Razeghi et al., 1986 - Google Patents

Growth of GaInAs‐InP multiquantum wells on garnet (GGG= Gd3Ga5O12) substrate by metalorganic chemical vapor deposition

Razeghi et al., 1986

Document ID
13588885483757870400
Author
Razeghi M
Meunier P
Maurel P
Publication year
Publication venue
Journal of applied physics

External Links

Snippet

Ga0. 47In0. 53As‐InP multiquantum wells grown by low‐pressure metalorganic chemical vapor deposition on garnet (GGG= Gd3Ga5O12 with a= 12.383 Å) substrates are presented for the first time. The x‐ray diffraction pattern shows that the orientation of the epitaxial layer …
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
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    • H01L21/02538—Group 13/15 materials
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
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    • H01L21/02367—Substrates
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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