US3895602A - Apparatus for effecting deposition by ion bombardment - Google Patents

Apparatus for effecting deposition by ion bombardment Download PDF

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US3895602A
US3895602A US442623A US44262374A US3895602A US 3895602 A US3895602 A US 3895602A US 442623 A US442623 A US 442623A US 44262374 A US44262374 A US 44262374A US 3895602 A US3895602 A US 3895602A
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gun
holder
target
substrate
ion
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Albert Bobenrieth
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Thales SA
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Thomson CSF SA
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/46—Sputtering by ion beam produced by an external ion source
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/20—Ion sources; Ion guns using particle beam bombardment, e.g. ionisers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching

Definitions

  • An apparatus for effecting deposition by ion bombardment comprises -a multiple grid ion gun and a target References Cited with a hollow central portion.
  • the substrate upon UNITED STATES PATENTS which the deposit is to be effected is carried by a sup- 2 345 080 3/1944 Ardenne 219 121 EB and can be successively and directly exposed to 214201722 /1947 Peterson et a1.
  • the known kinds of apparatus for carrying out operations of this kind are of the triode cathode-sputtering kind.
  • the assembly of target and substrate is located in a region of strong electric field.
  • a suitable potential is applied to the sample.
  • this potential is applied to the target.
  • the surfaces of the insulator is positively charged by the arrival of positive ions, and the emission of secondary electrons, this giving rise to an ion concentration in the insulator-covered regions.
  • the object of the present invention is a novel apparatus for deposition by ion bombardment, which makes it possible to successively carry out cleaning by ion bombardment and the deposition upon the substrate of the material of the target, which method is free of the said drawback.
  • the ion bombardment apparatus in accordance with the invention comprises an evacuated enclosure and means for supplying inert gas therein; an ion-gun made up of an anode and multiple accelerator grids in order to accelerate the ions formed in the gun, a substrate holder and a target made of the material which is to be deposited, these latter being arranged in order to receive the accelerated ions, elements being provided in order to successively subject the substrate to the action of the accelerated ions, and to the stream of atoms stemming from the atomisation of said target by the ions.
  • FIG. 1 illustrates in transverse section a first embodiment of the invention
  • FIG. 2 schematically illustrates the substrate holder and its accessory parts
  • FIG. 3 illustrates one of the grids of the device shown in FIG. 1;
  • FIG. 4 in transverse section, illustrates a second embodiment of the invention.
  • the device shown in FIG. 1 comprises a vacuumtight enclosure 1. This enclosure is evacuated through the pipe 2. It incorporates an ion gun 3 into which there opens a pipe 30 supplying the gas to be ionised, for example argon.
  • This known kind of gun comprises a tungsten filament 31 which emits electrons.
  • the filament is supported by the top part of the gun 3, namely the part 111, this top part being placed at a potenticl in the order of 1000 V and being insulated from the remainder of the enclosure by an insulator ring 112, a vacuum gauge 42 controls the residual pressure in the gun, which should be in the order of 10 mmHg.
  • the gun moreover comprises an accelerating anode 32 placed at a slightly higher potential than the part 111 (around 1040 V); the tungsten filament 31, one terminal of which is connected to the enclosure 111, has its other terminal connected to a direct voltage source supplying a voltage in the order of 30V.
  • the portion 111 of the enclosure carries a grid 33 containing some hundreds of holes, and is electrically connected to it as well.
  • the grid 34 is placed at a negative potential of the order of 200 V, whilst the grid 35 is grounded.
  • a solenoid surrounds the part 111 and creates a magnetic field directed along the axis of the gun. Accordingly, the electrons emitted by the filament have their trajectories elongated and make it possible to effect total ionisation of the argon.
  • the grid 34 which is at a negative potential, prevents the electrons emanating from a filament 31 from penetrating into the enclosure 1, and accelerates the ions.
  • the gun produces a uniform ion density in the order of 1m A/cm of low energy (less than or equal to lKeV).
  • the object holder 39 carrying the substrate 40 which is to be covered.
  • the substrate is arranged in order to be able to face the central part of the gun.
  • the object holder is itself carried by a shaft 41 perpendicular to the ion gun axis, and can be rotated through by a crank and a gear system 42.
  • the substrate can thus, as required, be subjected to or removed from, the effect of ion bombardment.
  • This shaft passes through the enclosure by virtue of a vacuum-tight seal.
  • the target 38 of material, which is to be atomised, is arranged on the gun axis beyond the substrate holder. It takes the form of a hollow conical frustum, the smaller base of which has the same diameter as the object holder 39.
  • a retractable mask 51 makes it possible, before an operation, to adjust the gun whilst avoiding bombardment of the substrate.
  • FIG. 2 illustrates the sample holder which comprises a heater element 45 making it possible to raise it to a suitable temperature (600 or 700 for example) in order to degas the substrate, and a pipe system 44 through which a cooling fluid can be circulated in order to bring this temperature to a suitable level during bombardment.
  • This pipe arrangement comprises at its two ends noses 46 and 47 wound spiral fashion and capable of undergoing a rotation of 180 C.
  • the vacuum is produced in the enclosure (pressure of 10' mm. Hg).
  • the substrate, protected by the mask 51, is placed opposite the gun. The voltage is applied to the latter. Then, the argon pipe is opened, maintaining a pressure of 10 mm.l-lg.
  • the plasma develops under the action of filament 31. After retraction of the mask, the substrate is bombarded by the A ions and is cleaned.
  • the filament 400 in the electric field-free region, emits electrons which neutralise the positive charges on the ions and prevent the insulating zones of the surface of the substrate from becoming positively charged.
  • the object holder After cleaning. the object holder is rotated through 180 and the substrate is then opposite the target which is then bombarded by that part of the ion beam not blocked off by the substrate. The atoms which it liberates thus become deposited upon the substrate.
  • the current density is uni form to within over 50 mm (central part).
  • Diameter of the object holder I 40 mm.
  • the deposition rates obtained are 200 Angstroms/minute for molybdenum and 1000 Angstroms/minute for gold.
  • the gun In order, during deposition, to prevent the back of the substrate from being bombarded by the central part of the beam, it is possible to modify the gun by splitting the grid 33 into two sections, the central section 331 and the peripheral 332, as shown in FIG. 3, the grid here being shown in plan.
  • the part 332 is annular in form and the part 331 is of disc form.
  • the internal part has a diameter of 40 mm
  • the external ring has an internal diameter of 42 mm and an external diameter of 100 mm.
  • the two sections 331 and 332 of the grid are raised to the potential 1000 V. This makes it possible to simultaneously clean the substrate and the internal surface of the target.
  • the central part 332 of the grid is placed at a potential slightly higher than the anode 32, the peripheral section 332 remaining at the potential 1000 V which prevents the extraction of ions from the central part of the gun and therefore prevents bombardment of the rear portion of the object holder.
  • FIG. 4 illustrates a second example of the invention.
  • similar references designate similar elements to those so marked in FIG. 1.
  • Only the output grid of the gun 3 has been shown. It contains holes only at its peripheral region. The gun 3 can therefore only bombard the target 38.
  • the latter is hollow.
  • This has the same diameter as the substrate, the object holder is fixed, the substrate is opposite the gun 300, and the assembly of gun 300 object holder 39 and target 38 is carried by a set of pillars 301 providing the electrical connections for the heater element of the object holder and the means of supplying it with cooling fluid.
  • a retractable mask- 302 is arranged between the substrate and the gun 300. For example, this mask is rotatable about a vertical axis, and in one of its position, it is positioned for receiving the totality of the beam incoming from the gun 300.
  • the gun 300 is supplied with a voltage, gun 3 is stopped the mask 302 is retracted.
  • the ions coming from the gun 300 pass through the target 38 and clean the substrate;
  • the gun 300 is stopped and the mask 302 protects the substrate against the impurities detached during cleaning of the target 38.
  • the gun 3 has a voltage applied to it;
  • the target 302 is retracted and the substrate is exposed to bombardment by the atoms coming from the target.
  • An apparatus for effecting deposition by ion bombardment comprising an evacuated enclosure and in said enclosure: an ion source comprising at least one ion gun producing a uniform beam, a target mounted below said source and made of the material which is to be atomised, an object-holder aligned with and disposed between said source and said target so that ions passing said object-holder impinge on said target and supporting a substrate having a surface to be bombarded means for moving said holder between a first position exposing said surface to be bombarded to said beam and a second position exposing said substrate to the stream of atoms emanating from the target and means for blocking a portion of said beam whereby said beam does not impinge on said object-holder when said object-holder is in said second position.
  • an ion source comprising at least one ion gun producing a uniform beam
  • a target mounted below said source and made of the material which is to be atomised
  • an object-holder aligned with and disposed between said source and said target so that ions
  • said means for moving comprises a shaft perpendicular to the gun axis, said object holder being mounted upon said shaft, and a mechanical system enabling said shaft to be rotated through 4'.
  • said object-holder has a heating system to raise it to a predetermined temperature and piping arrangements passing a cooling fluid at a suitable temperature.
  • said gun comprises grids containing mutually opposite holes, each grid possessing an annular and a peripheral portion, the grid closest to the accelerating anode having connections placing the central part at a higher potential than the peripheral part in order to effect said blocking of a portion of said beam.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Combustion & Propulsion (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

An apparatus for effecting deposition by ion bombardment comprises a multiple grid ion gun and a target with a hollow central portion. The substrate upon which the deposit is to be effected is carried by a support and can be successively and directly exposed to the ion beam in order to produce a suitable surface condition and to the atoms coming from the target when the latter is subjected to ion bombardment.

Description

917F104- XR" 308958602" United States Patent 11 1 1111 3,895,602 Bobenrieth July 22, 1975 [541 APPARATUS FOR EFFECTING 3,087,838 4/1963 Lubin l18/49.1 x I B I B MBARDMENT 3,143,680 8/1964 Klein et a1. 219/121 EB DEPOSIT ON Y ON 3,205,087 9/1965 Allen 118/49.1 x [75] Inventor: Albert Bobenrieth, Pa s, F anc 3,238,413 3/1966 Thom et a1. 313/360 x 3,310,424 3/1967 Wehner et a1.... 118/491 x [73] Pans France 3,326,178 6 1967 DeAngelis ..118/49.1 22 Filed; 14 1974 3,347,701 10/1967 Lamagishi et a1 118/491 X 3,516,855 6/1970 G011 et a1. 118/491 x [2]] Appl. N0.: 442,623 3,528,387 9/1970 Hamilton 118/491 1 3,563,809 2/1971 Wilson 118/49,] x [30] Foreign Application Priority Dam 3,719,893 3/1973 de Packh 313/359 x Feb. 20, 1973 France 73.05937 Primary Examiner Moms Kaplan A t, F h [52 U.S.C1. 118/491; 117/93.3;219/121 EB; Attorney Cus Darby and Cushman 313/259 [51] Int. Cl. C23c 13/12 [58] Field 61 Search 118/491, 49.5; 117/933; [57] ABSTRACT 219/12l 360, 362 An apparatus for effecting deposition by ion bombardment comprises -a multiple grid ion gun and a target References Cited with a hollow central portion. The substrate upon UNITED STATES PATENTS which the deposit is to be effected is carried by a sup- 2 345 080 3/1944 Ardenne 219 121 EB and can be successively and directly exposed to 214201722 /1947 Peterson et a1. 118/49.1 x the ion beam in Order to Produce a Suitable surface 2,463,180 3/1949 Johnson 118/49.1 X condition and t0 the atoms coming from the target 2,771,568 11/1956 Steigerwald 117/933 X when the latter is subjected to ion bombardment. 2,961,559 11/1960 Marshall, Jr. 313/362 3,005,931 1961 Dandl 313/362 x 6 Claims, 4 Drawing Figures g 7 1 I I r I 100 J i I 1 "I", l L
PATENTEDJUL22 ms 3.895.602 SHEET 1 APPARATUS FOR EFFECTING DEPOSITION BY ION BOMBARDMENT To produce upon the surface of a substrate made for example of semiconductor material, a deposit of a predetermined material which adheres very firmly and is extremely pure even at the interface, it is desirable to carry out the following operations:
maintain the substrate at a suitable temperature, that is to say to provide on the support on which the substrate rests, heating or cooling means;
beforehand clean the substrate, using ion bombardment for example, positive argon ions, the charges on which are neutralised by an electron cloud in order to prevent the formation of electrical charges at the insulating zones on the surface of the substrate, a phenomenon which might well occur, for example on a silicon wafer, certain Zones of which are oxidised;
maintain within the enclosure, the lowest possible pressure in order to restrict contamination firstly of all the substrate surface which constitutes the future interface (whose purity condition is fundamental for example in the case of Schottky diodes), and secondly of the deposited layer or film.
The known kinds of apparatus for carrying out operations of this kind, are of the triode cathode-sputtering kind.
The assembly of target and substrate is located in a region of strong electric field. For the cleaning operation, a suitable potential is applied to the sample. For cathode sputtering, this potential is applied to the target. In the case of a substrate partially covered with an insulator, the surfaces of the insulator is positively charged by the arrival of positive ions, and the emission of secondary electrons, this giving rise to an ion concentration in the insulator-covered regions. Moreover, in apparatus of this kind, it is difficult to achieve a pressure much below mmHg, in the neighbourhood of the substrate.
The object of the present invention is a novel apparatus for deposition by ion bombardment, which makes it possible to successively carry out cleaning by ion bombardment and the deposition upon the substrate of the material of the target, which method is free of the said drawback.
The ion bombardment apparatus in accordance with the invention comprises an evacuated enclosure and means for supplying inert gas therein; an ion-gun made up of an anode and multiple accelerator grids in order to accelerate the ions formed in the gun, a substrate holder and a target made of the material which is to be deposited, these latter being arranged in order to receive the accelerated ions, elements being provided in order to successively subject the substrate to the action of the accelerated ions, and to the stream of atoms stemming from the atomisation of said target by the ions.
The invention will be better understood from a consideration of the ensuing description and by reference to the attached drawings, in which:
FIG. 1 illustrates in transverse section a first embodiment of the invention;
FIG. 2 schematically illustrates the substrate holder and its accessory parts;
FIG. 3illustrates one of the grids of the device shown in FIG. 1;
FIG. 4, in transverse section, illustrates a second embodiment of the invention.
The device shown in FIG. 1 comprises a vacuumtight enclosure 1. This enclosure is evacuated through the pipe 2. It incorporates an ion gun 3 into which there opens a pipe 30 supplying the gas to be ionised, for example argon.
This known kind of gun comprises a tungsten filament 31 which emits electrons. The filament is supported by the top part of the gun 3, namely the part 111, this top part being placed at a potenticl in the order of 1000 V and being insulated from the remainder of the enclosure by an insulator ring 112, a vacuum gauge 42 controls the residual pressure in the gun, which should be in the order of 10 mmHg.
The gun moreover comprises an accelerating anode 32 placed at a slightly higher potential than the part 111 (around 1040 V); the tungsten filament 31, one terminal of which is connected to the enclosure 111, has its other terminal connected to a direct voltage source supplying a voltage in the order of 30V.
The portion 111 of the enclosure carries a grid 33 containing some hundreds of holes, and is electrically connected to it as well. Two other perforated grids, in which the holes are located opposite those in the grid 33, namely the grids 34 and 35, are also provided. The grid 34 is placed at a negative potential of the order of 200 V, whilst the grid 35 is grounded.
A solenoid surrounds the part 111 and creates a magnetic field directed along the axis of the gun. Accordingly, the electrons emitted by the filament have their trajectories elongated and make it possible to effect total ionisation of the argon. The grid 34, which is at a negative potential, prevents the electrons emanating from a filament 31 from penetrating into the enclosure 1, and accelerates the ions.
The gun produces a uniform ion density in the order of 1m A/cm of low energy (less than or equal to lKeV).
In the enclosure 1, there is then encountered another tungsten filament 400. This, when heated, emits an electron cloud which compensates the positive charges on the ions leaving the gun 3.
This is followed by the object holder 39 carrying the substrate 40 which is to be covered. The substrate is arranged in order to be able to face the central part of the gun. The object holder is itself carried by a shaft 41 perpendicular to the ion gun axis, and can be rotated through by a crank and a gear system 42. The substrate can thus, as required, be subjected to or removed from, the effect of ion bombardment. This shaft passes through the enclosure by virtue of a vacuum-tight seal. The target 38 of material, which is to be atomised, is arranged on the gun axis beyond the substrate holder. It takes the form of a hollow conical frustum, the smaller base of which has the same diameter as the object holder 39.
A retractable mask 51 makes it possible, before an operation, to adjust the gun whilst avoiding bombardment of the substrate.
FIG. 2 illustrates the sample holder which comprises a heater element 45 making it possible to raise it to a suitable temperature (600 or 700 for example) in order to degas the substrate, and a pipe system 44 through which a cooling fluid can be circulated in order to bring this temperature to a suitable level during bombardment. This pipe arrangement comprises at its two ends noses 46 and 47 wound spiral fashion and capable of undergoing a rotation of 180 C.
The operation of the system is as follows:
After having attached the substrate to the object holder and placed the target in position, the vacuum is produced in the enclosure (pressure of 10' mm. Hg). The substrate, protected by the mask 51, is placed opposite the gun. The voltage is applied to the latter. Then, the argon pipe is opened, maintaining a pressure of 10 mm.l-lg.
The plasma develops under the action of filament 31. After retraction of the mask, the substrate is bombarded by the A ions and is cleaned.
The filament 400, in the electric field-free region, emits electrons which neutralise the positive charges on the ions and prevent the insulating zones of the surface of the substrate from becoming positively charged.
After cleaning. the object holder is rotated through 180 and the substrate is then opposite the target which is then bombarded by that part of the ion beam not blocked off by the substrate. The atoms which it liberates thus become deposited upon the substrate.
By way of non-limitative example, the respective dimensions and the currents utilised are as follows:
For the gun:
Beam diameter 100 mm. The current density is uni form to within over 50 mm (central part).
Current density: i= 10' A/cm Ion energy: E 10 eV.
Diameter of the object holder: I 40 mm.
The deposition rates obtained are 200 Angstroms/minute for molybdenum and 1000 Angstroms/minute for gold.
In order, during deposition, to prevent the back of the substrate from being bombarded by the central part of the beam, it is possible to modify the gun by splitting the grid 33 into two sections, the central section 331 and the peripheral 332, as shown in FIG. 3, the grid here being shown in plan.
These two parts are insulated from one another; the part 332 is annular in form and the part 331 is of disc form. In the cited example, the internal part has a diameter of 40 mm, the external ring has an internal diameter of 42 mm and an external diameter of 100 mm.
During the first phase of cleaning the substrate by bombardment, the two sections 331 and 332 of the grid are raised to the potential 1000 V. This makes it possible to simultaneously clean the substrate and the internal surface of the target. When the object holder is rotated in order to expose the substrate to the deposition of the particles detached from the target, the central part 332 of the grid is placed at a potential slightly higher than the anode 32, the peripheral section 332 remaining at the potential 1000 V which prevents the extraction of ions from the central part of the gun and therefore prevents bombardment of the rear portion of the object holder.
FIG. 4 illustrates a second example of the invention. In this figure, similar references designate similar elements to those so marked in FIG. 1.
Only the output grid of the gun 3 has been shown. It contains holes only at its peripheral region. The gun 3 can therefore only bombard the target 38. The latter is hollow. At the other side of the hollow target, there is arranged a gun 300 supplied with argon from a pipe I 330; only the output grid 335 has been shown. This has the same diameter as the substrate, the object holder is fixed, the substrate is opposite the gun 300, and the assembly of gun 300 object holder 39 and target 38 is carried by a set of pillars 301 providing the electrical connections for the heater element of the object holder and the means of supplying it with cooling fluid. A retractable mask- 302 is arranged between the substrate and the gun 300. For example, this mask is rotatable about a vertical axis, and in one of its position, it is positioned for receiving the totality of the beam incoming from the gun 300.
Operation takes place in three phases:
a. Cleaning the substrate:
The gun 300 is supplied with a voltage, gun 3 is stopped the mask 302 is retracted. The ions coming from the gun 300 pass through the target 38 and clean the substrate;
b. Cleaning the target:
The gun 300 is stopped and the mask 302 protects the substrate against the impurities detached during cleaning of the target 38. The gun 3 has a voltage applied to it;
c. Deposition, the gun 3 remaining live:
The target 302 is retracted and the substrate is exposed to bombardment by the atoms coming from the target.
What I claim is:
1. An apparatus for effecting deposition by ion bombardment, comprising an evacuated enclosure and in said enclosure: an ion source comprising at least one ion gun producing a uniform beam, a target mounted below said source and made of the material which is to be atomised, an object-holder aligned with and disposed between said source and said target so that ions passing said object-holder impinge on said target and supporting a substrate having a surface to be bombarded means for moving said holder between a first position exposing said surface to be bombarded to said beam and a second position exposing said substrate to the stream of atoms emanating from the target and means for blocking a portion of said beam whereby said beam does not impinge on said object-holder when said object-holder is in said second position.
21. An apparatus as claimed in claim 1, wherein the target is hollow, and has an internal surface frustoconical with an axis corresponding to the axis of said gun in order to allow part of the ion beam to pass and thus bombard said object.
3. An apparatus as claimed in claim 1, wherein said means for moving comprises a shaft perpendicular to the gun axis, said object holder being mounted upon said shaft, and a mechanical system enabling said shaft to be rotated through 4'. An apparatus as claimed in claim 1, wherein said object-holder has a heating system to raise it to a predetermined temperature and piping arrangements passing a cooling fluid at a suitable temperature.
5. An apparatus as claimed in claim 1, wherein said gun comprises grids containing mutually opposite holes, each grid possessing an annular and a peripheral portion, the grid closest to the accelerating anode having connections placing the central part at a higher potential than the peripheral part in order to effect said blocking of a portion of said beam.
'6. An apparatus as claimed in claim 1, characterised in that at the exit of the ion gun there is a filament emitting electrons which neutralise the positive charges on the ions.

Claims (6)

1. An apparatus for effecting deposition by ion bombardment, comprising an evacuated enclosure and in said enclosure: an ion source comprising at least one ion gun producing a uniform beam, a target mounted below said source and made of the material which is to be atomised, an object-holder aligned with and disposed between said source and said target so that ions passing said object-holder impinge on said target and supporting a substrate having a surface to be bombarded means for moving said holder between a first position exposing said surface to be bombarded to said beam and a second position exposing said substrate to the stream of atoms emanating from the target and means for blocking a portion of said beam whereby said beam does not impinge on said object-holder when said object-holder is in said second position.
2. An apparatus as claimed in claim 1, wherein the target is hollow, and has an internal surface frustoconical with an axis corresponding to the axis of said gun in order to allow part of the ion beam to pass and thus bombard said object.
3. An apparatus as claimed in claim 1, wherein said means for moving comprises a shaft perpendicular to the gun axis, said object holder being mounted upon said shaft, and a mechanical system enabling said shaft to be rotated through 180*.
4. An apparatus as claimed in claim 1, wherein said object-holder has a heating system to raise it to a predetermined temperature and piping arrangements passing a cooling fluid at a suitable temperature.
5. An apparatus as claimed in claim 1, wherein said gun comprises grids containing mutually opposite holes, each grid possessing an annular and a peripheral portion, the grid closest to the accelerating anode having connections placing the central part at a higher potential than the peripheral part in order to effect said blocking of a portion of said beam.
6. An apparatus as claimed in claim 1, characterised in that at the exit of the ion gun there is a filament emitting electrons which neutralise the positive charges on the ions.
US442623A 1973-02-20 1974-02-14 Apparatus for effecting deposition by ion bombardment Expired - Lifetime US3895602A (en)

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Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4100055A (en) * 1977-06-10 1978-07-11 Varian Associates, Inc. Target profile for sputtering apparatus
US4142958A (en) * 1978-04-13 1979-03-06 Litton Systems, Inc. Method for fabricating multi-layer optical films
US4173944A (en) * 1977-05-20 1979-11-13 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh Silverplated vapor deposition chamber
US4179530A (en) * 1977-05-20 1979-12-18 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh Process for the deposition of pure semiconductor material
US4197175A (en) * 1977-06-01 1980-04-08 Balzers Aktiengesellschaft Method and apparatus for evaporating materials in a vacuum coating plant
US4690744A (en) * 1983-07-20 1987-09-01 Konishiroku Photo Industry Co., Ltd. Method of ion beam generation and an apparatus based on such method
USRE32849E (en) * 1978-04-13 1989-01-31 Litton Systems, Inc. Method for fabricating multi-layer optical films
US4885070A (en) * 1988-02-12 1989-12-05 Leybold Aktiengesellschaft Method and apparatus for the application of materials
US4952294A (en) * 1988-03-15 1990-08-28 Collins George J Apparatus and method for in-situ generation of dangerous polyatomic gases, including polyatomic radicals
US5059292A (en) * 1989-02-28 1991-10-22 Collins George J Single-chamber apparatus for in-situ generation of dangerous polyatomic gases and radicals from a source material contained within a porous foamed structure
EP0549246A2 (en) * 1991-12-27 1993-06-30 Johnson Matthey Public Limited Company Multilayer film materials system
US5415753A (en) * 1993-07-22 1995-05-16 Materials Research Corporation Stationary aperture plate for reactive sputter deposition
US5459296A (en) * 1990-12-15 1995-10-17 Sidmar N.V. Method for the low-maintenance operation of an apparatus for producing a surface structure, and apparatus
US5601654A (en) * 1996-05-31 1997-02-11 The Regents Of The University Of California, Office Of Technology Transfer Flow-through ion beam source
US6051115A (en) * 1996-07-16 2000-04-18 Korea Institute Of Science And Technology Adhesive strength increasing method for metal thin film
WO2000023633A1 (en) * 1998-10-20 2000-04-27 Cvc Products, Inc. Shutter for thin-film processing equipment
US20060099341A1 (en) * 2003-04-11 2006-05-11 Rudolf Beckmann High frequency plasma jet source and method for irradiating a surface
US20070163503A1 (en) * 2006-01-17 2007-07-19 Mitsubishi Heavy Industries, Ltd. Thin film preparation apparatus
CN103474318A (en) * 2013-10-10 2013-12-25 大连交通大学 Sputtering ion gun
US20140027274A1 (en) * 2012-07-27 2014-01-30 Varian Semiconductor Equipment Associates, Inc. Three Dimensional Metal Deposition Technique
CN111886360A (en) * 2017-12-22 2020-11-03 地质研究院及核科学有限公司 Ion beam sputtering apparatus and method

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4259145A (en) * 1979-06-29 1981-03-31 International Business Machines Corporation Ion source for reactive ion etching
DE3834318A1 (en) * 1988-10-08 1990-04-12 Leybold Ag DEVICE FOR APPLYING DIELECTRIC OR METAL MATERIALS

Citations (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2345080A (en) * 1940-02-19 1944-03-28 Ardenne Manfred Von Arrangement for producing filters
US2420722A (en) * 1942-12-11 1947-05-20 Bausch & Lomb Apparatus for coating surfaces
US2463180A (en) * 1943-04-29 1949-03-01 Bell Telephone Labor Inc Method and apparatus for making mosaic targets for electron beams
US2771568A (en) * 1951-01-31 1956-11-20 Zeiss Carl Utilizing electron energy for physically and chemically changing members
US2961559A (en) * 1959-08-28 1960-11-22 Jr John Marshall Methods and means for obtaining hydromagnetically accelerated plasma jet
US3005931A (en) * 1960-03-29 1961-10-24 Raphael A Dandl Ion gun
US3087838A (en) * 1955-10-05 1963-04-30 Hupp Corp Methods of photoelectric cell manufacture
US3143680A (en) * 1958-11-25 1964-08-04 Commissariat Energie Atomique Ion accelerators
US3205087A (en) * 1961-12-15 1965-09-07 Martin Marietta Corp Selective vacuum deposition of thin film
US3238413A (en) * 1962-05-31 1966-03-01 Thom Karlheinz Magnetically controlled plasma accelerator
US3310424A (en) * 1963-05-14 1967-03-21 Litton Systems Inc Method for providing an insulating film on a substrate
US3326178A (en) * 1963-09-12 1967-06-20 Angelis Henry M De Vapor deposition means to produce a radioactive source
US3347701A (en) * 1963-02-05 1967-10-17 Fujitsu Ltd Method and apparatus for vapor deposition employing an electron beam
US3516855A (en) * 1967-05-29 1970-06-23 Ibm Method of depositing conductive ions by utilizing electron beam
US3528387A (en) * 1964-03-17 1970-09-15 Singer General Precision Ion cleaning and vapor deposition
US3563809A (en) * 1968-08-05 1971-02-16 Hughes Aircraft Co Method of making semiconductor devices with ion beams
US3719893A (en) * 1971-12-23 1973-03-06 Us Navy System and method for accelerating charged particles utilizing pulsed hollow beam electrons

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1459893A (en) * 1964-08-22 1966-06-17 Balzers Hochvakuum Process for the production of thin films by deposition using spraying
DE1515318A1 (en) * 1964-12-28 1969-07-31 Hermsdorf Keramik Veb Device for the production of thin layers on a carrier by means of ion beam atomization
FR1483391A (en) * 1966-06-15 1967-06-02 Ion Physics Corp Method and apparatus for forming deposits under high vacuum

Patent Citations (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2345080A (en) * 1940-02-19 1944-03-28 Ardenne Manfred Von Arrangement for producing filters
US2420722A (en) * 1942-12-11 1947-05-20 Bausch & Lomb Apparatus for coating surfaces
US2463180A (en) * 1943-04-29 1949-03-01 Bell Telephone Labor Inc Method and apparatus for making mosaic targets for electron beams
US2771568A (en) * 1951-01-31 1956-11-20 Zeiss Carl Utilizing electron energy for physically and chemically changing members
US3087838A (en) * 1955-10-05 1963-04-30 Hupp Corp Methods of photoelectric cell manufacture
US3143680A (en) * 1958-11-25 1964-08-04 Commissariat Energie Atomique Ion accelerators
US2961559A (en) * 1959-08-28 1960-11-22 Jr John Marshall Methods and means for obtaining hydromagnetically accelerated plasma jet
US3005931A (en) * 1960-03-29 1961-10-24 Raphael A Dandl Ion gun
US3205087A (en) * 1961-12-15 1965-09-07 Martin Marietta Corp Selective vacuum deposition of thin film
US3238413A (en) * 1962-05-31 1966-03-01 Thom Karlheinz Magnetically controlled plasma accelerator
US3347701A (en) * 1963-02-05 1967-10-17 Fujitsu Ltd Method and apparatus for vapor deposition employing an electron beam
US3310424A (en) * 1963-05-14 1967-03-21 Litton Systems Inc Method for providing an insulating film on a substrate
US3326178A (en) * 1963-09-12 1967-06-20 Angelis Henry M De Vapor deposition means to produce a radioactive source
US3528387A (en) * 1964-03-17 1970-09-15 Singer General Precision Ion cleaning and vapor deposition
US3516855A (en) * 1967-05-29 1970-06-23 Ibm Method of depositing conductive ions by utilizing electron beam
US3563809A (en) * 1968-08-05 1971-02-16 Hughes Aircraft Co Method of making semiconductor devices with ion beams
US3719893A (en) * 1971-12-23 1973-03-06 Us Navy System and method for accelerating charged particles utilizing pulsed hollow beam electrons

Cited By (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4173944A (en) * 1977-05-20 1979-11-13 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh Silverplated vapor deposition chamber
US4179530A (en) * 1977-05-20 1979-12-18 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh Process for the deposition of pure semiconductor material
US4197175A (en) * 1977-06-01 1980-04-08 Balzers Aktiengesellschaft Method and apparatus for evaporating materials in a vacuum coating plant
US4100055A (en) * 1977-06-10 1978-07-11 Varian Associates, Inc. Target profile for sputtering apparatus
USRE32849E (en) * 1978-04-13 1989-01-31 Litton Systems, Inc. Method for fabricating multi-layer optical films
US4142958A (en) * 1978-04-13 1979-03-06 Litton Systems, Inc. Method for fabricating multi-layer optical films
US4690744A (en) * 1983-07-20 1987-09-01 Konishiroku Photo Industry Co., Ltd. Method of ion beam generation and an apparatus based on such method
US4885070A (en) * 1988-02-12 1989-12-05 Leybold Aktiengesellschaft Method and apparatus for the application of materials
US4952294A (en) * 1988-03-15 1990-08-28 Collins George J Apparatus and method for in-situ generation of dangerous polyatomic gases, including polyatomic radicals
US5059292A (en) * 1989-02-28 1991-10-22 Collins George J Single-chamber apparatus for in-situ generation of dangerous polyatomic gases and radicals from a source material contained within a porous foamed structure
US5459296A (en) * 1990-12-15 1995-10-17 Sidmar N.V. Method for the low-maintenance operation of an apparatus for producing a surface structure, and apparatus
EP0549246B1 (en) * 1991-12-27 2003-10-15 Honeywell International Inc. Multilayer film materials system
EP0549246A2 (en) * 1991-12-27 1993-06-30 Johnson Matthey Public Limited Company Multilayer film materials system
US5415753A (en) * 1993-07-22 1995-05-16 Materials Research Corporation Stationary aperture plate for reactive sputter deposition
US5601654A (en) * 1996-05-31 1997-02-11 The Regents Of The University Of California, Office Of Technology Transfer Flow-through ion beam source
US6051115A (en) * 1996-07-16 2000-04-18 Korea Institute Of Science And Technology Adhesive strength increasing method for metal thin film
US6132805A (en) * 1998-10-20 2000-10-17 Cvc Products, Inc. Shutter for thin-film processing equipment
WO2000023633A1 (en) * 1998-10-20 2000-04-27 Cvc Products, Inc. Shutter for thin-film processing equipment
US20060099341A1 (en) * 2003-04-11 2006-05-11 Rudolf Beckmann High frequency plasma jet source and method for irradiating a surface
US20070163503A1 (en) * 2006-01-17 2007-07-19 Mitsubishi Heavy Industries, Ltd. Thin film preparation apparatus
CN104508174A (en) * 2012-07-27 2015-04-08 瓦里安半导体设备公司 Three-dimensional metal deposition technique
US20140027274A1 (en) * 2012-07-27 2014-01-30 Varian Semiconductor Equipment Associates, Inc. Three Dimensional Metal Deposition Technique
KR20150038269A (en) * 2012-07-27 2015-04-08 베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크. Three dimensional metal deposition technique
US9136096B2 (en) * 2012-07-27 2015-09-15 Varian Semiconductor Equipment Associates, Inc. Three dimensional metal deposition technique
TWI551707B (en) * 2012-07-27 2016-10-01 瓦里安半導體設備公司 Sputtering system and plasma processing apparatus
CN104508174B (en) * 2012-07-27 2017-03-22 瓦里安半导体设备公司 Plasma processing apparatus and sputtering coating system
CN103474318A (en) * 2013-10-10 2013-12-25 大连交通大学 Sputtering ion gun
CN111886360A (en) * 2017-12-22 2020-11-03 地质研究院及核科学有限公司 Ion beam sputtering apparatus and method
US20210104380A1 (en) * 2017-12-22 2021-04-08 Institute Of Geological And Nuclear Sciences Limited Ion beam sputtering apparatus and method
EP3728685A4 (en) * 2017-12-22 2021-10-13 Institute Of Geological And Nuclear Sciences Limited Ion beam sputtering apparatus and method
CN111886360B (en) * 2017-12-22 2022-08-26 地质研究院及核科学有限公司 Ion beam sputtering apparatus and method

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DE2407924A1 (en) 1974-08-22
FR2218652B1 (en) 1976-09-10
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FR2218652A1 (en) 1974-09-13

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