NL6614433A - - Google Patents

Info

Publication number
NL6614433A
NL6614433A NL6614433A NL6614433A NL6614433A NL 6614433 A NL6614433 A NL 6614433A NL 6614433 A NL6614433 A NL 6614433A NL 6614433 A NL6614433 A NL 6614433A NL 6614433 A NL6614433 A NL 6614433A
Authority
NL
Netherlands
Application number
NL6614433A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL6614433A publication Critical patent/NL6614433A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28525Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising semiconducting material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251Diffusion into or out of group IV semiconductors
    • H01L21/2254Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H01L21/2257Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer being silicon or silicide or SIPOS, e.g. polysilicon, porous silicon
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/043Dual dielectric
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/122Polycrystalline

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
NL6614433A 1965-12-13 1966-10-13 NL6614433A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0100933 1965-12-13

Publications (1)

Publication Number Publication Date
NL6614433A true NL6614433A (de) 1967-06-14

Family

ID=7523384

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6614433A NL6614433A (de) 1965-12-13 1966-10-13

Country Status (9)

Country Link
US (1) US3502517A (de)
JP (1) JPS4830703B1 (de)
AT (1) AT264591B (de)
CH (1) CH489906A (de)
DE (1) DE1544273A1 (de)
FR (1) FR1504977A (de)
GB (1) GB1100780A (de)
NL (1) NL6614433A (de)
SE (1) SE331719B (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3577045A (en) * 1968-09-18 1971-05-04 Gen Electric High emitter efficiency simiconductor device with low base resistance and by selective diffusion of base impurities
US3601888A (en) * 1969-04-25 1971-08-31 Gen Electric Semiconductor fabrication technique and devices formed thereby utilizing a doped metal conductor
US3717514A (en) * 1970-10-06 1973-02-20 Motorola Inc Single crystal silicon contact for integrated circuits and method for making same
US3699646A (en) * 1970-12-28 1972-10-24 Intel Corp Integrated circuit structure and method for making integrated circuit structure
US3940288A (en) 1973-05-16 1976-02-24 Fujitsu Limited Method of making a semiconductor device
US3880676A (en) * 1973-10-29 1975-04-29 Rca Corp Method of making a semiconductor device
JPS5950113B2 (ja) * 1975-11-05 1984-12-06 株式会社東芝 半導体装置
US4063973A (en) * 1975-11-10 1977-12-20 Tokyo Shibaura Electric Co., Ltd. Method of making a semiconductor device
JPS5317081A (en) * 1976-07-30 1978-02-16 Sharp Corp Production of i2l device
GB1548520A (en) * 1976-08-27 1979-07-18 Tokyo Shibaura Electric Co Method of manufacturing a semiconductor device
US4050967A (en) * 1976-12-09 1977-09-27 Rca Corporation Method of selective aluminum diffusion
US4157926A (en) * 1977-02-24 1979-06-12 The United States Of America As Represented By The Secretary Of The Navy Method of fabricating a high electrical frequency infrared detector by vacuum deposition
US4274892A (en) * 1978-12-14 1981-06-23 Trw Inc. Dopant diffusion method of making semiconductor products
WO1983003029A1 (en) * 1982-02-26 1983-09-01 Western Electric Co Diffusion of shallow regions
US4472212A (en) * 1982-02-26 1984-09-18 At&T Bell Laboratories Method for fabricating a semiconductor device
US4698104A (en) * 1984-12-06 1987-10-06 Xerox Corporation Controlled isotropic doping of semiconductor materials
EP0410390A3 (en) * 1989-07-27 1993-02-24 Seiko Instruments Inc. Method of producing semiconductor device
US9692209B2 (en) 2011-06-10 2017-06-27 Massachusetts Institute Of Technology High-concentration active doping in semiconductors and semiconductor devices produced by such doping

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3089794A (en) * 1959-06-30 1963-05-14 Ibm Fabrication of pn junctions by deposition followed by diffusion
NL268758A (de) * 1960-09-20
US3189973A (en) * 1961-11-27 1965-06-22 Bell Telephone Labor Inc Method of fabricating a semiconductor device
BE636317A (de) * 1962-08-23 1900-01-01
US3275910A (en) * 1963-01-18 1966-09-27 Motorola Inc Planar transistor with a relative higher-resistivity base region
US3326729A (en) * 1963-08-20 1967-06-20 Hughes Aircraft Co Epitaxial method for the production of microcircuit components
NL6504750A (de) * 1964-04-15 1965-10-18

Also Published As

Publication number Publication date
DE1544273A1 (de) 1969-09-04
AT264591B (de) 1968-09-10
SE331719B (de) 1971-01-11
FR1504977A (fr) 1967-12-08
US3502517A (en) 1970-03-24
CH489906A (de) 1970-04-30
GB1100780A (en) 1968-01-24
JPS4830703B1 (de) 1973-09-22

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