Beneking et al., 1985 - Google Patents

High quality epitaxial GaAs and InP wafers by isoelectronic doping

Beneking et al., 1985

Document ID
16492020380265246225
Author
Beneking H
Narozny P
Emeis N
Publication year
Publication venue
Applied physics letters

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Snippet

It is shown that strained isoelectronically doped buffer layers grown on GaAs and InP wafers allow one to reduce the dislocation density drastically by a factor greater than 20. Correspondingly, the photoluminescence efficiency of near‐band‐edge emission is …
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
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