JPS5649553A - Manufacture of semiconductor memory - Google Patents
Manufacture of semiconductor memoryInfo
- Publication number
- JPS5649553A JPS5649553A JP12412179A JP12412179A JPS5649553A JP S5649553 A JPS5649553 A JP S5649553A JP 12412179 A JP12412179 A JP 12412179A JP 12412179 A JP12412179 A JP 12412179A JP S5649553 A JPS5649553 A JP S5649553A
- Authority
- JP
- Japan
- Prior art keywords
- film
- capacity
- oxide film
- poly
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 2
- 238000005229 chemical vapour deposition Methods 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 238000001020 plasma etching Methods 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Abstract
PURPOSE:To reduce cell size by forming a capacity increasing P-N junction through self-matching by diffusing, through appropriate heat treatment, the different types of impurities on previously doped on an insulating film for capacity and a capacity electrode provided on the film. CONSTITUTION:A field oxide film 11 and an oxide film for capacity 12A are formed on the surface of a P type Si substrate and As ion is driven at a high density into the film 12A. SiO2 film 14A is formed by oxidizing the surface of poly-Si 13A fromed by CVD method. B ion is driven at a high density into the substrate with a resist mask 15 arranged. Advantageous therein is to expand grain by previously doping P on poly-Si. Next, an electrode 13 and insulating films 12 and 14 are formed by Hf-gas plasma etching and the surface of the substrate is exposed. An oxide film 14' amd a gate oxide film 12' are made by again making oxidation, and a poly-Si gate electrode 18 and ion drive-in layers 19 and 20 are formed. A P<+>-N<+> junction is formed of a capacity increasing p<+>-layer 16 and an N<+>-layer 17 made through heat treatment. Thereby, self-matching eliminates the necessity of mask adjustment allowance so that cell size can be reduced.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12412179A JPS5649553A (en) | 1979-09-28 | 1979-09-28 | Manufacture of semiconductor memory |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12412179A JPS5649553A (en) | 1979-09-28 | 1979-09-28 | Manufacture of semiconductor memory |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5649553A true JPS5649553A (en) | 1981-05-06 |
| JPS6315748B2 JPS6315748B2 (en) | 1988-04-06 |
Family
ID=14877435
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12412179A Granted JPS5649553A (en) | 1979-09-28 | 1979-09-28 | Manufacture of semiconductor memory |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5649553A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5089436A (en) * | 1987-09-21 | 1992-02-18 | Samsung Semiconductor And Telecommunications Co., Ltd. | Method for fabricating a semiconductor device by slope etching a polysiliow layer |
| US5120674A (en) * | 1988-06-07 | 1992-06-09 | Samsung Electronics Co., Ltd. | Method of making stacked capacitor dram cell |
-
1979
- 1979-09-28 JP JP12412179A patent/JPS5649553A/en active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5089436A (en) * | 1987-09-21 | 1992-02-18 | Samsung Semiconductor And Telecommunications Co., Ltd. | Method for fabricating a semiconductor device by slope etching a polysiliow layer |
| US5120674A (en) * | 1988-06-07 | 1992-06-09 | Samsung Electronics Co., Ltd. | Method of making stacked capacitor dram cell |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6315748B2 (en) | 1988-04-06 |
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