TWI589326B - 發光模組及應用其之光照系統 - Google Patents

發光模組及應用其之光照系統 Download PDF

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TWI589326B
TWI589326B TW103129810A TW103129810A TWI589326B TW I589326 B TWI589326 B TW I589326B TW 103129810 A TW103129810 A TW 103129810A TW 103129810 A TW103129810 A TW 103129810A TW I589326 B TWI589326 B TW I589326B
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Taiwan
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projection
light source
plane
light
sub
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TW103129810A
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TW201507754A (zh
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盧建均
李俊興
智偉 高
戴光佑
謝佳芬
胡鴻烈
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財團法人工業技術研究院
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    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
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    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
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Description

發光模組及應用其之光照系統
本揭露是有關於一種發光模組及應用其之光照系統，且特別是有關於一種具有標記光源之發光模組及應用其之光照系統。
隨著科技的進步，紫外光係被廣泛應用，舉例來說，例如是應用於一般皮膚病變的治療或醫學美容。然而，波長較短的紫外光，例如為波長100~280nm的UVC、或波長為280~320nm的UVB具有較強的能量且為不可見光，使用時容易對眼睛造成傷害，須利用眼鏡進行防護。
此外，傳統紫外光的應用，係以紫外光燈管進行。紫外光燈管具有大面積且無特定指向性，照射區域無法控制。再者，在運用能量較強、波長較短的紫外光時，由於其為不可見光，無法以肉眼判斷施用的位置與面積。
本揭露係有關於一種具有標記光源之發光模組及應用其之光照系統，藉由標記光源與投射光源(紫外光)共焦的設置，完成具有高指向性且安全的發光模組。
根據本揭露，提出一種發光模組，包括一投射光源以及一標記光源。投射光源發出一波長介於100~400nm或波長大於700nm的光線。標記光源發出一波長介於400~780nm的光線。投射光源所發出的光線，在一第一平面上投射出一第一投射範圍，標記光源之光軸在第一平面上係位於第一投射範圍內。
根據本揭露，提出一種光照系統，包括至少一發光模組、一影像擷取模組以及一控制單元。控制單元用以控制發光模組與影像擷取模組。發光模組包括一投射光源以及一標記光源。投射光源發出一波長介於100~400nm或波長大於700nm的光線。標記光源發出一波長介於400~780nm的光線。投射光源所發出的光線，在一第一平面上投射出一第一投射範圍，標記光源之光軸在第一平面上係位於第一投射範圍內。
為了對本揭露之上述及其他方面有更佳的瞭解，下文特舉實施例，並配合所附圖式，作詳細說明如下：
1‧‧‧光照系統
100、101、200、300、400‧‧‧發光模組
102‧‧‧影像擷取模組
103‧‧‧控制單元
104‧‧‧LED驅動單元
105‧‧‧相機模組驅動單元
106‧‧‧顯示單元
107‧‧‧輸入單元
108‧‧‧電源
10‧‧‧載板
20、23、24‧‧‧投射光源
231‧‧‧第一子光源
31、32、33、34‧‧‧標記光源
331、341‧‧‧第二子光源
90‧‧‧患部
C1‧‧‧第一投射範圍
C2‧‧‧第二投射範圍
C3‧‧‧第三投射範圍
C4‧‧‧第四投射範圍
C343、C344、C345‧‧‧投射範圍
C01、C02、C03、S1‧‧‧中心
D‧‧‧投射光源與標記光源的距離
D1‧‧‧第一平面與載板的距離
L20、L31、L32、L34‧‧‧光軸
M‧‧‧方向
P1‧‧‧第一平面
P2‧‧‧第二平面
P3‧‧‧第三平面
P4‧‧‧第四平面
P5‧‧‧第五平面
θ、θ5‧‧‧標記光源之光軸與載板的夾角
θ1、θ2、θ3、θ4、θ6‧‧‧發光角
第1圖繪示本揭露實施例之發光模組的示意圖。
第2圖繪示本揭露實施例之發光模組的示意圖。
第3圖繪示本揭露實施例之發光模組的示意圖。
第4圖繪示本揭露實施例之發光模組的示意圖。
第5圖繪示本揭露實施例之光照系統與系統方塊圖。
以下係參照所附圖式詳細敘述本創作之實施例。圖式中相同的標號係用以標示相同或類似之部分。需注意的是，圖式係已簡化以利清楚說明實施例之內容，圖式上的尺寸比例並非按照實際產品等比例繪製，因此並非作為限縮本發明保護範圍之用。
在本揭露實施例中，發光模組可包括一投射光源與一標記光源。投射光源發出一波長介於100~400nm或波長大於700nm的光線。標記光源發出一波長介於400~780nm的光線。舉例來說，投射光源例如是紫外光源或紅外光源，標記光源例如是可見光源。投射光源所發出的光線，在一第一平面上投射出一第一投射範圍，標記光源之光軸在第一平面上係位於第一投射範圍內。
第1圖繪示本揭露實施例之發光模組100的示意圖。如圖所示，發光模組100包括一投射光源20與一標記光源31。如圖所示，在一實施例中，發光模組100之投射光源20與標記光源31可設置於一載板10上，且彼此的距離為D。
在本實施例中，投射光源20發出一不可見光，例如是波長介於100~400nm或波長大於700nm的光線。標記光源31發出一可見光， 例如是波長介於400~780nm的光線。如第1圖所示，投射光源20在一第一平面P1上投射出一第一投射範圍C1，第一平面P1與載板10的距離為D1。
第一投射範圍C1的中心係位於圖中所標示C01之位置，也就是說，投射光源20之光軸L20投射於第一平面P1上的位置係為中心C01。此外，標記光源31的光軸L31投射於第一平面P1上的位置可重合於第一投射範圍C1的一中心區域，在此，中心區域係定義為以標示C01之位置為中心，輻射向外至第一投射範圍C1的10%的區域。也就是說，光軸L31在第一平面P1上重合於第一投射範圍C1的中心區域。在本實施例中，標記光源31可藉由例如是調整內部的透鏡組或發光二極體(未繪示)，使其光軸L31與投射光源20之光軸L20於第一平面P1上重合於中心C01。
由於本實施之標記光源31係為一可見光源，投射光源20為一不可見光源，因此，在距離載板10一固定距離D1處，可藉由標記光源31標記投射光源20的投射位置，利用可見光源(標記光源31)標記不可見光源(投射光源20)，有效避免因為人眼無法判讀不可見光源而無法準確施用的問題。
在一實施例中，標記光源31係採用人眼可判讀的光源，例如是照度大於5lux的可見光源。此外，由於本實施例係利用標記光源31之光軸L31，標記離投射光源20一固定距離D1之第一平面P1上，投射第一投射範圍C1之中心C01的位置，因此，可採用例如是紅光雷射或可聚焦的發光二極體作為標記光源31。
標記光源31之光軸L31與載板10的夾角為θ，標記光源 31與投射光源的距離為D，因此，第一平面P1與載板10的距離D1可以公式(1)表示：D1=D×tan θ...............................................................(1)
在實際應用上，第一平面P1例如為一操作平面，透過上述公式(1)可決定投射光源20與標記光源31的位置關係，並應用於與載板10具有一固定距離D1的操作平面上。
第2圖繪示本揭露實施例之發光模組200的示意圖。與第1圖之發光模組100類似，發光模組200包括一載板10、一投射光源20與一標記光源32。投射光源20與標記光源32設置於載板10上，且彼此的距離為D。
與第1圖之發光模組100的不同之處，係在於發光模組200之標記光源32在第一平面P1上也可投射出一第二投射範圍C2，第二投射範圍C2與投射光源20在第一平面P1上所投射之第一投射範圍C1部分重疊，舉例來說，第二投射範圍C2可重疊於第一投射範圍C1之面積的50%~100%。在本實施例中，第二投射範圍C2與第一投射範圍C1在第一平面P1上係100%重疊，且標記光源32之光軸L32在第一平面P1上同樣與第一投射範圍C1的中心重合於C02的位置。
也就是說，本揭露實施例之發光模組200在距離載板10一固定距離D1之第一平面P1上，其標記光源32與投射光源20可具有相同的投射中心與相同的投射面積。在一實施例中，標記光源32為一可見光源，投射光源20為一不可見光源，因此，可藉由標記光源32的設置，準確地施用投射光源20，使發光模組200具有更好的指向性。
類似地，本揭露實施例之標記光源32之光軸L32與載板10的夾角可為θ，標記光源32與投射光源20的距離為D，投射光源20具有一發光角θ1，標記光源32具有一發光角θ2，第一平面P1與載板10的距離為D1。因此，投射光源20在第一平面P1上所投射之第一投射範圍C1的面積A可以公式(2)表示：
此外，在本實施例中，由於標記光源32在第一平面P1上投射出之第二投射範圍C2與投射光源20在第一平面P1上所投射之第一投射範圍C1完全重疊，也就是說，第二投射範圍C2與第一投射範圍C1具有相同的面積A，因此，標記光源32之光軸L32與載板10的夾角θ以及標記光源32之發光角θ2具有下列公式(3)的關係：
第3圖繪示本揭露實施例之發光模組300的示意圖。發光模組300包括一載板10、一投射光源23與一標記光源33。在本實施例中，投射光源23包括三個第一子光源231，且第一子光源231呈對稱排列；標記光源33包括三個第二子光源331，且第二子光源331呈對稱排列。
在此，所述對稱排列表示第一子光源231與第二子光源331之排列具有一對稱中心S1。如第3圖所示，三個第一子光源231呈環狀排列，當以S1為對稱中心將三個第一子光源230同時旋轉120度、240度與360度時，第一子光源231的位置會於第3圖所繪示相同。第二子光源331的排列與第一子光源231類似，在此不多加贅述。此外，由於第一子光源 231之對稱中心與第二子光源331之對稱中心係位於第3圖所繪示之中心S1的位置，因此將三個第一子光源231以S1為中心旋轉180度，會與三個第二子光源331的位置重疊。
再者，本揭露並未限定第一子光源231與第二子光源331的數量。在本揭露實施例中，投射光源23可包括至少兩個第一子光源231，標記光源32包括至少兩個第二子光源331，第一子光源231與第二子光源331係呈對稱排列。舉例來說，第一子光源231與第二子光源331可例如呈一環狀排列或一陣列排列，且第一子光源231之對稱中心與第二子光源331之對稱中心皆位於第3圖所繪示之中心S1的位置。
如第3圖所示，第一子光源231在一第二平面P2上可投射出一第三投射範圍C3，第二子光源331在第二平面P2上可投射出一第四投射範圍C4，第三投射範圍C3的中心與第四投射範圍C4的中心重疊。
要注意的是，為了更清楚表達本揭露實施例，圖中僅繪示一個第一子光源231在第二平面P2上投射出第三投射範圍C3，但其他的第一子光源231在第二平面P2上同樣投射出相同第三投射範圍C3。類似地，雖然圖中僅繪示一個第二子光源331在第二平面P2上投射出第四投射範圍C4，但其他的第二子光源331在第二平面P2上同樣投射出相同第四投射範圍C4。
在本實施例中，第四投射範圍C4之面積大於或等於第三投射範圍C3之面積，且第三投射範圍C3至少重疊於第四投射範圍C4之面積的10%。但本發明並未限定於此，相對地，在其他實施例中，第三投射範圍C3之面積也可大於或等於第四投射範圍C4之面積，且第四投射範圍 C4至少重疊於第三投射範圍C3之面積的10%。
此外，投射光源23之第一子光源231具有一發光角θ3，標記光源32之第二子光源331具有一發光角θ4，第二平面P2與載板10的距離為D2。因此，投射光源23在第二平面P2上所投射之第三投射範圍C3的面積A3與標記光源33在第二平面P2上所投射之第四投射範圍C4的面積A4可分別以公式(4)、(5)表示：
由於本揭露實施例之第三投射範圍C3與第四投射範圍C4至少部分重疊，在距離載板10一固定距離D2之第二平面P2上，可藉由標記光源33所投射之第四投射範圍C4判斷投射光源23所投射之第三投射範圍C3。
在本實施例中，第四投射範圍C4在第二平面P2上之投射面積係大於第三投射範圍C3，且第三投射範圍C3與第四投射範圍C4具有相同的中心C03，因此，在第二平面P2上，只要依據標記光源33(例如是可見光)之第四投射範圍C4的位置，即可確保在施用投射光源23(例如是紫外光)時不會超出第四投射範圍C4。
此外，隨著與載板10之距離D2的縮小，投射於第二平面P2上之第三投射範圍C3重疊於第四投射範圍C4之面積的比例會增加。
第4圖繪示本揭露實施例之發光模組400的示意圖。發光模組400包括一載板10、一投射光源24與一標記光源34。在本實施例中， 發光模組400之標記光源34包括兩個第二子光源341，第二子光源341分別設置於投射光源24的兩側，且投射光源24的位置係位於兩個第二子光源341的中點。
在本實施例中，兩個第二子光源341在距離載板10一固定距離D3之第三平面P3上之投射範圍C343係完全重疊，且投射光源24在第三平面P3上具有一第一照度。在一實施例中，第一照度例如被定義為將投射光源24投射至一目標物體或生物體的預設照度。此外，投射光源24在第三平面P3上的投射範圍也與投射範圍C343完全重疊。
在與載板10距離D4之處可具有一第四平面P4，在本實施例中，第四平面P4與載板10的距離較第三平面P3與載板10的距離近，也就是說，第四平面P4可介於載板10與第三平面P3之間。兩個第二子光源341在第四平面P4上之投射範圍C344可至少部分重疊。隨著第四平面P4與載板的距離D4越大，兩個投射範圍C344的重疊程度也越大，直到第三平面P3的位置，兩個投射範圍(C343)係完全重疊。
如第4圖所示，在本實施例中，兩個投射範圍C344在第四平面P4上例如是開始重疊(也就是兩個投射範圍C344在第四平面P4上開始接觸)，且投射光源24在第四平面P4上具有一第二照度，第二照度大於第一照度，例如為第一照度的120%，但不以此為限。
在與載板10距離D5之處可具有一第五平面P5。在本實施例中，第五平面P5與載板10的距離較第三平面P3與載板10的距離遠，也就是說，第三平面P3可介於載板10與第五平面P5之間。此外，兩個第二子光源341在第五平面上之投射範圍345係分離。
如第4圖所示，在本實施例中，當兩個投射範圍C345在第五平面P5上之投射範圍C345完全分離時，投射光源24在第五平面P5上具有一第三照度，第三照度小於第一照度，例如為第一照度的80%，但不以此為限。
由於第一照度可被定義為將投射光源24投射至一目標物體或生物體的預設照度，一般來說，當目標物體或生物體設置於本實施例中距離載板10為D4的第四平面P4至距離載板10為D5的第五平面P5之間的距離，也就是投射光源24之照度介於第二照度(例如為第一照度的120%)和第三照度(例如為第一照度的80%)之間時，可為投射光源24的理想操作距離。
因此，可藉由標記光源34(例如是可見光)之兩個第二子光源341的投射範圍的位置關係，例如在第四平面P4上開始重疊，在第三平面P3上完全重疊，在第五平面P5上完全分離，來標記投射光源24(例如是不可見光)的理想使用距離。
在本實施例中，標記光源34之第二子光源341的光軸L34與載板10的夾角為θ5，且第二子光源341具有一發光角θ6。因此，第二子光源341的光軸L34與載板10的夾角為θ5可以公式(6)表示：
第5圖繪示本揭露實施例之光照系統1與系統方塊圖。如圖所示，光照系統1包括至少一發光模組101、一影像擷取模組102以及一控 制單元103，控制單元103用以控制發光模組101與影像擷取模組102。
舉例來說，控制單元103透過例如是LED驅動單元104驅動發光模組101，透過例如是相機模組驅動單元105驅動影像擷取模組102。在一實施例中，光照系統1也可包括一顯示單元106、一輸入單元107與一電源108。
此外，第5圖之發光模組101例如是第1圖所繪示之發光模組100，可包括一載板10、一投射光源20與一標記光源31。投射光源20與標記光源31設置於載板10上。投射光源20可發出一波長介於100~400nm或波長大於700nm的光線，標記光源31可發出一波長介於400~780nm的光線。如圖所示，光照系統1可例如應用於一光療設備中，沿著圖中之方向M移動，而光照系統1之發光模組101可針對一特定區域的患部，例如是圖中之手的患部90進行紫外光照射治療。
然而，雖然上述係以發光模組101為第1圖所繪示之發光模組100進行說明，但本發明並未限定於此。第2~4圖所繪示之發光模組200、300、400與其他實施例之發光模組也可應用於第5圖之光照系統1中。
承上述說明，本揭露實施例之發光模組與應用其之光照設備，可藉由標記光源(例如是可見光源)的設置，使投射光源(例如是紫外光源)在一特定範圍內進行投射。相較於傳統的紫外光燈管僅適用於大面積區域照射且不易控制，本揭露實施例之發光模組與應用其之光照設備更具有指向性。此外，本揭露實施例之發光模組與應用其之光照設備可作為醫療或美容器材，於此用途時，可先於病灶區域的確認後，再針對該區域進行實際的光照射，提高醫療安全性。
綜上所述，雖然本發明已以實施例揭露如上，然其並非用以限定本發明。本發明所屬技術領域中具有通常知識者，在不脫離本發明之精神和範圍內，當可作各種之更動與潤飾。因此，本發明之保護範圍當視後附之申請專利範圍所界定者為準。
100‧‧‧發光模組
10‧‧‧載板
20‧‧‧投射光源
31‧‧‧標記光源
C1‧‧‧第一投射範圍
C01‧‧‧中心
D‧‧‧投射光源與標記光源的距離
D1‧‧‧第一平面與載板的距離
L20、L31‧‧‧光軸
P1‧‧‧第一平面
θ‧‧‧標記光源之光軸與載板的夾角

Claims (10)

  1. 一種光照系統，包括：複數個發光模組，其中每一該些發光模組，包括：一投射光源，發出一波長介於100~400nm或波長大於700nm的光線；一標記光源，發出一波長介於400~780nm的光線；以及一載板，該投射光源與該標記光源設置於該載板上；其中，該投射光源所發出的光線，在一第一平面上投射出一第一投射範圍，該標記光源之光軸在該第一平面上係位於該第一投射範圍內；以及一控制單元，該控制單元用以控制該些發光模組，使每一該些發光模組針對一特定區域進行照射。
  2. 如申請專利範圍第1項所述之光照系統，其中該標記光源之光軸在該第一平面上係重合於該第一投射範圍的一中心區域，該中心區域為以該第一投射範圍的中心，輻射向外至該第一投射範圍的10%的區域。
  3. 如申請專利範圍第1項所述之光照系統，其中該標記光源在該第一平面上投射出一第二投射範圍，該第二投射範圍與該第一投射範圍部分重疊。
  4. 如申請專利範圍第1項所述之光照系統，其中該投射光源包括至少兩個第一子光源，該些第一子光源係呈 對稱排列；該標記光源包括至少兩個第二子光源，該些第二子光源係呈對稱排列；該些第一子光源在一第二平面上投射出一第三投射範圍，該些第二子光源在該第二平面上投射出一第四投射範圍，該第三投射範圍的中心與該第四投射範圍的中心重疊。
  5. 如申請專利範圍第4項所述之光照系統，其中該第三投射範圍之面積大於或等於該第四投射範圍之面積，且該第四投射範圍至少重疊於該第三投射範圍之面積的10%。
  6. 如申請專利範圍第1項所述之光照系統，其中該標記光源包括兩個第二子光源，該些第二子光源分別設置於該投射光源的兩側；該投射光源設置於該些第二子光源的中點。
  7. 如申請專利範圍第6項所述之光照系統，其中該些第二子光源在一第三平面上之投射範圍完全重疊，且該投射光源在該第三平面上具有一第一照度。
  8. 如申請專利範圍第7項所述之光照系統，其中該些第二子光源在一第四平面上之投射範圍至少部分重疊，該第四平面與該載板的距離較該第三平面與該載板的距離近，且該投射光源在該第四平面上具有一第二照度，該第二照度大於該第一照度。
  9. 如申請專利範圍第7項所述之光照系統，其中當該些第二子光源在一第五平面上之投射範圍完全分離時，該投射光源在該 第五平面上具有一第三照度，該第三照度小於該第一照度，且該第五平面與該載板的距離較該第三平面與該載板的距離遠。
  10. 如申請專利範圍第1項所述之光照系統，更包括一影像擷取模組，其中該控制單元透過一相機模組驅動單元來控制該影像擷取模組。
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US9171779B2 (en) 2015-10-27
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