TW478156B - Active matrix substrate and the manufacturing method therefor - Google Patents

Active matrix substrate and the manufacturing method therefor Download PDF

Info

Publication number: TW478156B
Authority: TW; Taiwan
Prior art keywords: electrode; film; layer; gate; protective film
Prior art date: 1999-10-26

Application number

TW089121918A

Other languages

English (en)

Chinese (zh)

Inventor

Hiroaki Tanaka

Hirotaka Yamaguchi

Wakahiko Kaneko

Michiaki Sakamoto

Satoshi Itoida

Original Assignee

Nippon Electric Co

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1999-10-26

Filing date

2000-10-19

Publication date

2002-03-01

Family has litigation

First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=26564004&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=TW478156(B) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.

2000-10-19 Application filed by Nippon Electric Co filed Critical Nippon Electric Co

2002-03-01 Application granted granted Critical

2002-03-01 Publication of TW478156B publication Critical patent/TW478156B/zh

Links

239000000758 substrate Substances 0.000 title claims abstract description 312
239000011159 matrix material Substances 0.000 title claims abstract description 218
238000004519 manufacturing process Methods 0.000 title claims abstract description 150
229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 93
239000010408 film Substances 0.000 claims description 497
239000010410 layer Substances 0.000 claims description 456
230000001681 protective effect Effects 0.000 claims description 197
238000003860 storage Methods 0.000 claims description 77
238000000034 method Methods 0.000 claims description 70
239000003990 capacitor Substances 0.000 claims description 53
239000004065 semiconductor Substances 0.000 claims description 24
230000005684 electric field Effects 0.000 claims description 20
239000011229 interlayer Substances 0.000 claims description 18
239000010409 thin film Substances 0.000 claims description 18
238000009413 insulation Methods 0.000 claims description 14
238000005530 etching Methods 0.000 claims description 12
239000000463 material Substances 0.000 claims description 12
OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 9
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
229910052698 phosphorus Inorganic materials 0.000 claims description 8
239000011574 phosphorus Substances 0.000 claims description 8
239000004575 stone Substances 0.000 claims description 5
238000009825 accumulation Methods 0.000 claims description 3
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
230000005611 electricity Effects 0.000 claims description 2
239000012528 membrane Substances 0.000 claims description 2
229910052710 silicon Inorganic materials 0.000 claims description 2
239000010703 silicon Substances 0.000 claims description 2
238000003892 spreading Methods 0.000 claims description 2
229910052814 silicon oxide Inorganic materials 0.000 claims 2
208000003251 Pruritus Diseases 0.000 claims 1
YZCKVEUIGOORGS-NJFSPNSNSA-N Tritium Chemical compound [3H] YZCKVEUIGOORGS-NJFSPNSNSA-N 0.000 claims 1
229910052769 Ytterbium Inorganic materials 0.000 claims 1
230000000739 chaotic effect Effects 0.000 claims 1
238000005520 cutting process Methods 0.000 claims 1
239000012044 organic layer Substances 0.000 claims 1
239000000047 product Substances 0.000 claims 1
239000000779 smoke Substances 0.000 claims 1
239000006228 supernatant Substances 0.000 claims 1
239000002344 surface layer Substances 0.000 claims 1
229910052722 tritium Inorganic materials 0.000 claims 1
NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 claims 1
230000000149 penetrating effect Effects 0.000 abstract description 4
238000002161 passivation Methods 0.000 abstract 5
239000004973 liquid crystal related substance Substances 0.000 description 43
229920002120 photoresistant polymer Polymers 0.000 description 33
238000010586 diagram Methods 0.000 description 30
229910052751 metal Inorganic materials 0.000 description 29
239000002184 metal Substances 0.000 description 29
230000015572 biosynthetic process Effects 0.000 description 16
229910004205 SiNX Inorganic materials 0.000 description 14
238000005516 engineering process Methods 0.000 description 14
238000001312 dry etching Methods 0.000 description 12
238000004544 sputter deposition Methods 0.000 description 12
229910052719 titanium Inorganic materials 0.000 description 12
229910052750 molybdenum Inorganic materials 0.000 description 11
229910052804 chromium Inorganic materials 0.000 description 10
238000000151 deposition Methods 0.000 description 10
150000002739 metals Chemical class 0.000 description 10
239000011521 glass Substances 0.000 description 8
238000005268 plasma chemical vapour deposition Methods 0.000 description 7
238000000926 separation method Methods 0.000 description 6
229910052681 coesite Inorganic materials 0.000 description 5
229910052906 cristobalite Inorganic materials 0.000 description 5
238000009826 distribution Methods 0.000 description 5
230000008569 process Effects 0.000 description 5
229910052682 stishovite Inorganic materials 0.000 description 5
229910052905 tridymite Inorganic materials 0.000 description 5
239000004925 Acrylic resin Substances 0.000 description 4
229920000178 Acrylic resin Polymers 0.000 description 4
230000007774 longterm Effects 0.000 description 4
229910052581 Si3N4 Inorganic materials 0.000 description 3
238000007796 conventional method Methods 0.000 description 3
230000000694 effects Effects 0.000 description 3
-1 nitride nitride Chemical class 0.000 description 3
239000011368 organic material Substances 0.000 description 3
238000007747 plating Methods 0.000 description 3
HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
239000004642 Polyimide Substances 0.000 description 2
230000008859 change Effects 0.000 description 2
230000008878 coupling Effects 0.000 description 2
238000010168 coupling process Methods 0.000 description 2
238000005859 coupling reaction Methods 0.000 description 2
230000008021 deposition Effects 0.000 description 2
239000012535 impurity Substances 0.000 description 2
238000002955 isolation Methods 0.000 description 2
239000007788 liquid Substances 0.000 description 2
230000007257 malfunction Effects 0.000 description 2
230000003071 parasitic effect Effects 0.000 description 2
230000002093 peripheral effect Effects 0.000 description 2
210000004508 polar body Anatomy 0.000 description 2
229920001721 polyimide Polymers 0.000 description 2
239000011241 protective layer Substances 0.000 description 2
229910052702 rhenium Inorganic materials 0.000 description 2
WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 2
239000000377 silicon dioxide Substances 0.000 description 2
235000012239 silicon dioxide Nutrition 0.000 description 2
239000002689 soil Substances 0.000 description 2
238000001039 wet etching Methods 0.000 description 2
229910052779 Neodymium Inorganic materials 0.000 description 1
241000283973 Oryctolagus cuniculus Species 0.000 description 1
229910052778 Plutonium Inorganic materials 0.000 description 1
239000000853 adhesive Substances 0.000 description 1
229910052782 aluminium Inorganic materials 0.000 description 1
229910052785 arsenic Inorganic materials 0.000 description 1
230000008901 benefit Effects 0.000 description 1
UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 1
210000000746 body region Anatomy 0.000 description 1
150000001875 compounds Chemical class 0.000 description 1
239000004020 conductor Substances 0.000 description 1
230000006866 deterioration Effects 0.000 description 1
238000009792 diffusion process Methods 0.000 description 1
PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
239000010931 gold Substances 0.000 description 1
229910052737 gold Inorganic materials 0.000 description 1
AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
239000012212 insulator Substances 0.000 description 1
238000012986 modification Methods 0.000 description 1
230000004048 modification Effects 0.000 description 1
QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
150000004767 nitrides Chemical class 0.000 description 1
OYEHPCDNVJXUIW-UHFFFAOYSA-N plutonium atom Chemical compound [Pu] OYEHPCDNVJXUIW-UHFFFAOYSA-N 0.000 description 1
238000009751 slip forming Methods 0.000 description 1
210000000952 spleen Anatomy 0.000 description 1
230000007480 spreading Effects 0.000 description 1
230000008719 thickening Effects 0.000 description 1

Classifications

- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134363—Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask

Landscapes

Physics & Mathematics (AREA)
Engineering & Computer Science (AREA)
Power Engineering (AREA)
General Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Nonlinear Science (AREA)
Mathematical Physics (AREA)
Chemical & Material Sciences (AREA)
Crystallography & Structural Chemistry (AREA)
Optics & Photonics (AREA)
Geometry (AREA)
Manufacturing & Machinery (AREA)
Liquid Crystal (AREA)
Thin Film Transistor (AREA)
Devices For Indicating Variable Information By Combining Individual Elements (AREA)

TW089121918A 1999-10-26 2000-10-19 Active matrix substrate and the manufacturing method therefor TW478156B (en)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP30468399		1999-10-26
JP2000308262A JP3391343B2 (ja)	1999-10-26	2000-10-06	アクティブマトリクス基板及びその製造方法

Publications (1)

Publication Number	Publication Date
TW478156B true TW478156B (en)	2002-03-01

Family

ID=26564004

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW089121918A TW478156B (en)	1999-10-26	2000-10-19	Active matrix substrate and the manufacturing method therefor

Country Status (4)

Country	Link
US (2)	US6674093B1 (ja)
JP (1)	JP3391343B2 (ja)
KR (1)	KR100393293B1 (ja)
TW (1)	TW478156B (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
CN102714220A (zh) *	2009-11-25	2012-10-03	夏普株式会社	移位寄存器和显示装置
TWI395307B (zh) *	2006-08-17	2013-05-01	Mitsubishi Heavy Ind Ltd	Semiconductor element module and manufacturing method thereof

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP3716755B2 (ja) *	2001-04-05	2005-11-16	株式会社日立製作所	アクティブマトリクス型表示装置
KR100776768B1 (ko) *	2001-07-21	2007-11-16	삼성전자주식회사	액정표시패널용 기판 및 그 제조방법
JP2004219991A (ja)	2002-12-27	2004-08-05	Sharp Corp	表示装置用基板およびこれを有する液晶表示装置
KR100598737B1 (ko) *	2003-05-06	2006-07-10	엘지.필립스 엘시디 주식회사	박막 트랜지스터 어레이 기판 및 그 제조 방법
US7119411B2 (en) *	2004-02-17	2006-10-10	Au Optronics Corp.	Interconnect structure for TFT-array substrate and method for fabricating the same
JP4073890B2 (ja) *	2004-04-22	2008-04-09	シャープ株式会社	薄膜回路基板、及びそれを備えた圧電式スピーカ装置及び表示装置並びに音源内蔵型表示装置
JP4066986B2 (ja) *	2004-08-31	2008-03-26	セイコーエプソン株式会社	減圧加熱による液晶抽出処理装置及びその方法
KR101172666B1 (ko) *	2005-09-29	2012-08-08	엘지디스플레이 주식회사	액정표시소자 및 그 제조방법
TWI297953B (en) *	2006-02-22	2008-06-11	Au Optronics Corp	Method for manufacturing a bottom substrate of a liquid crystal display device
US7952099B2 (en)	2006-04-21	2011-05-31	Beijing Boe Optoelectronics Technology Co., Ltd.	Thin film transistor liquid crystal display array substrate
CN100454559C (zh) *	2006-09-11	2009-01-21	北京京东方光电科技有限公司	一种tft矩阵结构及其制造方法
CN100454558C (zh) *	2006-09-11	2009-01-21	北京京东方光电科技有限公司	一种tft矩阵结构及其制造方法
CN100461433C (zh) *	2007-01-04	2009-02-11	北京京东方光电科技有限公司	一种tft阵列结构及其制造方法
TWI331401B (en) *	2007-04-12	2010-10-01	Au Optronics Corp	Method for fabricating a pixel structure and the pixel structure
TWI328788B (en) *	2008-03-11	2010-08-11	Au Optronics Corp	Gate driver-on-array and method of making the same
JPWO2010044289A1 (ja) *	2008-10-14	2012-03-15	シャープ株式会社	液晶表示装置
WO2011013561A1 (en)	2009-07-31	2011-02-03	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and method for manufacturing the same
JP5095865B2 (ja) *	2009-12-21	2012-12-12	シャープ株式会社	アクティブマトリクス基板及びそれを備えた表示パネル、並びにアクティブマトリクス基板の製造方法
TWI469356B (zh) *	2010-03-03	2015-01-11	Au Optronics Corp	薄膜電晶體及其製造方法
US8791463B2 (en) *	2010-04-21	2014-07-29	Sharp Kabushiki Kaisha	Thin-film transistor substrate
JP5609791B2 (ja) *	2011-06-29	2014-10-22	凸版印刷株式会社	液晶表示用の対向基板及び液晶表示装置
JP6076038B2 (ja) *	2011-11-11	2017-02-08	株式会社半導体エネルギー研究所	表示装置の作製方法
JP6059968B2 (ja) *	2011-11-25	2017-01-11	株式会社半導体エネルギー研究所	半導体装置、及び液晶表示装置
JP6033071B2 (ja)	2011-12-23	2016-11-30	株式会社半導体エネルギー研究所	半導体装置
US9099892B2 (en) *	2012-03-28	2015-08-04	Humless, Llc	Portable power systems
JP5838119B2 (ja)	2012-04-24	2015-12-24	株式会社ジャパンディスプレイ	薄膜トランジスタ及びそれを用いた表示装置
US8900938B2 (en) *	2012-07-02	2014-12-02	Shenzhen China Star Optoelectronics Technology Co., Ltd.	Manufacturing method of array substrate, array substrate and LCD device
KR101942489B1 (ko) *	2012-10-17	2019-01-28	삼성디스플레이 주식회사	박막 트랜지스터 기판 및 이를 포함하는 유기 발광 표시 장치
JP6501514B2 (ja)	2014-12-24	2019-04-17	三菱電機株式会社	薄膜トランジスタ基板およびその製造方法
JP2016076712A (ja) *	2015-11-09	2016-05-12	株式会社ジャパンディスプレイ	薄膜トランジスタ及びそれを用いた表示装置
CN108663864B (zh) *	2018-07-19	2021-01-26	京东方科技集团股份有限公司	一种显示面板及其制作方法、工作方法和显示装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2801104B2 (ja) *	1992-01-29	1998-09-21	シャープ株式会社	アクテイブマトリックス駆動方式散乱型液晶表示装置の製造方法
EP0588568B1 (en) *	1992-09-18	2002-12-18	Hitachi, Ltd.	A liquid crystal display device
US6211928B1 (en) *	1996-03-26	2001-04-03	Lg Electronics Inc.	Liquid crystal display and method for manufacturing the same
KR100223153B1 (ko)	1996-05-23	1999-10-15	구자홍	액티브 매트릭스 액정표시장치의 제조방법 및 액티브매트릭스액정표시장치
JPH1031231A (ja) *	1996-07-15	1998-02-03	Sony Corp	反射型ゲストホスト液晶表示装置及びその製造方法
KR100229613B1 (ko) *	1996-12-30	1999-11-15	구자홍	액정 표시 장치 및 제조 방법
DE69835888T2 (de) *	1997-04-11	2007-05-03	Hitachi, Ltd.	Flüssigkristallanzeigevorrichtung

2000
- 2000-10-06 JP JP2000308262A patent/JP3391343B2/ja not_active Expired - Lifetime
- 2000-10-19 TW TW089121918A patent/TW478156B/zh not_active IP Right Cessation
- 2000-10-24 KR KR10-2000-0062610A patent/KR100393293B1/ko active IP Right Grant
- 2000-10-25 US US09/695,321 patent/US6674093B1/en not_active Expired - Lifetime
2003
- 2003-07-11 US US10/617,035 patent/US6891196B2/en not_active Expired - Lifetime

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
TWI395307B (zh) *	2006-08-17	2013-05-01	Mitsubishi Heavy Ind Ltd	Semiconductor element module and manufacturing method thereof
CN102714220A (zh) *	2009-11-25	2012-10-03	夏普株式会社	移位寄存器和显示装置
CN102714220B (zh) *	2009-11-25	2015-04-08	夏普株式会社	移位寄存器和显示装置

Also Published As

Publication number	Publication date
JP2001196595A (ja)	2001-07-19
KR100393293B1 (ko)	2003-08-09
US6674093B1 (en)	2004-01-06
US6891196B2 (en)	2005-05-10
KR20010051213A (ko)	2001-06-25
JP3391343B2 (ja)	2003-03-31
US20040084672A1 (en)	2004-05-06

Legal Events

Date	Code	Title	Description
2002-06-26	GD4A	Issue of patent certificate for granted invention patent
2020-12-01	MK4A	Expiration of patent term of an invention patent

Publication	Publication Date	Title
TW478156B (en)	2002-03-01	Active matrix substrate and the manufacturing method therefor
TW519763B (en)	2003-02-01	Active matrix LCD panel
KR100868771B1 (ko)	2008-11-17	액정표시장치
JP5240964B2 (ja)	2013-07-17	薄膜トランジスタ表示板及びその製造方法
US9356052B2 (en)	2016-05-31	Thin film transistor with integrated connecting portion
TW533327B (en)	2003-05-21	Active matrix substrate and manufacturing method thereof
JP5190593B2 (ja)	2013-04-24	薄膜トランジスタ基板及びこの製造方法、並びに薄膜トランジスタ基板これを備えた液晶表示パネル
CN104423107B (zh)	2017-08-22	液晶显示装置及其制造方法
US9368523B2 (en)	2016-06-14	Semiconductor device, method for manufacturing semiconductor device, and display device
CN106409845A (zh)	2017-02-15	开关元件及其制备方法、阵列基板以及显示装置
US20070058097A1 (en)	2007-03-15	Liquid crystal display device and method for manufacturing the same
TWI356962B (en)	2012-01-21	Substrate for display device, manufacturing method
TWI406420B (zh)	2013-08-21	主動矩陣基板、顯示裝置及主動矩陣基板之製造方法
TW201611252A (zh)	2016-03-16	半導體裝置、液晶顯示裝置及半導體裝置的製造方法
KR101474774B1 (ko)	2014-12-19	박막 트랜지스터 표시판 및 이의 제조 방법
JP2780673B2 (ja)	1998-07-30	アクティブマトリクス型液晶表示装置およびその製造方法
JP2012018970A (ja)	2012-01-26	薄膜トランジスタアレイ基板、その製造方法、及び液晶表示装置
KR20100034545A (ko)	2010-04-01	액정표시장치 및 그 제조방법
JPWO2011132353A1 (ja)	2013-07-18	表示装置及びその製造方法
CN103137555B (zh)	2016-03-09	薄膜晶体管液晶显示器件及其制造方法
CN109661729A (zh)	2019-04-19	有源矩阵基板及其制造方法
KR102188067B1 (ko)	2020-12-07	박막 트랜지스터 어레이 기판 및 이의 제조 방법
JP2006126255A (ja)	2006-05-18	電気光学装置、液晶表示装置及びそれらの製造方法
JP2000029071A (ja)	2000-01-28	表示装置用アレイ基板、及びその製造方法
JPH04111322A (ja)	1992-04-13	薄膜トランジスタの製造方法