TW490714B - Film formation apparatus and method for forming a film - Google Patents

Abstract

An apparatus for forming a film having high uniformity in its film thickness distribution is provided. An evaporation source is used in which an evaporation cell, or a plurality of evaporation cells, having a longitudinal direction is formed, and by moving the evaporation source in a direction perpendicular to the longitudinal direction of the evaporation source, a thin film is deposited on a substrate. By making the evaporation source longer, the uniformity of the film thickness distribution in the longitudinal direction is increased. The evaporation source is moved, film formation is performed over the entire substrate, and therefore the uniformity of the film thickness distribution over the entire substrate can be increased.

Description

490714

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus or method for forming a thin film for manufacturing an EL (Electro Luminescence) element. The element [E element has a cathode, an anode, and sandwiched between the cathode and the anode. A structure composed of a light emitting material, which is an organic material (hereinafter referred to as an organic EL material) that emits light by itself, and e ^ (electroluminescence) is obtained from the material. 2 · Description of related technologies There are two types of EL display devices: passive type (simple matrix type) and active type (active matrix type). Both types are actively investigated. In particular, the active matrix type EL display device is the focus of attention in the current industry. In particular, organic materials and inorganic materials can be used as EL materials, which become the light emitting layer of EL elements. In addition, organic materials are divided into low molecular weight (monomer) organic EL materials and high molecular weight ( Polymer) Organic EL materials. Both have been actively investigated, but films of low molecular weight organic EL materials are mainly formed by evaporation, and films of high molecular weight organic EL materials are mainly formed by coating. In order to manufacture a color EL display device, it is necessary to form a thin film of EL material that emits a different color for each pixel. However, in general, eL materials are weak with respect to water and oxygen, and cannot be patterned by lithographic etching. Therefore, it is necessary to form a pattern while forming a thin film. The most common method is to form a thin metal plate or glass plate between the substrate on which the thin film is formed and the evaporation source, and in which a paper size applicable national national standard (CNS) A4 specification (210X 297) is formed. Public envy) (Please read the notes on the back before filling this page) C. Order printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs -4- 490714 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economy A7 B7 2) A method of opening a photomask. In this example, the evaporated EL material from the evaporation source passes through only the opening portion, thereby selectively forming a thin film, and thus it is possible to form a thin film in which thin film formation and patterning are performed simultaneously. With a conventional evaporation device, EL material from an evaporation source flies away in the shape of radiation and accumulates on a substrate to form a thin film. Therefore, considering the distance covered by the EL material, a way to place the substrate is designed. . For example, a method comprising fixing the substrate to a conical substrate holder so that the distances from the evaporation source to the substrate are equal is implemented. However, when a multiple beveled method for manufacturing a plurality of plates on a large substrate is used, if the above method is implemented, the substrate holder becomes excessively large, and this causes the body of the film forming apparatus to become too large. Furthermore, when using a single wafer process, the substrate is flat, so the distance from the evaporation source in the surface of the substrate is unequal. One problem with this phenomenon is that it is difficult to deposit a uniform film thickness. In addition, when a large substrate is used, if the distance between the evaporation source and the shadow mask is not made larger, the evaporated EL material cannot be sufficiently dispersed, making it difficult to form a uniform surface across the substrate Sentence film. Maintaining this distance also makes the device larger. SUMMARY OF THE INVENTION The present invention is directed to the above problems, and an object of the present invention is to provide a film forming apparatus capable of forming a thin film having a highly uniform thin film thickness distribution at a high yield. Furthermore, an object of the present invention is to provide a paper size applicable to the Chinese National Standard (CNS) A4 specification (210 × 297 mm) 丨 ^ _— * ---- 装 ---- ^ --- Order— ----- (Please read the precautions on the back before filling this page)-5- 490714 A7 _______B7_ V. Description of the invention (3) A method for forming a thin film using the film forming apparatus of the present invention. (Please read the precautions on the back before filling this page) The present invention uses an evaporation source, in which one or more evaporation cells with a vertical direction (a portion where the thin film material for evaporation is placed) are formed . By moving the evaporation source in a direction perpendicular to the longitudinal direction of the evaporation source, a thin film is formed. Note that "having a longitudinal direction" represents a long and thin rectangle, a long and thin ellipse, or a linear shape. Since the processing can be performed in a single scan, the length of the substrate in the longitudinal direction is preferably longer than one side in the present invention. In particular, the length may be 300 mm to 120,000 mm (typically between 600 and 800 mm). The positional relationship between the evaporation source and the substrate of the present invention is shown in Figs. 1A to 1C. Fig. 1A is a top view, Fig. 1B is a cross-sectional view of Fig. 1A along the line segment A-A ', and Fig. 1C is a cross-sectional view of Fig. 1A along the line segment B-B1. Note that Figures 1 A to 1 C use common symbols. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, as shown in Figure 1A, the shadow image mask 102 is placed under the substrate 101, and a plurality of evaporating cells are arranged in a rectangle in a straight line. The evaporation source 104 is placed under the shadow image mask 102. It is noted that in this specification, the term substrate includes a substrate and a thin film formed on the substrate. Further, the term substrate surface represents the surface of the substrate on which the film is formed. The length of the evaporation source 104 is longer than the length of one side of the substrate 100, and one of the evaporation sources 104 is moved in the direction shown by the arrow (a direction perpendicular to the longitudinal direction of the evaporation source 104). The agency was prepared. Then by moving the evaporation source 104, a thin film can be formed. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X 297 mm) '490714 A7 ___B7 V. Description of the invention (4) (Please read the back first (Please fill in this page again) on the entire surface of the substrate. Note that when the length in the longitudinal direction is shorter than the length of one side of the substrate, the thin film can be formed by repeating the scanning several times. In particular, it is possible to form a laminate of the same thin film by repeatedly moving the evaporation source 104. The thin film material evaporated by each evaporation cell 103 is spread in an upward direction, passes through an opening portion (not shown in the figure) formed in the shadow image mask 102, and accumulates on the substrate 101. . The thin film is thereby selectively deposited on the substrate 101. The thin film material spread from a vapor cell 103 forms a thin film in a region, and the thin film material spread from an adjacent black cell 103 forms a thin film in another region, and the two regions overlap. The thin film is formed in a rectangular area by overlapping the area in which the thin film is deposited on each other. Therefore, the present invention can greatly improve the uniformity of the thickness of the film by using an evaporation source having a plurality of evaporating cells arranged, and by radiating from a row rather than a point as conventionally. In addition, by moving the rectangular evaporation source below the surface of the substrate, film formation can be performed at high yields. Printed by the Industrial Property Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. In addition, the present invention does not require a longer distance between the evaporation source 104 and the shadow image mask 102, and evaporation can be performed in a very close state. . This is because a plurality of evaporation cells are formed in an aligned manner, and even if the spreading distance of the film is short, the film formation can be performed simultaneously from the central portion to the edge portion of the substrate. This effect increases as the density of the evaporating cells 103 increases. The distance from the evaporation source 104 to the shadow image mask 102 is no special paper. The Chinese paper standard (CNS) A4 specification (210X297 male foot) 490714 A7 B7 is used. 5. Description of the invention (5) ιϋϋ · ^ ϋϋ mil mu —La ··-—.1 ϋιϋ 1 ^^^ i— ϋ-i (Please read the precautions on the back before filling this page) It is restricted in other places because of its density of apparent evaporation cells 1 0 3 But different. However, if the distance is too close, it will be difficult to form a uniform film from the central portion to the edge portion; and if the distance is too far, it will be no different from the traditional evaporation from a point of radiation. Therefore, if the distance between the evaporation cells 103 is "a", it is preferable to set the distance between the evaporation source 104 and the shadow image mask 102 to 2a to 100a (more preferably 5 a to 50 a) With the thin film forming apparatus of the present invention structured as described above, by using the evaporation source and moving the evaporation source over the area, a uniform film thickness distribution in a rectangular, oval, or linear area Being maintained, it is possible to form a thin film having high uniformity over the entire surface of the substrate. In particular, evaporation does not occur from one point, so the distance between the evaporation source and the substrate can be made shorter, and the uniformity of the film thickness can be further improved.

Printed by the Consumer Cooperative of the Intellectual Property Bureau of the LP Ministry of Economic Affairs Further, it is effective to add a plasma generating device to a room in the film forming equipment of the present invention. By performing a plasma procedure in accordance with oxygen or a plasma procedure in accordance with chlorine-containing gas, the film deposited on the wall of the chamber can be removed, and cleaning of the interior of the chamber can be performed. Parallel plate electrodes may be formed in the chamber, and a plasma may be generated between the plates as a means for generating the plasma. The diagram is described in the drawings: Figures 1 A to 1 C are diagrams showing the structure of an evaporation source; this paper size applies the Chinese National Standard (CNS) A4 specification (21〇 > < 297 mm)- 8- 490714 A7 B7 V. Description of the invention (6) Figures 2 A and 2 B are diagrams showing the structure of an evaporation chamber; Figure 3 is a diagram showing the structure of an evaporation chamber; Figure 4 is a film forming equipment FIG. 5 is a diagram showing the structure of a film forming apparatus; FIG. 6 is a diagram showing the structure of a film forming apparatus; FIG. 7 is a diagram showing the structure of a film forming apparatus; FIG. 8 It is a diagram showing the structure of a film forming apparatus. Comparison table of main components (please read the notes on the back before filling this page) Printed by the Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs 1 〇1 Substrate 1 〇2 Shadow image mask 1 〇3 Evaporation cell 1 〇4 Evaporation source 2 〇1 Chamber 2 〇2 Matrix conveyor opening 2 〇3 Matrix 2 〇4 Matrix holder 2 〇5 a Conveyor track 2 〇5 b 冃 丨 j Head 2 0 6 Film forming section 2 〇Photomask holder 2 〇 8 Shade image mask 2 〇9 open □ part 210 electromagnet This paper size applies to Chinese National Standard (CNS) A4 specification (21〇 × 297 mm) -9- 490714 A7 B7 V. Description of the invention (7) 211 Evaporation cell (Please read the precautions on the back before filling in this page) 212 Evaporation source 2 13 Arrow 3〇1 Protrusion 4 0 1 Protrusion 500a Gate. 500b Gate 500c Gate 500 ° Gate 5 0 0 e Gate 5 0 1 Conveyor room 502 Conveyor mechanism 5 0 3 Substrate 504 Loading chamber 505 Processing chamber 506 Evaporation chamber 508 Preparation room Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs Employee Cooperative 509 Evaporation chamber 51 0 Film forming part 511 Adhering chamber 512 UV radiation mechanism 513 Conveying chamber 514 Conveyor mechanism 600a Gate This paper size is applicable to China National Standard (CNS) A4 (210X 297 mm) -10-490714 A7 B7 V. Invention Explanation (8) 6 〇〇b gate 6 〇〇 C gate 6 〇 0 d gate 6 〇e gate 6 〇 1 conveyor chamber 6 〇 2 conveyor mechanism 6 〇 3 matrix 6 〇 4 loading chamber 6 〇 5 pretreatment Room 6 〇6 Evaporation chamber 6 〇7 Thin film forming part 6 〇8 Evaporation chamber 6 〇9 Thin film forming part (Please read the precautions on the back before filling this page) Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs and Consumer Cooperatives -11-490714 A7 B7 V. Description of the invention (9) 72 Turbo molecular pump 7 3 valve (please read the precautions on the back before filling this page) 7 4 Rotary pump 702 Pretreatment chamber 7 0 0 b Exhaust system 7 0 3 Evaporation chamber 700c Evacuation system 7 0 6 Evaporation chamber 7 0 7 Evaporation chamber 7 0 8 Evaporation chamber 7009 Evaporation chamber 710 Closet chamber 711 Unloading chamber 8〇1 Loading chamber 800a System 8 1 Valve 8 2 Turbomolecular Pump Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs Employee Consumption Cooperatives 8 3 Valve 84 Rotary Pump 802 Pretreatment Chamber 800 b Discharge System 803 Evaporation Chamber 800c Discharge System 806 Storage Room Paper Size Applicable to China National Standard (CNS) A4 specification (210X 297mm) -12-490714 A7 B7 V. Description of the invention (1 () 807 Closet room 808 Unloading room (Please read the precautions on the back before filling this page) DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiment Mode FIGS. 2A and 2B show the structure of an evaporation chamber prepared in a film forming apparatus of the present invention. Fig. 2A is a top view of the evaporation chamber, and Fig. 2B is a sectional view. Note that common parts use common symbols. Further, an example of forming an EL (electroluminescence) film as a film is shown in the embodiment mode. In FIG. 2A, reference numeral 201 denotes a chamber, and reference numeral 202 denotes a substrate conveyer opening from which the substrate is transported to the inside of the chamber 201. The transported substrate 2 03 is set in the substrate holder 2 0 4 and is transported into the film forming portion 2 6 by the conveyor rail 2 5 a as shown by the arrow 2 5b. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. When the substrate 203 is transported to the film forming portion 206, the shadow image mask 208 fixed to the mask holder 207 is close to the substrate 203. Note that, in this embodiment mode, a metal plate is used as a material of the shadow image mask 208. (See FIG. 2B) In addition, the opening portion 209 in the shadow image mask 208 in this embodiment mode is formed to have a rectangular shape, an oval shape, or a linear shape. Of course, the shape of the openings is not limited, and a matrix shape or a net shape may be formed. Here in this embodiment mode, this is a structure in which a calcium carbide 2 1 0 is placed close to the substrate 2 3, as shown in FIG. 2B. When the paper size of the electromagnet is in accordance with Chinese National Standard (CNS) A4 (210X297 mm) " " When a magnetic field is formed at 10, the shadow image mask 208 is brought to the substrate 203 and is maintained at a predetermined distance. This pitch is fixed by a plurality of protrusions 301 formed in the shadow image mask 208, as shown in FIG. This type of structure is particularly effective when the substrate 203 is a large substrate exceeding 300 mm. If the substrate 203 is of a large size, the distortion (bending) is caused by the weight of the substrate itself. However, the substrate 2 03 can also be pulled toward the electromagnet 2 10, and as long as the shadow image mask 2 8 is pulled by the electromagnet 2 1 0 toward the substrate 2 3 side, the bending can be offset. Note that, as shown in FIG. 4, it is preferable to form the protrusion 4 01 in the electromagnet 2 10, and to maintain the distance between the substrate 2 03 and the electromagnet 2 10. When the distance between the substrate 2 3 and the shadow image mask 2 8 is fixed, an evaporation source 2 1 2 having a vertical evaporation cell 2 1 1 formed thereon is moved in the direction of the arrow 2 1 3 . +. By being heated while being moved, the EL material formed in the interior of the evaporation cell is evaporated, and is dispersed in the chamber of the film forming portion 206. Note that in the example of the present invention, the distance between the evaporation source 2 1 2 and the substrate 2 0 3 can be kept very short, so the driving part of the EL material for the indoor driving part (driving evaporation source, substrate holder or photomask) Adsorption of part of the holder can be minimized. The evaporation source 2 1 2 is scanned from one end of the substrate 2 03 to the other end. As shown in FIG. 2A, in the example of the present invention, the length of the evaporation source 2 1 2 in the longitudinal direction is sufficiently long, so that it can be moved across the entire surface of the substrate 2 0 by one scan. The size of this paper is applicable to China National Standard (CNS) A4 (210X 297 mm) I.— K -------- ^ Installation ---- „--- Order ------ (please first Read the notes on the back and fill in this page) -14- 490714 A7 B7 V. Description of the invention (1 uniformly formed in a thin film as described above from a red, green or blue EL material (here red), electromagnetic The magnetic field of iron 2 10 is turned off, the photogastric holder 2 07 is lowered, and the distance between the substrate 2 03 and the shadow image mask 2 082 is increased. Then the substrate holder 2 0 4 is moved by an image_ @ 分, the mask holding member 207 is raised again, and the shadow image mask 208¾ and the substrate 2 0 3 are moved close to each other. In addition, the electromagnet 2 1 0 forms a magnetic field, and the shadow image mask 2 0 8 and the substrate 2 0 Distortion of 3 (bending) eliminates the skin. Then the evaporation cells are altered and thin film formation of red, green or blue EL material (green here) is performed. Note that the matrix holder 2 is shown here 0 4 is moved by one pixel portion, but the mask holder 2 0 4 can also be moved by one pixel portion. In this type, all red and green colors are repeatedly formed. After the blue EL material film, the substrate 2 03 is finally moved to the substrate conveyor opening 2 2, and is removed from the chamber 2 1 by a robotic arm (not shown in the figure). Therefore, the EL is completed using the present invention Film formation of a thin film. Example 1 A film forming apparatus of the present invention is explained using FIG. 5. In FIG. 5, reference numeral 50 1 represents a conveyor chamber. A conveyor mechanism 502 is prepared in the conveyor chamber. 5 0 1 and transportation of the substrate 5 0 3 is carried out. The conveyor chamber 5 0 1 has a low-pressure environment and is connected to each processing chamber by a gate. When the gate is opened, the conveyor mechanism 5 0 2Transfer the substrate to each processing chamber. In addition, it is possible to use, for example, this paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) (Please read the precautions on the back before filling this page}

Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs -15- 490714 A7 B7 V. Description of the invention Reduce the pressure in the conveyor chamber by 501, but a low-temperature pump that is effective in removing moisture is preferred. (Please read the precautions on the back before filling this page.) The explanations for each processing chamber are described below. Note that the conveyor chamber 501 has a low-pressure environment, so a discharge pump (not shown) is installed in each processing chamber to be directly connected to the conveyor chamber 501. The above-mentioned oil seal rotates Pumps, mechanical booster pumps, turbomolecular pumps, and cryogenic pumps are used as exhaust pumps. First of all, the number 504 represents a loading chamber for matrix installation, and it is also a Unloading chamber. Loading chamber 504 is connected to the conveyor chamber 501 by a gate 501a, and a bracket (not shown in the figure) on which the substrate 503 is placed is installed on Here, note that the loading chamber 5 0 4 may also be separated into a base Loading chamber and a substrate unloading chamber. In addition, the above-mentioned discharge pump and flushing line for introducing high-purity nitrogen or inert gas are installed for the loading chamber 504. Printed by the 8th Industrial Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs It is to be noted that the substrate on which the process of forming a transparent conductive ytterbium film that becomes the cathode of the EL element is performed is used as the substrate 503 in Example 1. The substrate 503 is installed in a bracket, which The surface of the substrate on which the thin film is formed faces downward. This is to make it easier to make the face-down method (also referred to as the deposition-up method) when the thin film is formed by laser by evaporation. The face-down The method represents a method in which the surface of the substrate on which the film is to be formed is facing downward, and by this method, the adhesion of waste (grey dust) or the like can be suppressed. Then, reference numeral 5 0 5 represents a The size of the negative paper used to process the EL element is applicable to the Chinese National Standard (CNS) A4 specification (210X297). -16- 490714 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 5. Invention Description (M) The processing chamber on the surface of the electrode (cathode in Example 1), and the processing chamber 505 is connected to the conveyor chamber 501 by a gate 5 0 b. The processing chamber can be viewed according to the manufacturing process of the EL element However, subject to various changes, the heat treatment of the surface of the cathode fabricated from the transparent conductive film in Example 1 can simultaneously irradiate ultraviolet light between 100 and 120 ° C in oxygen. When the EL element is processed, This type of pretreatment is effective when the surface of the cathode is used. Next, reference numeral 506 represents an evaporation chamber for thin film deposition of organic EL materials by evaporation, and is called an evaporation chamber (a). The evaporation chamber (A) 5 0 6 is connected to the conveyor chamber 50 1 via a gate 5 0 0 c. In Example 1, an evaporation chamber having a structure shown in Figs. 2A and 2B was used as the evaporation chamber (A) 506. In the thin film forming portion 5 0 ·· of the evaporation chamber (A) 5 0 6, a hole injection layer is first deposited on the entire substrate surface, and then a light emitting layer for emitting red light is formed, and finally used for A light-emitting layer that emits blue light is formed. It is noted that any known material can be used as the hole injection layer, the red light emitting layer, the green light emitting layer, and the blue light emitting layer. 0 The evaporation chamber (A) 5 0 6 has an Structure that switches with the type of organic material. That is, the preparation chamber 508 for storing plural types of evaporation sources is connected to the evaporation chamber (A) 506, and the evaporation source switching is performed by an internal conveyor mechanism. Therefore, when the organic EL material used for film formation is changed, the evaporation source is changed. In addition, whenever the organic EL material used for film formation is switched, this paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) I-«Approved clothes» Order. (Please read the precautions on the back first (Fill in this page again) -17-490714 A7 B7 5. Description of the invention (15), the same mask as the shadow mask is moved by one pixel. It is noted that regarding the thin film formation procedure that occurs inside the evaporation chamber (A) 5 06, reference can be made to FIGS. 2A and 2B. (Please read the precautions on the back before filling in this page.) Second, reference numeral 509 denotes a conductive film (a metal film that becomes an anode is used in Example 1 to become a cathode or anode of an EL element by evaporation.) ), And is called an evaporation chamber (B). The evaporation chamber (B) 509 is connected to the conveyor chamber 501 via a gate 500 d. In Example 1, an evaporation chamber having a structure shown in FIGS. 2A and 2B is used as an evaporation chamber (B) 509. In the thin film forming portion 5 10 in the evaporation chamber (B) 509, an A 1-Li alloy thin film (aluminum and lithium alloy) is deposited as a conductive thin film, which becomes the anode of the EL element. Note that it is possible to co-evaporate elements from Group 1 or Group 2 of the Periodic Table and aluminum. Co-evaporation represents evaporation where the cells are heated simultaneously and different materials are bound together during the film formation stage. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. Next, the reference number 5 1 1 represents a closet (also known as a closed room or a ball box), and it is connected to the loading room 504 via a gate 5 0 e. . A final airtight sealing procedure for EL elements is performed in the sealing chamber 5 1 1. This procedure is a device that protects the formed EL element from oxygen and moisture, and uses a device that is mechanically adhered with a sealing material, or a device that is adhered with a thermosetting resin or an ultraviolet light curing resin. A mechanism for radiating ultraviolet light (hereinafter referred to as the ultraviolet radiation mechanism) 5 1 2 is formed in the interior of the close chamber 5 1 1, and the paper size shown in Figure 5 applies the Chinese National Standard (CNS) A4 specification ( 210 > < 297 mm 1 ~~ '-18- 490714 A7 B7 V. Description of the invention (16) (Please read the precautions on the back before filling this page) The film forming equipment shown has a structure in which one of the UV The photocurable resin is hardened by the ultraviolet light emitted from the ultraviolet radiation mechanism 5 1 2. In addition, it is possible to reduce the pressure inside the close chamber 5 1 1 by attaching a discharge pump. When using a robot When the above-mentioned sealing procedures are performed mechanically, the oxygen and moisture can be prevented from being mixed by performing these procedures under reduced pressure. Furthermore, it is possible to pressurize the inside of the sealing chamber 5 1 1. Add in this example It is pressurized with high-purity nitrogen or inert gas while venting, and the intrusion of pollutants from the atmosphere such as oxygen is prevented. Next, the transfer chamber (flow box) 5 1 3 is connected to the close chamber 5 1 1. Conveyor mechanism (B) 5 1 4 is formed in the conveying chamber 5 1 3, and the EL element thereon has been completely sealed in the close chamber 5 1 1. The substrate is conveyed to the conveying chamber 5 1 3. It is also possible to reduce the pressure of the transfer chamber 5 1 3 by attaching a discharge pump. The transfer chamber 5 1 3 is equipped so that the closet chamber 511 is not directly exposed to the atmosphere and the substrate is moved. From here. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. Because the processing can be done at a point where the EL element is completely sealed in an air tight space, it is possible to use the film shown in Figure 5. The device manufactures an EL display device with high reliability. Example 2 Using FIG. 6 An example in which a film forming apparatus of the present invention is used in a multi-chamber method (also referred to as a cluster tool method) is explained. In FIG. 6, reference is made to The number 6 0 1 represents a conveyor room. One lose Feeder mechanism (A) This paper size applies Chinese National Standard (CNS) A4 specification (210X 297 mm) -19- 490714 A7 B7__ V. Description of the invention (17) (Please read the notes on the back before filling in this education) 6 0 2 is prepared in the conveyor chamber 6 0 1 and the transport of the substrate 6 0 3 is carried out. The conveyor chamber 6 0 1 has a reduced pressure environment and is connected to each processing chamber via a gate. When When the gates are opened, the substrate is transported to each processing chamber by a conveyor mechanism (A). In addition, it is possible to use, for example, oil-sealed rotary pumps, mechanical booster pumps, and turbo molecular pumps. And low-temperature pump discharge pump to reduce the pressure in the conveyor chamber 601, but low-temperature pump effective in removing moisture is better. An explanation of each processing chamber is described below. Note that the conveyor chamber 601 has a low-pressure environment, so an exhaust pump (not shown) is installed in each processing chamber to be directly connected to the conveyor chamber 601. The above-mentioned oil-sealed rotary pump, mechanical booster pump, turbo-molecular pump, and low-temperature pump are used as discharge pumps. First, the reference number 604 represents a loading room for substrate installation, and it is also an unloading room. The loading chamber 604 is connected to the conveyor chamber 601 by a gate 600 a, and a bracket (not shown) on which the substrate 603 is placed is installed here. Note that the loading chamber 604 may also be separated into a substrate loading chamber and a substrate unloading chamber. In addition, the above-mentioned discharge pump and a flushing line for introducing high-purity nitrogen or inert gas are installed for the loading chamber 604. Next, reference numeral 605 denotes a pre-treatment chamber for processing the surface of the cathode or anode (cathode in the second embodiment) of the EL element, and the pre-treatment chamber 6 0 5 is closed by a gate 6 0 0 b. Connected to the conveyor chamber 601. The processing room can be subjected to various different depending on the manufacturing process of the EL element. This paper size applies Chinese National Standard (CNS) A4 specification (210X297 male sauce) " " '^ -20-490714 A7 B7 V. Description of the invention (is) (Please read the precautions on the back before filling this page). Change: Change, the heat treatment on the surface of the cathode fabricated from the transparent conductive film in Example 2 can be performed in oxygen at 1000 and 12 °. (: UV light is emitted between the stomach and the stomach. This type of treatment is effective when the cathode surface of the EL element is treated. Next, reference numeral 6 0 6 represents an organic? L material for evaporation by evaporation. The evaporation chamber for thin film deposition is also referred to as the evaporation chamber (A). The evaporation chamber (A) 6 0 6 is connected to the conveyor chamber 6 0 1 via a gate 6 0 0 c. In Example 2, it has a display The evaporation chamber of the structure shown in Figs. 2a and 2B is used as the evaporation chamber (A) 6 0. In the thin film forming portion 6 0 7 of the evaporation chamber (A) 6 0, first-? L injection layer Is deposited on the entire surface of the substrate, and then a light emitting layer for emitting red light is formed. Therefore, with respect to the hole injection layer and the organic material of the red light emitting layer, each evaporation source and shadow image mask Both are provided with two types of materials and are structured to be switchable. Note that known materials can be used as the hole injection layer and the red light emitting layer. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Next, reference numeral 608 denotes an organic EL material for evaporation by evaporation. The evaporation chamber for thin film deposition is called the evaporation chamber (b). The evaporation chamber (B) 6 0 8 is connected to the conveyor chamber 6 0 1 through a gate 60 0 d. In Example 2, there is a display The evaporation chamber of the structure shown in FIGS. 2A and 2B is used as the evaporation chamber (B) 6 0. In Example 2, the thin film forming portion 6 0 9 of the evaporation chamber (B) 6 0 8 A light-emitting layer for emitting green light is deposited. It is noted that a known material can be used as the light-emitting layer for emitting green light in Example 2. Next, reference numeral 610 denotes a layer for evaporation by evaporation. Organic paper size applies Chinese National Standard (CNS) A4 specification (210X 297 mm) -21-490714 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention (19) Evaporation of thin film deposition of EL materials And is referred to as an evaporation chamber (c). The evaporation chamber (C) 6 1 0 is connected to the conveyor chamber 6 0 1 through a gate 60 0e. In Example 2, there is shown in FIG. 2A and The evaporation chamber of the structure 2 B is used as the evaporation chamber (C) 6 1 0. In the second embodiment, the evaporation chamber (C) 6 In the thin film forming portion 6 10 of 10, a light emitting layer for emitting blue light is deposited. It is noted that a known material can be used as the light emitting layer for emitting blue light in Example 2. Next, reference numeral 6 1 2 represents an evaporation chamber formed by a thin film of a conductive thin film (a metal thin film serving as an anode is used in Example 2) which becomes a cathode or an anode of an EL element by evaporation, and is called Is the evaporation chamber (D). The evaporation chamber (D) 6 1 2 is connected to the conveyor chamber 6 0 1 via a gate 60 0 f. In Example 2, an evaporation chamber having a structure shown in Figs. 2A and 2B is used as an evaporation chamber (D) 6 1 2. In the thin film forming portion 6 1 3 in the evaporation chamber (D) 6 1 2, an A 1-Li alloy thin film (aluminum and lithium alloy) is deposited as a conductive thin film, which becomes the anode of the EL element. It is noted that it is possible to co-evaporate an element from group 1 or group 2 of the periodic table and aluminum. Next, reference numeral 6 1 4 represents a closet chamber, and it is connected to the loading chamber 6 0 4 through a gate 600 g. Please refer to Example 1 for explanation of the close chamber 6 1 4. Further, similar to Example 1, an ultraviolet light radiating mechanism 6 1 2 is formed in the inside of the close chamber 6 1 4. In addition, the transfer chamber 6 1 6 is connected to the close chamber 6 1 5. Conveyor mechanism (B) 6 1 7 is formed in the conveying chamber 6 1 6 and the substrate on which the EL element has been completely sealed in the closet chamber 6 1 4 is conveyed to the conveying chamber. This paper is suitable for China National Standard (CNS) A4 specification (210X297 mm) --------, ---- 0 ^ ---- r--1T ------ (Please read the precautions on the back first (Fill in this page) -22- 490714 A7 B7 V. Description of the invention (20) 6 1 6 Example 1 may be referenced to explain the transfer chamber 6 1 6. Since the processing can be completed at a point where the EL element is completely sealed in an air-impermeable space, it is possible to manufacture a highly reliable EL display device using the film forming apparatus shown in Fig. 6. Embodiment 3 An example in which a film forming apparatus of the present invention is used in a one-line method using Fig. 7 is explained. In Fig. 7, reference numeral 701 represents a loading chamber, and the transportation of the substrate is performed here. The loading chamber 701 is equipped with a discharge system 700a, and the discharge system 70a has a first valve 71, a turbo molecular pump 7, a second valve 73, and a rotary pump (oil seal Rotary pump) 7 4 structure. The first valve 71 is a main valve. In some cases, it is also combined with a pilot valve, and in some cases, a butterfly valve is used. The second valve 73 is a valve in front, and the second valve 73 is opened first, and the loading chamber 7 01 is approximately decompressed by the rotary pump 74. The first valve 7 1 is then opened and the pressure is reduced by the turbo molecular pump 7 2 until a high vacuum is reached. Note that it is possible to use turbocharged or cryogenic pumps instead of turbo molecular pumps, but cryogenic pumps are particularly effective at removing water. Next, reference numeral 7 02 represents a pre-treatment chamber for processing the surface of the cathode or anode (cathode in Example 3) of the EL element, and the pre-treatment chamber 7 0 2 is equipped with a discharge system 7 0. b. In addition, it is hermetically separated from the loading chamber 701 by a gate not shown in the figure. The pre-treatment chamber 7 0 2 can be subjected to various kinds depending on the manufacturing process of EL components. This paper size applies the Chinese National Standard (CNS) A4 specification (210 × 297 male sauce) (Please read the precautions on the back before filling this page)

Printed by 1T Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs -23- 490714 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention (21) Modified, the cathode made from transparent conductive film in Example The heat treatment of the surface can be performed in the oxygen at a temperature between 1000 and 120 ° C while radiating ultraviolet light. Next, reference numeral 7 0 denotes an evaporation chamber for thin film deposition of an organic EL material by evaporation, and is referred to as an evaporation chamber (a). In addition, it is hermetically separated from the loading chamber 702 by a gate not shown in the figure. The evaporation chamber (A) 7 03 is equipped with a discharge system 7 0 c. In Example 3, a dark-haired room having a structure shown in Figs. 2A and 2B was used as an evaporation room (A) 703. The substrate 7 0 4 transported to the evaporation chamber (A) 7 0 3 and the evaporation source 7 0 5 equipped in the evaporation chamber (A) 7 0 3 were respectively moved in the directions shown by the arrows, and the thin film formation was get on. It is noted that the detailed operation of the evaporation chamber (A) 7 0 3 may be referred to Fig. 2 · a and 2 B. In Example 3, a hole injection layer was deposited in the evaporation chamber (a) 703. Known materials can be used as the hole injection layer. Next, reference numeral 7 06 represents an evaporation chamber for thin film deposition of organic EL materials by evaporation, and is referred to as an evaporation chamber (b). The evaporation chamber (B) 7 06 is equipped with a discharge system 700d. In addition, it is hermetically separated from the discharge chamber 703 by a gate not shown in the figure. In Example 3, the evaporation chamber having the structure shown in Figs. 2A and 2B was used as the evaporation chamber (B) 7 0 6. Therefore, the detailed operation of the evaporation chamber (B) 7 0 6 may refer to FIGS. 2A and 2B. In addition, a light emitting layer for emitting red light is deposited in the evaporation chamber (B) 7 0 6. Known materials can be used as light emitting red light. The paper size applies the Chinese National Standard (CNS) A4 specification (210 father 297 mm). I — · ---.---- pack --- -^ --- Order ------ (Please read the precautions on the back before filling out this page) -24- 490714 A7 _____B7___ V. Description of the invention (22) Shooting layer. (Please read the notes on the back before filling this page.) Next, reference numeral 7 0 7 represents an evaporation chamber for thin film deposition of organic EL materials by evaporation, and is called an evaporation chamber (C). The evaporation chamber (C) 707 is equipped with a discharge system 700 e. In addition, it is hermetically separated from the discharge chamber (B) 7 0 6 by a gate not shown in the figure. In Example 3, the evaporation chamber having the structure shown in FIGS. 2A and 2B is used as the evaporation chamber (C) 7 0 7. Therefore, the detailed operation of the evaporation chamber (C) 7 0 7 may refer to Figs. 2A and 2B. In addition, a light emitting layer for emitting green light is deposited in the evaporation chamber (C) 7 0 7. Known materials can be used as light emitting layers that emit green light. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. Next, reference numeral 7 0 denotes an evaporation chamber for thin film deposition of organic EL materials by evaporation, and is called an evaporation chamber (· d). The black hair room (D) 7 0 8 is equipped with an exhaust system 70 f. In addition, it is hermetically separated from the discharge chamber (C) 7 0 7 by a gate not shown in the figure. In Example 3, the evaporation chamber having the structure shown in Figs. 2a and 2B was used as the evaporation chamber (D) 708. Therefore, the detailed operation of the dark room (D) 7 0 8 may refer to Figs. 2a and 2B. In addition, a light emitting layer for emitting blue light is deposited in the evaporation chamber (D) 708. Known materials can be used as light emitting layers that emit blue light. Next, reference numeral 7 09 represents an evaporation chamber formed by a thin film of an electrically conductive thin film (a metal thin film that becomes an anode is used in Example 3) for becoming a cathode or an anode of an EL element by evaporation, and is called

-25- 490714 A7 B7 V. Description of the invention (Z3) is the evaporation chamber (E). The evaporation chamber (e) 709 is equipped with an exhaust system 700 g. In addition, it is hermetically separated from the discharge chamber (D) 708 by a gate not shown in the figure. In Example 3, the evaporation chamber having the structure shown in Figs. 2A and 2B is used as the evaporation chamber (e) 7 0 9. Therefore, the detailed operation of the evaporation chamber (D) 7 0 8 may be referred to FIGS. 2A and 2B. In the evaporation chamber (E) 709, an Al-Li alloy thin film (Ming and lithium alloy) is deposited as a conductive thin film, which becomes the anode of the EL element. It was noted that it is possible to co-evaporate elements from Group 1 or Group 2 of the Periodic Table as well as aluminum. Next, reference numeral 7 1 0 represents a closet, and it is equipped with an exhaust system 7 00 h. In addition, it is hermetically separated from the discharge chamber (E) 709 by a gate not shown in the figure. Please refer to Example 1 for the explanation of the close chamber 7 1 0. Further, similar to Example 1, an ultraviolet light radiation mechanism is formed in the inside of the close chamber 7 1 0. Finally, the number 711 represents a unloading chamber, and it is equipped with an exhaust system 700i. The matrix on which the EL element was formed was removed therefrom. Since the processing can be done at a point where the EL element is completely sealed in an air-impermeable space without being exposed to the atmosphere, it is possible to manufacture a high-reliability device using the film forming apparatus shown in FIG. 7 E l display device. According to this in-line method, it is possible to further manufacture an EL display device with a high yield. This paper size applies to China National Standard (CNS) A4 (210X 297 mm) (Please read the precautions on the back before filling this page). · 11, Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs, Consumer Cooperatives 26-490714 A7 ____B7_______ V. Description of the Invention (24) Example 4 An example in which a film forming apparatus of the present invention is used in an in-line method using FIG. 8 is explained. In Fig. 8, reference numeral 801 represents a loading chamber, and the transportation of the substrate is performed here. The loading chamber 8 0 1 is equipped with a ~ exhaust system 8 0 a, and the exhaust system 8 0 a has a first valve 8 1, a turbo molecular pump 8 2, a second valve 8 3, and a rotary pump. (Oil seal rotary pump) 8 4 structure. Next, reference numeral 8 02 represents a pretreatment chamber for treating the surface of a cathode or an anode (cathode in Example 4) of an EL element, and the pretreatment chamber 8 0 2 is equipped with a discharge system 8 0 0 b . In addition, it is hermetically separated from the loading chamber 801 by a gate not shown in the figure. '' The pre-treatment chamber 8 0 2 can be subjected to various changes depending on the manufacturing process of the EL element. The heat treatment of the surface of the cathode fabricated from the transparent conductive film in Example 4 can be performed in oxygen at 1 0 0 and 1 2 0 ° Simultaneous irradiation of ultraviolet light between C. Next, reference numeral 803 represents an evaporation chamber for thin film deposition of an organic EL material by evaporation, and the evaporation chamber 803 is equipped with an exhaust system 80c. In Example 4, an evaporation chamber having the structure shown in FIGS. 2A and 2B is used as the evaporation chamber 803. The substrate 8 0 4 sent to the evaporation chamber 8 0 3 and the evaporation source 8 0 5 equipped in the evaporation chamber 8 0 3 were moved in the directions shown by the arrows, respectively, and the film formation was performed. In Example 4, it is preferable to switch the evaporation source 8 0 3 or the shadow image mask 8 0 3 when thin film deposition is performed in the evaporation chamber 8 0 3 (not shown in this paper. The Chinese National Standard (CNS) A4 specification applies) (210X297 mm) (Please read the precautions on the back before filling out this page) Packing *-Printed by the 8th Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs -27- 490714 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs B7 V. Description of the invention (25)) to form a conductive thin film as a hole injection layer, a red light emitting layer, a green light emitting layer, a blue light emitting layer or an anode. In Example 4, the evaporation chamber 803 is connected to the storage chamber 806, and the evaporation source and the shadow image% cover are stored therein for proper switching. Next, reference numeral 807 represents a closet, and it is equipped with an exhaust system 800d. In addition, it is hermetically separated from the discharge chamber 803 by a gate not shown in the figure. For the explanation of the close chamber 8 0 7, refer to Example 1. Further, similar to Example 1, an ultraviolet light radiating mechanism (not shown in the figure) is formed in the inside of the close chamber 807. Finally, reference numeral 808 represents an unloading chamber, and it is equipped with an exhaust system 800 e. The matrix on which the EL element was formed was removed therefrom. Since the processing can be done at a point where the EL element is completely sealed in an air-impermeable space without being exposed to the atmosphere, it is possible to manufacture a highly reliable e L using the film forming apparatus shown in FIG. 8 Display device. According to this in-line method, it is possible to further manufacture an EL display device with a high yield. By using the film forming apparatus of the present invention, it becomes possible to form a thin film having a uniform mean film thickness distribution on a substrate surface at a high yield. This paper size applies to China National Standard (CNS) A4 specification (210X297 public holiday)!, ——----- # · ^ ---- Ί-I ^ ----- Fees (Please read the note on the back first (Please fill in this page again) -28-

Claims (1)

490714 A8 B8 C8 D8 6. Scope of Patent Application 1. A film-forming equipment, including: a vertical evaporation source; and (please read the precautions on the back before filling out this page) one perpendicular to the evaporation source The mechanism of vertical movement of this evaporation source. 2. The device according to item 1 of the patent application, wherein the evaporation source is provided with an evaporation cell having a vertical direction. 3. The device according to item 1 of the patent application scope, wherein the evaporation source is provided with a plurality of evaporation cells. 4. A film forming apparatus comprising:-an evaporation source having a longitudinal direction;-a mechanism for moving the evaporation source in a longitudinal direction perpendicular to the evaporation source; and an electromagnet formed above the mechanism. 5. The device according to item 4 of the scope of patent application, wherein the evaporation source is provided with an evaporation cell having a longitudinal direction. 6. The device according to item 4 of the patent application scope, wherein the evaporation source is provided with a plurality of evaporation cells. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 7-Seed film forming equipment including: a loading chamber; a conveyor chamber connected to the loading chamber; and an evaporation chamber connected to the conveyor chamber, wherein the The evaporation chamber contains an evaporation source having a longitudinal direction, and a mechanism for moving the evaporation source in a longitudinal direction perpendicular to the evaporation source. 8. If the equipment in the scope of patent application item 7, where the evaporation source is applicable to the Chinese paper standard (CNS) A4 (210X297 mm) 490714 A8 B8 C8 D8 ^, the scope of the patent application provides A vertical evaporation cell. (Please read the precautions on the back before filling out this page) 9. For the equipment in the scope of patent application item 7, the evaporation source is provided with a plurality of evaporation cells. 1.. — Seed film forming equipment, comprising: a loading chamber; a conveyor chamber connected to the loading chamber; and an evaporation chamber connected to the conveyor chamber, wherein the evaporation chamber contains an evaporation having a longitudinal direction A source, and a mechanism that moves the evaporation source in a longitudinal direction perpendicular to the evaporation source, and an electromagnet formed above the mechanism. 1 1 · The device according to item 10 of the patent application scope, wherein the evaporation source is provided with an evaporation cell having a longitudinal direction. 12. The device according to item 10 of the patent application scope, wherein the evaporation source is provided with a plurality of evaporation cells. 1 3. — Seed film forming equipment, including: a loading chamber; an unloading chamber printed by an employee consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs; and an evaporation chamber in which the loading chamber, the unloading chamber, and the evaporation chamber are connected in series, Moreover, the evaporation chamber contains an evaporation source having a longitudinal direction, and a mechanism for moving the evaporation source in a longitudinal direction perpendicular to the evaporation source. 14. The device according to item 13 of the patent application scope, wherein the evaporation source is provided with an evaporation cell having a longitudinal direction. i 5. If the equipment in the scope of patent application No. 13 is used, the paper size of this paper applies the Chinese National Standard (CNS) A4 specification (210X297 mm) -30- 490714 Α8 Β8 C8 D8 A plurality of evaporating cells are provided. 1 6 · — Seed film forming equipment, including: (Please read the precautions on the back before filling out this page) a loading chamber; an unloading chamber; and an evaporation chamber, where the loading chamber, the unloading chamber, and the evaporation chamber are connected in series Together, and therein, the evaporation chamber contains an evaporation source having a longitudinal direction, and a mechanism for moving the evaporation source in a longitudinal direction perpendicular to the evaporation source, and an electromagnet formed above the mechanism. ‘17. The device according to item 16 of the patent application scope, wherein the evaporation source is provided with an evaporation cell having a longitudinal direction. 18. The device according to item 16 of the patent application scope, wherein the evaporation source is provided with a plurality of evaporation cells. 19. A method for forming a thin film on a substrate, characterized in that an evaporation source having a longitudinal direction is moved in a direction perpendicular to the longitudinal direction of the evaporation source. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 20 — A method for forming a thin film on a substrate, which is characterized by moving an evaporation source having a longitudinal direction in a direction perpendicular to the longitudinal direction of the evaporation source, wherein The substrate and the shadow image mask made of metal are brought into contact with each other by the electromagnet. This paper uses China National Standard (CNS) A4 (210 × 297 mm)