Crumbaker et al., 1989 - Google Patents

Growth of InP on Si substrates by molecular beam epitaxy

Crumbaker et al., 1989

Document ID
5797885304498969606
Author
Crumbaker T
Lee H
Hafich M
Robinson G
Publication year
Publication venue
Applied physics letters

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Snippet

The growth of single‐crystal InP films on (100) Si substrates by molecular beam epitaxy (MBE) is described. Three different buffer layers were grown by gas‐source MBE in order to reduce the density of dislocations created by the 8% InP‐Si lattice mismatch. Double‐crystal …
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
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    • H01L21/02367—Substrates
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    • H01L21/02381—Silicon, silicon germanium, germanium
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