TW285776B - - Google Patents
Info
- Publication number
- TW285776B TW285776B TW083109862A TW83109862A TW285776B TW 285776 B TW285776 B TW 285776B TW 083109862 A TW083109862 A TW 083109862A TW 83109862 A TW83109862 A TW 83109862A TW 285776 B TW285776 B TW 285776B
- Authority
- TW
- Taiwan
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
- H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42324—Gate electrodes for transistors with a floating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42324—Gate electrodes for transistors with a floating gate
- H01L29/42328—Gate electrodes for transistors with a floating gate with at least one additional gate other than the floating gate and the control gate, e.g. program gate, erase gate or select gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/129,866 US5479368A (en) | 1993-09-30 | 1993-09-30 | Spacer flash cell device with vertically oriented floating gate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW285776B true TW285776B (zh) | 1996-09-11 |
Family
ID=22441979
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW083109862A TW285776B (zh) | 1993-09-30 | 1994-10-22 |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US5479368A (zh) |
| EP (1) | EP0721643A4 (zh) |
| JP (1) | JPH09507608A (zh) |
| KR (1) | KR100274491B1 (zh) |
| CN (1) | CN1051164C (zh) |
| SG (1) | SG48975A1 (zh) |
| TW (1) | TW285776B (zh) |
| WO (1) | WO1995009423A1 (zh) |
Families Citing this family (41)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6081449A (en) * | 1987-05-12 | 2000-06-27 | Altera Corporation | High-density nonvolatile memory cell |
| US5640031A (en) * | 1993-09-30 | 1997-06-17 | Keshtbod; Parviz | Spacer flash cell process |
| DE69429567T2 (de) * | 1993-10-15 | 2002-09-12 | Sony Corp., Tokio/Tokyo | Nichtflüchtige Halbleiteranordnung |
| JP3256084B2 (ja) * | 1994-05-26 | 2002-02-12 | 株式会社半導体エネルギー研究所 | 半導体集積回路およびその作製方法 |
| US5543339A (en) * | 1994-08-29 | 1996-08-06 | Motorola, Inc. | Process for forming an electrically programmable read-only memory cell |
| KR0172273B1 (ko) * | 1995-06-24 | 1999-02-01 | 김주용 | 플래쉬 메모리 셀의 제조방법 |
| KR100217901B1 (ko) * | 1996-03-11 | 1999-09-01 | 김영환 | 플래쉬 이이피롬 셀 및 그 제조방법 |
| US5998263A (en) * | 1996-05-16 | 1999-12-07 | Altera Corporation | High-density nonvolatile memory cell |
| US5780341A (en) * | 1996-12-06 | 1998-07-14 | Halo Lsi Design & Device Technology, Inc. | Low voltage EEPROM/NVRAM transistors and making method |
| TW337607B (en) | 1997-08-06 | 1998-08-01 | Mos Electronics Taiwan Inc | Process for forming a contact hole in an EEPROM with NOR construction |
| TW425660B (en) * | 1997-12-12 | 2001-03-11 | Mosel Vitelic Inc | Method of forming uniform dielectric layer between two conductive layers in integrated circuit |
| US5837588A (en) * | 1998-01-26 | 1998-11-17 | Texas Instruments-Acer Incorporated | Method for forming a semiconductor device with an inverse-T gate lightly-doped drain structure |
| US6194272B1 (en) | 1998-05-19 | 2001-02-27 | Mosel Vitelic, Inc. | Split gate flash cell with extremely small cell size |
| JP3544308B2 (ja) * | 1998-11-05 | 2004-07-21 | 富士通株式会社 | 不揮発性半導体記憶装置の製造方法 |
| US6130453A (en) * | 1999-01-04 | 2000-10-10 | International Business Machines Corporation | Flash memory structure with floating gate in vertical trench |
| US6165845A (en) | 1999-04-26 | 2000-12-26 | Taiwan Semiconductor Manufacturing Company | Method to fabricate poly tip in split-gate flash |
| KR20010005001A (ko) | 1999-06-30 | 2001-01-15 | 김영환 | 플래쉬 메모리 셀의 제조 방법 |
| US6096604A (en) * | 1999-08-04 | 2000-08-01 | Chartered Semiconductor Manufacturing Ltd | Production of reversed flash memory device |
| US6271106B1 (en) * | 1999-10-29 | 2001-08-07 | Motorola, Inc. | Method of manufacturing a semiconductor component |
| US6294429B1 (en) | 1999-11-24 | 2001-09-25 | International Business Machines Corporation | Method of forming a point on a floating gate for electron injection |
| TW452973B (en) * | 2000-04-18 | 2001-09-01 | Taiwan Semiconductor Mfg | Method for manufacturing floating gate of split-gate flash memory |
| US6559055B2 (en) | 2000-08-15 | 2003-05-06 | Mosel Vitelic, Inc. | Dummy structures that protect circuit elements during polishing |
| US6355524B1 (en) * | 2000-08-15 | 2002-03-12 | Mosel Vitelic, Inc. | Nonvolatile memory structures and fabrication methods |
| TW466710B (en) * | 2000-09-08 | 2001-12-01 | United Microelectronics Corp | Manufacturing method of Flash memory |
| US6624029B2 (en) | 2000-11-30 | 2003-09-23 | Atmel Corporation | Method of fabricating a self-aligned non-volatile memory cell |
| US6479351B1 (en) * | 2000-11-30 | 2002-11-12 | Atmel Corporation | Method of fabricating a self-aligned non-volatile memory cell |
| US6358827B1 (en) | 2001-01-19 | 2002-03-19 | Taiwan Semiconductor Manufacturing Company | Method of forming a squared-off, vertically oriented polysilicon spacer gate |
| US6821847B2 (en) | 2001-10-02 | 2004-11-23 | Mosel Vitelic, Inc. | Nonvolatile memory structures and fabrication methods |
| CN100340000C (zh) * | 2002-02-07 | 2007-09-26 | 台湾积体电路制造股份有限公司 | 记忆性半导体存储器 |
| US6894328B2 (en) * | 2002-08-13 | 2005-05-17 | Newport Fab, Llc | Self-aligned bipolar transistor having recessed spacers and method for fabricating same |
| US6734055B1 (en) * | 2002-11-15 | 2004-05-11 | Taiwan Semiconductor Manufactoring Company | Multi-level (4 state/2-bit) stacked gate flash memory cell |
| US6831325B2 (en) * | 2002-12-20 | 2004-12-14 | Atmel Corporation | Multi-level memory cell with lateral floating spacers |
| KR20040056839A (ko) * | 2002-12-24 | 2004-07-01 | 아남반도체 주식회사 | 반도체 소자 제조 방법 |
| US6972260B2 (en) * | 2004-05-07 | 2005-12-06 | Powerchip Semiconductor Corp. | Method of fabricating flash memory cell |
| US20060054977A1 (en) * | 2004-09-16 | 2006-03-16 | Intel Corporation | Charge storage memory cell |
| US8099783B2 (en) * | 2005-05-06 | 2012-01-17 | Atmel Corporation | Security method for data protection |
| CN100411145C (zh) * | 2005-08-19 | 2008-08-13 | 力晶半导体股份有限公司 | 非挥发性存储器及其制造方法与操作方法 |
| TWI281753B (en) * | 2005-12-13 | 2007-05-21 | Powerchip Semiconductor Corp | Non-volatile memory and manufacturing method and operating method thereof |
| TWI349339B (en) * | 2007-09-03 | 2011-09-21 | Nanya Technology Corp | Non-volatile memory and fabricating method thereof |
| US8288815B2 (en) | 2008-12-12 | 2012-10-16 | Macronix International Co., Ltd. | Gate structure of semiconductor device having a conductive structure with a middle portion and two spacer portions |
| CN108492844B (zh) * | 2018-03-26 | 2020-10-16 | 上海华虹宏力半导体制造有限公司 | 一种双分离栅闪存阵列及其编程方法 |
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| US4122544A (en) * | 1976-12-27 | 1978-10-24 | Texas Instruments Incorporated | Electrically alterable floating gate semiconductor memory device with series enhancement transistor |
| US4203158A (en) * | 1978-02-24 | 1980-05-13 | Intel Corporation | Electrically programmable and erasable MOS floating gate memory device employing tunneling and method of fabricating same |
| JPS5519851A (en) * | 1978-07-31 | 1980-02-12 | Hitachi Ltd | Manufacture of non-volatile memories |
| US4300212A (en) * | 1979-01-24 | 1981-11-10 | Xicor, Inc. | Nonvolatile static random access memory devices |
| US4332077A (en) * | 1979-08-10 | 1982-06-01 | Rca Corporation | Method of making electrically programmable control gate injected floating gate solid state memory transistor |
| JPS56120166A (en) * | 1980-02-27 | 1981-09-21 | Hitachi Ltd | Semiconductor ic device and manufacture thereof |
| IT1209227B (it) * | 1980-06-04 | 1989-07-16 | Sgs Microelettronica Spa | Cella di memoria non volatile a 'gate' flottante elettricamente alterabile. |
| US4366555A (en) * | 1980-08-01 | 1982-12-28 | National Semiconductor Corporation | Electrically erasable programmable read only memory |
| JPS57112078A (en) * | 1980-12-29 | 1982-07-12 | Fujitsu Ltd | Manufacture of electrically rewritable fixed memory |
| JPS6059750B2 (ja) * | 1980-12-29 | 1985-12-26 | 富士通株式会社 | 不揮発性半導体記憶装置 |
| US4822750A (en) * | 1983-08-29 | 1989-04-18 | Seeq Technology, Inc. | MOS floating gate memory cell containing tunneling diffusion region in contact with drain and extending under edges of field oxide |
| IT1213218B (it) * | 1984-09-25 | 1989-12-14 | Ates Componenti Elettron | Processo per la fabbricazione di una cella di memoria non volatile con area di ossido sottile di dimensioni molto piccole, e cella ottenuta con il processo suddetto. |
| US4754320A (en) * | 1985-02-25 | 1988-06-28 | Kabushiki Kaisha Toshiba | EEPROM with sidewall control gate |
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| US4814286A (en) * | 1987-02-02 | 1989-03-21 | Intel Corporation | EEPROM cell with integral select transistor |
| JPH0712062B2 (ja) * | 1987-09-09 | 1995-02-08 | 三菱電機株式会社 | 半導体記憶装置の製造方法 |
| US4853895A (en) * | 1987-11-30 | 1989-08-01 | Texas Instruments Incorporated | EEPROM including programming electrode extending through the control gate electrode |
| US5143860A (en) * | 1987-12-23 | 1992-09-01 | Texas Instruments Incorporated | High density EPROM fabricaiton method having sidewall floating gates |
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| US5095344A (en) * | 1988-06-08 | 1992-03-10 | Eliyahou Harari | Highly compact eprom and flash eeprom devices |
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| US5270562A (en) * | 1989-09-07 | 1993-12-14 | Sgs-Thomson Microelectronics S.A. | Locking device with a never-programmable floating gate cell |
| US5045488A (en) * | 1990-01-22 | 1991-09-03 | Silicon Storage Technology, Inc. | Method of manufacturing a single transistor non-volatile, electrically alterable semiconductor memory device |
| US5067108A (en) * | 1990-01-22 | 1991-11-19 | Silicon Storage Technology, Inc. | Single transistor non-volatile electrically alterable semiconductor memory device with a re-crystallized floating gate |
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| US5019879A (en) * | 1990-03-15 | 1991-05-28 | Chiu Te Long | Electrically-flash-erasable and electrically-programmable memory storage devices with self aligned tunnel dielectric area |
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| US5235544A (en) * | 1990-11-09 | 1993-08-10 | John Caywood | Flash EPROM cell and method for operating same |
| JP2714999B2 (ja) * | 1990-11-28 | 1998-02-16 | シャープ株式会社 | アナログ／デジタル変換器 |
| US5220531A (en) * | 1991-01-02 | 1993-06-15 | Information Storage Devices, Inc. | Source follower storage cell and improved method and apparatus for iterative write for integrated circuit analog signal recording and playback |
| DE69226176T2 (de) * | 1991-04-09 | 1999-12-23 | Silicon Storage Technology, Inc. | Elektrisch aenderbare einzel-transistor-halbleiterfestwertspeicheranordnung |
| US5240870A (en) * | 1991-04-18 | 1993-08-31 | National Semiconductor Corporation | Stacked gate process flow for cross-point EPROM with internal access transistor |
| US5241507A (en) * | 1991-05-03 | 1993-08-31 | Hyundai Electronics America | One transistor cell flash memory assay with over-erase protection |
| JP2877556B2 (ja) * | 1991-06-03 | 1999-03-31 | シャープ株式会社 | 不揮発性半導体装置及びその製造方法 |
| US5338952A (en) * | 1991-06-07 | 1994-08-16 | Sharp Kabushiki Kaisha | Non-volatile memory |
| FR2677481B1 (fr) * | 1991-06-07 | 1993-08-20 | Commissariat Energie Atomique | Procede de fabrication d'une cellule de memoire non volatile et cellule de memoire obtenue. |
| JP2859487B2 (ja) * | 1991-07-01 | 1999-02-17 | シャープ株式会社 | 不揮発性メモリ及びその製造方法 |
| US5284784A (en) * | 1991-10-02 | 1994-02-08 | National Semiconductor Corporation | Buried bit-line source-side injection flash memory cell |
| US5293328A (en) * | 1992-01-15 | 1994-03-08 | National Semiconductor Corporation | Electrically reprogrammable EPROM cell with merged transistor and optiumum area |
| US5414286A (en) * | 1992-03-19 | 1995-05-09 | Sharp Kabushiki Kaisha | Nonvolatile memory, method of fabricating the same, and method of reading information from the same |
-
1993
- 1993-09-30 US US08/129,866 patent/US5479368A/en not_active Expired - Fee Related
-
1994
- 1994-09-20 CN CN94193386A patent/CN1051164C/zh not_active Expired - Fee Related
- 1994-09-20 KR KR1019960701722A patent/KR100274491B1/ko not_active IP Right Cessation
- 1994-09-20 JP JP7510367A patent/JPH09507608A/ja active Pending
- 1994-09-20 WO PCT/US1994/010648 patent/WO1995009423A1/en not_active Application Discontinuation
- 1994-09-20 EP EP94929270A patent/EP0721643A4/en not_active Withdrawn
- 1994-10-22 TW TW083109862A patent/TW285776B/zh active
- 1994-12-20 SG SG1996004593A patent/SG48975A1/en unknown
-
1995
- 1995-02-03 US US08/383,090 patent/US5476801A/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN1134196A (zh) | 1996-10-23 |
| CN1051164C (zh) | 2000-04-05 |
| EP0721643A4 (en) | 1997-01-22 |
| KR960705368A (ko) | 1996-10-09 |
| EP0721643A1 (en) | 1996-07-17 |
| JPH09507608A (ja) | 1997-07-29 |
| US5479368A (en) | 1995-12-26 |
| US5476801A (en) | 1995-12-19 |
| KR100274491B1 (ko) | 2001-01-15 |
| SG48975A1 (en) | 1998-05-18 |
| WO1995009423A1 (en) | 1995-04-06 |