JP2007042897A - Substrate processing system - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate processing system substantially improving performance of a filter wall of a trap device and eliminating a clog in an inlet. <P>SOLUTION: The substrate processing system includes a processing chamber 203 for processing a substrate; a heating means 201 for heating the substrate; a supply system (first gas supply pipe and second gas supply pipe) for supplying a desired gas to the processing chamber 203; an exhaust system (gas exhaust pipe 231) for exhausting an atmosphere in the processing chamber; and the trap device provided in the exhaust system for solidifying and capturing the gas exhausted from the processing chamber 203 including a trap body 102, the inlet 103 connected with the trap body 102, and a gas flow collision member (demister 107 or the like) provided in a gas path 105 of the trap body 102. A detachable internal pipe 109 is provided inside the inlet 103. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a substrate processing system, and more particularly to a substrate processing system provided with a trap device for removing residual components from a processing chamber atmosphere exhausted from a substrate processing chamber.

FIG. 6 is an explanatory view showing a structure of a trap device inserted in an exhaust system of a conventional substrate processing apparatus.
This trap device T _R introduces a filter wall a capturing the recovered components such as unreacted components and residual components, and the trap body (casing) b for accommodating the filter wall a, the process chamber atmosphere trap body b An inlet part c and an outlet part d for discharging the purified gas purified by the filter wall a are provided.
The filter wall a is formed in a spiral shape and forms a spiral gas path portion e in the trap body b, and an outlet of the inlet portion c communicates with an upstream portion of the gas path portion e. An inlet (not shown) for d communicates with the downstream part of the gas path part e.
Further, a baffle plate (not shown) for interrupting the flow is arranged in the gas path section e every round, and the flow chamber dams the flow path by the baffle plate, so that the atmosphere in the processing chamber passes through the filter wall a. It has come to pass.
The trap device T _R, attached to a gas exhaust pipe of a substrate processing apparatus (not shown) (not shown), the introduction of the processing chamber atmosphere in the trap body b through the gas exhaust pipe of a substrate processing apparatus through the inlet section c The atmosphere in the processing chamber swirls in the gas path e along the filter wall a, and passes through the filter wall a arranged in a spiral shape in the radial direction by damming every round by a baffle plate to the downstream part. To reach.
Thus, in the conventional trap apparatus T _R, by processing chamber atmosphere to multiple passes through the filter wall a, unreacted components in the process chamber atmosphere, recovery components such as residual components are captured, cleaned gas Is discharged from the outlet part d. Further, the gas discharged from the outlet part d is rendered harmless by a downstream abatement device (not shown).

As described above, the conventional trap apparatus captures a collected component (hereinafter, also simply referred to as a collected component) such as residual components and reaction products in the processing chamber atmosphere as a layered solid component on the filter wall. In order to improve the capture performance, there is a problem that it is necessary to wait for the development of a high-performance filter material.
For this reason, considering the mechanism by which the recovered component is captured by the filter wall, first, the core of the recovered component is formed on the entire surface of the filter wall. It has been found that the growth of the gas increases in proportion to the pressure in the gas path.
Therefore, we made a prototype of a new trap device in which a demister made of wool of metal strands or a net-plate-like member was installed as a gas flow collision member in the gas path part, and used the atmospheric flow in the processing chamber introduced from the inlet part as the gas flow collision member. It was found that when the collision was attenuated, the pressure in the gas path portion increased, and the amount of recovered components captured was significantly improved compared to the case where no gas flow collision member was provided.
However, when the gas flow collision member is provided in this way, back pressure and turbulence due to an increase in pressure affect the inlet portion, and when the operation is performed for a long time, the inlet portion is clogged with recovered components. There's a problem. In other words, if a gas flow collision member is provided in the gas path, back pressure and turbulence in the gas path will affect the inlet part, and as a result, the environment in the inlet part will be recovered components such as residual components and reaction products. It is considered that an environment in which nuclei are likely to be generated and that nuclei are likely to adhere is likely.
Further, in the maintenance of the inlet portion, since the inlet portion is welded to the trap body, the entire trap body has to be cleaned, and there is a problem that much time must be spent.
Therefore, in the trap device, there is a problem to be solved in order to deal with the clogging of the inlet portion, and the present invention aims to solve this problem.

  The first means includes a processing chamber for processing the substrate, a heating means for heating the substrate, a supply system for supplying a desired gas to the processing chamber, an exhaust system for exhausting the atmosphere in the processing chamber, A trap device provided in the exhaust system for solidifying and capturing the gas exhausted from the processing chamber, provided in a trap body, an inlet connected to the trap body, and a gas path part of the trap body And a trap device having a gas flow impinging member, and an inner tube that can be taken out is provided inside the inlet portion.

  When the atmospheric gas in the processing chamber is introduced into the gas passage through the exhaust system, and the atmospheric flow in the processing chamber collides with the gas flow collision member, the environment in the gas passage becomes the core of the recovered component due to the pressure increase or recovery in the gas passage. It is easy to do and changes to an environment where the nucleus grows easily. The environment inside the inner tube is changed to an environment in which the nuclei of the recovered components are easily formed and the nuclei are easy to grow due to the influence of back pressure and disturbance due to the collision. For this reason, the recovered components are captured by both the inner pipe and the gas path. When the inner pipe is clogged with the recovered component, the inner pipe is taken out from the inlet portion and replaced. When reaching the capture capacity of the gas passage portion, maintenance such as cleaning is performed on the gas passage portion. Since the inner tube is smaller than the inlet portion, the replacement work is completed in a short time.

A second invention is a trap device provided in an exhaust system of a substrate processing apparatus, wherein a trap body, an inlet connected to the trap body, a gas flow collision member provided in a gas path portion of the trap body, , And an inner tube that can be taken out is provided inside the inlet portion.
When such a trap apparatus is attached to the substrate processing apparatus, most of the recovered components can be captured.

  According to the present invention, the trapping capability of the trap device can be improved and the trapping capability can be secured by exchanging the inner tube.

  First, a film forming process using an ALD method, which is one of the CVD methods, will be briefly described as an example of a process processing on a substrate such as a wafer performed in the embodiment of the present invention.

In the ALD method, under one film formation condition (temperature, time, etc.), two kinds (or more) of raw material gases used for film formation are alternately supplied onto the substrate one by one, and one atomic layer unit. In this method, the film is adsorbed by using a surface reaction to form a film.
That is, for the chemical reaction used, for example, in the case of forming a SiN (silicon nitride) film, DCS (SiH ₂ Cl ₂ , dichlorosilane) and NH ₃ (ammonia) are used in the ALD method.
These reaction gases enable high-quality film formation at a low temperature of 300 to 600 ° C. Further, the gas supply alternately supplies a plurality of types of reactive gases one by one.
And film thickness control is controlled by the cycle number of reactive gas supply. (For example, assuming that the film formation rate is 1 mm / cycle, the process is performed 20 cycles when a film of 20 mm is formed.)

Hereinafter, an embodiment of a substrate processing furnace according to a substrate processing system of the present invention will be described with reference to the accompanying drawings. FIG. 1 is a schematic configuration diagram of a vertical substrate processing furnace of the substrate processing system according to the present embodiment, and shows a processing furnace part in a vertical section. FIG. 2 is a schematic configuration diagram of a vertical substrate processing furnace of the substrate processing system according to the present embodiment, and shows a processing chamber portion in a cross section.
A reaction tube 203 is provided inside a heater 207 as a heating means as a reaction vessel for processing the wafer 200 as a substrate, and an opening at the lower end of the reaction tube 203 is an airtight member by a seal cap 219 as a lid. The substrate processing chamber 201 is formed by at least the heater 207, the reaction tube 203, and the seal cap 219.
A boat 217 as a substrate holding means is erected on the seal cap 219 via a quartz cap 218. The quartz cap 218 is a holding body that holds the boat 217.
The boat 217 is inserted into the substrate processing chamber 201. A plurality of wafers 200 to be batch-processed are stacked on the boat 217 in a horizontal posture in multiple stages in the tube axis direction.
The heater 207 heats the wafer 200 inserted into the substrate processing chamber 201 to a predetermined temperature.

The substrate processing chamber 201 is provided with two gas supply pipes 232a and 232b as supply systems for supplying a plurality of types, here two types of gases.
Here, a buffer chamber 237 formed in a substrate processing chamber 201, which will be described later, from the first gas supply pipe 232a via a first mass flow controller 241a as a flow rate control means and a first valve 243a as an on-off valve. The reaction gas is supplied to the substrate processing chamber 201 via the second gas supply pipe 232b, a second mass flow controller 241b as a flow rate control means, a second valve 243b as an on-off valve, a gas reservoir 247, and A reactive gas is supplied to the substrate processing chamber 201 via a third valve 243c, which is an on-off valve, and further via a gas supply unit 249 described later.

The substrate processing chamber 201 is connected to a vacuum pump 246 which is an exhaust means through a fourth valve 243d by a gas exhaust pipe 231 as a gas exhaust system for exhausting gas, and is evacuated.
The fourth valve 243d is an open / close valve that can open and close the valve to stop evacuation / evacuation of the substrate processing chamber 201, and further adjust the valve opening to adjust the pressure. A trap device 100 (described later) is provided in the middle of the gas exhaust pipe 231.

The arc-shaped space between the inner wall of the reaction tube 203 constituting the substrate processing chamber 201 and the wafer 200 has a gas dispersion space along the loading direction of the wafer 200 on the inner wall above the lower part of the reaction tube 203. A buffer chamber 237 is provided, and a first gas supply hole 248a, which is a supply hole for supplying gas, is provided at an end of the wall adjacent to the wafer 200 of the buffer chamber 237.
The first gas supply hole 248 a opens toward the center of the reaction tube 203. The first gas supply holes 248a have the same opening area from the lower part to the upper part, and are provided at the same opening pitch.

At the end of the buffer chamber 237 opposite to the end where the first gas supply hole 248a is provided, a nozzle 233 is also disposed along the stacking direction of the wafer 200 from the bottom to the top of the reaction tube 203. Is done. The nozzle 233 is provided with a second gas supply hole 248b which is a supply hole for supplying a plurality of gases.
When the differential pressure between the buffer chamber 237 and the substrate processing chamber 201 is small, the second gas supply hole 248b may have the same opening area and the same opening pitch from the upstream side to the downstream side. When the pressure is large, the opening area is increased from the upstream side toward the downstream side, or the opening pitch is reduced.

  In the present embodiment, by adjusting the opening area and the opening pitch of the second gas supply holes 248b from the upstream side to the downstream side, first, there is a difference in gas flow velocity from each of the second gas supply holes 248b. The gas whose flow rate is almost the same is ejected. Then, the gas ejected from each of the second gas supply holes 248b is ejected into the buffer chamber 237 and once introduced, and the flow velocity difference of the gas is made uniform.

  That is, in the buffer chamber 237, the gas ejected from each second gas supply hole 248b is ejected from the first gas supply hole 248a to the substrate processing chamber 201 after the particle velocity of each gas is relaxed in the buffer chamber 237. . During this time, the gas ejected from each of the second gas supply holes 248b could be a gas having a uniform flow rate and flow velocity when ejected from each of the first gas supply holes 248a.

  Further, in the buffer chamber 237, the first rod-shaped electrode 269 that is a first electrode having an elongated structure and the second rod-shaped electrode 270 that is a second electrode are electrodes that are protective tubes that protect the electrode from the top to the bottom. One of the first rod-shaped electrode 269 and the second rod-shaped electrode 270 is connected to a high-frequency power source 273 via a matching device 272, and the other is grounded as a reference potential. It is connected to the. As a result, plasma is generated in the plasma generation region 224 between the first rod-shaped electrode 269 and the second rod-shaped electrode 270.

  The electrode protection tube 275 has a structure in which each of the first rod-shaped electrode 269 and the second rod-shaped electrode 270 can be inserted into the buffer chamber 237 while being isolated from the atmosphere of the buffer chamber 237. Here, if the inside of the electrode protection tube 275 has the same atmosphere as the outside air (atmosphere), the first rod-shaped electrode 269 and the second rod-shaped electrode 270 inserted into the electrode protection tube 275 are oxidized by the heating of the heater 207. Will be. Therefore, the inside of the electrode protection tube 275 is filled or purged with an inert gas such as nitrogen to keep the oxygen concentration sufficiently low to prevent oxidation of the first rod-shaped electrode 269 or the second rod-shaped electrode 270. A gas purge mechanism is provided.

  Further, a gas supply unit 249 is provided on the inner wall of the reaction tube 203 that is rotated about 120 ° from the position of the first gas supply hole 248a. The gas supply unit 249 is a supply unit that shares the gas supply species with the buffer chamber 237 when a plurality of types of gases are alternately supplied to the wafer 200 one by one in film formation by the ALD method.

  Similarly to the buffer chamber 237, the gas supply unit 249 also has third gas supply holes 248c, which are supply holes for supplying gas at the same pitch, at a position adjacent to the wafer 200, and a second gas supply pipe 232b at the bottom. Is connected.

  When the differential pressure between the buffer chamber 237 and the substrate processing chamber 201 is small, the third gas supply hole 248c may have the same opening area and the same opening pitch from the upstream side to the downstream side. When the pressure is large, it is preferable to increase the opening area or reduce the opening pitch from the upstream side toward the downstream side.

A boat 217 for mounting a plurality of wafers 200 in multiple stages at the same interval is provided at the center of the reaction tube 203. This boat 217 is a reaction tube by a boat elevator mechanism (not shown) not shown. 203 can be entered and exited.
In order to improve the uniformity of processing, a boat rotation mechanism 267 that is a rotation means for rotating the boat 217 is provided. By rotating the boat rotation mechanism 267, the boat 217 held by the quartz cap 218 is removed. It is designed to rotate.

  The controller 121 as a control means includes first and second mass flow controllers 241a and 241b, first to fourth valves 243a, 243b, 243c, and 243d, a heater 207, a vacuum pump 246, a boat rotation mechanism 267, and are omitted in the drawing. Connected to the boat lifting mechanism, the high frequency power supply 273, and the matching unit 272, the flow rate adjustment of the first and second mass flow controllers 241a, 241b, the opening / closing operation of the first to third valves 243a, 243b, 243c, 4 valve 243d opening and closing and pressure adjustment operation, heater 207 temperature adjustment, vacuum pump 246 activation / deactivation, boat rotation mechanism 267 rotation speed adjustment, boat elevating mechanism elevating operation control, high frequency power supply 273 power supply control, Impedance control is performed by the matching unit 272.

Next, an example of film formation by the ALD method will be described using an example of forming an SiN film using DCS and NH ₃ gas.

  First, a wafer 200 to be deposited is loaded into a boat 217 and loaded into the substrate processing chamber 201. After carrying in, the following three steps are sequentially executed.

[Step 1]
In Step 1, NH ₃ gas that requires plasma excitation and DCS gas that does not require plasma excitation are caused to flow in parallel. First, the first valve 243a provided in the first gas supply pipe 232a and the fourth valve 243d provided in the gas exhaust pipe 231 are both opened, and the first mass flow controller 241a is operated from the first gas supply pipe 232a. The NH ₃ gas whose flow rate has been adjusted is jetted from the second gas supply hole 248 b of the nozzle 233 to the buffer chamber 237, and the high frequency power supply 273 is passed through the matching unit 272 between the first rod-shaped electrode 269 and the second rod-shaped electrode 270. Then, high frequency power is applied to plasma: excite NH ₃ and exhaust from the gas exhaust pipe 231 while being supplied to the substrate processing chamber 201 as active species.
When flowing NH ₃ gas as an active species by plasma excitation, the pressure in the substrate processing chamber 201 is set to 10 to 100 Pa by appropriately adjusting the fourth valve 243d.
The supply flow rate of NH ₃ controlled by the first mass flow controller 241a is 1000 to 10,000 sccm. The time for which the wafer 200 is exposed to the active species obtained by plasma excitation of NH ₃ is 2 to 120 seconds. The temperature of the heater 207 at this time is set so that the wafer 200 has a temperature of 300 to 600 ° C. Since NH ₃ has a high reaction temperature, it does not react at the above-mentioned wafer temperature. Therefore, the NH ₃ is flowed as an active species by plasma excitation, so that the wafer temperature can be kept in a set low temperature range.

When this NH ₃ is supplied as an active species by plasma excitation, the second valve 243b on the upstream side of the second gas supply pipe 232b is opened, the third valve 243c on the downstream side is closed, and the DCS Also let it flow. As a result, DCS is stored in a gas reservoir 247 provided between the second and third valves 243b and 243c. At this time, the gas flowing into the substrate processing chamber 201 is an active species obtained by plasma-exciting NH ₃ , and DCS does not exist. Therefore, NH ₃ does not cause a gas phase reaction, NH ₃ became active species excited by plasma is base film and the surface reaction on the wafer 200.

[Step 2]
In Step 2, the first valve 243a of the first gas supply pipe 232a is closed to stop the supply of NH ₃ , but the supply to the gas reservoir 247 is continued. When a predetermined pressure and a predetermined amount of DCS accumulate in the gas reservoir 247, the second valve 243b on the upstream side is also closed, and the DCS is confined in the gas reservoir 247.
Further, the fourth valve 243 d of the gas exhaust pipe 231 is kept open, and the substrate processing chamber 201 is exhausted to 20 Pa or less by the vacuum pump 246, and residual NH ₃ is removed from the substrate processing chamber 201. At this time, if an inert gas such as N ₂ is supplied to the substrate processing chamber 201, the effect of eliminating residual NH ₃ is further enhanced.
DCS is stored in the gas reservoir 247 so that the pressure is 20000 Pa or more.
In addition, the apparatus is configured such that the conductance between the gas reservoir 247 and the substrate processing chamber 201 is 1.5 × 10 ⁻³ m ³ / s or more. Considering the ratio between the volume of the reaction tube 203 and the volume of the necessary gas reservoir 247, the volume of the reaction tube 203 is preferably 100 to 300 cc when the volume of the reaction tube 203 is 100 l (liter). The gas reservoir 247 is preferably 1/1000 to 3/1000 times the reaction chamber volume.

[Step 3]
In step 3, when the exhaust of the substrate processing chamber 201 is finished, the fourth valve 243d of the gas exhaust pipe 231 is closed to stop the exhaust. The third valve 243c on the downstream side of the second gas supply pipe 232b is opened. As a result, the DCS stored in the gas reservoir 247 is supplied to the substrate processing chamber 201 all at once. At this time, since the fourth valve 243d of the gas exhaust pipe 231 is closed, the pressure in the substrate processing chamber 201 is rapidly increased to about 931 Pa (7 Torr).
The time for supplying DCS was set to 2 to 4 seconds, and then the time for exposure to the increased pressure atmosphere was set to 2 to 4 seconds, for a total of 6 seconds. The wafer temperature at this time is 300 to 600 ° C. as in the case of supplying NH ₃ . By supplying DCS, NH ₃ and DCS on the base film react with each other to form a SiN film on the wafer 200.
After the film formation, the third valve 243c is closed, the fourth valve 243d is opened, and the substrate processing chamber 201 is evacuated to remove the remaining gas after contributing to the film formation of DCS. At this time, if an inert gas such as N ₂ is supplied to the substrate processing chamber 201, the effect of removing the remaining gas that has contributed to the deposition of DCS from the substrate processing chamber 201 is enhanced. Also, the second valve 243b is opened to start supplying DCS to the gas reservoir 247.

  Steps 1 to 3 are defined as one cycle, and a SiN film having a predetermined thickness is formed on the wafer 200 by repeating this cycle a plurality of times.

  In the ALD apparatus, the gas is adsorbed on the surface of the base film. The amount of gas adsorption is proportional to the gas pressure and the gas exposure time. Therefore, in order to adsorb a desired amount of gas in a short time, it is necessary to increase the gas pressure in a short time. In this respect, in this embodiment, since the DCS stored in the gas reservoir 247 is instantaneously supplied after the fourth valve 243d is closed, the pressure of the DCS in the substrate processing chamber 201 is rapidly increased. The desired amount of gas can be adsorbed instantaneously.

Further, in the present embodiment, while DCS is stored in the gas reservoir 247, NH ₃ gas, which is a necessary step in the ALD method, is plasma-excited to supply active species and exhaust the substrate processing chamber 201. As a result, no special steps are required to store the DCS. Moreover, since DCS is flowed after exhausting the inside of the substrate processing chamber 201 and removing the NH ₃ gas, both do not react on the way to the wafer 200. The supplied DCS can be effectively reacted only with NH ₃ adsorbed on the wafer 200.

FIG. 3 shows the substrate processing apparatus (see FIGS. 1 and 2) as a vertical CVD system for performing CVD processing by placing wafers 200 having a diameter of 300 mm, which are substrates to be processed, on quartz reaction tubes 203 in multiple stages. The state of incorporating is shown.
The cassette 32 containing the wafer 200 is exchanged between the I / O stage 33 installed on the front surface of the system and the outside of the apparatus. A cassette loader 35 is installed inside the I / O stage 33 so that the cassette 32 on the I / O stage 33 can be conveyed to the cassette shelf 34. A wafer transfer machine 38 for transferring the wafers 200 to the boat 217 is arranged inside the cassette shelf 34 so that the wafers 200 can be transferred between the cassette 32 of the cassette shelf 34 and the quartz boat 217. It has become.
Since the cassette 32 according to the present embodiment can accommodate 25 wafers 200 and the boat 217 is loaded with 100 wafers 200, the transfer of the wafer transfer device 38 is repeated several times.
The boat 217 is installed in the boat elevator 36, and is loaded into the reaction tube 203 as the boat 217 is lifted by a lifting mechanism (not shown) of the boat elevator 36. After the boat 217 is inserted into the reaction tube 203, the seal cap 219 serving as a base attached to the boat elevator 36 below the boat 217 is in close contact with the reaction tube 203 via an O-ring 220 that is an airtight member. Is retained.
The gas exhaust pipe 231 is provided with the trap device 100 according to the present embodiment on the upstream side of the vacuum pump 246 (see FIG. 3), and the abatement device 40 is provided on the downstream side. The trap device 100 may be installed between the vacuum pump 246 and the abatement device 40.

When performing the film forming process by the CVD system, first, the cassette 32 loaded with the wafer 200 is set on the I / O stage 33. When the cassette 32 is set on the I / O stage 33, the cassette 32 is sequentially conveyed to the cassette shelf 34 by the cassette loader 35.
When the transfer of the wafer 200 to the boat 217 is completed, the boat elevator 36 is operated, and the boat 217 is inserted into the reaction tube 203 by the ascent of the boat 217.
When the insertion of the boat 217 is completed, the reaction tube 203 is closed by the seal cap 219 at the bottom of the boat 217 and the airtightness is maintained.
While maintaining this state, a reactive gas for CVD at a constant flow rate is supplied into the reaction tube 203, and the pressure in the reaction tube 203 is maintained at a constant pressure. At this time, the reaction tube 203 and the internal wafer 200 are held at a predetermined temperature by the heater 207.

As described above, while maintaining the temperature in the reaction tube 203 at, for example, 750 ° C. and maintaining the pressure in the reaction tube 203 at, for example, 1 Torr, SiH ₂ Cl ₂ (dichlorosilane) and NH ₃ (ammonia Are alternately supplied, a SiN _x film (nitride film) is formed on the surface of the wafer 200.
In addition, as deposits such as residual components, unreacted NH ₃ exhausted from the reaction tube 203 by an inert gas (residual component) and DCS exhausted from the reaction tube 203 (SiH ₂ Cl ₂ , dichlorosilane) Corresponds to the unreacted part (residual part).

FIG. 4A is an explanatory view of the trap device 100 with the upper lid taken out, and FIG. 4B is a cross-sectional view taken along line xx of FIG. FIG. 5 is a cross-sectional view of the trap device 100 cut along the axial direction of the inlet portion 103.
As shown in FIG. 4A, the trap device 100 includes a filter wall 101 that captures recovered components such as unreacted components and residual components from the processing chamber atmosphere (exhaust from the substrate processing chamber 201), and the filter. The trap body (casing) 102 that houses the wall 101, the inlet portion 103 for introducing the processing chamber atmosphere from the gas exhaust pipe 231 (exhaust system) into the trap body 102, and the filter wall 101 captured the recovered components. And an outlet portion 108 for exhausting the atmosphere in the subsequent processing chamber to the gas exhaust pipe 231. Although not shown in detail in FIG. 4, the filter wall 101 is formed of a filter that captures a recovery component in the atmosphere in the processing chamber, and is formed into a spiral shape and then incorporated in the trap body 102. When the spiral filter wall 101 is built in the trap main body 102, the trap main body 102 has a gas path portion 105 that captures recovered components such as unreacted components and residual components from the atmosphere in the processing chamber as a layered solid component. Is formed. In addition, a baffle plate (not shown) is arranged in the gas path portion 105 every round, and the baffle plate blocks the flow of the atmospheric flow in the processing chamber every round, and the inlet portion 103 to the outlet portion 108. A spiraling flow is formed.
The trap body 102 is provided with a communication path 106 penetrating in the thickness direction, and the inlet portion 103 is airtightly attached to the trap body 102 by welding with the outlet portion inserted into the communication path 106. The outlet portion 108 communicates with the downstream portion of the gas passage portion 105 and extends through the end wall of the trap body 102 from the inside to the outside to extend to the outside by a predetermined length.

  As shown in FIGS. 4B and 5, an inner tube 109 is removably inserted into the inlet portion 103 and communicates with the upstream portion of the spiral gas path portion 105. The end portions of the inner pipe 109 and the inlet portion 103 are respectively provided with flanges, and are connected to the flanges of the gas exhaust pipe 231 (see FIG. 3) via a joint of a clamp joint. Further, the inner tube 109 and the inlet portion 103 are made of a metal material having high corrosion resistance, for example, stainless steel.

  In the gas path portion 105, a mesh plate-like demister 107 in which metal wires are braided regularly or irregularly is installed as a gas flow collision member. The demister 107 is disposed over the entire length of the gas path portion 105, and is attenuated by colliding with the atmosphere in the processing chamber introduced into the gas path portion 105 through the inner pipe 109.

When the trap apparatus 100 is inserted into the gas exhaust pipe 231 of the substrate processing system as shown in FIG. 3 and the processing chamber atmosphere of the substrate processing chamber 203 is introduced into the gas path portion 105 through the inner pipe 109, FIG. As shown, the atmospheric flow in the processing chamber collides with the demister 107 in the gas path portion 105 and attenuates, and the pressure of the atmospheric flow in the processing chamber increases or recovers. For this reason, the pressure in the gas path part 105 rises, and the environment in the gas path part 105 tends to generate nuclei of recovered components in the processing chamber atmosphere, that is, residual components and reaction by-products. It becomes an environment that is easy to grow. The environment in the inner pipe 109 is likely to generate nuclei of recovered components in the processing chamber atmosphere due to the influence of disturbance due to the collision between the back pressure and the demister 107 due to an increase in pressure in the gas path portion 105, It becomes an environment that is easy to grow. Therefore, the recovered components in the processing chamber atmosphere are captured by the inner surface of the inner tube 109, the surface of the demister 107, and the surface of the filter wall 101, and the downstream side of the vacuum pump 246 and the downstream side of the vacuum pump 246. The amount of adhesion of the abatement device 40 to the valves such as the three-way valve is greatly reduced.
When the recovered component is captured and the inner tube 109 is blocked by the recovered component, the inner tube 109 is removed from the inlet portion 103 and replaced. When the capture capacity of the demister 107 and the filter wall 101 is reached, the demister 107 and the filter wall 101 are maintained. When replacing the inner tube 109, the inner tube 109 is smaller than the inlet portion 103, so that the replacement time is shortened.

  Note that the demister 107 is not limited to the demister 107 in which the metal strands are bundled into a plate shape, but may be made of coarse metal wire wool. Further, the surface of the filter wall 101 may be provided with protrusions or flocks due to fluffing or irregularities, or may be used as a gas flow collision member. It is good.

Alternatively, the filter wall 101 itself may be used as a gas flow collision member by narrowing the flow path section of the gas path portion 105 stepwise from the upstream side toward the downstream side.
In this way, as in the case where the demister 107 is installed, the atmospheric flow in the processing chamber collides with the gas flow collision member and is attenuated, so that the pressure in the gas path portion 105 is restored. The trapped amount of the inner pipe 109 and the gas path portion 105 as a whole increases.

Furthermore, in order to increase the collection capability of the gas path portion 105 by the filter wall 101, at least the flow path cross section of the gas path portion 105 excluding the gas path portion 105 around the connection portion between the inlet portion 103 and the trap body 102, The entire filter wall 101 is made into a gas flow collision member by narrowing in the upstream side and gradually from the upstream side to the downstream side, and the capture performance for the recovered component is improved by the collision with the filter wall 101 and the increase in pipe resistance. You may do it.
In this way, as in the case where the demister 107 is installed, the atmospheric flow in the processing chamber collides with the gas flow collision member and is attenuated, so that the pressure in the gas path portion 105 is restored. The trapped amount of the inner pipe 109 and the gas path portion 105 as a whole increases.

In the description of the present embodiment, the inner pipe 109 can be taken out from the trap device 100 provided with the gas flow collision member. However, the inner pipe 109 is taken out into the inlet portion 103 even when the gas flow collision member is not installed. The ability to capture recovered components may be improved by providing and replacing them as possible.
Further, in the present embodiment, a system in which the trap apparatus 100 is incorporated in a vertical CVD processing apparatus is illustrated, but a system in which a horizontal processing apparatus or a single wafer processing apparatus is assembled may be used. Further, the trap device 100 according to the present invention can be applied to other processing devices that capture and purify particulate components from exhaust gas.
As described above, the present invention can be variously modified, and the present invention naturally extends to the modified invention.

BRIEF DESCRIPTION OF THE DRAWINGS It is a schematic block diagram of the vertical type substrate processing furnace of the substrate processing system concerning embodiment of this invention, and is the figure which showed the processing furnace part with the longitudinal cross-section. It is a schematic structure figure of a vertical type substrate processing furnace of a substrate processing system concerning an embodiment of the invention, and is a figure showing a processing furnace part in a cross section. It is explanatory drawing which shows the substrate processing system incorporating the substrate processing furnace concerning embodiment of this invention. It is explanatory drawing which shows the structure of the trap apparatus concerning one Embodiment of this invention. It is explanatory drawing which cut | disconnected the trap apparatus along the axial direction of an inlet part. It is explanatory drawing which shows the structure of the conventional exhaust trap apparatus.

Explanation of symbols

DESCRIPTION OF SYMBOLS 100 Trap apparatus 101 Filter wall 102 Trap main body 103 Inlet part 105 Gas path part 106 Communication path 107 Demister (gas flow collision member)
109 Inner tube 201 Substrate processing chamber 207 Heater (heating means)
231 Gas exhaust pipe (exhaust system)
232a First gas supply pipe (gas supply system)
232b Second gas supply pipe (gas supply system)

Claims (1)

A processing chamber for processing the substrate;
Heating means for heating the substrate;
A supply system for supplying a desired gas to the processing chamber;
An exhaust system for exhausting the atmosphere in the processing chamber;
A trap device provided in the exhaust system that solidifies and captures gas exhausted from the processing chamber, the trap body, an inlet connected to the trap body, and a gas path portion of the trap body A gas flow collision member provided in the
A substrate processing system, wherein an inner tube that can be taken out is provided inside the inlet portion.

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