Tanahashi et al., 1983 - Google Patents

Electrical properties of undoped and Si‐doped Al0. 48In0. 52As grown by liquid phase epitaxy

Tanahashi et al., 1983

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Document ID
16703174832007039235
Author
Tanahashi T
Nakajima K
Yamaguchi A
Umebu I
Publication year
Publication venue
Applied physics letters

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Electrical properties of undoped AloAs Ino52 As layers grown by liquid phase epitaxy (LPE) were studied for the first time. The carrier concentration n (cm-3) and the mobility/-l (cm 2/Vs) were/-l= 4600 cm2/Vs at n= 4.7 X 1015 cm-3 and/-l= 4500 cm2/Vs at n= 5.9 X 1015 cm-3 at …
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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