TW202146831A - 垂直批式熔爐總成、及用於冷卻垂直批式熔爐之方法 - Google Patents

垂直批式熔爐總成、及用於冷卻垂直批式熔爐之方法 Download PDF

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TW202146831A
TW202146831A TW110114057A TW110114057A TW202146831A TW 202146831 A TW202146831 A TW 202146831A TW 110114057 A TW110114057 A TW 110114057A TW 110114057 A TW110114057 A TW 110114057A TW 202146831 A TW202146831 A TW 202146831A
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cooling gas
cooling
batch furnace
vertical batch
circumferential wall
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梅爾文 韋爾巴斯
瑞達 克里斯提納斯 G M 迪
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荷蘭商Asm Ip私人控股有限公司
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    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27FURNACES; KILNS; OVENS; RETORTS
    • F27DDETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D3/00Charging; Discharging; Manipulation of charge
    • F27D3/0084Charging; Manipulation of SC or SC wafers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • H01L21/67109Apparatus for thermal treatment mainly by convection
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27FURNACES; KILNS; OVENS; RETORTS
    • F27BFURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B9/00Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity
    • F27B9/12Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity with special arrangements for preheating or cooling the charge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67757Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a batch of workpieces
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27FURNACES; KILNS; OVENS; RETORTS
    • F27BFURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B9/00Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity
    • F27B9/12Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity with special arrangements for preheating or cooling the charge
    • F27B2009/124Cooling
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27FURNACES; KILNS; OVENS; RETORTS
    • F27BFURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B14/00Crucible or pot furnaces
    • F27B14/08Details peculiar to crucible or pot furnaces
    • F27B2014/0837Cooling arrangements
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27FURNACES; KILNS; OVENS; RETORTS
    • F27DDETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D3/00Charging; Discharging; Manipulation of charge
    • F27D3/16Introducing a fluid jet or current into the charge
    • F27D2003/166Introducing a fluid jet or current into the charge the fluid being a treatment gas
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27FURNACES; KILNS; OVENS; RETORTS
    • F27DDETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D9/00Cooling of furnaces or of charges therein
    • F27D2009/007Cooling of charges therein
    • F27D2009/0072Cooling of charges therein the cooling medium being a gas
    • F27D2009/0075Cooling of charges therein the cooling medium being a gas in direct contact with the charge

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Abstract

一種垂直批式熔爐總成,包含一核心管、一外殼、由外殼及核心管定界及圍封之一冷卻室、及在冷卻室中發出之至少一冷卻氣體供應。核心管具有在一縱向方向上延伸之一細長圓周壁,且配置以容納用於在垂直批式熔爐中處理之晶圓。外殼圍繞核心管延伸並包含一加熱元件,加熱元件用於施加一熱處理至容納於核心管中之晶圓。至少一冷卻氣體供應包含至少一冷卻氣體供應開口,經配置使得冷卻氣體以實質上正切圓周壁的一流動方向進入冷卻室。

Description

包含冷卻氣體供應之垂直批式熔爐總成
本揭露大致上係關於包含冷卻氣體供應之垂直批式熔爐總成。
大多數垂直批式熔爐具備核心管(core tube),其配置以容納欲在垂直批式熔爐中處理的晶圓。在垂直批式熔爐中進行處理期間,晶圓及核心管可變熱。為了加速垂直批式熔爐總成之流通量(throughput),可冷卻核心管。可在核心管之圓周壁與外殼之間從冷卻室之側邊處的一些周向隔開開口(circumferentially spaced openings)供應冷卻氣體。
提供本揭露內容以簡化形式來介紹一系列概念。這些概念在下文之本揭露的實例實施例之實施方式中係進一步地詳述。本揭露內容並不意欲鑑別所主張之標的之關鍵特徵或基本特徵,亦不意欲用以限制所主張之標的之範疇。
可瞭解,周向隔開開口可在核心管之圓周壁上局部地產生冷點(cold spots)。此類冷點可導致圓周壁內之溫度差,其可導致圓周壁中之應力。此外,核心管內之晶圓亦可能暴露至溫度差,其可導致晶圓斷裂(breaking)。
因此,提供可在其中減輕上述問題的一種垂直批式熔爐總成可以是一目標。
為此目標,可提供如申請專利範圍請求項1之垂直批式熔爐總成。更具體地,可提供一種垂直批式熔爐總成,其包含一核心管、一外殼、由外殼及核心管定界及圍封(enclosed)之一冷卻室、及在冷卻室中發出之至少一冷卻氣體供應。核心管可具有一細長圓周壁,其在一縱向方向上延伸,且核心管可配置以容納用於在垂直批式熔爐中處理的晶圓。外殼可圍繞核心管延伸,並可包含一加熱元件,加熱元件用於施加一熱處理至容納於核心管中的晶圓。冷卻氣體供應可包含至少一冷卻氣體供應開口,其經配置使得冷卻氣體以實質上正切(tangent)圓周壁的一流動方向進入冷卻室。
亦可提供如申請專利範圍請求項16之用於冷卻一垂直批式熔爐之方法。更具體地,可提供一種方法,其包含根據本說明書提供一垂直批式熔爐10,及在冷卻室20中以實質上正切圓周壁的一流動方向供應一冷卻氣體。實質上正切的流動方向可包括一角度,其中細長圓周壁14的縱向方向在90˚ ± 15˚的範圍內;並可包括在0˚ ± 10˚之範圍內的一角度,其中通過圓周壁之一點的一平面最靠近各別冷卻氣體供應開口,且正切圓周壁。
出於概述本揭露及所達成之優於先前技術之優點的目的,已在上文中描述本揭露之某些目標及優點。當然,應理解,可無須根據本揭露之任何特定實施例來達成所有此類目標或優點。因此,例如,所屬技術領域中具有通常知識者應理解,本揭露可按照本文所教示或建議之達成或最佳化一個優點或一些優點的方式實施或執行,而無須達成本文可教示或建議之其他目標或優點。
在附屬申請專利範圍中主張各種實施例,其等將參照圖式中所示之一實例進一步闡明。實施例可組合或可彼此分開應用。
這些實施例之全部係意欲屬於本文所揭示之本揭露的範疇。所屬技術領域中具有通常知識者將從下文參照附圖詳細描述的某些實施例輕易地明白這些及其他實施例,本揭露並未受限於所揭示的任何特定實施例。
在本申請案中,類似或對應的特徵係由類似或對應的元件符號表示。各種實施例的描述並未受限於圖式中所示的實例及實施方式中所用的元件符號,且申請專利範圍並非意欲限制實施例之描述,而是包括以闡明實施例。
雖然在下文揭示某些實施例及實例,所屬技術領域中具有通常知識者將了解,本揭露延伸超出本揭露及其明顯的修改、與均等物之具體揭示的實施例及/或用途。因此,意欲使所揭示之本揭露的範疇不應受下文所述之具體揭示實施例的限制。本文呈現的圖式並非意指任何特定材料、結構、或裝置的實際視圖,而僅係用以描述本揭露之實施例的理想化表示。
如本文中所使用,用語「晶圓(wafer)」可指可使用或在其上可形成裝置、電路、或膜之任何下伏(underlying)材料。
用最一般的用語來說,本揭露可提供垂直批式熔爐總成10。垂直批式熔爐總成10可包含核心管12;外殼16;冷卻室20,其藉由外殼16在徑向外側上、及藉由核心管12在徑向內側上定界;及至少一冷卻氣體供應,其在冷卻室20中發出(emanating)。核心管12可具有細長圓周壁14,其在縱向方向L上延伸,且核心管12可配置以容納用於在垂直批式熔爐總成10中處理的晶圓。外殼16可圍繞核心管12,並可包含加熱元件18,加熱元件18用於施加熱處理至容納於核心管12中的晶圓。冷卻氣體供應可包含至少一冷卻氣體供應開口26,其配置使得冷卻氣體以實質上正切圓周壁14的流動方向進入冷卻室20。實質上正切的流動方向可包括一角度,其中細長圓周壁14的縱向L方向在90˚ ± 15˚的範圍內。實質上正切的流動方向可包括在0˚ ± 10˚之範圍內的角度,其中通過圓周壁14之一點的平面最靠近各別冷卻氣體供應開口26,且正切圓周壁14。
在氣體離開氣體供應開口26的流動方向是至少初始正切於圓周壁14的情況下,冷卻氣體將不會立即沿著細長圓周壁14的縱向方向流動,取而代之地,將在圓周壁14的正切方向上擴散(spread out)。僅在冷卻氣體已於圓周壁14的正切方向上擴散之後,冷卻氣體將沿著細長圓周壁14的縱向方向L流動,如第1圖之箭頭F所指示者。藉由首先正切地散布(distributing)冷卻氣體,使圓周壁14更均勻地冷卻。以此方式,沒有形成冷點,並防止與這些所謂的冷點相關聯的缺點。
在其一實例經顯示於第3圖之分解圖中的一實施例中,各冷卻氣體供應可包含冷卻氣體入口管22,其端部24延伸至冷卻室20中。亦顯示於第4圖中之端部24可具備至少一冷卻氣體供應開口26。各冷卻氣體入口管22可以製成為一件。各冷卻氣體入口管22可以陶瓷材料製成。可關閉延伸至冷卻室20中之冷卻氣體入口管22的軸向端28。
在第4圖所示的實例中,冷卻氣體入口管22延伸至冷卻室20中。冷卻氣體入口管22可延伸通過外殼16中的開口44。藉由使冷卻氣體入口管22的軸向端28關閉,可防止冷卻氣體進入平行於細長圓周壁14之縱向方向的冷卻室20。所示的冷卻氣體入口管22之端部具備兩個冷卻氣體供應開口26。各供應開口係經定向,使得經由開口進入冷卻室20的冷卻氣體相對於圓周壁14正切地進入冷卻室20。冷卻氣體入口管22可具備凸輪46,其經配置以與外殼16中的對應凹部48協作,凹部48係開口44的部分,冷卻氣體入口管22延伸通過凹部。冷卻氣體入口管22上的凸輪46與外殼16中的凹部48之組合相對於外殼16,從而亦相對於垂直批式熔爐總成10及核心管12,而固定冷卻氣體入口管22的定向。此可確保冷卻氣體供應開口26將具有相對於核心管12之正確定向,使得具有實質上正切圓周壁14之流動方向的冷卻氣體將進入冷卻室20。
在處理核心管12中的晶圓期間,可加熱冷卻氣體入口管22。當冷卻開始時,所供應的冷卻氣體可導致冷卻氣體入口管22的溫度大幅下降。此溫度下降可導致冷卻氣體入口管22中的内部應力。藉由將冷卻氣體入口管22體現為一個整體部件,使冷卻氣體入口管22中沒有脆弱的接合點,其可導致由此内部應力所導致之冷卻氣體入口管22的斷裂。較佳地,各冷卻氣體入口管22係以陶瓷材料製成。陶瓷材料能夠耐受高溫及大幅溫度波動兩者。此使陶瓷材料非常適於冷卻氣體入口管22。
在其一實例經顯示於第2圖的一實施例中,至少一冷卻氣體供應22包含複數個冷卻氣體供應,其等圍繞核心管12均等地間隔。藉由圍繞核心管12均等地間隔冷卻氣體供應,可沿著細長圓周壁14得到冷卻氣體的均勻流入。
在其一實例顯示於第1圖中的一實施例中,垂直批式熔爐總成10可進一步包含至少一冷卻氣體排放30,其包含至少一排放開口31,以從冷卻室20排放冷卻氣體。在操作中,所發出的冷卻氣體可沿著核心管12的細長圓周壁14從至少一冷卻氣體供應流動到至少一冷卻氣體排放30。
至少一冷卻氣體排放30可包含複數個冷卻氣體排放30,其圍繞核心管12均等地間隔。藉由圍繞核心管12均等地間隔冷卻氣體排放30,沿著細長圓周壁14得到冷卻氣體的均勻流出。
如第1圖所示,至少一冷卻氣體供應可配置在冷卻室的第一縱向端32之處或附近,且至少一冷卻氣體排放30可配置在冷卻室34的第二縱向端之處或附近。以此方式,冷卻氣體將沿著細長圓周壁14平行於縱向方向流動,如箭頭F所指示者。
垂直批式熔爐總成10可進一步包含冷卻氣體再循環通道36,其從至少一冷卻氣體排放30延伸到至少一冷卻氣體供應22。冷卻氣體再循環通道36可包含增壓裝置38(諸如風扇或鼓風機(blower))及熱交換器40,熱交換器配置以冷卻再循環通道36中的冷卻氣體。藉由再循環冷卻氣體而再利用冷卻氣體,其意指無須供應新的冷卻氣體。當冷卻氣體非周圍空氣而是例如必須購買且其供應可能會耗盡的高濃度氮氣時,此係特別有利的。此外,藉由不持續引入新的冷卻氣體至冷卻室20中,碎屑或污染亦不會進入冷卻室20。同樣地,源自冷卻室或垂直批式熔爐總成10之其他部件的有害污染不會隨著冷卻氣體一起排出至周圍環境。
較佳地,增壓裝置38可配置在熱交換器40的下游。可以是所想要的是使冷卻氣體供應開口26處的壓力處於特定位準。與增壓裝置38在其中經配置在熱交換器40的上游之配置相反,藉由使增壓裝置38配置在熱交換器40的下游,增壓裝置38只需要較少功率來達成冷卻氣體供應開口26處的特定壓力。
至少一冷卻氣體排放30的配置可類似於至少一冷卻氣體供應的配置,其中冷卻室20內之冷卻氣體的流動方向係可逆的。至少一冷卻氣體排放開口可配置,使得當冷卻室20內之冷卻氣體的流動方向經反向,且冷卻氣體排放開口充當冷卻氣體供應開口26時,冷卻氣體以實質上正切圓周壁14的流動方向進入冷卻室20。
冷卻氣體可藉由從核心管12吸收熱來冷卻核心管12。在一個方向上流動時,冷卻氣體在進入冷卻室20時最冷,而在經由冷卻氣體排放30退出時最暖熱。此意指相較於圓周壁14較靠近冷卻氣體供應管22的部分,圓周壁14最靠近冷卻氣體排放30的部分由冷卻氣體冷卻的程度將係較少的。為了增加細長圓周壁14的總體冷卻速度,可以是有利的是使冷卻氣體亦從冷卻氣體排放30朝冷卻氣體供應流動。冷卻氣體之後可沿著圓周壁14持續特定時間從冷卻氣體供應流動至冷卻氣體排放30,因而主要冷卻圓周壁14最接近冷卻氣體供應的部分。在特定時間之後,流動方向可反向,且冷卻氣體可沿著圓周壁14持續特定時間從冷卻氣體排放30流動至冷卻氣體供應22,因而主要冷卻圓周壁14最接近冷卻氣體排放30的部分。以此方式,提升冷卻氣體流的總體冷卻效率。
在第1圖所示之實例中,此流動反向可起效,因為增壓裝置38之入口可連接至再循環通道36之兩個抽吸部件36b。每個抽吸部件36b可包括排放閥52a、52b。增壓裝置38的出口可連接至再循環通道36的壓力部件36a。冷卻氣體再循環通道36之供應部件36a係分成兩個部件,且各部件可包含轉向器閥42a、42b。在使用時,僅抽吸部件36b中之一者可運轉輸送冷卻氣體,而另一者可藉由相關聯的排放閥52a或52b來關閉。藉由巧妙地切換轉向器閥(diverter valve)42a、42b及排放閥(discharge valve)52a、52b,可將冷卻氣體引導到至少一冷卻氣體供應22,且隨後經由冷卻室20到至少一冷卻氣體排放30、或替代地引導到至少一冷卻氣體排放30,且隨後經由冷卻室20到至少一冷卻氣體供應22。
除了功能上相同以外,冷卻氣體排放30在結構上亦可相同於冷卻氣體供應22。此有利於建構散熱氣排放30及冷卻氣體供應22,因為僅需要製造一種類型的部件。
本揭露亦可提供一種用於冷卻一垂直批式熔爐之方法。此方法可包含根據本說明書提供垂直批式熔爐10,及以實質上正切圓周壁14的流動方向在冷卻室20中供應冷卻氣體。
在一實施例中,實質上正切的流動方向包括一角度,其中細長圓周壁14的縱向方向L在90˚ ± 15˚的範圍內。
在一實施例中,實質上正切的流動方向包括在0˚ ± 10˚之範圍內的角度,其中通過圓周壁之一點的平面最靠近各別冷卻氣體供應開口26且正切圓周壁14。
在初始流動正切圓周壁14的情況下,冷卻氣體將不會立即沿著細長圓周壁14的縱向方向L流動,取而代之地,將在圓周壁14的正切方向上散布。僅在冷卻氣體已於圓周壁14的正切方向上散布之後,冷卻氣體將沿著細長圓周壁14在縱向方向L上流動。以此方式,沒有冷點形成,並防止與這些所謂的冷點相關聯的缺點。
雖然上文已部分參照伴隨圖式描述本揭露之說明性實施例,應瞭解本揭露並未受限於這些實施例。在所屬技術領域中具有通常知識者於實踐所主張發明的過程中可由研讀圖式、本揭露、及附屬申請專利範圍而瞭解並實行所揭示之實施例的變體。
在本說明書全文中提及「一個實施例(one embodiment)」或「一實施例(an embodiment)」意指連同此實施例所述之特定特徵、結構、或特性係包括在本揭露的至少一實施例中。因此,詞組「在一個實施例中(in one embodiment)」或「在一實施例中(in an embodiment)」在本描述全文的各處出現非必然全部提及相同實施例。
此外,須注意上述之各種實施例之一或多者的特定特徵、結構、或特性可用以彼此獨立地實施,並可以任何合適的方式結合,以形成新的非經明確描述的實施例。詳細的實施方式及申請專利範圍中所用的元件符號並非限制實施例的描述亦非限制申請專利範圍。元件符號僅用以釐清。
10:垂直批式熔爐總成 12:核心管 14:圓周壁 16:外殼 18:加熱元件 20:冷卻室 22:冷卻氣體入口管 24:(冷卻氣體入口管之)端部 26:冷卻氣體供應開口 28:(冷卻氣體入口管之)軸向端 30:冷卻氣體排放 31:排放開口 32:(冷卻室之)第一縱向端 34:(冷卻室之)第二縱向端 36:冷卻氣體再循環通道 36a:壓力部件, 供應部件 36b:抽吸部件 38:增壓裝置 40:熱交換器 42a:轉向器閥 42b:轉向器閥 44:(外殼中之)開口 46:凸輪 48:凹部 52a:排放閥 52b:排放閥 F:箭頭 L:縱向方向
雖然本說明書以特別指出且明確主張被視為本揭露實施例之權利的申請專利範圍作為結論,但是當結合伴隨圖式閱讀時,可從本揭露的實施例之某些實例的描述更容易地探知本揭露之實施例的優點,其中: 第1圖顯示根據本說明書之垂直批式熔爐總成的一實例; 第2圖顯示第1圖之實例的外殼之頂部部分的倒置圖(upside-down view); 第3圖示意地顯示第2圖之細節的分解立體圖;及 第4圖示意地顯示根據本說明書之冷卻氣體入口管的端部之一實例的剖視圖。
10:垂直批式熔爐總成
12:核心管
14:圓周壁
16:外殼
18:加熱元件
20:冷卻室
22:冷卻氣體入口管
26:冷卻氣體供應開口
30:冷卻氣體排放
31:排放開口
32:(冷卻室之)第一縱向端
34:(冷卻室之)第二縱向端
36:冷卻氣體再循環通道
36a:壓力部件,供應部件
36b:抽吸部件
38:增壓裝置
40:熱交換器
42a:轉向器閥
42b:轉向器閥
52a:排放閥
52b:排放閥
F:箭頭
L:縱向方向

Claims (18)

  1. 一種垂直批式熔爐總成(10),包括: 一核心管(12),具有在一縱向方向上延伸之一細長圓周壁(14),其中該核心管(12)係配置以容納用於在該垂直批式熔爐總成(10)中處理之晶圓; 一外殼(16),圍繞該核心管(12)延伸,並包括一加熱元件(18),該加熱元件用於施加一熱處理至容納於該核心管(12)中之晶圓; 一冷卻室(20),藉由該外殼(16)在一徑向外側上及藉由該核心管(12)在一徑向內側上定界;以及 至少一冷卻氣體供應,在該冷卻室(20)中發出,其中該冷卻氣體供應包括至少一冷卻氣體供應開口(26),配置使得該冷卻氣體以實質上正切該圓周壁(14)的一流動方向進入該冷卻室(20)。
  2. 如請求項1之垂直批式熔爐,其中實質上正切的該流動方向包括一角度,其中該細長圓周壁(14)的該縱向方向在90˚ ± 15˚的範圍內。
  3. 如請求項1或2之垂直批式熔爐,其中實質上正切的該流動方向包括在0˚ ± 10˚之範圍內的一角度,其中通過該圓周壁之一點的一平面最靠近各別該冷卻氣體供應開口(26),且正切該圓周壁。
  4. 如請求項1至3中任一項之垂直批式熔爐總成,其中各該冷卻氣體供應包括一冷卻氣體入口管(22),該冷卻氣體入口管之一端部(24)延伸至該冷卻室(20)中,其中該端部(24)具備該至少一冷卻氣體供應開口(26)。
  5. 如請求項4之垂直批式熔爐總成,其中各該冷卻氣體入口管(22)係體現為一個整體部件。
  6. 如請求項4或5之垂直批式熔爐總成,其中各該冷卻氣體入口管(22)係以一陶瓷材料製成。
  7. 如請求項4至6中任一項之垂直批式熔爐總成,其中延伸至該冷卻室(20)中之該冷卻氣體入口管(22)之一軸向端(28)係關閉。
  8. 如請求項1至7中任一項之垂直批式熔爐總成,其中該至少一冷卻氣體供應包括複數個冷卻氣體供應,該等冷卻氣體供應圍繞該核心管(12)均等地間隔。
  9. 如請求項1至7中任一項之垂直批式熔爐總成,更包括至少一冷卻氣體排放(30),該至少一冷卻氣體排放(30)包括至少一排放開口,以從該冷卻室(20)排放該冷卻氣體,其中在操作中,該發出的冷卻氣體從該至少一冷卻氣體供應(22)沿著該核心管(12)之該細長圓周壁(14)流動至該至少一冷卻氣體排放(30)。
  10. 如請求項9之垂直批式熔爐總成,其中該至少一冷卻氣體排放(30)包括複數個冷卻氣體排放(30),該等冷卻氣體排放圍繞該核心管(12)均等地間隔。
  11. 如請求項9至10中任一項之垂直批式熔爐總成,其中該至少一冷卻氣體供應(22)係配置在該冷卻室之一第一縱向端(32)之處或附近,且該至少一冷卻氣體排放(30)係配置在該冷卻室(34)之一第二縱向端之處或附近。
  12. 如請求項9至11中任一項之垂直批式熔爐總成,更包括一冷卻氣體再循環通道(36、36a、36b),該冷卻氣體再循環通道從該至少一冷卻氣體排放(30)延伸至該至少一冷卻氣體供應(22),該冷卻氣體再循環通道(36a、36b)包括: 一增壓裝置(38),諸如一風扇或鼓風機;以及 一熱交換器(40),配置以冷卻該再循環通道(36a、36b)中之該冷卻氣體。
  13. 如請求項12之垂直批式熔爐總成,其中該增壓裝置(38)係配置在該熱交換器(40)的下游。
  14. 如請求項9至13中任一項之垂直批式熔爐總成, 其中該至少一冷卻氣體排放(30)的配置係類似於該至少一冷卻氣體供應的配置,其中該冷卻室(20)內之該冷卻氣體的該流動方向可反向,其中該至少一冷卻氣體排放開口係配置使得當該冷卻室(20)內之該冷卻氣體的該流動方向經反向,且該冷卻氣體排放開口充當一冷卻氣體供應開口(26)時,該冷卻氣體以實質上正切該圓周壁(14)的一流動方向進入該冷卻室(20)。
  15. 如請求項14之垂直批式熔爐總成,當附屬於至少申請專利範圍第12項時,其中該冷卻氣體再循環通道(36)包括複數個轉向器閥(42a、42b)及/或複數個排放閥(52a、52b),以將該冷卻氣體引導到該至少一冷卻氣體供應(22),且隨後經由該冷卻室(20)到該至少一冷卻氣體排放(30)、或替代地引導到該至少一冷卻氣體排放(30),且隨後經由該冷卻室(20)到該至少一冷卻氣體供應(22)。
  16. 一種用於冷卻一垂直批式熔爐之方法,包括: 提供如請求項1至15中任一項之垂直批式熔爐(10);以及 以實質上正切該圓周壁的一流動方向在該冷卻室(20)中供應一冷卻氣體。
  17. 如請求項16之方法,其中該實質上正切的流動方向包括一角度,其中該細長圓周壁(14)的該縱向方向在90˚ ± 15˚的範圍內。
  18. 如請求項16或17之方法,其中實質上正切的該流動方向包括在0˚ ± 10˚之範圍內的一角度,其中通過該圓周壁之一點的一平面最靠近各別該冷卻氣體供應開口(26),且正切該圓周壁(14)。
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