DE602007008961D1 - Lichthärtbare Harzzusammensetzung und Verfahren zur Herstellung einer Struktur - Google Patents

Lichthärtbare Harzzusammensetzung und Verfahren zur Herstellung einer Struktur

Info

Publication number
DE602007008961D1
DE602007008961D1 DE602007008961T DE602007008961T DE602007008961D1 DE 602007008961 D1 DE602007008961 D1 DE 602007008961D1 DE 602007008961 T DE602007008961 T DE 602007008961T DE 602007008961 T DE602007008961 T DE 602007008961T DE 602007008961 D1 DE602007008961 D1 DE 602007008961D1
Authority
DE
Germany
Prior art keywords
producing
resin composition
photocurable resin
photocurable
composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602007008961T
Other languages
English (en)
Inventor
Masahiko Ogino
Makoto Kaji
Hanako Yori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Corp
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Publication of DE602007008961D1 publication Critical patent/DE602007008961D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F2/00—Processes of polymerisation
    • C08F2/46—Polymerisation initiated by wave energy or particle radiation
    • C08F2/48—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/12—Esters of monohydric alcohols or phenols
    • C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
    • C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
    • C08F220/1805—C5-(meth)acrylate, e.g. pentyl (meth)acrylate
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/12—Esters of monohydric alcohols or phenols
    • C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
    • C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
    • C08F220/1807—C7-(meth)acrylate, e.g. heptyl (meth)acrylate or benzyl (meth)acrylate
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F222/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical and containing at least one other carboxyl radical in the molecule; Salts, anhydrides, esters, amides, imides, or nitriles thereof
    • C08F222/10—Esters
    • C08F222/1006—Esters of polyhydric alcohols or polyhydric phenols
    • C08F222/102—Esters of polyhydric alcohols or polyhydric phenols of dialcohols, e.g. ethylene glycol di(meth)acrylate or 1,4-butanediol dimethacrylate
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D4/00—Coating compositions, e.g. paints, varnishes or lacquers, based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; Coating compositions, based on monomers of macromolecular compounds of groups C09D183/00 - C09D183/16
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Medicinal Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Polymers & Plastics (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Wood Science & Technology (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
DE602007008961T 2006-01-12 2007-01-11 Lichthärtbare Harzzusammensetzung und Verfahren zur Herstellung einer Struktur Active DE602007008961D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006004755A JP4929722B2 (ja) 2006-01-12 2006-01-12 光硬化型ナノプリント用レジスト材及びパターン形成法

Publications (1)

Publication Number Publication Date
DE602007008961D1 true DE602007008961D1 (de) 2010-10-21

Family

ID=37847079

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602007008961T Active DE602007008961D1 (de) 2006-01-12 2007-01-11 Lichthärtbare Harzzusammensetzung und Verfahren zur Herstellung einer Struktur

Country Status (5)

Country Link
US (1) US8288079B2 (de)
EP (1) EP1808447B1 (de)
JP (1) JP4929722B2 (de)
CN (1) CN101000462B (de)
DE (1) DE602007008961D1 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014084395A1 (en) * 2012-11-30 2014-06-05 Canon Kabushiki Kaisha Imprinting method and curable composition for imprinting

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JP4770354B2 (ja) * 2005-09-20 2011-09-14 日立化成工業株式会社 光硬化性樹脂組成物及びこれを用いたパターン形成方法
JP5117002B2 (ja) * 2006-07-10 2013-01-09 富士フイルム株式会社 光硬化性組成物およびそれを用いたパターン形成方法
TWI411875B (zh) * 2008-01-04 2013-10-11 Hon Hai Prec Ind Co Ltd 用於壓印製程之模仁製造方法
JP5243887B2 (ja) 2008-02-12 2013-07-24 富士フイルム株式会社 ナノインプリント用硬化性組成物およびパターン形成方法
JP5268384B2 (ja) * 2008-02-12 2013-08-21 富士フイルム株式会社 ナノインプリント用硬化性組成物およびパターン形成方法
JP5435879B2 (ja) * 2008-02-14 2014-03-05 株式会社ダイセル ナノインプリント用硬化性樹脂組成物
JP2010016149A (ja) * 2008-07-03 2010-01-21 Fujifilm Corp ナノインプリント用硬化性組成物、硬化物およびその製造方法、ならびに液晶表示装置用部材
JP5611519B2 (ja) * 2008-10-29 2014-10-22 富士フイルム株式会社 ナノインプリント用組成物、パターンおよびその形成方法
US8999221B2 (en) 2008-12-03 2015-04-07 Fujifilm Corporation Curable composition for imprints, patterning method and pattern
JP5968933B2 (ja) * 2008-12-03 2016-08-10 富士フイルム株式会社 インプリント用硬化性組成物、パターン形成方法およびパターン
JP2010186979A (ja) 2008-12-03 2010-08-26 Fujifilm Corp インプリント用硬化性組成物、パターン形成方法およびパターン
JP2010182758A (ja) * 2009-02-03 2010-08-19 Toyo Gosei Kogyo Kk 樹脂パターン形成用光硬化性組成物及びそれを用いたパターン形成方法
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JP2010218597A (ja) * 2009-03-13 2010-09-30 Toshiba Corp パターン転写用樹脂スタンパ、及びこれを用いた磁気記録媒体の製造方法
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US8829070B2 (en) 2009-08-31 2014-09-09 Kabushiki Kaisha Toshiba Ultraviolet-curable resin material for pattern transfer and magnetic recording medium manufacturing method using the same
JP2011060818A (ja) * 2009-09-07 2011-03-24 Fujifilm Corp インプリント用硬化性組成物、硬化物および硬化物の製造方法
JP2011066100A (ja) * 2009-09-16 2011-03-31 Bridgestone Corp 光硬化性転写シート、及びこれを用いた凹凸パターンの形成方法
JP5712003B2 (ja) * 2010-04-07 2015-05-07 富士フイルム株式会社 インプリント用硬化性組成物およびインプリント用重合性単量体の製造方法
JP6015937B2 (ja) * 2010-04-19 2016-10-26 日産化学工業株式会社 高耐擦傷性インプリント材料
US20130099423A1 (en) * 2010-07-02 2013-04-25 Tokuyama Corporation Photocurable composition for imprint and method for formation of pattern using the composition
KR101435139B1 (ko) * 2010-11-18 2014-09-02 주식회사 미뉴타텍 도광판 무늬형용 활성에너지선경화형 수지 조성물
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JP5498448B2 (ja) * 2011-07-21 2014-05-21 株式会社東芝 インプリント方法及びインプリントシステム
JP5806903B2 (ja) * 2011-09-30 2015-11-10 富士フイルム株式会社 ナノインプリント方法およびそれに用いられるレジスト組成物
CN102604454B (zh) * 2011-12-20 2014-04-02 上海大学 一种纳米压印光刻胶表面改性剂
CN104136471A (zh) * 2012-02-29 2014-11-05 出光兴产株式会社 （甲基）丙烯酸酯系组合物、树脂、以及成形体
JP5846974B2 (ja) 2012-03-13 2016-01-20 富士フイルム株式会社 光インプリント用硬化性組成物、パターン形成方法およびパターン
CN105378893B (zh) 2013-06-06 2017-09-01 Dic株式会社 压印用固化性组合物
JP2015088667A (ja) * 2013-10-31 2015-05-07 株式会社東芝 微細加工システム、微細加工装置、および微細加工方法
JP2017504686A (ja) 2014-01-07 2017-02-09 東洋合成工業株式会社 組成物および部品の製造方法
JP7118580B2 (ja) 2014-08-26 2022-08-16 キヤノン株式会社 光硬化性組成物、これを用いた硬化物パターンの製造方法、光学部品の製造方法、回路基板の製造方法、およびインプリント用モールドの製造方法
JP6324363B2 (ja) 2014-12-19 2018-05-16 キヤノン株式会社 インプリント用光硬化性組成物、これを用いた膜の製造方法、光学部品の製造方法、回路基板の製造方法、電子部品の製造方法
JP6632200B2 (ja) 2015-02-27 2020-01-22 キヤノン株式会社 パターンの形成方法、加工基板の製造方法、光学部品の製造方法、回路基板の製造方法、電子部品の製造方法
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US20170066208A1 (en) 2015-09-08 2017-03-09 Canon Kabushiki Kaisha Substrate pretreatment for reducing fill time in nanoimprint lithography
US10488753B2 (en) 2015-09-08 2019-11-26 Canon Kabushiki Kaisha Substrate pretreatment and etch uniformity in nanoimprint lithography
US10095106B2 (en) 2016-03-31 2018-10-09 Canon Kabushiki Kaisha Removing substrate pretreatment compositions in nanoimprint lithography
US10620539B2 (en) 2016-03-31 2020-04-14 Canon Kabushiki Kaisha Curing substrate pretreatment compositions in nanoimprint lithography
US10134588B2 (en) 2016-03-31 2018-11-20 Canon Kabushiki Kaisha Imprint resist and substrate pretreatment for reducing fill time in nanoimprint lithography
US10509313B2 (en) 2016-06-28 2019-12-17 Canon Kabushiki Kaisha Imprint resist with fluorinated photoinitiator and substrate pretreatment for reducing fill time in nanoimprint lithography
US10317793B2 (en) 2017-03-03 2019-06-11 Canon Kabushiki Kaisha Substrate pretreatment compositions for nanoimprint lithography
CN110737172B (zh) * 2017-07-07 2021-03-02 Tcl华星光电技术有限公司 Uv固化粉末光阻组合物及其制作方法、彩膜基板的制作方法
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014084395A1 (en) * 2012-11-30 2014-06-05 Canon Kabushiki Kaisha Imprinting method and curable composition for imprinting

Also Published As

Publication number Publication date
US8288079B2 (en) 2012-10-16
CN101000462A (zh) 2007-07-18
US20070160937A1 (en) 2007-07-12
EP1808447B1 (de) 2010-09-08
JP4929722B2 (ja) 2012-05-09
EP1808447A1 (de) 2007-07-18
CN101000462B (zh) 2014-05-28
JP2007186570A (ja) 2007-07-26

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