JP5435879B2 - ナノインプリント用硬化性樹脂組成物 - Google Patents
ナノインプリント用硬化性樹脂組成物 Download PDFInfo
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- JP5435879B2 JP5435879B2 JP2008033455A JP2008033455A JP5435879B2 JP 5435879 B2 JP5435879 B2 JP 5435879B2 JP 2008033455 A JP2008033455 A JP 2008033455A JP 2008033455 A JP2008033455 A JP 2008033455A JP 5435879 B2 JP5435879 B2 JP 5435879B2
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- 239000011342 resin composition Substances 0.000 title claims description 53
- 125000000524 functional group Chemical group 0.000 claims description 87
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- 239000000203 mixture Substances 0.000 claims description 53
- 238000000576 coating method Methods 0.000 claims description 40
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- 239000011248 coating agent Substances 0.000 claims description 39
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- 239000011230 binding agent Substances 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 31
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims description 23
- 125000001153 fluoro group Chemical group F* 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 17
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 16
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- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical class C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 8
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- ISAOCJYIOMOJEB-UHFFFAOYSA-N benzoin Chemical compound C=1C=CC=CC=1C(O)C(=O)C1=CC=CC=C1 ISAOCJYIOMOJEB-UHFFFAOYSA-N 0.000 description 5
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 5
- 125000000753 cycloalkyl group Chemical group 0.000 description 5
- 239000003822 epoxy resin Substances 0.000 description 5
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 5
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 5
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- 238000004528 spin coating Methods 0.000 description 5
- DTGKSKDOIYIVQL-WEDXCCLWSA-N (+)-borneol Chemical group C1C[C@@]2(C)[C@@H](O)C[C@@H]1C2(C)C DTGKSKDOIYIVQL-WEDXCCLWSA-N 0.000 description 4
- VYMRCJJQCHGDIW-UHFFFAOYSA-N 1-ethenoxybutan-2-ol Chemical compound CCC(O)COC=C VYMRCJJQCHGDIW-UHFFFAOYSA-N 0.000 description 4
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- VUIWJRYTWUGOOF-UHFFFAOYSA-N 2-ethenoxyethanol Chemical compound OCCOC=C VUIWJRYTWUGOOF-UHFFFAOYSA-N 0.000 description 4
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical class S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 4
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- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 4
- 125000003438 dodecyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 4
- VOZRXNHHFUQHIL-UHFFFAOYSA-N glycidyl methacrylate Chemical compound CC(=C)C(=O)OCC1CO1 VOZRXNHHFUQHIL-UHFFFAOYSA-N 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 4
- 150000002430 hydrocarbons Chemical group 0.000 description 4
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical class I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 4
- 150000002762 monocarboxylic acid derivatives Chemical group 0.000 description 4
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 4
- 239000003208 petroleum Substances 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
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- 230000007261 regionalization Effects 0.000 description 4
- 125000003808 silyl group Chemical group [H][Si]([H])([H])[*] 0.000 description 4
- LWNGJAHMBMVCJR-UHFFFAOYSA-N (2,3,4,5,6-pentafluorophenoxy)boronic acid Chemical compound OB(O)OC1=C(F)C(F)=C(F)C(F)=C1F LWNGJAHMBMVCJR-UHFFFAOYSA-N 0.000 description 3
- KWVGIHKZDCUPEU-UHFFFAOYSA-N 2,2-dimethoxy-2-phenylacetophenone Chemical compound C=1C=CC=CC=1C(OC)(OC)C(=O)C1=CC=CC=C1 KWVGIHKZDCUPEU-UHFFFAOYSA-N 0.000 description 3
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- 229930185605 Bisphenol Natural products 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 3
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical class C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 244000028419 Styrax benzoin Species 0.000 description 3
- 235000000126 Styrax benzoin Nutrition 0.000 description 3
- 235000008411 Sumatra benzointree Nutrition 0.000 description 3
- 229910010413 TiO 2 Inorganic materials 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 125000005073 adamantyl group Chemical group C12(CC3CC(CC(C1)C3)C2)* 0.000 description 3
- 125000003545 alkoxy group Chemical group 0.000 description 3
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- 125000002704 decyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 3
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- 125000005843 halogen group Chemical group 0.000 description 3
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 3
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- NFHFRUOZVGFOOS-UHFFFAOYSA-N palladium;triphenylphosphane Chemical compound [Pd].C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 NFHFRUOZVGFOOS-UHFFFAOYSA-N 0.000 description 3
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- QAEDZJGFFMLHHQ-UHFFFAOYSA-N trifluoroacetic anhydride Chemical class FC(F)(F)C(=O)OC(=O)C(F)(F)F QAEDZJGFFMLHHQ-UHFFFAOYSA-N 0.000 description 3
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- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 2
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- 125000001421 myristyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 125000001400 nonyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 125000002868 norbornyl group Chemical group C12(CCC(CC1)C2)* 0.000 description 2
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
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- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- 125000000913 palmityl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
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Classifications
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F2/00—Processes of polymerisation
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
- B29C59/02—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing
- B29C59/022—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing characterised by the disposition or the configuration, e.g. dimensions, of the embossments or the shaping tools therefor
- B29C2059/023—Microembossing
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- G—PHYSICS
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
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Description
反応性官能基が、水酸基、エポキシ基、ビニルエーテル基、オキセタニル基、又はラジカル重合性を有するビニル基からなる群から選択される少なくとも一つの官能基であり、
疎水性官能基が、フッ素原子含有基、脂環式炭化水素基、炭素数4以上の脂肪族炭化水素基からなる群から選択される少なくとも一つの官能基であり、
光硬化性樹脂組成物が、カチオン硬化性モノマーを含むカチオン硬化性組成物及び/又はラジカル重合性不飽和結合を有するモノマーを含むラジカル硬化性組成物であり、
疎水性官能基がフッ素原子含有基である化合物の場合、該化合物の反応性官能基がラジカル重合性を有するビニル基である化合物Aを含有し、硬化性モノマーとしてエポキシ化合物を含み、
疎水性官能基が炭素数4以上の脂肪族炭化水素基、反応性官能基が水酸基である化合物Aを含有する場合、硬化性モノマーとしてエポキシ化合物及びアクリル系モノマーを含むナノインプリント用光硬化性樹脂組成物である。
なお、本明細書では、上記発明のほか、硬化性モノマー、又は硬化性モノマーとバインダー樹脂とを含有するナノインプリント用光硬化性樹脂組成物であって、該硬化性モノマーとバインダー樹脂との総量100重量部に対して、同一分子骨格中に反応性官能基と疎水性官能基を有する化合物Aを0.001〜5重量部含有することを特徴とするナノインプリント用光硬化性樹脂組成物についても説明する。
(i) 反応性官能基が水酸基である化合物としては、炭素数2〜20のフッ素化アルコール、例えば、東ソー・エフテック社製の2,2,2−トリフルオロエタノール、セントラル硝子社製のヘキサフルオロ−2−プロパノール、ダイキン化学工業社製の2,2,3,3−テトラフルオロプロバノール、2,2,3,3,4,4,5,5−オクタフルオロペンタノール、旭硝子社製の2-パーフルオロアルキルエタノール、セントラル硝子社製の2,2−ビス(4−ヒドロキシフェニル)ヘキサフルオロプロパン等を挙げることができる。
(ii) 反応性官能基が、カチオン反応性を有するエポキシ基、ビニルエーテル基、オキセタニル基、アルコキシシラン基である化合物としては、旭硝子社製のパーフルオロプロピルビニルエーテル、東レ・ダウコーニング社製のFSシリーズ等を挙げる事ができる。また、トリフルオロ酢酸、トリフルオロ酢酸無水物の誘導体としてエポキシ基含有化合物も使用可能である。
(iii) 反応性官能基が、(メタ)アクリル基、ビニル基などのラジカル重合性を有するビニル基である化合物としては、共栄社製のパーフルオロアルキルエチルアクリレート(FA-108)、オムノバ・ソリューションズ・インコーポレーティッド社製PolyFox PFシリーズ等を挙げる事ができる。
(i) 反応性官能基が水酸基である化合物としては、東レダウコーニング社製のヒロドキシアルキル末端ジメチルシロキサンであるBYシリーズ等を挙げる事ができる。
(ii) 反応性官能基がカチオン反応性を有するエポキシ基、ビニルエーテル基、オキセタニル基である化合物としては、アルキルクロロシラン処理した活性水素基を有するエポキシ、ビニルエーテル、オキセタン化合物を使用することができる。例えば、ダイセル化学工業社製のエポキシ化テトラヒドロベンジルアルコール、丸善石油化学社製の2−ヒドロキシエチルビニルエーテル(HEVE)、ジエチレングリコールモノビニルエーテル(DEGV)、2−ヒドロキシブチルビニルエーテル(HBVE)、トリエチレングリコールジビニルエーテル、東亞合成社製の3−エチル−3−(メチロール)オキセタン等にトリアルキルクロロシランを反応させた化合物等がこれにあたる。
(iii) 反応性官能基が、(メタ)アクリル基、ビニル基などのラジカル重合性を有するビニル基である化合物としては、アルキルクロロシラン処理した活性水素基を有する(メタ)アクリレートを使用することができる。例えば、共栄社製の2−ヒドロエチル(メタ)アクリレート、4−ヒドロブチル(メタ)アクリレートにトリアルキルクロロシランを反応させた化合物等がこれにあたる。
(i) 反応性官能基が水酸基である化合物としては、水添ビスフェノール型の化合物等がこれにあたる。また、水酸基を持つアダマンタン等のいわゆるカルド樹脂と呼ばれる化合物も使用可能である。
(ii) 反応性官能基がカチオン反応性を有するエポキシ基、ビニルエーテル基、オキセタニル基である化合物としては、水添ビスフェノールA型グリシジルエーテルがこれにあたる。
(iii) 反応性官能基が、(メタ)アクリル基、ビニル基などのラジカル重合性を有するビニル基である化合物としては、ダイセル化学工業社製アダマンチル(メタ)アクリレート、ダイセルサイテック社製イソボルニル(メタ)アクリレート、日立化成工業社製ジシクロペンタニル(メタ)アクリレート等を挙げる事ができる。
(i) 反応性官能基が水酸基である化合物としては、炭素数4〜20のアルコール類、日信化学工業社製のアセチレン系アルコールのポリエーテル化合物であるサーフィノール、三井化学社製の4−メチル−1−ペンテン・α−オレフィン共重合物末端水酸基のTPXシリーズ等を挙げる事ができる。
(ii) 反応性官能基がカチオン反応性を有するエポキシ基、ビニルエーテル基、オキセタニル基である化合物としては、ダイセル化学工業社製の長鎖アルキル基を有するモノエポキシドであるAOEシリーズ等を挙げる事ができる。
(iii) 反応性官能基が、(メタ)アクリル基、ビニル基などのラジカル重合性を有するビニル基である化合物としては、長鎖アルキル基を有する(メタ)アクリレート等を挙げる事ができる。
化合物1は、下記一般式(1)
で表されるビシクロ環を有するエポキシ化合物である。
化合物2は、下記一般式(2)
で表されるカーボネート化合物系である。
で表される(メタ)アクリル酸をラクトン変成した化合物である。
で表される末端水酸基を酸無水物により酸変性させたラクトン変成物である。具体的には、ダイセルサイテック社製のβ-CEA、東亞合成社製のアロニックスM5300、ダイセル化学工業社製のプラクセルFAシリーズ等がこれにあたる。
で表されるボレート類(化合物5)であると、反応性が高くなり好ましい。前記ボレート類のより好ましい例としては、テトラキス(ペンタフルオロフェニル)ボレートが挙げられる。
SiU4 (6)
(式中、基Uは同一、または異なり、加水分解性基またはヒドロキシル基である)で表される化合物(化合物6)、および/または、下記式(7)
R41 aR42 bSiU(4-a-b) (7)
(式中、R41は非加水分解性基であり、R42は官能基を有する基であり、Uは上記の意味を有し、aおよびbは値0、1、2または3を有し、合計(a+b)は値1、2または3を有する)
で表される化合物(化合物7)などの重合性シラン、および/またはそれらから誘導された縮合物を添加する事ができる。
R43(U1)3Si (8)
(式中、R43は部分的にフッ素化またはペルフルオロ化されたC2〜C20−アルキルであり、U1はC1〜C3−アルコキシ、メチル、エチル基または塩素原子である)
で表されるフルオロシラン(化合物8)を含む。
好ましい基R43は、CF3CH2CH2、C2F5CH2CH2、C4F9CH2CH2、n-C6F13CH2CH2、n-C8F17CH2CH2、n-C10F21CH2CH2およびi-C3F7O-(CH2)3である。
(1)本発明の光硬化性樹脂組成物からなる被膜を支持体上に形成する工程、
(2)前記被膜に、微細構造化されたインプリントスタンプを用いてパターンを転写する工程、
(3)パターンが転写された被膜を硬化させる工程、及び
(4)インプリントスタンプを取り除いて、インプリントされた微細構造を得る工程
を含む、微細構成物の製造方法に関する。この微細構成物は、マイクロリソグラフィに好適に用いられる。
1)塗膜調製法
<Si基材>
Si基材として、ヘキサメチルジシラザンで前処理した4インチシリコンウェハを用いた。
<ナノインプリント用光硬化性樹脂組成物>
ナノインプリント用光硬化性樹脂組成物は、表1に示すように、同一分子骨格中に反応性官能基と疎水性官能基を有する化合物(A)、硬化性モノマー(B)、開始剤(C)、増感剤(D)、ナノスケール粒子(E)、バインダー樹脂(造膜助剤:F)、及び溶剤(G)を使用して、公知の方法により、スピンコータ中で調製した。表1中の各成分の具体的な化合物を以下に示す。
同一分子骨格中に反応性官能基と疎水性官能基を有する化合物:表2に示す。
硬化性モノマー:表3に示す。
開始剤
C-1:4−メチルフェニル[4−(1−メチルエチル)フェニルヨウドニウムテトラキス(ペンタフルオロフェニル)ボレート/ローデア製 PI2074/感放射性カチオン重合開始剤
C-2:2,2−ジメトキシ−1,2−ジフェニルエタン−1−オン/チバジャパン社製 Irgacure651/感放射性ラジカル重合開始剤
増感剤
D-1:ジブトキシアントラセン/川崎化成 DBA/AnthracureR/UVS-1331
ナノ粒子
E-1:フルオロシラン/R43(U1)3Si(化合物8)
バインダー樹脂
F-1:A400共重合体;CB1100;3,4−エポキシシクロヘキシルメタクリレート/ブチルアクリレート=1/1共重合物
溶剤
G-1:プロピレングリコールモノメチルエーテルアセテート/ダイセル化学社製 MMPGAC
<塗膜調製>
上記のシリコンウェハに、スピンコーティング(3000回転、30秒)により、上記のナノインプリント用組成物の塗膜を、それぞれ形成した。溶剤を使用したものについては、溶媒を除去するために、約95℃で5分間乾燥させた。乾燥後のdry塗膜の層厚は約500nmであった。
微細構造の標的基板上への転写およびインプリンティングは、インプリンティング装置(明昌機工社製NM−0401モデル)を用いて行った。このインプリンティング装置は、コンピュータで制御された試験器であり、装荷、緩和速度、加熱温度等をプログラムすることにより、規定された圧力を特定の時間維持することが可能である。また、付帯する高圧水銀燈により、UV放射線により光化学的に硬化が開始される。実施例1〜11、比較例1〜3では、上記で調製した塗膜に、表1に示した、プレス圧、プレス温度、プレス時間、及びUV露光量で、転写およびインプリンティングを行った。実施例1〜11、比較例1〜3では、200nmのライン&スペースのパターンを転写した。
実施例1〜11、比較例1〜3の樹脂組成物における微細加工について、塗布性、硬化収縮、及び微細構造パターンの形状について、以下に示す方法で評価を行った。その結果を表1に示した。
硬化性組成物をSiウエハ上にスピンコートした後の表面の状態を観察し、均一な塗膜形成の有無を観察した。下記の基準により評価し、結果を表1に示した。
○:均一な塗膜が得られた。
×:スピンコート後塗膜のはじきが観察された。
転写インプリントスタンプを取り除いた後に形成したパターンを、走査顕微鏡を用いて観察し、その外観を観察した。下記の基準により評価し、結果を表1に示した。
◎:パターンエッジ及びパターン端が矩形を保っていた。
○:パターンエッジ及びパターン端がやや婉曲していた。
△:パターンエッジ及びパターン端が婉曲していた。
×:両端のパターン面が収縮し、はがれが生じていた。
転写したパターンの残存部分を酸素のプラズマエッチングで除去した後、CHF3/O2(25:10(体積比))でドライエッチングしたSiウエハ上のパターンの形状を、走査顕微鏡を用いて確認した。下記の基準により評価し、結果を表1に示した。
○:パターンエッジの矩形を保っていた。
×:パターンエッジの矩形が崩れた。
実施例1−11、比較例1〜3の樹脂組成物について、転写インプリントスタンプとの剥離性を、以下のようにして評価した。その結果を表1に示した。
>=15N:○
<15N:×
として評価した。
<10N:○
>=10N:×
として評価した。
Claims (8)
- 硬化性モノマー、又は硬化性モノマーとバインダー樹脂とを含有するナノインプリント用光硬化性樹脂組成物であって、該硬化性モノマーとバインダー樹脂との総量100重量部に対して、同一分子骨格中に反応性官能基と疎水性官能基を有する化合物Aを0.001〜5重量部含有することを特徴とするナノインプリント用光硬化性樹脂組成物であって、
反応性官能基が、水酸基、エポキシ基、ビニルエーテル基、オキセタニル基、又はラジカル重合性を有するビニル基からなる群から選択される少なくとも一つの官能基であり、
疎水性官能基が、フッ素原子含有基、脂環式炭化水素基、炭素数4以上の脂肪族炭化水素基からなる群から選択される少なくとも一つの官能基であり、
光硬化性樹脂組成物が、カチオン硬化性モノマーを含むカチオン硬化性組成物及び/又はラジカル重合性不飽和結合を有するモノマーを含むラジカル硬化性組成物であり、
疎水性官能基がフッ素原子含有基である化合物の場合、該化合物の反応性官能基がラジカル重合性を有するビニル基である化合物Aを含有し、硬化性モノマーとしてエポキシ化合物を含み、
疎水性官能基が炭素数4以上の脂肪族炭化水素基、反応性官能基が水酸基である化合物Aを含有する場合、硬化性モノマーとしてエポキシ化合物及びアクリル系モノマーを含むナノインプリント用光硬化性樹脂組成物。 - 該カチオン硬化性モノマーがエポキシ化合物、ビニルエーテル化合物、オキセタン化合物、カーボネート化合物、ジチオカーボネート化合物からなる群から選ばれる少なくとも1種の化合物である請求項1記載のナノインプリント用光硬化性樹脂組成物。
- 硬化性モノマーが、アクリル系モノマーを含む請求項1又は2記載のナノインプリント用光硬化性樹脂組成物。
- 請求項1〜3の何れかの項に記載の光硬化性樹脂組成物を硬化して形成される硬化物。
- 請求項1〜3の何れかの項に記載の光硬化性樹脂組成物にナノインプリント加工を施して微細構造物を得る微細構造物の製造方法。
- (1)請求項1〜3の何れかの項に記載の光硬化性樹脂組成物からなる被膜を支持体上に形成する工程、
(2)前記被膜に、微細構造化されたインプリントスタンプを用いてパターンを転写する工程、
(3)パターンが転写された被膜を硬化させる工程、及び
(4)インプリントスタンプを取り除いて、インプリントされた微細構造を得る工程
を含む請求項5記載の微細構造物の製造方法。 - 請求項5または請求項6の何れかの項に記載の製造方法で得られる微細構造物。
- 半導体材料、フラットスクリーン、ホログラム、導波路、メディア用構造体、精密機械部品又はセンサである請求項7記載の微細構造物。
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US20120141738A1 (en) | 2012-06-07 |
TW200940566A (en) | 2009-10-01 |
KR101568892B1 (ko) | 2015-11-12 |
JP2009191172A (ja) | 2009-08-27 |
EP2246371A4 (en) | 2012-06-06 |
CN101984756A (zh) | 2011-03-09 |
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