SE331719B - - Google Patents
Info
- Publication number
- SE331719B SE331719B SE17035/66A SE1703566A SE331719B SE 331719 B SE331719 B SE 331719B SE 17035/66 A SE17035/66 A SE 17035/66A SE 1703566 A SE1703566 A SE 1703566A SE 331719 B SE331719 B SE 331719B
- Authority
- SE
- Sweden
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28525—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising semiconducting material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
- H01L21/2257—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer being silicon or silicide or SIPOS, e.g. polysilicon, porous silicon
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/043—Dual dielectric
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/122—Polycrystalline
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DES0100933 | 1965-12-13 |
Publications (1)
Publication Number | Publication Date |
---|---|
SE331719B true SE331719B (de) | 1971-01-11 |
Family
ID=7523384
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE17035/66A SE331719B (de) | 1965-12-13 | 1966-12-12 |
Country Status (9)
Country | Link |
---|---|
US (1) | US3502517A (de) |
JP (1) | JPS4830703B1 (de) |
AT (1) | AT264591B (de) |
CH (1) | CH489906A (de) |
DE (1) | DE1544273A1 (de) |
FR (1) | FR1504977A (de) |
GB (1) | GB1100780A (de) |
NL (1) | NL6614433A (de) |
SE (1) | SE331719B (de) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3577045A (en) * | 1968-09-18 | 1971-05-04 | Gen Electric | High emitter efficiency simiconductor device with low base resistance and by selective diffusion of base impurities |
US3601888A (en) * | 1969-04-25 | 1971-08-31 | Gen Electric | Semiconductor fabrication technique and devices formed thereby utilizing a doped metal conductor |
US3717514A (en) * | 1970-10-06 | 1973-02-20 | Motorola Inc | Single crystal silicon contact for integrated circuits and method for making same |
US3699646A (en) * | 1970-12-28 | 1972-10-24 | Intel Corp | Integrated circuit structure and method for making integrated circuit structure |
US3940288A (en) * | 1973-05-16 | 1976-02-24 | Fujitsu Limited | Method of making a semiconductor device |
US3880676A (en) * | 1973-10-29 | 1975-04-29 | Rca Corp | Method of making a semiconductor device |
JPS5950113B2 (ja) * | 1975-11-05 | 1984-12-06 | 株式会社東芝 | 半導体装置 |
US4063973A (en) * | 1975-11-10 | 1977-12-20 | Tokyo Shibaura Electric Co., Ltd. | Method of making a semiconductor device |
JPS5317081A (en) * | 1976-07-30 | 1978-02-16 | Sharp Corp | Production of i2l device |
GB1548520A (en) * | 1976-08-27 | 1979-07-18 | Tokyo Shibaura Electric Co | Method of manufacturing a semiconductor device |
US4050967A (en) * | 1976-12-09 | 1977-09-27 | Rca Corporation | Method of selective aluminum diffusion |
US4157926A (en) * | 1977-02-24 | 1979-06-12 | The United States Of America As Represented By The Secretary Of The Navy | Method of fabricating a high electrical frequency infrared detector by vacuum deposition |
US4274892A (en) * | 1978-12-14 | 1981-06-23 | Trw Inc. | Dopant diffusion method of making semiconductor products |
EP0101737A4 (de) * | 1982-02-26 | 1984-08-20 | Western Electric Co | Diffusion untiefer regionen. |
US4472212A (en) * | 1982-02-26 | 1984-09-18 | At&T Bell Laboratories | Method for fabricating a semiconductor device |
US4698104A (en) * | 1984-12-06 | 1987-10-06 | Xerox Corporation | Controlled isotropic doping of semiconductor materials |
EP0410390A3 (en) * | 1989-07-27 | 1993-02-24 | Seiko Instruments Inc. | Method of producing semiconductor device |
WO2012170087A1 (en) * | 2011-06-10 | 2012-12-13 | Massachusetts Institute Of Technology | High-concentration active doping in semiconductors and semiconductor devices produced by such doping |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3089794A (en) * | 1959-06-30 | 1963-05-14 | Ibm | Fabrication of pn junctions by deposition followed by diffusion |
NL268758A (de) * | 1960-09-20 | |||
US3189973A (en) * | 1961-11-27 | 1965-06-22 | Bell Telephone Labor Inc | Method of fabricating a semiconductor device |
BE636316A (de) * | 1962-08-23 | 1900-01-01 | ||
US3275910A (en) * | 1963-01-18 | 1966-09-27 | Motorola Inc | Planar transistor with a relative higher-resistivity base region |
US3326729A (en) * | 1963-08-20 | 1967-06-20 | Hughes Aircraft Co | Epitaxial method for the production of microcircuit components |
DE1514807B2 (de) * | 1964-04-15 | 1971-09-02 | Texas Instruments Inc., Dallas. Tex. (V.St.A.) | Verfahren zum herstellen einer planaren halbleiteranordnung |
-
1965
- 1965-12-13 DE DE19651544273 patent/DE1544273A1/de active Pending
-
1966
- 1966-10-13 NL NL6614433A patent/NL6614433A/xx unknown
- 1966-12-05 US US598986A patent/US3502517A/en not_active Expired - Lifetime
- 1966-12-09 CH CH1760266A patent/CH489906A/de not_active IP Right Cessation
- 1966-12-12 SE SE17035/66A patent/SE331719B/xx unknown
- 1966-12-12 FR FR87056A patent/FR1504977A/fr not_active Expired
- 1966-12-12 AT AT1145766A patent/AT264591B/de active
- 1966-12-12 GB GB55471/66A patent/GB1100780A/en not_active Expired
- 1966-12-13 JP JP41081285A patent/JPS4830703B1/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
US3502517A (en) | 1970-03-24 |
FR1504977A (fr) | 1967-12-08 |
NL6614433A (de) | 1967-06-14 |
JPS4830703B1 (de) | 1973-09-22 |
CH489906A (de) | 1970-04-30 |
DE1544273A1 (de) | 1969-09-04 |
AT264591B (de) | 1968-09-10 |
GB1100780A (en) | 1968-01-24 |