FR2218652B1 - - Google Patents

Info

Publication number
FR2218652B1
FR2218652B1 FR7305937A FR7305937A FR2218652B1 FR 2218652 B1 FR2218652 B1 FR 2218652B1 FR 7305937 A FR7305937 A FR 7305937A FR 7305937 A FR7305937 A FR 7305937A FR 2218652 B1 FR2218652 B1 FR 2218652B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7305937A
Other versions
FR2218652A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR7305937A priority Critical patent/FR2218652B1/fr
Priority to US442623A priority patent/US3895602A/en
Priority to JP49018161A priority patent/JPS49114583A/ja
Priority to DE19742407924 priority patent/DE2407924A1/de
Publication of FR2218652A1 publication Critical patent/FR2218652A1/fr
Application granted granted Critical
Publication of FR2218652B1 publication Critical patent/FR2218652B1/fr
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/46—Sputtering by ion beam produced by an external ion source
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/20—Ion sources; Ion guns using particle beam bombardment, e.g. ionisers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Combustion & Propulsion (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
FR7305937A 1973-02-20 1973-02-20 Expired FR2218652B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR7305937A FR2218652B1 (fr) 1973-02-20 1973-02-20
US442623A US3895602A (en) 1973-02-20 1974-02-14 Apparatus for effecting deposition by ion bombardment
JP49018161A JPS49114583A (fr) 1973-02-20 1974-02-16
DE19742407924 DE2407924A1 (de) 1973-02-20 1974-02-19 Vorrichtung zur herstellung eines ueberzugs durch ionenbeschuss

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7305937A FR2218652B1 (fr) 1973-02-20 1973-02-20

Publications (2)

Publication Number Publication Date
FR2218652A1 FR2218652A1 (fr) 1974-09-13
FR2218652B1 true FR2218652B1 (fr) 1976-09-10

Family

ID=9115106

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7305937A Expired FR2218652B1 (fr) 1973-02-20 1973-02-20

Country Status (4)

Country Link
US (1) US3895602A (fr)
JP (1) JPS49114583A (fr)
DE (1) DE2407924A1 (fr)
FR (1) FR2218652B1 (fr)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4173944A (en) * 1977-05-20 1979-11-13 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh Silverplated vapor deposition chamber
US4179530A (en) * 1977-05-20 1979-12-18 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh Process for the deposition of pure semiconductor material
CH631743A5 (de) * 1977-06-01 1982-08-31 Balzers Hochvakuum Verfahren zum aufdampfen von material in einer vakuumaufdampfanlage.
US4100055A (en) * 1977-06-10 1978-07-11 Varian Associates, Inc. Target profile for sputtering apparatus
USRE32849E (en) * 1978-04-13 1989-01-31 Litton Systems, Inc. Method for fabricating multi-layer optical films
US4142958A (en) * 1978-04-13 1979-03-06 Litton Systems, Inc. Method for fabricating multi-layer optical films
US4259145A (en) * 1979-06-29 1981-03-31 International Business Machines Corporation Ion source for reactive ion etching
US4690744A (en) * 1983-07-20 1987-09-01 Konishiroku Photo Industry Co., Ltd. Method of ion beam generation and an apparatus based on such method
US4885070A (en) * 1988-02-12 1989-12-05 Leybold Aktiengesellschaft Method and apparatus for the application of materials
US4952294A (en) * 1988-03-15 1990-08-28 Collins George J Apparatus and method for in-situ generation of dangerous polyatomic gases, including polyatomic radicals
DE3834318A1 (de) * 1988-10-08 1990-04-12 Leybold Ag Vorrichtung zum aufbringen dielektrischer oder metallischer werkstoffe
US5059292A (en) * 1989-02-28 1991-10-22 Collins George J Single-chamber apparatus for in-situ generation of dangerous polyatomic gases and radicals from a source material contained within a porous foamed structure
DE4040201C2 (de) * 1990-12-15 1994-11-24 Hell Ag Linotype Verfahren zum wartungsarmen Betrieb einer Vorrichtung zur Herstellung einer Oberflächenstruktur und Vorrichtung zur Durchführung des Verfahrens
DE69233233T2 (de) * 1991-12-27 2004-08-26 Honeywell International Inc. Anordnung mehrschichtiger Filmmaterialien
US5415753A (en) * 1993-07-22 1995-05-16 Materials Research Corporation Stationary aperture plate for reactive sputter deposition
US5601654A (en) * 1996-05-31 1997-02-11 The Regents Of The University Of California, Office Of Technology Transfer Flow-through ion beam source
KR100203377B1 (ko) * 1996-07-16 1999-06-15 박원훈 금속박막의 접착력 증대 방법
US6132805A (en) * 1998-10-20 2000-10-17 Cvc Products, Inc. Shutter for thin-film processing equipment
DE10317027A1 (de) * 2003-04-11 2004-11-11 Leybold Optics Gmbh Hochfrequenz-Plasmastrahlquelle und Verfahren zum Bestrahlen einer Oberfläche
JP4405973B2 (ja) * 2006-01-17 2010-01-27 キヤノンアネルバ株式会社 薄膜作製装置
US9136096B2 (en) * 2012-07-27 2015-09-15 Varian Semiconductor Equipment Associates, Inc. Three dimensional metal deposition technique
CN103474318A (zh) * 2013-10-10 2013-12-25 大连交通大学 溅射离子枪
CN111886360B (zh) * 2017-12-22 2022-08-26 地质研究院及核科学有限公司 离子束溅射设备和方法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL100028C (fr) * 1940-02-19 1900-01-01
US2420722A (en) * 1942-12-11 1947-05-20 Bausch & Lomb Apparatus for coating surfaces
US2463180A (en) * 1943-04-29 1949-03-01 Bell Telephone Labor Inc Method and apparatus for making mosaic targets for electron beams
US2771568A (en) * 1951-01-31 1956-11-20 Zeiss Carl Utilizing electron energy for physically and chemically changing members
US3087838A (en) * 1955-10-05 1963-04-30 Hupp Corp Methods of photoelectric cell manufacture
NL245698A (fr) * 1958-11-25
US2961559A (en) * 1959-08-28 1960-11-22 Jr John Marshall Methods and means for obtaining hydromagnetically accelerated plasma jet
US3005931A (en) * 1960-03-29 1961-10-24 Raphael A Dandl Ion gun
US3205087A (en) * 1961-12-15 1965-09-07 Martin Marietta Corp Selective vacuum deposition of thin film
US3238413A (en) * 1962-05-31 1966-03-01 Thom Karlheinz Magnetically controlled plasma accelerator
US3347701A (en) * 1963-02-05 1967-10-17 Fujitsu Ltd Method and apparatus for vapor deposition employing an electron beam
US3310424A (en) * 1963-05-14 1967-03-21 Litton Systems Inc Method for providing an insulating film on a substrate
US3326178A (en) * 1963-09-12 1967-06-20 Angelis Henry M De Vapor deposition means to produce a radioactive source
GB1039691A (en) * 1964-03-17 1966-08-17 Gen Precision Inc Vacuum coating and ion bombardment apparatus
FR1459893A (fr) * 1964-08-22 1966-06-17 Balzers Hochvakuum Procédé de production des couches minces par dépôt à l'aide de pulvérisation
DE1515318A1 (de) * 1964-12-28 1969-07-31 Hermsdorf Keramik Veb Einrichtung zur Herstellung duenner Schichten auf einem Traeger mittels Ionenstrahl-Zerstaeubung
FR1483391A (fr) * 1966-06-15 1967-06-02 Ion Physics Corp Procédé et appareil pour former des dépôts sous vide poussé
US3516855A (en) * 1967-05-29 1970-06-23 Ibm Method of depositing conductive ions by utilizing electron beam
US3563809A (en) * 1968-08-05 1971-02-16 Hughes Aircraft Co Method of making semiconductor devices with ion beams
US3719893A (en) * 1971-12-23 1973-03-06 Us Navy System and method for accelerating charged particles utilizing pulsed hollow beam electrons

Also Published As

Publication number Publication date
US3895602A (en) 1975-07-22
DE2407924A1 (de) 1974-08-22
JPS49114583A (fr) 1974-11-01
FR2218652A1 (fr) 1974-09-13

Similar Documents

Publication Publication Date Title
AR201758A1 (fr)
AU476761B2 (fr)
AU465372B2 (fr)
AU474593B2 (fr)
AU474511B2 (fr)
FR2218652B1 (fr)
AU474838B2 (fr)
AU471343B2 (fr)
AU465453B2 (fr)
AU465434B2 (fr)
AU450229B2 (fr)
AU476714B2 (fr)
AU472848B2 (fr)
AU476696B2 (fr)
AU466283B2 (fr)
AU477823B2 (fr)
AU447540B2 (fr)
AR193950A1 (fr)
AU471461B2 (fr)
AU461342B2 (fr)
AU477824B2 (fr)
AU476873B1 (fr)
AR210729A1 (fr)
AU1891376A (fr)
BG19750A1 (fr)

Legal Events

Date Code Title Description
ST Notification of lapse