JPS6418219A - Manufacture of trench-type memory cell - Google Patents
Manufacture of trench-type memory cellInfo
- Publication number
- JPS6418219A JPS6418219A JP62173791A JP17379187A JPS6418219A JP S6418219 A JPS6418219 A JP S6418219A JP 62173791 A JP62173791 A JP 62173791A JP 17379187 A JP17379187 A JP 17379187A JP S6418219 A JPS6418219 A JP S6418219A
- Authority
- JP
- Japan
- Prior art keywords
- trench
- glass layer
- doped
- based glass
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000011521 glass Substances 0.000 abstract 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 238000000137 annealing Methods 0.000 abstract 2
- 238000005229 chemical vapour deposition Methods 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 2
- 239000002019 doping agent Substances 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 238000001312 dry etching Methods 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Abstract
PURPOSE:To easily form an impurity diffusion layer of more than a definite concentration value by a method wherein a two-layer structure composed of an Si-based glass layer doped with a dopant and another Si-based glass layer formed on its upper part and not doped with the dopant is formed inside a trench formed in a semiconductor substrate and an annealing operation is executed. CONSTITUTION:A trench 5 is formed in a single-crystal silicon substrate 3 by a dry-etching operation by making use of SiO2 by a CVD method as a mask 4. After that, an As-doped Si-based glass layer 1 is formed inside the trench 5; an SiO2 film 2 is formed on the glass layer 1 by the CVD method; after that, an annealing heat-treatment is executed. By this setup, it is possible to obtain an impurity diffusion layer whose concentration is 2.5 times higher than that of a case where only the Si-doped Si-based glass layer 1 is formed and annealed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62173791A JPS6418219A (en) | 1987-07-14 | 1987-07-14 | Manufacture of trench-type memory cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62173791A JPS6418219A (en) | 1987-07-14 | 1987-07-14 | Manufacture of trench-type memory cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6418219A true JPS6418219A (en) | 1989-01-23 |
Family
ID=15967220
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62173791A Pending JPS6418219A (en) | 1987-07-14 | 1987-07-14 | Manufacture of trench-type memory cell |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6418219A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04105169U (en) * | 1991-01-25 | 1992-09-10 | 東陶機器株式会社 | Automatic toilet bowl cleaning device |
-
1987
- 1987-07-14 JP JP62173791A patent/JPS6418219A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04105169U (en) * | 1991-01-25 | 1992-09-10 | 東陶機器株式会社 | Automatic toilet bowl cleaning device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| GB1501249A (en) | Field effect transistor | |
| GB1382936A (en) | Integrated circuit fabrication method | |
| GB1335814A (en) | Transistor and method of manufacturing the same | |
| US3541676A (en) | Method of forming field-effect transistors utilizing doped insulators as activator source | |
| JPS5736842A (en) | Semiconductor integrated circuit device | |
| JPS6418219A (en) | Manufacture of trench-type memory cell | |
| JPS5649554A (en) | Manufacture of semiconductor memory | |
| JPS57134956A (en) | Manufacture of semiconductor integrated circuit | |
| JPS55107229A (en) | Method of manufacturing semiconductor device | |
| JPS554964A (en) | Manufacture of mos type semiconductor | |
| JPS54107270A (en) | Semiconductor device and its production | |
| JPS5771164A (en) | Semiconductor device | |
| JPS5559778A (en) | Method of fabricating semiconductor device | |
| JPS5793525A (en) | Manufacture of semiconductor device | |
| JPS5640256A (en) | Manufacture of semiconductor device | |
| JPS5720461A (en) | Production of semiconductor device | |
| JPS56129371A (en) | Manufacture of semiconductor ic device | |
| JPS57132357A (en) | Manufacture of semiconductor element | |
| JPS5685852A (en) | Manufacture of bipolar type integrated circuit | |
| JPS5649553A (en) | Manufacture of semiconductor memory | |
| JPS56135973A (en) | Manufacture of semiconductor device | |
| JPS5753958A (en) | Semiconductor device | |
| JPS5728361A (en) | Manufacture of transistor | |
| JPS577121A (en) | Manufacture of semiconductor device | |
| JPS5453869A (en) | Semiconductor device |