Polyakov et al., 1997 - Google Patents

Growth of GaBN ternary solutions by organometallic vapor phase epitaxy

Polyakov et al., 1997

Document ID
2670205381149596499
Author
Polyakov A
Shin M
Skowronski M
Greve D
Wilson R
Govorkov A
Desrosiers R
Publication year
Publication venue
Journal of electronic materials

External Links

Snippet

Layers of Ga 1-x B x N with compositions from x= 0 to x= 0.07 were grown by organometallic vapor phase epitaxy on sapphire substrates using trimethylgallium, triethylboron (TEB) and NH 3 as precursors. Growth was done in the temperature range from 450 to 1000° C. The …
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