JP4580833B2 - Substrate processing system and trap apparatus - Google Patents

Description

  The present invention relates to a substrate processing apparatus and a trap apparatus for a substrate processing apparatus that removes residual components from a substrate processed gas as an exhaust gas.

FIG. 7 is an explanatory diagram of a trap apparatus connected to a conventional substrate processing chamber.
This trap device T _R is introduced and the filter walls a capturing the recovered components such as unreacted components and residual components, and the trap body (casing) b for accommodating the filter wall a, a substrate processing chamber atmosphere trap body b And an outlet portion d for discharging the purified gas after being purified by the filter wall a.
The filter wall a is formed in a spiral shape and forms a spiral gas path portion e in the trap body b, and an outlet of the inlet portion c communicates with an upstream portion of the gas path portion e. An inlet (not shown) of the part d communicates with the downstream part of the gas path part e.
Further, a baffle plate (not shown) for interrupting the flow is disposed in the gas path portion e every round, and the flow of the baffle plate prevents the flow of the substrate processing chamber from the filter wall a. Is supposed to pass through.
The trap device T _R, attached to a gas exhaust pipe of a substrate processing apparatus (not shown) (not shown), the substrate is treated room atmosphere through the gas exhaust pipe of the substrate processing apparatus in the trap body b through the inlet section c Then, the atmosphere in the substrate processing chamber turns in the gas path part e along the filter wall a. And it passes through the filter wall a and reaches a downstream part by damming every round by a baffle plate.
Thus, in the conventional trap apparatus, the substrate processing chamber atmosphere passes through the filter wall a a plurality of times, thereby collecting and purifying recovered components such as unreacted components and residual components in the substrate processing chamber atmosphere. The cleaned gas is discharged from the outlet part d.
Unreacted components and residual components adhering to the filter wall a, that is, solid components are collected at every predetermined maintenance cycle.

In this way, the conventional trap device captures unreacted components and residual components as layered solids on the filter wall and collects them every predetermined maintenance cycle, but before reaching the maintenance cycle, the outlet of the inlet section In some cases, local clogging may occur, and maintenance may have to be performed at an early stage.
Therefore, the structure in the inlet part and the trap body part of the conventional trap apparatus and the flow of the atmosphere in the substrate processing chamber in the inlet part and the trap body part are examined.
FIG. 8 is a cross-sectional view taken along the axial direction of the inlet portion of the conventional trap apparatus, and is a partially cut-away cross-sectional view showing the trap body in a broken state.
The inlet part c and the gas path part e in the trap body b communicate with each other through a linear communication path f along the thickness direction of the trap body b, but at least one of the trap body attachment parts of the inlet part c. Has a trumpet shape so that the atmosphere in the substrate processing chamber collides with the inner surface of the communication path f.
Figure 9 is an analysis diagram analyzed by simulation flow inlet portion c side of the trap device T _R.
As shown in FIG. 9, in the trap device T _R impinges on the inner surface of the substrate processing chamber atmosphere communicating passage f, a large disturbance R is observed to occur in the communication path f.
Therefore, in the conventional trap apparatus, the unreacted component and the remaining component are separated when the atmosphere in the substrate processing chamber collides with the inner surface of the communication path f, and the separated unreacted component and the remaining component are disturbed in the communication path. It is presumed that clogging occurred due to repeated adhesion and growth while repeatedly colliding with the inner surface of the communication path f and the filter wall a while being taken into R.
Therefore, a technical problem to be solved in order to make the flow of the atmosphere in the substrate processing chamber in the trap portion and the communication path smooth, and the present invention aims to solve this problem.

The first means includes a substrate processing chamber for processing the substrate, a heating means for heating the substrate, a supply system for supplying a desired gas to the substrate processing chamber, and an exhaust system for exhausting the atmosphere in the substrate processing chamber. A trap device provided in the exhaust system for solidifying and capturing the gas exhausted from the processing chamber, the trap body including the trap body and an inlet portion connected to the trap body. The trap body includes a curved gas path portion therein, and at least a part of the inlet portion is formed by a curved pipe that smoothly guides the atmosphere in the substrate processing chamber to the gas path portion. A system is provided.
In this way, the atmosphere in the substrate processing chamber flows smoothly to the gas path portion in the trap body, so that clogging due to disturbance is prevented.

The second means is a trap device that solidifies and traps gas exhausted from an exhaust system communicating with the substrate processing chamber, and includes the trap body and the trap portion including the inlet portion connected to the trap body. The trap body includes a curved gas path portion therein, the trap body includes a curved gas path portion therein, and at least a part of the inlet portion includes the gas. The present invention provides a trap apparatus for a substrate processing system, which is formed by a curved pipe that smoothly guides an atmosphere in a substrate processing chamber to a path portion.
In this way, as in the first means, the atmosphere in the substrate processing chamber flows smoothly through the gas path in the trap body, so that clogging due to turbulence is prevented.

  In the first means and the second means, preferably, if the bent pipe of the inlet portion is formed along the extension line of the gas path portion, the flow becomes smoother.

  As described above, according to the present invention, the atmosphere in the substrate processing chamber can be smoothly and smoothly flowed, so that the trap apparatus can be prevented from being clogged, and maintenance can be performed at a predetermined maintenance cycle. Exhibits an excellent effect.

  First, a film forming process using an ALD method, which is one of the CVD methods, will be briefly described as an example of a process processing on a substrate such as a wafer performed in the embodiment of the present invention.

  In the ALD method, under one film formation condition (temperature, time, etc.), two kinds (or more) of raw material gases used for film formation are alternately supplied onto the substrate one by one, and one atomic layer unit. In this method, the film is adsorbed by using a surface reaction to form a film.

That is, for the chemical reaction used, for example, in the case of forming a SiN (silicon nitride) film, DCS (SiH ₂ Cl ₂ , dichlorosilane) and NH ₃ (ammonia) are used in the ALD method. These reaction gases enable high-quality film formation at a low temperature of 300 to 600 ° C. Further, the gas supply alternately supplies a plurality of types of reactive gases one by one. And film thickness control is controlled by the cycle number of reactive gas supply. (For example, assuming that the film formation rate is 1 mm / cycle, the process is performed 20 cycles when a film of 20 mm is formed.)

  An embodiment of a processing apparatus according to the present invention will be described below.

FIG. 1 is a schematic configuration diagram of a vertical substrate processing furnace according to the present embodiment, and shows a processing furnace part in a longitudinal section. FIG. 2 is a schematic configuration diagram of a vertical substrate processing furnace according to the present embodiment, and shows the processing furnace part in a cross section.
A reaction tube 203 is provided as a reaction vessel for processing the wafer 200 as a substrate inside a heater 207 as a heating means, and the lower end opening of the reaction tube 203 is an O-ring as an airtight member by a seal cap 219 as a lid. The processing chamber 201 which is a substrate processing chamber is formed by at least the heater 207, the reaction tube 203, and the seal cap 219. A boat 217 as a substrate holding means is erected on the seal cap 219 via a quartz cap 218, and the quartz cap 218 serves as a holding body for holding the boat 217. Then, the boat 217 is inserted into the processing chamber 201. A plurality of wafers 200 to be batch-processed are stacked on the boat 217 in a horizontal posture in multiple stages in the tube axis direction. The heater 207 heats the wafer 200 inserted into the processing chamber 201 to a predetermined temperature.

  The processing chamber 201 is provided with two gas supply pipes 232a and 232b as gas supply systems for supplying a plurality of types, here two types of gases. Here, from the first gas supply pipe 232a, a buffer chamber 237 formed in the processing chamber 201 described later is further passed through a first mass flow controller 241a that is a flow rate control means and a first valve 243a that is an on-off valve. Through the second gas supply pipe 232b, a second mass flow controller 241b as a flow rate control unit, a second valve 243b as an on-off valve, a gas reservoir 247, and an on-off valve are supplied. The reaction gas is supplied to the processing chamber 201 through a third valve 243c, which is a gas supply unit 249 described later.

  The processing chamber 201 is connected to a vacuum pump 246 which is an exhaust means via a fourth valve 243d by a gas exhaust pipe 231 as a gas exhaust system for exhausting gas, and is evacuated. The fourth valve 243d is an open / close valve that can open and close the valve to stop evacuation / evacuation of the processing chamber 201, and further adjust the valve opening to adjust the pressure. A trap device 100 (described later) is provided in the middle of the gas exhaust pipe 231.

  The arc-shaped space between the inner wall of the reaction tube 203 constituting the processing chamber 201 and the wafer 200 is a gas dispersion space along the loading direction of the wafer 200 on the inner wall above the lower part of the reaction tube 203. A buffer chamber 237 is provided, and a first gas supply hole 248 a that is a supply hole for supplying a gas is provided at the end of the wall adjacent to the wafer 200 in the buffer chamber 237. The first gas supply hole 248 a opens toward the center of the reaction tube 203. The first gas supply holes 248a have the same opening area from the lower part to the upper part, and are provided at the same opening pitch.

  At the end of the buffer chamber 237 opposite to the end where the first gas supply hole 248a is provided, a nozzle 233 is also disposed along the stacking direction of the wafer 200 from the bottom to the top of the reaction tube 203. Has been. The nozzle 233 is provided with a second gas supply hole 248b which is a supply hole for supplying a plurality of gases. When the differential pressure between the buffer chamber 237 and the processing chamber 201 is small, the second gas supply hole 248b may have the same opening area and the same opening pitch from the upstream side to the downstream side. When the pressure is large, the opening area is increased from the upstream side toward the downstream side, or the opening pitch is reduced.

  In the present embodiment, by adjusting the opening area and the opening pitch of the second gas supply holes 248b from the upstream side to the downstream side, first, there is a difference in gas flow velocity from each of the second gas supply holes 248b. The gas whose flow rate is almost the same is ejected. Then, the gas ejected from each of the second gas supply holes 248b is ejected into the buffer chamber 237 and once introduced, and the flow velocity difference of the gas is made uniform.

  That is, in the buffer chamber 237, the gas ejected from each second gas supply hole 248b is ejected from the first gas supply hole 248a to the processing chamber 201 after the particle velocity of each gas is reduced in the buffer chamber 237. During this time, the gas ejected from each of the second gas supply holes 248b could be a gas having a uniform flow rate and flow velocity when ejected from each of the first gas supply holes 248a.

Further, in the buffer chamber 237, the first rod-shaped electrode 269 that is a first electrode having an elongated structure and the second rod-shaped electrode 270 that is a second electrode are electrodes that are protective tubes that protect the electrode from the top to the bottom. One of the first rod-shaped electrode 269 and the second rod-shaped electrode 270 is connected to a high-frequency power source 273 via a matching device 272, and the other is grounded as a reference potential. It is connected to the. As a result, plasma is generated in the plasma generation region 224 between the first rod-shaped electrode 269 and the second rod-shaped electrode 270.

  The electrode protection tube 275 has a structure in which each of the first rod-shaped electrode 269 and the second rod-shaped electrode 270 can be inserted into the buffer chamber 237 while being isolated from the atmosphere of the buffer chamber 237. Here, if the inside of the electrode protection tube 275 has the same atmosphere as the outside air (atmosphere), the first rod-shaped electrode 269 and the second rod-shaped electrode 270 inserted into the electrode protection tube 275 are oxidized by heating of the heater 207. Will be. Therefore, the inside of the electrode protection tube 275 is filled or purged with an inert gas such as nitrogen to keep the oxygen concentration sufficiently low to prevent oxidation of the first rod-shaped electrode 269 or the second rod-shaped electrode 270. A gas purge mechanism is provided.

  Further, a gas supply unit 249 is provided on the inner wall of the reaction tube 203 that is rotated about 120 ° from the position of the first gas supply hole 248a. The gas supply unit 249 is a supply unit that shares the gas supply species with the buffer chamber 237 when a plurality of types of gases are alternately supplied to the wafer 200 one by one in the film formation by the ALD method.

  Similarly to the buffer chamber 237, the gas supply unit 249 also has third gas supply holes 248c, which are supply holes for supplying gas at the same pitch, at a position adjacent to the wafer 200, and a second gas supply pipe 232b at the bottom. Is connected.

  When the differential pressure between the buffer chamber 237 and the processing chamber 201 is small, the third gas supply hole 248c may have the same opening area and the same opening pitch from the upstream side to the downstream side. When is large, it is preferable to increase the opening area or reduce the opening pitch from the upstream side toward the downstream side.

  A boat 217 for mounting a plurality of wafers 200 in multiple stages at the same interval is provided at the center of the reaction tube 203. This boat 217 is a reaction tube by a boat elevator mechanism (not shown) not shown. 203 can be entered and exited. Further, in order to improve the uniformity of processing, a boat rotation mechanism 267 that is a rotation means for rotating the boat 217 is provided. By rotating the boat rotation mechanism 267, the boat 217 held by the quartz cap 218 is removed. It is designed to rotate.

  The controller 121, which is a control means, includes first and second mass flow controllers 241a and 241b, first to fourth valves 243a, 243b, 243c, and 243d, a heater 207, a vacuum pump 246, a boat rotation mechanism 267, and are omitted in the drawing. Connected to the boat lifting mechanism, the high frequency power supply 273, and the matching unit 272, the flow rate adjustment of the first and second mass flow controllers 241a, 241b, the opening / closing operation of the first to third valves 243a, 243b, 243c, 4 valve 243d opening and closing and pressure adjustment operation, heater 207 temperature adjustment, vacuum pump 246 activation / deactivation, boat rotation mechanism 267 rotation speed adjustment, boat elevating mechanism elevating operation control, high frequency power supply 273 power supply control, Impedance control is performed by the matching unit 272.

Next, an example of film formation by the ALD method will be described using an example of forming an SiN film using DCS and NH ₃ gas.

  First, a wafer 200 to be deposited is loaded into the boat 217 and loaded into the processing chamber 201. After carrying in, the following three steps are sequentially executed.

[Step 1]
In Step 1, NH ₃ gas that requires plasma excitation and DCS gas that does not require plasma excitation are caused to flow in parallel. First, the first valve 243a provided in the first gas supply pipe 232a and the fourth valve 243d provided in the gas exhaust pipe 231 are both opened, and the first mass flow controller 241a is operated from the first gas supply pipe 232a. The NH ₃ gas whose flow rate has been adjusted is jetted from the second gas supply hole 248 b of the nozzle 233 to the buffer chamber 237, and the high frequency power supply 273 is passed through the matching unit 272 between the first rod-shaped electrode 269 and the second rod-shaped electrode 270. Then, high frequency power is applied to plasma: excite NH ₃ and exhaust from the gas exhaust pipe 231 while supplying it as an active species to the processing chamber 201. When flowing NH ₃ gas as active species by plasma excitation, the fourth valve 243d is appropriately adjusted so that the pressure in the processing chamber 201 is 10 to 100 Pa. The supply flow rate of NH ₃ controlled by the first mass flow controller 241a is 1000 to 10,000 sccm. The time for which the wafer 200 is exposed to the active species obtained by plasma excitation of NH ₃ is 2 to 120 seconds. The temperature of the heater 207 at this time is set so that the wafer 200 has a temperature of 300 to 600 ° C. Since NH ₃ has a high reaction temperature, it does not react at the above-mentioned wafer temperature. Therefore, the NH ₃ is flowed as an active species by plasma excitation, so that the wafer temperature can be kept in a set low temperature range.

When this NH ₃ is supplied as an active species by plasma excitation, the second valve 243b on the upstream side of the second gas supply pipe 232b is opened, the third valve 243c on the downstream side is closed, and the DCS Also let it flow. As a result, DCS is stored in a gas reservoir 247 provided between the second and third valves 243b and 243c. At this time, the gas flowing in the processing chamber 201 is an active species obtained by plasma-exciting NH ₃ , and DCS does not exist. Therefore, NH ₃ does not cause a vapor phase reaction, NH ₃ became active species excited by plasma is base film and the surface reaction on the wafer 200.

[Step 2]
In Step 2, the first valve 243a of the first gas supply pipe 232a is closed to stop the supply of NH ₃ , but the supply to the gas reservoir 247 is continued. When a predetermined pressure and a predetermined amount of DCS accumulate in the gas reservoir 247, the second valve 243b on the upstream side is also closed, and the DCS is confined in the gas reservoir 247. Further, the fourth valve 243 d of the gas exhaust pipe 231 is kept open, and the processing chamber 201 is exhausted to 20 Pa or less by the vacuum pump 246, and residual NH ₃ is excluded from the processing chamber 201. At this time, if an inert gas such as N ₂ is supplied to the processing chamber 201, the effect of eliminating residual NH ₃ is further enhanced. DCS is stored in the gas reservoir 247 so that the pressure is 20000 Pa or more. In addition, the apparatus is configured such that the conductance between the gas reservoir 247 and the processing chamber 201 is 1.5 × 10 −3 m ³ / s or more. Considering the ratio between the volume of the reaction tube 203 and the volume of the necessary gas reservoir 247, the volume of the reaction tube 203 is preferably 100 to 300 cc when the volume of the reaction tube 203 is 100 l (liter). The gas reservoir 247 is preferably 1/1000 to 3/1000 times the reaction chamber volume.

[Step 3]
In step 3, when the exhaust of the processing chamber 201 is completed, the fourth valve 243d of the gas exhaust pipe 231 is closed to stop the exhaust. The third valve 243c on the downstream side of the second gas supply pipe 232b is opened. As a result, the DCS stored in the gas reservoir 247 is supplied to the processing chamber 201 at once. At this time, since the fourth valve 243d of the gas exhaust pipe 231 is closed, the pressure in the processing chamber 201 is rapidly increased to about 931 Pa (7 Torr). The time for supplying DCS was set to 2 to 4 seconds, and then the time for exposure to the increased pressure atmosphere was set to 2 to 4 seconds, for a total of 6 seconds. The wafer temperature at this time is 300 to 600 ° C. as in the case of supplying NH ₃ . By supplying DCS, NH ₃ and DCS on the base film react with each other to form a SiN film on the wafer 200. After the film formation, the third valve 243c is closed, the fourth valve 243d is opened, and the processing chamber 201 is evacuated to eliminate the gas after contributing to the film formation of the remaining DCS. In addition, if an inert gas such as N ₂ is supplied to the processing chamber 201 at this time, the effect of removing the remaining gas after contributing to the film formation of DCS from the processing chamber 201 is enhanced. Also, the second valve 243b is opened to start supplying DCS to the gas reservoir 247.

  Steps 1 to 3 are defined as one cycle, and a SiN film having a predetermined thickness is formed on the wafer 200 by repeating this cycle a plurality of times.

  In the ALD apparatus, the gas is adsorbed on the surface of the base film. The amount of gas adsorption is proportional to the gas pressure and the gas exposure time. Therefore, in order to adsorb a desired amount of gas in a short time, it is necessary to increase the gas pressure in a short time. In this regard, in the present embodiment, the DCS stored in the gas reservoir 247 is instantaneously supplied after the fourth valve 243d is closed, so the DCS pressure in the processing chamber 201 is rapidly increased. The desired amount of gas can be instantaneously adsorbed.

Further, in the present embodiment, while DCS is stored in the gas reservoir 247, NH ₃ gas, which is a necessary step in the ALD method, is excited as a plasma to be supplied as active species and the processing chamber 201 is exhausted. As a result, no special steps are required to store the DCS. Further, since DCS is flowed after exhausting the inside of the processing chamber 201 and removing NH ₃ gas, both do not react on the way to the wafer 200. The supplied DCS can be effectively reacted only with NH ₃ adsorbed on the wafer 200.

FIG. 3 shows the processing apparatus (see FIGS. 1 and 2) as a vertical CVD system for performing CVD processing by placing wafers 200 having a diameter of 300 mm, which are substrates to be processed, on quartz reaction tubes 203 in multiple stages. The state of incorporation is shown. The cassette 32 containing the wafer 200 is exchanged between the I / O stage 33 installed on the front surface of the system and the outside of the apparatus. A cassette loader 35 is installed inside the I / O stage 33 so that the cassette 32 on the I / O stage 33 can be conveyed to the cassette shelf 34. A wafer transfer machine 38 for transferring the wafers 200 to the boat 217 is arranged inside the cassette shelf 34 so that the wafers 200 can be transferred between the cassette 32 of the cassette shelf 34 and the quartz boat 217. It has become. Since the cassette 32 according to the present embodiment can accommodate 25 wafers 200 and the boat 217 can be loaded with 100 wafers 200, the transfer of the wafer transfer device 38 is repeated several times.
The boat 217 is installed in the boat elevator 36, and is loaded into the reaction tube 203 as the boat 217 is lifted by a lifting mechanism (not shown) of the boat elevator 36. After the boat 217 is inserted into the reaction tube 203, the seal cap 219 that also serves as a base attached to the boat elevator 36 below the boat 217 is in close contact with the reaction tube 203 via an O-ring 220 that is an airtight member. Is retained.
The gas exhaust pipe 231 is provided with the trap device 100 according to the present embodiment on the upstream side of the vacuum pump 246 (see FIG. 3), and the exclusion device 40 is provided on the downstream side.

When performing the film forming process by the CVD system, first, the cassette 32 loaded with the wafer 200 is set on the I / O stage 33. When the cassette 32 is set on the I / O stage 33, the cassette 32 is sequentially conveyed to the cassette shelf 34 by the cassette loader 35. When the transfer of the wafer 200 to the boat 217 is completed, the boat elevator 36 is operated, and the boat 217 is inserted into the reaction tube 203 by the ascent of the boat 217. When the insertion of the boat 217 is completed, the reaction tube 203 is closed by the seal cap 219 at the bottom of the boat 217 and the airtightness is maintained.
While maintaining this state, a reactive gas for CVD at a constant flow rate is supplied into the reaction tube 203, and the pressure in the reaction tube 203 is maintained at a constant pressure. At this time, the reaction tube 203 and the internal wafer 200 are held at a predetermined temperature by the heater 207.
As described above, while maintaining the temperature in the reaction tube 203 at, for example, 750 ° C. and maintaining the pressure in the reaction tube 203 at, for example, 1 Torr, SiH ₂ Cl ₂ (dichlorosilane) and NH ₃ (ammonia Are alternately supplied, a SiN _x film (nitride film) is formed on the surface of the wafer 200.

FIG. 4 is an explanatory view showing the structure of the trap device 100. This figure shows a state in which the upper lid of the trap device 100 is removed.
The trap apparatus 100 includes a filter wall 101 that captures recovered components such as unreacted components and residual components from the atmosphere in the reaction tube, a trap body (casing) 102 that accommodates the filter wall 101, and the gas in the trap body 102. The inlet 103 for introducing the atmosphere in the reaction tube (substrate processing chamber atmosphere) from the exhaust pipe 231 and the atmosphere in the reaction pipe after capturing the recovered components such as unreacted components and residual components are exhausted to the gas exhaust pipe 231. And an outlet unit 104 for the purpose.
The trap body 102 is formed in a cylindrical shape with both ends closed, and the filter wall 101 is built in the trap body 102.
Although not shown in detail in FIG. 4, the filter wall 101 is configured by a filter, and is formed in a spiral shape and then incorporated in the trap body 102.
When the spiral filter wall 101 is built in the trap body 102, a spiral gas path 105 is formed in the trap body 102.
Although not shown in FIG. 4, a baffle plate is arranged in the gas path portion 105 every round, and the baffle plate blocks the gas flow every round. When the atmosphere in the substrate processing chamber passes through the filter wall 101, unreacted components and residual components are captured by the filter wall 101.
An inlet portion 103 for introducing the atmosphere in the substrate processing chamber into the gas passage portion 105 is hermetically attached to the trap body 102 by welding, and the trap body 102 is disposed in the thickness direction as shown in FIG. It communicates with the upstream part of the gas path part 105 through the connecting path 106 penetrating the gas channel.
The outlet portion 104 communicates with the downstream portion of the gas path portion 105 and extends through the end wall of the trap body 102 from the inside to the outside to extend to the outside by a predetermined length.

5A and 5B are cross-sectional views along the axial direction of the inlet portion 103, the connecting passage 106, and the gas passage portion 105. As shown in FIG. 5A, the communication path 106 is a curved through hole along the extended line of the gas path 105, and the inlet 103 is formed on the outer surface of the trap body 102 by welding. Installed airtight. In addition, the inlet portion 103 is a curved tube with a curved attachment side with respect to the trap body 102, and the substrate processing chamber atmosphere sucked into the communication path 106 is prevented from being disturbed. It is a curved pipe that smoothly guides the processing chamber atmosphere. Here, the expression “smoothly guide” includes a form in which there is no protrusion or unevenness in the cross section of the flow, and a turbulent flow due to fluid separation is not generated.
FIG. 5B shows an example in which the curved pipe of the inlet portion 103 is extended to the gas passage portion 105 side and inserted into the communication passage 106. As described above, when the extended portion of the bent pipe of the inlet portion 103 is inserted into the communication path 106 and the inner surface of the communication path 106 is covered by the extended portion of the inlet portion 103, the inlet portion 103 and the communication path 106 are connected. Since there is no joint in the connection between the path 106 and the gas path portion 105, the occurrence of turbulence due to the joint is also suppressed. In this case, the extension part of the inlet part 103 may be further extended and the tip part may be inserted into the upstream part of the gas path part 105. In this case, the upstream portion of the inlet portion 103, the connecting passage 106, and the gas passage portion 105 constitutes a single conduit that smoothly guides the reaction chamber atmosphere to the downstream portion of the passage portion 105 without being disturbed. The atmosphere in the substrate processing chamber can be sucked without causing any disturbance in the gas path portion 105.

FIG. 6 is an analysis diagram analyzing the flow state of the inlet portion 103 and the gas path portion 105 by simulation when the atmosphere in the reaction tube (substrate processing chamber atmosphere) is sucked by the vacuum pump 246.
As shown in the analysis diagram, when at least the trap body side attachment portion of the inlet portion 103 and the connecting passage 106 are included as a curved pipe and these are included as a part of the gas passage portion 105, the inlet portion 103, the connecting passage 106, and the gas The flow of the atmosphere in the reaction tube of the passage portion 105 becomes smooth from the upstream side to the downstream side, and turbulence and stagnation do not occur.

As shown in FIG. 3, the trap apparatus 100 according to the present embodiment is incorporated into the gas exhaust pipe 231 of the system, and even if the film formation of the wafer 200 is repeated, unreacted in the atmosphere in the reaction tube (in the atmosphere in the substrate processing chamber) Collected components such as components and residual components do not adhere locally to the inner surface of the inlet portion 103, the inner surface of the communication path 106, and the upstream portion of the filter wall 101, and extend from the upstream side to the downstream side of the filter wall 101. Thus, it was confirmed that the film adheres substantially uniformly and in layers. In the present embodiment, the adhering substances include an unreacted portion (residual portion) of NH ₃ exhausted from the reaction tube 203 by an inert gas, and DCS (SiH ₂ Cl ₂ , exhausted from the reaction tube 203, This corresponds to the unreacted portion (residual portion) of (dichlorosilane).
Therefore, according to the trap device 100 of the present embodiment, clogging is prevented, and maintenance at a predetermined maintenance cycle becomes possible.
As shown in FIG. 3, the atmosphere in the reaction chamber after purification by the trap device 100 passes through the vacuum pump 246 and is introduced into the exclusion device 40 via the collecting portion 45 of the gas exhaust pipe 231, where the final purification is performed. It is treated and released to the atmosphere as clean exhaust.

  In this embodiment, the curvature of the bent pipe of the inlet portion 103 and the curvature of the connecting path 106 may be any curvature as long as the curvature is smoothly connected to the gas path portion 105 and no clogging occurs as a result. However, the flow is smoother when the gas path portion 105 extends along the extended line direction.

  The trap device 100 may be installed between the vacuum pump 246 and the exclusion device.

In the present embodiment, a system incorporating a vertical CVD processing apparatus is illustrated, but a system incorporating a horizontal processing apparatus or a single wafer processing apparatus may be used.
Furthermore, the trap apparatus 100 according to the present invention can be applied to other processing apparatuses that capture and purify particulate components from exhaust gas.
As described above, the present invention can be modified in various ways, and it is natural that the modified scope extends.

It is a schematic structure figure of a vertical type substrate processing furnace concerning an embodiment of the invention, and is a figure showing a processing furnace part with a vertical section. It is a schematic structure figure of a vertical type substrate processing furnace concerning an embodiment of the invention, and is a figure showing a processing furnace part in a cross section. It is explanatory drawing which shows the substrate processing system incorporating the substrate processing furnace concerning embodiment of this invention. It is explanatory drawing which shows the structure of the trap apparatus concerning one Embodiment of this invention. It is an enlarged view which shows the connection state of an inlet part and a gas path part in a trap apparatus. It is the analysis figure which analyzed by the simulation the state of the flow of an inlet part and a gas path part when the atmosphere in a reaction tube (substrate processing room atmosphere) was sucked with a vacuum pump. It is explanatory drawing of the trap apparatus connected to the conventional substrate processing chamber. It is sectional drawing along the axial direction of the inlet part of the conventional trap apparatus, and is a partially broken sectional view which fractured | ruptured and showed the trap main body. It is the analysis figure which analyzed the flow by the side of the inlet part of the conventional trap apparatus by simulation.

Explanation of symbols

DESCRIPTION OF SYMBOLS 100 Trap apparatus 101 Filter wall 102 Trap body 103 Inlet part 105 Gas path part 106 Connection path

Claims (2)

A substrate processing chamber for processing the substrate;
Heating means for heating the substrate;
A supply system for supplying a desired gas to the substrate processing chamber;
An exhaust system for exhausting the atmosphere in the substrate processing chamber;
A trap device provided in the exhaust system that solidifies and captures gas exhausted from the processing chamber, the trap device including a trap body and an inlet portion connected to the trap body. ,
The trap body passes through the trap body in the thickness direction, and has a communication path to which the inlet part is connected, and a spiral gas path part connected to the communication path,
The communication path is a curved through hole along an extension line of the gas path part,
At least a part of the inlet portion is formed by a curved pipe that smoothly guides the atmosphere in the substrate processing chamber to the communication path . A trap device that solidifies and captures gas exhausted from an exhaust system communicating with a substrate processing chamber,
A trap body, and the trap device including an inlet portion connected to the trap body,
The trap body includes a spiral gas path portion therein and a curved through hole along an extension line of the gas path portion, and the inlet portion is connected to the through hole, and the inlet portion A trap apparatus for a substrate processing system, wherein at least a part of the trap is formed by a curved pipe that smoothly guides the atmosphere in the substrate processing chamber to the communication path .

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