KR970003588A - 반도체 웨이퍼 연마용 연마제 및 연마방법 - Google Patents

반도체 웨이퍼 연마용 연마제 및 연마방법 Download PDF

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Publication number
KR970003588A
KR970003588A KR1019960019069A KR19960019069A KR970003588A KR 970003588 A KR970003588 A KR 970003588A KR 1019960019069 A KR1019960019069 A KR 1019960019069A KR 19960019069 A KR19960019069 A KR 19960019069A KR 970003588 A KR970003588 A KR 970003588A
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South Korea
Prior art keywords
polishing
semiconductor wafer
abrasive
polyolefin
back surface
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KR1019960019069A
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English (en)
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KR100203340B1 (ko
Inventor
히사시 마스무라
기요시 스즈키
히데오 구도
데루아키 후카미
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이가라시 스구루
신 에츠 한도타이 가부시키가이샤
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Publication of KR970003588A publication Critical patent/KR970003588A/ko
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Publication of KR100203340B1 publication Critical patent/KR100203340B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/21—Circular sheet or circular blank

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

웨이퍼표면의 저휘도화 연마처리를 가능하게 하고, 센서에 의한 웨이퍼의 표면과 이면의 검지가 가능하며, 발진성을 저하시키는 것에 의해 이면의 치핑에 의한 발진을 억제하여 디바이스의 수율을 높일 수 있도록 한 신규의 반도체 웨이퍼 연마용 연마제 및 연마방법, 그리고 또 종래에 없는 이면형상을 가지는 신규한 반도체 웨이퍼를 제공한다.
반도체 웨이퍼 연마용 연마제가, 실리카가 함유된 연마제를 주성분으로 하고, 폴리올레핀계 미립자재료를 첨가하여 이루어진 것을 특징으로 한다.

Description

반도체 웨이퍼 연마용 연마제 및 연마방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 실시예 1에 있어서의 저휘도화 연마처리된 웨이퍼표면의 현미경사진.

Claims (8)

  1. 실리카가 함유된 연마제를 주성분으로 하고, 폴리올레핀계 미립자재료를 첨가하여 이루어진 것을 특징으로 하는 반도체 웨이퍼 연마용 연마제.
  2. 제1항에 있어서, 상기 실리카가 함유된 연마제가 콜로이드 실리카 연마제인 것을 특징으로 하는 반도체 웨이퍼 연마용 연마제.
  3. 제1항 또는 제2항에 있어서, 상기 폴리올레핀계 미립자재료가 폴리올레핀 수성현탁액인 것을 특징으로 하는 반도체 웨이퍼 연마용 연마제.
  4. 제1항 내지 제3항 중 어느 한 항에 있어서, 상기 폴리올레핀계 미립자재료의 첨가량이 연마제의 총량에 대하여 0.01 ~ 1wt%의 범위인 것을 특징으로 하는 반도체 웨이퍼 연마용 연마제.
  5. 반도체 웨이퍼를 연마함에 있어서,상기 제1항 내지 제4항의 어느 한 항에 기재한 반도체 웨이퍼 연마용 연마제를 사용하여 저휘도화 연마를 행하는 것을 특징으로 하는 반도체 웨이퍼의 연마방법.
  6. 표면은 유리면이고, 이면이 제5항에 기재한 방법에 의하여 연마된 저휘도화 연마면인 것을 특징으로 하는 반도체 웨이퍼.
  7. 표면은 유리면이고, 이면이 다수의 반구면형상의 작은 돌기를 가지는 것을 특징으로 하는 반도체 웨이퍼.
  8. 상기 반구면형상의 작은 돌기의 높이가 0.05 ~ 0.5㎛이고, 직경이 50 ~ 500㎛인 것을 특징으로 하는 반도체 웨이퍼.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960019069A 1995-06-23 1996-05-31 반도체 웨이퍼 연마용 연마제 및 연마방법 KR100203340B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP95-181130 1995-06-23
JP18113095A JP3134719B2 (ja) 1995-06-23 1995-06-23 半導体ウェーハ研磨用研磨剤及び研磨方法

Publications (2)

Publication Number Publication Date
KR970003588A true KR970003588A (ko) 1997-01-28
KR100203340B1 KR100203340B1 (ko) 1999-06-15

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KR1019960019069A KR100203340B1 (ko) 1995-06-23 1996-05-31 반도체 웨이퍼 연마용 연마제 및 연마방법

Country Status (4)

Country Link
US (2) US5866226A (ko)
EP (1) EP0750335A3 (ko)
JP (1) JP3134719B2 (ko)
KR (1) KR100203340B1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
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KR20010004982A (ko) * 1999-06-30 2001-01-15 김영환 반도체 소자의 산화막 연마용 슬러리 제조 방법

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Publication number Priority date Publication date Assignee Title
KR20010004982A (ko) * 1999-06-30 2001-01-15 김영환 반도체 소자의 산화막 연마용 슬러리 제조 방법

Also Published As

Publication number Publication date
EP0750335A2 (en) 1996-12-27
US5891353A (en) 1999-04-06
EP0750335A3 (en) 1998-09-23
US5866226A (en) 1999-02-02
JP3134719B2 (ja) 2001-02-13
KR100203340B1 (ko) 1999-06-15
JPH097987A (ja) 1997-01-10

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