Biefeld et al., 1992 - Google Patents

The growth of InSb using triisopropylantimony or tertiarybutyldimethylantimony and trimethylindium

Biefeld et al., 1992

Document ID
9922732452912261959
Author
Biefeld R
Gedridge Jr R
Publication year
Publication venue
Journal of crystal growth

External Links

Snippet

The growth of InSb using triisopropylantimony (TIPSb) or tertiarybutyldimethylantimony (TBDMSb) and TMIn was investigated over a temperature range of 350 to 475° C. The growth rates of InSb using TMIn and either TIPSb or TBDMSb at temperatures≤ 425° C …
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    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
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    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
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