TWI736735B - 基板處理方法以及基板處理裝置 - Google Patents

基板處理方法以及基板處理裝置 Download PDF

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Publication number: TWI736735B
Authority: TW; Taiwan
Prior art keywords: substrate; film; liquid; thickness; rotation
Prior art date: 2017-02-09

Application number

TW107102053A

Other languages

English (en)

Chinese (zh)

Other versions

TW201834296A (zh

Inventor

樋口鮎美

岩晃久

Original Assignee

日商斯庫林集團股份有限公司

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2017-02-09

Filing date

2018-01-19

Publication date

2021-08-21

2018-01-19 Application filed by 日商斯庫林集團股份有限公司 filed Critical 日商斯庫林集團股份有限公司

2018-09-16 Publication of TW201834296A publication Critical patent/TW201834296A/zh

2021-08-21 Application granted granted Critical

2021-08-21 Publication of TWI736735B publication Critical patent/TWI736735B/zh

Links

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238000012545 processing Methods 0.000 title claims abstract description 111
238000003672 processing method Methods 0.000 title claims abstract description 11
239000007788 liquid Substances 0.000 claims abstract description 387
229910052751 metal Inorganic materials 0.000 claims abstract description 40
239000002184 metal Substances 0.000 claims abstract description 40
230000015572 biosynthetic process Effects 0.000 claims abstract description 5
KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 56
238000005259 measurement Methods 0.000 claims description 38
239000010949 copper Substances 0.000 claims description 27
238000005530 etching Methods 0.000 claims description 23
RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 13
229910052802 copper Inorganic materials 0.000 claims description 13
230000000452 restraining effect Effects 0.000 claims 1
239000007789 gas Substances 0.000 description 76
239000000126 substance Substances 0.000 description 70
239000003814 drug Substances 0.000 description 33
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 30
239000001301 oxygen Substances 0.000 description 30
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238000000034 method Methods 0.000 description 21
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XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 17
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238000007254 oxidation reaction Methods 0.000 description 15
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230000007423 decrease Effects 0.000 description 9
239000000523 sample Substances 0.000 description 9
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230000000903 blocking effect Effects 0.000 description 7
238000007872 degassing Methods 0.000 description 7
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238000002474 experimental method Methods 0.000 description 6
WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 6
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229910044991 metal oxide Inorganic materials 0.000 description 2
150000004706 metal oxides Chemical class 0.000 description 2
230000003287 optical effect Effects 0.000 description 2
238000004088 simulation Methods 0.000 description 2
229910052721 tungsten Inorganic materials 0.000 description 2
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GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
238000010521 absorption reaction Methods 0.000 description 1
XMPZLAQHPIBDSO-UHFFFAOYSA-N argon dimer Chemical compound [Ar].[Ar] XMPZLAQHPIBDSO-UHFFFAOYSA-N 0.000 description 1
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239000003990 capacitor Substances 0.000 description 1
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238000005516 engineering process Methods 0.000 description 1
239000011521 glass Substances 0.000 description 1
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239000001257 hydrogen Substances 0.000 description 1
229910052739 hydrogen Inorganic materials 0.000 description 1
QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 1
238000002347 injection Methods 0.000 description 1
239000007924 injection Substances 0.000 description 1
238000009413 insulation Methods 0.000 description 1
239000005001 laminate film Substances 0.000 description 1
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238000011068 loading method Methods 0.000 description 1
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239000008155 medical solution Substances 0.000 description 1
150000002739 metals Chemical class 0.000 description 1
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239000013307 optical fiber Substances 0.000 description 1
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239000002356 single layer Substances 0.000 description 1
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WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
239000010937 tungsten Substances 0.000 description 1

Images

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02307—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a liquid
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67276—Production flow monitoring, e.g. for increasing throughput
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

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Engineering & Computer Science (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Automation & Control Theory (AREA)
Cleaning Or Drying Semiconductors (AREA)

TW107102053A 2017-02-09 2018-01-19 基板處理方法以及基板處理裝置 TWI736735B (zh)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP2017-022153		2017-02-09
JP2017022153A JP6814653B2 (ja)	2017-02-09	2017-02-09	基板処理方法および基板処理装置

Publications (2)

Publication Number	Publication Date
TW201834296A TW201834296A (zh)	2018-09-16
TWI736735B true TWI736735B (zh)	2021-08-21

Family

ID=63108164

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW107102053A TWI736735B (zh)	2017-02-09	2018-01-19	基板處理方法以及基板處理裝置

Country Status (5)

Country	Link
JP (1)	JP6814653B2 (ja)
KR (1)	KR102301802B1 (ja)
CN (1)	CN110214365B (ja)
TW (1)	TWI736735B (ja)
WO (1)	WO2018147008A1 (ja)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
KR102276005B1 (ko) *	2018-08-29	2021-07-14	세메스 주식회사	기판 처리 방법 및 기판 처리 장치
KR102331260B1 (ko) *	2019-12-27	2021-11-26	세메스 주식회사	기판 처리 방법 및 기판 처리 장치
TW202406634A (zh) *	2022-04-28	2024-02-16	日商東京威力科創股份有限公司	基板處理裝置及基板處理方法
CN115138632B (zh) *	2022-08-31	2022-12-09	中国船舶重工集团公司第七0七研究所	一种提升石英谐振子q值的表面处理方法

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TW201342512A (zh) *	2012-02-29	2013-10-16	Dainippon Screen Mfg	基板處理裝置及基板處理方法
TW201508815A (zh) *	2013-03-29	2015-03-01	Shibaura Mechatronics Corp	基板處理裝置及基板處理方法

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US20050026455A1 (en) *	2003-05-30	2005-02-03	Satomi Hamada	Substrate processing apparatus and substrate processing method
US20050023149A1 (en) *	2003-06-05	2005-02-03	Tsutomu Nakada	Plating apparatus, plating method and substrate processing apparatus
US20050208774A1 (en) *	2004-01-08	2005-09-22	Akira Fukunaga	Wet processing method and processing apparatus of substrate
JP2005217282A (ja) *	2004-01-30	2005-08-11	Tokyo Electron Ltd	塗布膜形成方法及び塗布膜形成装置
JP5188216B2 (ja) *	2007-07-30	2013-04-24	大日本スクリーン製造株式会社	基板処理装置および基板処理方法
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JP5390808B2 (ja) *	2008-08-27	2014-01-15	大日本スクリーン製造株式会社	基板処理装置および基板処理方法
JP5312879B2 (ja) *	2008-09-02	2013-10-09	芝浦メカトロニクス株式会社	基板処理装置及び基板処理方法
JP5911689B2 (ja) *	2011-09-29	2016-04-27	株式会社Ｓｃｒｅｅｎホールディングス	基板処理装置および基板処理方法
JP5920867B2 (ja)	2011-09-29	2016-05-18	株式会社Ｓｃｒｅｅｎホールディングス	基板処理装置および基板処理方法
JP5837829B2 (ja) *	2012-01-11	2015-12-24	株式会社Ｓｃｒｅｅｎホールディングス	基板処理方法および基板処理装置
JP6436455B2 (ja) *	2013-10-16	2018-12-12	須賀　唯知	基板表面処理装置及び方法

2017
- 2017-02-09 JP JP2017022153A patent/JP6814653B2/ja active Active
2018
- 2018-01-16 KR KR1020197022292A patent/KR102301802B1/ko active IP Right Grant
- 2018-01-16 CN CN201880008230.9A patent/CN110214365B/zh active Active
- 2018-01-16 WO PCT/JP2018/001012 patent/WO2018147008A1/ja active Application Filing
- 2018-01-19 TW TW107102053A patent/TWI736735B/zh active

Patent Citations (2)

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Publication number	Priority date	Publication date	Assignee	Title
TW201342512A (zh) *	2012-02-29	2013-10-16	Dainippon Screen Mfg	基板處理裝置及基板處理方法
TW201508815A (zh) *	2013-03-29	2015-03-01	Shibaura Mechatronics Corp	基板處理裝置及基板處理方法

Also Published As

Publication number	Publication date
KR102301802B1 (ko)	2021-09-14
WO2018147008A1 (ja)	2018-08-16
CN110214365A (zh)	2019-09-06
KR20190099518A (ko)	2019-08-27
JP6814653B2 (ja)	2021-01-20
CN110214365B (zh)	2023-06-06
JP2018129432A (ja)	2018-08-16
TW201834296A (zh)	2018-09-16

Publication	Publication Date	Title
TWI736735B (zh)	2021-08-21	基板處理方法以及基板處理裝置
KR101935667B1 (ko)	2019-01-04	기판 처리 장치 및 기판 처리 방법
US10431448B2 (en)	2019-10-01	Wet etching method, substrate liquid processing apparatus, and storage medium
US10854481B2 (en)	2020-12-01	Substrate processing method and substrate processing apparatus
JP6671217B2 (ja)	2020-03-25	基板処理方法および基板処理装置
US20150234296A1 (en)	2015-08-20	Substrate processing apparatus
KR102301798B1 (ko)	2021-09-14	기판 처리 방법 및 기판 처리 장치
JP2009071235A (ja)	2009-04-02	基板処理装置
TWI666069B (zh)	2019-07-21	基板處理方法
US11152204B2 (en)	2021-10-19	Substrate processing method and substrate processing apparatus
US20210276052A1 (en)	2021-09-09	Substrate processing method and substrate processing device
KR20180108423A (ko)	2018-10-04	기판 처리 장치
TWI809652B (zh)	2023-07-21	基板處理方法及基板處理裝置
JP4236109B2 (ja)	2009-03-11	基板処理方法及び基板処理装置
WO2019230612A1 (ja)	2019-12-05	基板処理方法および基板処理装置
KR102585601B1 (ko)	2023-10-10	기판 처리 방법 및 기판 처리 장치
JP2021141087A (ja)	2021-09-16	基板処理方法および基板処理装置
TWI845047B (zh)	2024-06-11	基板處理方法
TW202004955A (zh)	2020-01-16	基板處理方法及基板處理裝置