제2 주입량이 중첩하지 않는 영역에서 상기 제1 또는 제2 반응물과 반응함으로써 재료를 증착하는 단계; 및 상기 오목부 내에 상기 증착된 재료를 에칭하는 단계를 포함한다. 다양한 양태에 따라, 상기 중첩 영역 내의 제1 반응물의 농도는, 상기 제1 및 제2 영역이 중첩되지 않는 영역에서의 제1 반응물 농도와 상이하다. 제1 반응물을 기판에 도입하는 단계, 제2 반응물을 기판에 도입하는 단계, 및 제3 반응물을 기판에 도입하는 단계를 포함하는 증착 사이클 수는, 증착된 재료를 에칭하는 단계를 진행하는 방법 이전에 1회 이상 반복될 수 있다. 또한, 증착된 재료를 에칭하는 단계와 조합한 하나 이상의 증착 사이클은 여러 회 반복되어 오목부를 충진할 수 있다. 또 다른 양태에 따라, 상기 제1 및 제2 반응물 중 하나는 포화 주입량으로 도입되고, 상기 제1 및 제2 반응물 중 다른 하나는 아포화 주입량으로 도입된다. 또 다른 예시에 따라, 증착된 재료를 에칭하는 단계 중에, 상기 재료의 에칭 속도는 상기 제1 및 제2 영역이 중첩되지 않는 영역에 비해 중첩 영역에서 더 높을 수 있다. 반응물이 오목부 상부의 중첩 영역에서 중첩하도록 상기 제1 및 제2 반응물의 주입량을 가짐으로써, 상기 제1 및 제2 반응물은 오목부 상부에서 반응하여 오목부 상부에서 추가 반응을 차단 또는 완화시킬 수 있다. 상기 제1 및 제2 반응물이 중첩하지 않는 오목부 하부의 초기 미반응 영역에서, 상기 제1 및 제2 반응물은 제3 반응물과 여전히 반응할 수 있고, 이에 따라 오목부를 하부에서 상향으로 충진할 수 있다.
또 다른 구현예에 따라, 예를 들어 개선되거나 적어도 대안적인 오목부 충진 방법, 예컨대 본원에 설명된 방법을 제공하는 반도체 처리 장치가 제공된다. 본 개시의 적어도 하나의 구현예에 따라, 반도체 처리 장치는, 오목부를 그 안에 형성한 표면을 포함하는 기판을 수용하기 위한 하나 이상의 반응 챔버; 상기 반응 챔버 중 하나와 제1 밸브를 통해 가스 연통하는 제1 반응물용 제1 공급원; 상기 반응 챔버 중 하나와 제2 밸브를 통해 가스 연통하는 제2 반응물용 제2 공급원; 상기 반응 챔버 중 하나와 제3 밸브를 통해 가스 연통하는 제3 반응물용 제3 공급원; 상기 반응 챔버 중 하나와 제4 밸브를 통해 가스 연통하는 에천트 공급원; 및 상기 제1, 제2, 제3, 및 제4 가스 밸브와 작동 가능하게 연결된 제어기를 포함하고, 상기 제어기는, 상기 오목부 상에 제1 주입량으로 상기 제1 반응물을 상기 기판에 도입하는 단계; 상기 오목부 상에 제2 주입량으로 제2 반응물을 상기 기판에 도입하되, 상기 제1 및 상기 제2 주입량은 중첩 영역에서 중첩하고, 상기 제1 및 상기 제2 주입 영역이 중첩하지 않는 영역(예, 상기 제1 및 제2 주입량 중 하나의 농도는 상기 제1 및 제2 주입량의 다른 하나의 약 1% 미만이거나 무시할 수준이고/수준이거나 상기 중첩 영역에서 상기 동일한 반응물 농도의 약 1% 미만임)을 남기는 단계; 제3 주입량으로 제3 반응물을 상기 기판에 도입하고 상기 제3 반응물은 상기 제1 및 상기 제2 주입 영역이 중첩하지 않는 영역에서 상기 제1 또는 제2 반응물과 반응함으로써 재료를 증착하는 단계; 및 상기 오목부 내에 상기 증착된 재료를 에칭하는 단계를 제어하도록 구성되고 프로그래밍된다. 제1 반응물을 도입하는 단계, 제2 반응물을 도입하는 단계, 및 제3 반응물을 도입하는 단계를 포함하는 증착 사이클은, 전술한 바와 같이 증착된 재료를 에칭하는 단계 이전에 반복될 수 있다. 유사하게, 증착된 재료를 에칭하는 단계와 조합한 하나 이상의 증착 사이클은, 여러 회 반복되어 오목부를 충진할 수 있다.
본 개시의 또 다른 예시적인 구현예에 따라, 반도체 구조는 본원에 기술된 방법 및/또는 장치를 사용하여 형성될 수 있다.
선행 기술에 비해 달성되는 장점 및 본 발명을 요약하기 위해, 본 발명의 특정 목적 및 장점이 앞서 본원에 기술되었다. 물론, 모든 목적 및 장점들이 본 발명의 임의의 특별한 구현예에 따라 반드시 달성되는 것이 아니라는 것을 이해하여야 한다. 따라서, 예들 들어 당업자는, 본 발명이, 본원에 교시 또는 제안될 수 있는 다른 목적 또는 장점을 반드시 달성하지 않고서, 본원에 교시되거나 제시된 바와 같은 하나의 장점 또는 여러 장점을 달성하거나 최적화하는 방식으로 구현되거나 수행될 수 있다는 것을 인식할 것이다. 본 발명은 개시된 임의의 특정 구현예(들)에 한정되지 않으며, 이들 및 다른 구현예는 도면을 참조한 특정 구현예의 다음의 상세한 설명으로부터 당업자에게 용이하게 분명할 것이다.
다음의 예시적인 도면과 연관하여 고려되는 경우에 발명의 상세한 설명 및 청구범위를 참조함으로써, 본 개시의 예시적인 구현예에 대해 더욱 완전한 이해를 얻을 수 있다.
도 1a는 본 개시의 구현예 중 적어도 하나에 따라 오목부를 충진하기에 적절한 PEALD(플라즈마 강화 원자층 증착) 장치의 개략적인 표시를 나타낸다.
도 1b는 본 개시의 구현예 중 적어도 하나에 따라 사용할 수 있는 유동 통과 시스템(FPS)을 이용한 전구체 공급 시스템의 개략적인 표시를 나타낸다.
도 2는 본 개시의 적어도 하나의 구현예에 따라 오목부를 충진하기 위한 방법의 흐름도를 나타낸다.
도 3은 본 개시의 다른 구현예에 따라 오목부를 충진하기 위한 방법의 흐름도를 나타낸다.
도 4는 본 개시의 다른 구현예에 따른 구조체를 나타낸다.
특정 구현예 및 실시예가 아래에 개시되었지만, 당업자는 본 발명이 구체적으로 개시된 구현예 및/또는 본 발명의 용도 및 이들의 명백한 변형물 및 균등물을 넘어 확장된다는 것을 이해할 것이다. 따라서, 개시된 발명의 범주는, 특정하게 개시되며 후술되는 구현예에 의해 제한되지 않는 것으로 의도된다.
이제 도면을 참조하면, 도 2는 본 개시의 적어도 하나의 구현예에 따른 방법(100)의 흐름도를 나타낸다. 방법(100)은, 예를 들어 구조체의 제조 중에 생성된 갭 또는 특징부라고 종종 지칭되는 오목부를 하나 이상 충진하는 데 사용될 수 있다. 오목부는 40 미만 또는 심지어 20 nm 폭일 수 있고/있거나 40, 100, 200 또는 심지어 400 nm 이상의 깊이일 수 있다. 오목부의 종횡비는 예를 들어 약 5:1 내지 약 30:1의 범위일 수 있다.
도 2에 나타낸 바와 같이, 방법(100)은, 상기 기판을 반응 챔버 내에 제공하는 단계(105), 상기 오목부의 표면 상에 제1 주입량으로 제1 반응물을 상기 기판에 도입하는 단계(110), 상기 오목부의 표면 상에 제2 주입량으로 제2 반응물을 상기 기판에 도입하는 단계(120), 제3 주입량으로 제3 반응물을 상기 기판에 도입하고, 상기 제3 반응물은 상기 제1 및 상기 제2 주입량이 중첩하지 않는 영역에서 상기 제1 또는 제2 반응물과 반응함으로써 재료를 증착하는 단계(130), 증착된 재료를 에칭하는 단계(140)를 포함한다.
단계(105)는 기판을 반응 챔버에 제공하는 단계를 포함한다. 본원에 사용된 바와 같이, "기판"은 재료가 증착될 수 있는 표면을 갖는 임의의 재료를 지칭한다. 기판은, 실리콘(예, 단결정 실리콘)과 같은 벌크 재료를 포함하거나 벌크 재료의 위에 놓이는 하나 이상의 층을 포함할 수 있다. 또한, 기판은, 기판의 층의 적어도 일부 내에 또는 그 위에 형성된 다양한 토폴로지, 예컨대 오목부(예, 트렌치 또는 비아), 라인 등을 포함할 수 있다. 구체적인 예로서, 기판은 SiN, SiOx 및/또는 W 층을 포함할 수 있고, 이들 층 중 적어도 하나는 그 안에 형성된 적어도 하나의 오목부를 갖는다.
단계(105) 중에, 기판은, 예를 들어 기판 히터 및/또는 복사 방식 또는 다른 히터를 사용해서 원하는 온도로 가져다 놓을 수 있다. 단계(110 내지 130 또는 110 내지 140) 중의 온도는 약 100℃ 내지 약 550℃ 또는 약 250℃ 내지 약 450℃의 범위일 수 있다. 이러한 단계 중의 반응 챔버 내 압력은 약 1 토르 내지 약 9 토르, 또는 약 3 토르 내지 약 7 토르일 수 있다.
본 개시의 다양한 실시예에 따라, 반응물이 오목부 상부에서 중첩하도록 상기 제1 및 제2 반응물의 주입량을 가짐으로써, 상기 제1 및 제2 반응물은 상부(중첩 영역)에서 반응하여 오목부 상부에서 추가 반응을 차단 또는 실질적으로 차단시킬 수 있다. 상기 제1 및 제2 반응물이 중첩하지 않는(예, 반응물 중 하나의 농도가 매우 낮은 경우, 예를 들어 다른 것보다 약 1% 미만이고/미만이거나 중첩 영역에서의 농도의 약 1% 미만인) 오목부 하부에서, 반응물은 여전히 제3 반응물과 반응함으로써 재료를 증착할 수 있다.
본 개시의 예시에 따라, 제1 및 제2 반응물 중 하나의 주입량은 포화되어(예, 비교적 높은 양 또는 농도 및/또는 긴 펄스 시간), 상기 제1 및 제2 반응물 중 하나는 전체 또는 실질적으로 전체 오목부를 덮는 반면, 상기 제1 및 제2 반응물 중 다른 하나가 아포화되어(예, 비교적 짧은 펄스 시간 및/또는 낮은 농도/양) 상기 제1 및 제2 반응물을 오목부의 상부(중첩) 영역만 또는 실질적으로 그 부분만 용이하도록 한다. 이러한 맥락에서, 비교적 낮음은, 하나의 반응물에 비해 다른 하나의 반응물의 농도 및/또는 펄스 양 또는 시간이 약 10, 5, 2, 또는 1% 이하를 의미할 수 있고, 비교적 높음은, 하나의 반응물에 대해 다른 하나의 반응물의 농도 및/또는 펄스 양 또는 시간이 약 10, 20, 50 또는 약 100배 더 큼을 의미할 수 있다.
증착 사이클은 단계(110 내지 130)를 포함할 수 있다. 증착 사이클은 루프(150)로 도시한 바와 같이 오목부를 충진하기 위해서 여러 회 반복될 수 있다. 증착 사이클은, 예를 들어 약 1 내지 10,000회, 약 5 내지 2,000회, 또는 약 10 내지 1,000회를 반복할 수 있다. 임의의 과량의 반응물 및/또는 부산물은, 반응 챔버 내에서 달리 오염을 야기할 수 있는 반응물 사이의 직접 반응을 회피하기 위해 단계(110 내지 130 및/또는 140) 중 하나 이상(예, 각각) 이후에 제거될 수 있다.
예를 들어, 오목부 상부가 여전히 하부 영역에서의 반응을 위한 반응물을 차단하면, 방법(100)은 또한 루프(160)를 통해 부분적으로 반복될 수도 있다. 또한, 루프(150)를 통한 완전한 반복 및 루프(160)를 통한 부분적인 반복을 조합할 수도 있다. 이런 방식으로 오목부 충진 방법의 속도를 증가시킬 수 있다.
전술한 바와 같이, 제1 및 제2 반응물 중 하나는 포화(비교적 높거나 긴) 주입량으로 도입될 수 있고, 제1 및 제2 반응물 중 다른 하나는 아포화(비교적 낮거나 짧은) 주입량으로 도입될 수 있다. 포화 주입량으로 제공되는 반응물은 오목부의 깊은 곳까지 침투하여 갭의 하부에 도달할 수 있지만, 아포화 주입량으로 제공되는 반응물은 오목부의 깊은 곳까지 침투하지 않고 그 영역에 머무른다. 따라서, 제1 반응물과 제2 반응물 간의 반응은 오목부의 상부/중첩 영역에서만 또는 실질적으로 일어날 수 있고, 이에 따라 상부/중첩 영역에서 추가 반응을 차단하거나 실질적으로 차단할 수 있다.
제1 및 제2 반응물 중 하나는 잠재적 성장 반응물일 수 있는 반면에, 제1 및 제2 반응물 중 다른 하나는 잠재적 성장 반응물과 조합하여 비교적 낮은 성장을 제공하는 저 성장 반응물을 포함할 수 있다. 따라서, 제1 및 제2 반응물 사이의 반응 결과는, 오목부의 하부가 실질적으로 충진되기 전에 재료를 증착함으로써 상부/중첩 영역이 차단될 수 없도록 오목부의 상부/중첩 영역에서 비교적 낮은 성장을 생성할 수 있다.
제1 및 제2 반응물 중 하나는, 하나 이상의 오목부의 전체 표면을 실질적으로 덮는 제1 및 제2 영역 중 상기 대응하는 하나를 덮도록 도입될 수 있다. 제1 및 제2 반응물 중 하나는 다른 반응물에 의존하여 잠재적 성장을 제공하는 잠재적 성장 반응물일 수 있다.
잠재적 성장 반응물인 제1 및 제2 반응물 중 하나는, 실리콘을 포함할 수 있다. 제1/제2/잠재적 성장 반응물은 실란 아민, 실록산 아민, 실라잔 아민, (아미노 실란, 아미노 실록산, 및 아미노 실라잔)으로 이루어진 군으로부터 선택될 수 있다. 예를 들어, 잠재적 성장 반응물은 실란디아민, 예컨대 에어 리퀴드(파리, 프랑스)사의 ALOHATM SAM.24 상표명으로 팔리는 N,N,N',N'-테트라에틸 실란디아민을 포함할 수 있다.
실질적인 저 성장 반응물은 He, Ne, Ar, Kr, Xe, N2, NH3 및 N2H4 중 하나 이상을 포함할 수 있고, 이는 (직접식 또는 원격식) 플라즈마에 의해 선택적으로 활성화될 수 있다. 잠재적인 성장 반응물과 조합된 질소는 오목부의 상부에서 비교적 낮은 성장을 초래할 수 있다. 일부 경우에, 잠재적 성장 반응물을 제공하기 전에 실질적인 저 성장 반응물을 제공하는 것이 유리할 수 있다.
제3 반응물은 잠재적 성장 반응물과 조합하여 비교적 높은 성장을 제공하는 고 성장 반응물을 포함할 수 있다. 제3 반응물이 오목부의 하부에서 잠재적 성장 반응물과 반응할 수 있게 하도록, 제3 반응물이 오목부의 하부에 도달함을 보증하는, 비교적 큰 주입량으로 제3 반응물이 도입될 수 있다. 제1 및 제2 반응물이 이미 오목부의 상부에서 반응할 수 있기 때문에, 제3 반응물에 대한 트렌치 상부에서의 반응은 차단될 수 있다.
제3 반응물은, (직접식 또는 원격식) 플라즈마에 의해 활성화될 수 있는, 물, 과산화수소, 산소 분자 및 오존으로 이루어진 군으로부터 선택되는 하나 이상의 반응물과 같은 산화제를 포함할 수 있다. 실란 아민(예, N,N,N',N'-테트라에틸 실란디아민과 같은 실란디아민)과 조합한 산소는, 갭 하부에 비교적 높은 성장 결과를 가질 수 있다. 예를 들어, 재료를 증착하기 위한 주기적인 반복 반응에서 N,N,N',N'- 테트라에틸 실란디아민, N 플라즈마 및 그 다음 O 플라즈마를 제공할 수 있다. 대안적으로, 재료를 증착하기 위한 주기적인 반복 반응에서, N 플라즈마, N,N,N',N'- 테트라에틸 실란디아민 및 그 다음 O 플라즈마를 제공할 수 있다.
도 2에 나타낸 바와 같이, 적어도 하나의 증착 사이클(단계 110 내지 130) 이후, 상기 증착된 재료를 에칭하는 단계(140)가 수행된다. 단계(140)는, 증착된 재료의 에칭 속도가 오목부의 하부 영역(예, 주입량이 중첩되지 않는 영역)에 비해 오목부의 상부(예, 중첩) 영역에서 더 높도록 구성될 수 있다. 루프(170)에 비해 루프(150, 160)를 다수 반복하는 것은, 예를 들어 오목부의 치수(예, 높이, 폭, 또는 종횡비), 구성(예, 오목부가 얼마나 함께 가까이 있는 정도), 및/또는 기하 구조(예, 오목부 벽의 형상 및/또는 오목부 개구의 형상)에 기초하여 조절될 수 있다.
본 개시의 다양한 예시에 따라, 단계(140)는 건식 에칭 공정을 포함한다. 단계(140) 중에 사용된 에천트는, 예를 들어 직접식 또는 원격식 플라즈마 유닛에 의해 활성화될 수 있다. 사용될 수 있는 예시적인 에천트는 할로겐을 포함하고, 구체적인 예시는 CxFy, 여기서 x와 y는 정수(예, CF4, C2F6, C3F8, 또는 C4F8), CHF3, NF3, SF6, Cl2, BCl3, HBr, 및 HI를 포함한다. 첨가제 가스, 예컨대 N2, O2, Ar, He, NOx등을 추가로 사용하여 단계(140) 중에 증착된 재료의 에칭을 제어할 수 있다. 구체적인 예시로서, 단계(140)는 약 25°C 내지 약 550°C 또는 약 100°C 내지 약 300°C의 기판 온도에서 수행될 수 있다. 반응 챔버 내 압력은 약 0.05 토르 내지 약 5 토르 또는 약 0.2 토르 내지 약 3 토르일 수 있다. 에천트 및/또는 첨가제의 유량은 약 30 sccm 내지 약 3000 sccm 또는 약 100 sccm 내지 약 1000 sccm일 수 있다.
도 3은 본 개시의 적어도 하나의 구현예에 따른 방법(200)의 흐름도를 나타낸다. 방법(200)은 제3 반응물 이전에 제1 및 제2 반응물 중 하나를 다시 기판으로 도입하는 단계(230)를 포함하는 점을 제외하고, 방법(200)은 방법(100)과 유사하다. 단계(205, 210, 220, 240, 및 250)는 도 2와 연관하여 전술한 단계(105 내지 140)와 동일하거나 유사할 수 있다. 또한, 방법(200)은 방법(200) 중 일부 또는 모두를 반복하기 위한 루프(260, 270)를 포함할 수 있다.
예를 들어, 증착된 재료를 에칭하는 단계(250)로 진행하기 전에, N,N,N',N'-테트라에틸 실란디아민과 같은 실리콘 반응물, 예를 들어 질소 플라즈마를 포함하는 질소 반응물, 및 예를 들어 산소 플라즈마를 포함하는 산소 반응물, 그 다음 질소 플라즈마를 1회 이상 제공할 수 있다. 루프(260) 및/또는 루프(270)는, 예를 들어 약 1 내지 10,000회, 5 내지 2,000회, 또는 10 내지 1,000회 반복될 수 있다. 시퀀스 내에서 단계(230)를 추가함으로써(예, 질소 플라즈마 단계를 두 배로 함으로써), 상부의 반응물이 반응하고 제3의 반응물(예, 산소) 플라즈마가 제공되기 이전에 실질적으로 비활성화되는 것이 더 확실하다.
제3 반응물은, N,N,N',N'-테트라에틸 실란디아민과 같은 실란디아민과 조합하여 높은 성장 결과를 가질 수 있는 산화제, 예를 들어 오존 및/또는 과산화수소를 포함할 수 있다. 오존 및/또는 과산화수소는 비교적 높은 성장을 제공하는 실란디아민과 반응하기 위해서 플라즈마에 의해 활성화될 필요가 없으며, 이는 플라즈마 에너지가 오목부 깊은 곳에서 더 낮을 수 있기 때문에 이점이 있다.
단계(210 내지 250)는 전술한 것들과 동일하거나 유사할 수 있다. 대안적으로, 잠재적 성장 반응물은 유기금속을, 예를 들어 트리메틸알루미늄(TMA)과 같은 유기알루미늄을 포함할 수 있다. 잠재적 성장 반응물이 유기금속을, 예를 들어 트리메틸알루미늄(TMA)과 같은 유기알루미늄을 포함하는 경우, 실질적인 저 성장 반응물은 오존을 포함할 수 있다. 트리메틸알루미늄과 조합하는 오존은, 오목부 상부에서 낮은 성장 결과를 가질 수 있다.
제3 반응물은 과산화수소를 포함할 수 있고, 이는 트리메틸알루미늄과 조합하여 오목부 하부에서 높은 성장을 초래할 수 있고; 히드라진을 포함할 수 있고, 이는 트리메틸알루미늄과 조합하여 오목부 하부에서 높은 성장을 초래할 수 있고; 물을 포함할 수 있고, 이는 트리메틸알루미늄과 조합하여 오목부 하부에서 높은 성장을 초래할 수 있다.
도 4는 예시적인 방법(예, 방법(100) 또는 방법(200))에 따라 형성되고/형성되거나 본원에 기술된 장치를 사용하는 구조체(400)를 나타낸다. 구조체(400)는 기판(402), 그 안에 형성된 오목부(404), 및 증착된 재료(406)를 포함한다. 증착된 재료(406)는 이음매가 없을 수 있어서, 증착된 재료(406)에서 가시적인 공동은 형성되지 않는다.
이제 도 1a 및 도 1b를 참조하면, 반도체 처리 장치(30)를 나타낸다. 반도체 처리 장치(30)는, 오목부를 그 안에 형성한 표면을 포함하는 기판을 수용하기 위한 하나 이상의 반응 챔버(3); 상기 반응 챔버 중 하나와 제1 밸브(31)를 통해 가스 연통하는 제1 반응물용 제1 공급원(21); 상기 반응 챔버 중 하나와 제2 밸브(32)를 통해 가스 연통하는 제2 반응물용 제2 공급원(22); 상기 반응 챔버 중 하나와 제3 밸브(33)를 통해 가스 연통하는 제3 반응물용 제3 공급원(25); 상기 반응 챔버 중 하나와 제4 밸브(34)를 통해 가스 연통하는 에천트 또는 제4 공급원(26); 및 상기 제1, 제2, 제3, 및 제4 가스 밸브와 작동 가능하게 연결된 제어기(27)를 포함하고, 상기 제어기는, 상기 오목부 상에 제1 주입량으로 상기 제1 반응물을 상기 기판에 도입하는 단계; 상기 오목부 상에 제2 주입량으로 제2 반응물을 상기 기판에 도입하되, 상기 제1 및 상기 제2 주입량은 중첩 영역에서 중첩하고, 상기 제1 및 상기 제2 주입 영역이 중첩하지 않는 영역을 남기는 단계; 제3 주입량으로 제3 반응물을 상기 기판에 도입하고 상기 제3 반응물은 상기 제1 및 상기 제2 주입 영역이 중첩하지 않는 영역에서 상기 제1 또는 제2 반응물과 반응함으로써 재료를 증착하는 단계; 및 상기 오목부 내에 상기 증착된 재료를 에칭하는 단계를 제어하도록 구성되고 프로그래밍된다. 나타내지 않았지만, 반도체 처리 장치(30)는 추가적인 (예를 들어, 본원에 기술된 바와 같은 첨가제, 불활성 가스 등을 위한) 공급원 및 추가 구성 요소를 포함할 수 있다.
선택적으로, 반도체 처리 장치(30)는, 기판, 제1, 제2, 및 제3 반응물, 에천트 및/또는 첨가제 중 하나 이상의 온도를 증가시킴으로써, 반응을 활성화하는 히터를 구비한다. ALD 공정을 수행하기 위해 특별히 설계된 예시적인 단일 웨이퍼 반응기는 상표명 Pulsar®, Emerald®, Dragon®, 및 Eagle®인 네덜란드 Almere의 ASM International NV사로부터 상업적으로 이용 가능하다. ALD 공정을 수행하기 위해 특별히 고안된 예시적 배치식 ALD 반응기는 상표명 A400TM 및 A412TM로 ASM International NV사로부터 상업적으로 또한 이용 가능하다.
선택적으로, 반도체 처리 장치(30)는 제1, 제2 또는 제3 반응물 및/또는 에천트 및/또는 첨가제의 플라즈마를 생성하도록 구성되고 배열된 제어기와 작동 가능하게 연결된 RF 공급원을 구비할 수 있다. 플라즈마 강화 원자층 증착(PEALD)은 하나 이상의 반응물을 활성화시키기 위한 플라즈마 공급원을 포함하는 네덜란드 Almere의 ASM International NV사로부터 이용 가능한 Eagle® XP8 PEALD 반응기에서 수행될 수 있다.
플라즈마를 이용한 공정 사이클은, 바람직하게는 본원에 설명되는 시퀀스를 수행하도록 프로그래밍된 제어부와 함께, 본 개시의 적어도 일부 구현예에 사용될 수 있는 반도체 처리 장치(30)를 사용하여 수행될 수 있다. 도 1a에 나타낸 장치에서, 서로 마주하며 평행한 한 쌍의 전기 전도성 평판 전극(4 및 2)을 반응 챔버(3)의 내부(반응 구역)(11)에 제공하고, RF 전력(예, 13.56 MHz 또는 27 MHz)을 전력 공급원(20)으로부터 일측에 인가하고 타측(12)을 전기적으로 접지시킴으로써, 플라즈마가 전극들 사이에서 여기된다.
온도 조절기가 하부 스테이지(하부 전극)(2)에 제공되고, 그 위에 놓인 기판(1)의 온도는 비교적 일정한 온도로 유지될 수 있다. 상부 전극(4)은 샤워 플레이트로서의 역할도 수행하며, 반응물 가스 (및 선택적으로 귀가스), 전구체 가스, 및 에천트 가스는 가스 라인(41 내지 44) 각각을 통해, 그리고 샤워 플레이트(4)를 통해서 반응 챔버(3)로 도입된다.
추가적으로, 반응 챔버(3)에는 배기 라인(7)을 갖는 원형 덕트(13)가 제공되고, 이를 통해 반응 챔버(3)의 내부(11)에 있는 가스가 배기된다. 추가적으로, 예를 들어 반응 챔버(3) 아래에 배치된 이송 챔버(5)는, 이송 챔버(5)의 내부(이송 구역)(16)를 통해 반응 챔버(3)의 내부(11)로 밀봉 가스를 유입하기 위한 밀봉 가스 라인(24)을 구비하며, 반응 구역과 이송 구역을 분리하기 위한 분리 판(14)이 제공된다(기판이 이송 챔버(5)로 또는 이송 챔버로부터 이송되는 게이트 밸브는 본 도면에서 생략됨). 이송 챔버는 또한 배기 라인(6)을 구비한다. 일부 구현예에서, 다중 원소 막의 증착 및 표면 처리는 동일한 반응 공간에서 수행되어, 모든 단계들은 기판을 공기 또는 다른 산소 함유 대기에 노출시키지 않고 연속적으로 수행될 수 있다. 일부 구현예에서, 원격식 플라즈마 유닛은, 예를 들어, 공급원(21, 22, 25, 및/또는 26) 중 하나 이상으로부터 가스를 여기시키기 위해 사용될 수 있다.
일부 구현예에서, 도 1a에 도시된 장치에, 불활성 가스의 흐름 및 전구체 또는 반응물 가스의 흐름을 스위칭하는 시스템이 도 1b에 나타나 있다; 이 시스템은 반응 챔버의 압력을 실질적으로 요동시키지 않고 전구체 또는 반응물 가스를 펄스로 유입하기 위해 사용될 수 있다. 도 1b는 본 발명의 구현예에 따른 유동 통과 시스템(FPS)을 사용하는 전구체 공급 시스템을 나타낸다(검은색 밸브는 밸브가 닫혔음을 표시함). 도 1b의 (a)에 나타난 바와 같이, 전구체를 반응 챔버(미도시)에 공급할 때, 우선, Ar(또는 He)과 같은 캐리어 가스가 밸브(b 및 c)를 갖는 가스 라인을 통해 흐른 다음 용기(리저버)(20)로 진입한다. 캐리어 가스는 용기(20) 내부의 증기압에 대응하는 양으로 전구체 가스를 운반하면서 용기(20)로부터 흘러 나오고, 밸브(f 및 e)를 갖는 가스 라인을 통해 흐른 다음 전구체와 함께 반응 챔버에 공급된다. 이 경우, 밸브(a 및 d)는 폐쇄된다. 캐리어 가스(예, 귀가스)만을 반응 챔버에 공급할 경우, 도 1b의 (b)에 나타낸 바와 같이, 캐리어 가스는 용기(20)를 우회하면서 밸브를 갖는 가스 라인을 통해 흐른다. 이 경우, 밸브(b, c, d, e, 및 f)는 폐쇄된다.
전구체는 캐리어 가스의 도움으로 제공될 수 있다. 자기 제한 흡착 반응 공정인 ALD의 경우, 증착된 전구체 분자의 개수는 반응성 표면 부위의 개수에 의해 결정될 수 있고 포화 후 전구체의 노출과는 무관하고, 전구체의 공급은 사이클마다 반응성 표면 부위가 포화되도록 한다. 증착용 플라즈마는 인시츄, 예를 들어 증착 사이클 전체에 걸쳐 연속적으로 흐르는 가스에서 생성될 수 있다. 다른 구현예에서, 플라즈마는 원격식으로 생성되어 반응 챔버에 제공될 수 있다.
일부 구현예에서, 듀얼 챔버 반응기(서로 근접하게 배치된 기판을 공정 처리하기 위한 두 개의 섹션 또는 컴파트먼트)가 이용될 수 있고, 반응물 가스 및 귀가스는 공유된 라인을 통해 공급될 수 있는 반면에 전구체 가스는 공유되지 않는 라인을 통해 공급된다.
장치는, 본원에 설명된 증착 공정을 수행하도록 달리 구성되거나 프로그래밍된 제어기(27)와 같은 하나 이상의 제어기(들)를 포함할 수 있음을 당업자는 이해할 것이다. 제어기(들)는 다양한 전력원, 가열 시스템, 펌프, 로보틱스, 및 반응기의 가스 유량 제어기 또는 밸브와 통신할 수 있다.
본원에 기술된 구성 및/또는 접근법은 본질적으로 예시적인 것이며, 다양한 변형이 가능하기 때문에, 이들 특정 구현예 또는 실시예가 제한적인 의미로 고려되어서는 안 된다는 것을 이해해야 한다. 본원에 설명된 특정 루틴 또는 방법은 임의의 처리 전략 중 하나 이상을 나타낼 수 있다. 따라서, 예시된 다양한 동작은 예시된 시퀀스에서 수행되거나, 상이한 시퀀스에서 수행되거나, 경우에 따라 생략될 수 있다.
본 개시의 요지는 본원에 개시된 다양한 공정, 시스템, 및 구성, 다른 특징, 기능, 행위 및/또는 성질의 모든 신규하고 비자명한 조합 및 하위 조합뿐만 아니라 임의의 그리고 모든 균등물을 포함한다.

Claims (20)

  1. 오목부가 형성된 표면을 포함하는 기판을 수용하기 위한 하나 이상의 반응 챔버들;
    상기 반응 챔버들 중 하나와 제1 밸브를 통해 가스 연통하는 제1 반응물용 제1 공급원;
    상기 반응 챔버들 중 하나와 제2 밸브를 통해 가스 연통하는 제2 반응물용 제2 공급원;
    상기 반응 챔버들 중 하나와 제3 밸브를 통해 가스 연통하는 제3 반응물용 제3 공급원;
    상기 반응 챔버들 중 하나와 제4 밸브를 통해 가스 연통하는 에천트 공급원; 및
    상기 제1, 제2, 제3, 및 제4 밸브와 작동 가능하게 연결된 제어기를 포함하고,
    상기 제어기는,
    상기 오목부 상에 제1 반응물을 제1 주입량으로 상기 기판에 도입하는 단계;
    상기 오목부 상에 제2 반응물을 제2 주입량으로 상기 기판에 도입하되, 상기 제1 주입량과 상기 제2 주입량은 중첩 영역에서 중첩하고, 상기 제1 주입량과 상기 제2 주입량이 중첩하지 않는 영역을 남기는 단계;
    상기 제1 주입량과 상기 제2 주입량이 중첩하지 않는 상기 영역에서 상기 제1 반응물 또는 상기 제2 반응물과 반응하는 제3 반응물을 제3 주입량으로 상기 기판에 도입함으로써 재료를 증착하는 단계; 및
    상기 오목부 내에 상기 증착된 재료를 건식 에칭하는 단계를 제어하도록 구성되고 프로그래밍 되며,
    상기 재료의 에칭 속도는 상기 제1 주입량과 상기 제2 주입량이 중첩하지 않는 상기 영역에 비해 상기 중첩 영역에서 더 높고,
    상기 제1 반응물을 도입하는 단계, 상기 제2 반응물을 도입하는 단계, 상기 제3 반응물을 도입하는 단계, 및 상기 재료를 건식 에칭하는 단계는 반복되는, 반도체 처리 장치.
  2. 제1항에 있어서,
    상기 에천트는 CxFy, CHF3, NF3, SF6, Cl2, BCl3, HBr, 및 HI 중 하나 이상을 포함하는 반도체 처리 장치.
  3. 제1항에 있어서,
    상기 에천트 공급원과 상기 하나 이상의 반응 챔버들 사이에 원격식 플라즈마를 더 포함하는 반도체 처리 장치.
  4. 제1항에 있어서,
    상기 제2 반응물은 실란 아민, 실록산 아민, 및 실라잔 아민으로 이루어진 군으로부터 선택되는 반도체 처리 장치.
  5. 제1항에 있어서,
    상기 제1 반응물은 He, Ne, Ar, Kr, Xe, N2, NH3 및 N2H4으로 이루어진 군으로부터 선택되는 반도체 처리 장치.
  6. 제1항에 있어서,
    상기 제1 반응물은 질소를 포함하는 반도체 처리 장치.
  7. 제6항에 있어서,
    상기 제2 반응물은 실리콘을 포함하는 반도체 처리 장치.
  8. 제7항에 있어서,
    상기 제3 반응물은 물, 과산화수소, 산소 분자 및 오존으로 이루어진 군으로부터 선택되는 반도체 처리 장치.
  9. 제1항에 있어서,
    상기 제1 주입량과 상기 제2 주입량이 중첩하지 않는 상기 영역은 상기 제1 및 제2 반응물 중 하나의 제1 농도가 상기 제1 및 제2 반응물 중 다른 하나의 제2 농도보다 현저히 낮은 영역인 반도체 처리 장치.
  10. 삭제
  11. 삭제
  12. 삭제
  13. 삭제
  14. 삭제
  15. 삭제
  16. 삭제
  17. 삭제
  18. 삭제
  19. 삭제
  20. 삭제
KR1020200018273A 2019-02-20 2020-02-14 기판 표면 내에 형성된 오목부를 충진하기 위한 방법 및 장치 KR102638425B1 (ko)

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