JPH0964149A - 半導体製造装置 - Google Patents

半導体製造装置

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Publication number
JPH0964149A
JPH0964149A JP24234595A JP24234595A JPH0964149A JP H0964149 A JPH0964149 A JP H0964149A JP 24234595 A JP24234595 A JP 24234595A JP 24234595 A JP24234595 A JP 24234595A JP H0964149 A JPH0964149 A JP H0964149A
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JP
Japan
Prior art keywords
chamber
module
main
work
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP24234595A
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English (en)
Inventor
Naohisa Asaka
香 尚 久 浅
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Corp
Original Assignee
Hitachi Electronics Engineering Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Electronics Engineering Co Ltd filed Critical Hitachi Electronics Engineering Co Ltd
Priority to JP24234595A priority Critical patent/JPH0964149A/ja
Publication of JPH0964149A publication Critical patent/JPH0964149A/ja
Pending legal-status Critical Current

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Abstract

(57)【要約】 (修正有) 【課題】 半導体製造装置、特にワークに所定の処理を
実行する処理ステージを複数個備えたマルチチャンバ方
式のものにおいて、製品の製造に寄与する稼働率を向上
する。 【解決手段】 ローダ部1及びアンローダ部2と搬送系
3とメインコントローラ8とで複数個の処理ステージ7
に共通なメインモジュール13を形成すると共に、上記
複数個の処理ステージ7の1個1個の内部に電源装置1
5を設け且つ上記メインモジュール13のメインコント
ローラ8からの指令を受けて個々の処理ステージ7内の
動作を制御するローカルコントローラ16を設けて1個
1個独立に動作するチャンバモジュール17を形成し、
さらに上記メインモジュール13に対する個々のチャン
バモジュール17の接続部は切り離し可能の構造とし且
つ上記チャンバモジュール17の着脱を案内するための
ガイド機構19,20を設けたものである。

Description

【発明の詳細な説明】
【0001】
【発明の属する技術分野】本発明は、IC(集積回路)
などの半導体製品を製造するのに用いるプラズマCVD
(化学的気相成長)装置、低圧CVD装置、プラズマエ
ッチング装置、スパッタリング装置などの半導体製造装
置に関し、特にワークに所定の処理を実行する処理ステ
ージを複数個備えたマルチチャンバ方式のものにおいて
製品の製造に寄与する稼働率を向上することができる半
導体製造装置に関する。
【0002】
【従来の技術】従来のこの種の半導体製造装置は、図3
に示すように、半導体製造のワーク(例えばウェハ)を
順次処理ステージへ送り出すローダ部1及び上記処理ス
テージでの所定の処理終了後のワークを受領して積層す
るアンローダ部2と、このローダ部1及びアンローダ部
2と上記処理ステージとの間でワークを移送する搬送系
3と、上記ワークに対し所定の処理を実行する反応室4
及び主ポンプ5並びにガスユニット6を有する複数個の
処理ステージ7と、上記各構成要素の動作を制御するメ
インコントローラ8とを備えて成っていた。そして、図
4はこのような半導体製造装置の全体の配置例を示す平
面図である。複数個の処理ステージ71〜74は、上記搬
送系3を中心として適宜の円弧上に例えば放射状に配置
されており、マルチチャンバ方式に構成されている。
【0003】なお、図3において、符号9は上記ローダ
部1又はアンローダ部2と搬送系3との間でワークを受
け渡しする二つのロードロックを示し、符号10は上記
搬送系3と各処理ステージ7の反応室4との間でワーク
を受け渡しする際にその通路を開閉する仕切弁を示し、
符号11は図示外の高周波電源からの電力を入力して反
応室4へ供給するために調整する高周波マッチャを示
し、符号12は上記メインコントローラ8から上記処理
ステージ7内の各構成要素へ制御信号を送受する制御ケ
ーブルを示している。また、図4において、符号3′は
上記ローダ部1又はアンローダ部2と二つのロードロッ
ク9,9との間でワークを受け渡しする補助搬送系を示
している。
【0004】
【発明が解決しようとする課題】しかし、このような従
来の半導体製造装置においては、各処理ステージ71
4内には電源装置は設置されておらず、図示外の補助
ポンプ系と一緒に高周波電源が設けられ、上記各処理ス
テージ71〜74には電源ケーブルで接続されていた。ま
た、図3に示すように、メインコントローラ8が搬送系
3と複数個の処理ステージ7の総てを制御するようにな
っていると共に、上記搬送系3と各処理ステージ7とは
容易に切り離すことができず、着脱可能とはなっていな
かった。従って、図4に示すようにマルチチャンバ方式
の処理ステージ71〜74において、一つの処理ステージ
1が故障したり、あるいはその反応室4内を清掃する
場合は、上記一つの処理ステージ71の修理又は清掃の
ために他の処理ステージ72〜74及び共通部分である搬
送系3も停止させなければならなかった。このことか
ら、複数個の処理ステージ71〜74を有していても、実
際に半導体の製造に寄与している時間率は低く、装置全
体の稼働率が低下するものであった。また、図3に示す
ように、メインコントローラ8から各処理ステージ7に
複数本の制御ケーブル12,12,…がそれぞれ接続さ
れているので、装置全体としては多数の制御ケーブル1
2,12,…が張られ、構造が複雑かつ大形化するもの
であった。
【0005】そこで、本発明は、このような問題点に対
処し、ワークに所定の処理を実行する処理ステージを複
数個備えたマルチチャンバ方式のものにおいて製品の製
造に寄与する稼働率を向上することができる半導体製造
装置を提供することを目的とする。
【0006】
【課題を解決するための手段】上記目的を達成するため
に、本発明による半導体製造装置は、半導体製造のワー
クを順次処理ステージへ送り出すローダ部及び上記処理
ステージでの所定の処理終了後のワークを受領して積層
するアンローダ部と、このローダ部及びアンローダ部と
上記処理ステージとの間でワークを移送する搬送系と、
上記ワークに対し所定の処理を実行する反応室及び主ポ
ンプ並びにガスユニットを有する複数個の処理ステージ
と、上記各構成要素の動作を制御するメインコントロー
ラとを備えて成る半導体製造装置において、上記ローダ
部及びアンローダ部と搬送系とメインコントローラとで
上記複数個の処理ステージに共通なメインモジュールを
形成すると共に、上記複数個の処理ステージの1個1個
の内部に電源装置を設け且つ上記メインモジュールのメ
インコントローラからの指令を受けて個々の処理ステー
ジ内の動作を制御するローカルコントローラを設けて1
個1個独立に動作するチャンバモジュールを形成し、さ
らに上記メインモジュールに対する個々のチャンバモジ
ュールの接続部は切り離し可能の構造とし且つ上記チャ
ンバモジュールの着脱を案内するためのガイド機構を設
けたものである。
【0007】
【発明の実施の形態】以下、本発明の実施の形態を添付
図面に基づいて詳細に説明する。図1は本発明による半
導体製造装置の実施の形態を示す側面から見た概略構成
図である。この半導体製造装置は、例えばプラズマCV
D装置、低圧CVD装置、プラズマエッチング装置、ス
パッタリング装置などであり、図1に示すように、ロー
ダ部1及びアンローダ部2と、搬送系3と、処理ステー
ジ7と、メインコントローラ8とを備えて成る。なお、
上記半導体製造装置の全体の配置は、図4に示す従来例
と同様に配置されている。
【0008】上記ローダ部1は、半導体製造のワーク、
例えばウェハを収納棚内に積層しておき順次後述の処理
ステージ7へ送り出すもので、上記収納棚内に上下に所
定ピッチでワークを積層しておくと共に1枚ずつ繰り出
すようになっている。また、アンローダ部2は、上記処
理ステージ7での所定の処理終了後のワークを受領して
積層するもので、順次受領したワークを1枚ずつ収納棚
内に上下に所定ピッチで積層するようになっている。搬
送系3は、上記ローダ部1及びアンローダ部2と処理ス
テージ7との間でワークを移送するもので、例えばモー
タとベルトコンベアなどから成る。なお、ロードロック
9は、上記ローダ部1又はアンローダ部2と搬送系3と
の間でワークを受け渡しするものである。
【0009】処理ステージ7は、上記搬送系3で送られ
てきたワークを受け取り半導体製造のために所定の処理
を行うもので、上記ワークに対し成膜、エッチング等の
所定の処理を実行する反応室4と、この反応室4内の空
気を抜いて真空にするための主ポンプ5と、上記反応室
4内へワークと反応させるための反応性ガス及び不活性
ガス(例えばN2ガス)などを供給するガスユニット6
と、後述の高周波電源15からの電力を入力して反応室
4へ供給するために調整する高周波マッチャ11とを有
して成る。なお、この処理ステージ7は、図4に示すよ
うに、搬送系3を中心として放射状に複数個(71
4)配置され、マルチチャンバ方式に構成されてい
る。また、上記搬送系3と反応室4との間には、ワーク
を受け渡しする際にその通路を開閉する仕切弁10が設
けられている。そして、メインコントローラ8は、上記
各構成要素の動作を制御するものであり、例えばCPU
(中央処理装置)と操作パネルとから成る。
【0010】ここで、本発明においては、上記ローダ部
1及びアンローダ部2と、ロードロック9と、搬送系3
と、仕切弁10と、メインコントローラ8とで、上記複
数個の処理ステージ7に共通なメインモジュール13を
形成している。このメインモジュール13は、上記の構
成要素がまとまって独立に動作するユニットとなるもの
で、上記メインコントローラ8の制御によりローダ部1
からワークを取り出し搬送系を介して各処理ステージ7
の反応室4へ送り、この反応室4で処理後のワークを受
け取り搬送系3を介してアンローダ部2へ収納積層する
ように動作する。
【0011】また、上記処理ステージ7の1個1個はそ
の全体が筐体14の中に収納されており、この内部に電
源装置としての高周波電源15が設けられると共に、上
記メインモジュール13のメインコントローラ8からの
指令を受けて個々の処理ステージ7内の動作を制御する
ローカルコントローラ16が設けられて、1個1個独立
に動作するチャンバモジュール17が形成されている。
なお、上記ローカルコントローラ16は、例えばCPU
と操作パネルとから成る。このチャンバモジュール17
は、上記の構成要素がまとまって独立に動作するユニッ
トとなるもので、上記ローカルコントローラ16は、前
記メインコントローラ8と1本の制御ケーブル12で接
続されており、チャンバモジュール17内の各構成要素
とは複数の制御ケーブル18でそれぞれ接続されてい
る。
【0012】さらに、前記メインモジュール13に対す
る個々のチャンバモジュール17の接続部は切り離し可
能な構造とされ、且つ上記チャンバモジュール17の着
脱を案内するためのガイド機構が設けられている。すな
わち、図1に示す仕切弁10の部位で搬送系3と反応室
4とが切り離せるようになっており、上記仕切弁10を
閉じた状態でその部位に止められた結合ボルトを緩める
ことにより、仕切弁10を反応室4側に付けたまま搬送
系3から切り離すことができるようになっている。
【0013】そして、上記チャンバモジュール17の筐
体14の底面には回転自在のガイドローラ19,19が
設けられ、上記筐体14の下方に直線状に設けられたガ
イドレール20に上記ガイドローラ19,19を位置合
わせして乗せることにより、チャンバモジュール17を
矢印A,Bのように移動可能としている。さらに、図2
に示すように、搬送系3の一側面には反応室4との接続
を案内するためのガイド凹部21,21が形成させると
共に、これと対向する反応室4の一側面には搬送系3と
の接続を案内するためのガイドピン22,22が突出さ
れている。このガイド凹部21にガイドピン22を合致
させることで、搬送系3と反応室4との接続の位置合わ
せをするようになっている。そして、上記ガイドローラ
19と、ガイドレール20と、ガイド凹部21と、ガイ
ドピン22とで、チャンバモジュール17の着脱を案内
するためのガイド機構を構成している。
【0014】このように構成されたチャンバモジュール
17は、図3に示す従来例と異なり、その内部に高周波
電源15を有すると共に、ローカルコントローラ16を
有することから、1個1個のチャンバモジュール17ご
とに独立に動作することができ、さらにメインモジュー
ル13に対する接続部の切り離し構造とガイド機構とに
より、個々のチャンバモジュール17を容易に交換する
ことができる。
【0015】
【発明の効果】本発明は以上のように構成されたので、
複数個の処理ステージに共通なメインモジュールを形成
すると共に、1個1個独立に動作するチャンバモジュー
ルを形成し、さらに上記メインモジュールに対する個々
のチャンバモジュールの接続部は切り離し可能の構造と
し且つ上記チャンバモジュールの着脱を案内するための
ガイド機構を設けたことにより、1個1個のチャンバモ
ジュールごとに独立に動作してワークに対し所定の処理
を実行できると共に、個々のチャンバモジュールを容易
に交換することができる。従って、一つの処理ステージ
が故障したり、あるいはその反応室内を清掃する場合で
も、上記メインモジュールは停止することなく、故障又
は清掃に関係ないチャンバモジュールはそれぞれ独立に
動作することができ、ワークに対して所定の処理を実行
することができる。また、修理又は清掃を行うべきチャ
ンバモジュールはメインモジュールから切り離し、別の
使用可能なチャンバモジュールをガイド機構を利用して
取り付けることにより、短時間で製造を再開することが
できる。このことから、ワークに所定の処理を実行する
処理ステージを複数個備えたマルチチャンバ方式のもの
において、製品の製造に寄与する稼働率を向上すること
ができる。
【0016】また、図1に示すように、メインモジュー
ルのメインコントローラから複数のチャンバモジュール
のローカルコントローラに接続される制御ケーブルはそ
れぞれ1本だけでよいので、装置全体として従来例に比
し制御ケーブルの本数を格段に少なくすることができ、
構造が簡単かつ小形化すると共に、メインモジュールと
チャンバモジュールとの接続作業を容易とすることがで
きる。
【図面の簡単な説明】
【図1】本発明による半導体製造装置の実施の形態を示
す側面から見た概略構成図である。
【図2】メインモジュールとチャンバモジュールとの接
続部の構造を示す図1のC矢視図である。
【図3】従来例による半導体製造装置を示す側面から見
た概略構成図である。
【図4】本発明及び従来例による半導体製造装置の全体
の配置例を示す平面図である。
【符号の説明】
1…ローダ部 2…アンローダ部 3…搬送系 4…反応室 5…主ポンプ 6…ガスユニット 7,71〜74…処理ステージ 8…メインコントローラ 10…仕切弁 11…高周波マッチャ 12,18…制御ケーブル 13…メインモジュール 14…筐体 15…高周波電源 16…ローカルコントローラ 17…チャンバモジュール 19…ガイドローラ 20…ガイドレール 21…ガイド凹部 22…ガイドピン

Claims (1)

    【特許請求の範囲】
  1. 【請求項1】 半導体製造のワークを順次処理ステージ
    へ送り出すローダ部及び上記処理ステージでの所定の処
    理終了後のワークを受領して積層するアンローダ部と、
    このローダ部及びアンローダ部と上記処理ステージとの
    間でワークを移送する搬送系と、上記ワークに対し所定
    の処理を実行する反応室及び主ポンプ並びにガスユニッ
    トを有する複数個の処理ステージと、上記各構成要素の
    動作を制御するメインコントローラとを備えて成る半導
    体製造装置において、上記ローダ部及びアンローダ部と
    搬送系とメインコントローラとで上記複数個の処理ステ
    ージに共通なメインモジュールを形成すると共に、上記
    複数個の処理ステージの1個1個の内部に電源装置を設
    け且つ上記メインモジュールのメインコントローラから
    の指令を受けて個々の処理ステージ内の動作を制御する
    ローカルコントローラを設けて1個1個独立に動作する
    チャンバモジュールを形成し、さらに上記メインモジュ
    ールに対する個々のチャンバモジュールの接続部は切り
    離し可能の構造とし且つ上記チャンバモジュールの着脱
    を案内するためのガイド機構を設けたことを特徴とする
    半導体製造装置。
JP24234595A 1995-08-29 1995-08-29 半導体製造装置 Pending JPH0964149A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24234595A JPH0964149A (ja) 1995-08-29 1995-08-29 半導体製造装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24234595A JPH0964149A (ja) 1995-08-29 1995-08-29 半導体製造装置

Publications (1)

Publication Number Publication Date
JPH0964149A true JPH0964149A (ja) 1997-03-07

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ID=17087824

Family Applications (1)

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