JPS5965487A - Radioactive ray detecting element for high density mounting - Google Patents
Radioactive ray detecting element for high density mountingInfo
- Publication number
- JPS5965487A JPS5965487A JP57175346A JP17534682A JPS5965487A JP S5965487 A JPS5965487 A JP S5965487A JP 57175346 A JP57175346 A JP 57175346A JP 17534682 A JP17534682 A JP 17534682A JP S5965487 A JPS5965487 A JP S5965487A
- Authority
- JP
- Japan
- Prior art keywords
- detector elements
- radioactive rays
- density mounting
- high density
- detection element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000002285 radioactive effect Effects 0.000 title abstract 5
- 239000002184 metal Substances 0.000 claims abstract description 7
- 239000004065 semiconductor Substances 0.000 claims abstract description 5
- 238000001514 detection method Methods 0.000 claims description 14
- 230000005855 radiation Effects 0.000 claims description 11
- 239000000853 adhesive Substances 0.000 claims description 5
- 230000001070 adhesive effect Effects 0.000 claims description 4
- 238000000605 extraction Methods 0.000 claims description 3
- 230000000903 blocking effect Effects 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 2
- 239000010409 thin film Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 238000002591 computed tomography Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000010408 film Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の属する技術分野〕
この発明はＸｌｌ１！撮影装置（Ｘ＠ＣＴ装置など）に
適用して有用な高密度実装用放射線検出素子に関する。[Detailed description of the invention] [Technical field to which the invention pertains] This invention is directed to Xll1! The present invention relates to a radiation detection element for high-density mounting that is useful when applied to imaging devices (such as X@CT devices).
この発明に関係の深い従来技術例金第１図に示す（特開
昭５４−１３３０９２号）。半導体検出素子１１は、マ
ウント台１２に固定されてハウジング１６の摺動溝２０
に沿って収納配列される。検出素子１１の正負取り出し
電極層１３．１５は・・ウジング１６の底板に設けられ
たコネクタ１７．１８ ｔ−介して外部のセンス回路１
９に導かれることになる。１４は金属背板、２１はコリ
メータ板、２２ａ、 ２２ｂはコリメータ板２１の支持
台である。この従来例はＸ線ＣＴ（コンピュータ・トモ
グラフィ）′などに用いることのできる多チャンネル放
射線検出器として有用なものであるが、未だ解決すべき
次のような問題がめる。それは、第１図（ｂ）において
電極層１３．１５は通常１μｍ以下のＡＡやＡｕなどの
金属薄膜が使用されるために、検出：素子１１中で１発
生する散乱放射線を阻止することができず、隣接する検
出素子へ疑信号（散乱クロストーク）が生ずる点である
。An example of the prior art that is closely related to this invention is shown in FIG. The semiconductor detection element 11 is fixed to the mount base 12 and fitted into the sliding groove 20 of the housing 16.
are arranged along the The positive and negative extraction electrode layers 13.15 of the detection element 11 are connected to the external sense circuit 1 through connectors 17.18 provided on the bottom plate of the housing 16.
You will be guided by 9. 14 is a metal back plate, 21 is a collimator plate, and 22a and 22b are supports for the collimator plate 21. Although this conventional example is useful as a multichannel radiation detector that can be used in X-ray CT (computer tomography), etc., it still has the following problems that need to be solved. This is because the electrode layer 13.15 in FIG. 1(b) is usually a metal thin film such as AA or Au with a thickness of 1 μm or less, so that the scattered radiation generated in the detection element 11 cannot be blocked. First, a false signal (scattered crosstalk) is generated to adjacent detection elements.
この発明は上記従来技術の欠点に鑑みてなされたもので
、隣接する検出素子への放射線散乱によるクロストーク
を大幅に減少させることのできる高密度実装用放射線検
出素子を提供することを目的とする。区″Ｆ夕臼
〔発明の概要〕
本発明は、放射線に対する阻止能力の高い金属コリメー
タ板上に、半導体検出素子と（ＦＳ−＠引出し用マウン
ト台とを固定してなる高密敦実装用放射線検出素子であ
る。The present invention has been made in view of the above-mentioned drawbacks of the prior art, and an object of the present invention is to provide a radiation detection element for high-density mounting that can significantly reduce crosstalk due to radiation scattering to adjacent detection elements. . [Summary of the Invention] The present invention is a radiation detection device for high-density mounting, in which a semiconductor detection element and a (FS-@drawer mount) are fixed on a metal collimator plate with high radiation blocking ability. It is element.
本発明により隣接する検出素子間の牧射線散乱によるク
ロストークが大幅に減少する。According to the present invention, crosstalk due to graticule scattering between adjacent detection elements is significantly reduced.
本発明の実施例を第２図（ａ） 、 （ｂ）に示す。（
ａ）は平面図、（ｂ）は断面図である。図中、ｌはＡｕ
薄膜（ｓｏｏｉ程度）、２はｎ −Ｓ ｉ基板、３はＡ
ｔ薄膜（２０００Ｘ程度）。An embodiment of the present invention is shown in FIGS. 2(a) and 2(b). (
(a) is a plan view, and (b) is a cross-sectional view. In the figure, l is Au
Thin film (sooi level), 2 is n-Si substrate, 3 is A
t thin film (approximately 2000X).
４は導電性接着剤、５はＭｏコリメータ板、６は導電性
樹脂、７は絶縁性樹脂、８はＣｏ薄膜（１０μｍ程度）
。4 is a conductive adhesive, 5 is a Mo collimator plate, 6 is a conductive resin, 7 is an insulating resin, 8 is a Co thin film (about 10 μm)
.
９は絶縁性接着剤、１０はガラスエポキシ樹脂、３１は
負′Ｐヒ極端子、３２は正電極端子（１史用する際には
任意の１本のみ金残して他の２本は切断する。残す端子
全順次かえていくことにより隣；妾する検出素子からの
信号引出しが答易になる。）全それぞれ表わしている。9 is an insulating adhesive, 10 is a glass epoxy resin, 31 is a negative terminal, and 32 is a positive electrode terminal. By sequentially changing all the remaining terminals, it becomes easier to extract signals from the adjacent detecting elements.
このような構造により、５のＭ。With this structure, M of 5.
コリメータ板（厚さは２００ＩＢｎ程度）は隣接する検
出素子中で発生する散乱放射１０９− ｋ減衰すると同
時に、負電極としての役割を果たすことになる。The collimator plate (thickness is about 200 IBn) attenuates the scattered radiation 109-k generated in the adjacent detection element and at the same time serves as a negative electrode.
正負電極端子の数は任意でおる。その他、コリメータ板
の材料として、ＭＯ以外にＷなどを使用することができ
る。The number of positive and negative electrode terminals is arbitrary. In addition to MO, W or the like can be used as a material for the collimator plate.
第１図は従来例を示す図、第２図は本発明の一実施例を
示す図である。
１− Ａｕ薄膜、２−ｎ−８ｉ基板、３・・・Ａｔ／ｌ
ｖ、）莫、４・・・導電性接着剤、５・・・Ｍｔ＋コリ
メータ板、６・・・導電性樹脂、７・・絶縁性樹脂、８
・・・ＣｕＲ膜、９・・・絶縁性１妾着剤、１０・・・
ガラスエポキシ樹脂、３１・・・負電極端子、３２・・
・正電極端子、 １３・・半導体検出素子、１２・・・
マウント台、 １３・・・正取り出しく極層。
１４・・金属背板、 １５・・・負取り出し電極層、１
６・・・ノ・ウジング、１７．１８・・・コネクタ、１
９・・・ヒンス回路。
２０・・摺動溝、 ２１−・・二′ｊリメータ板、 ２
２ａ、ｂ−９，支持台代理人 弁理士 則 近 憲
佑
第２図FIG. 1 is a diagram showing a conventional example, and FIG. 2 is a diagram showing an embodiment of the present invention. 1-Au thin film, 2-n-8i substrate, 3...At/l
v,) Momo, 4... Conductive adhesive, 5... Mt+collimator plate, 6... Conductive resin, 7... Insulating resin, 8
...CuR film, 9...Insulating 1 adhesive agent, 10...
Glass epoxy resin, 31... Negative electrode terminal, 32...
-Positive electrode terminal, 13...Semiconductor detection element, 12...
Mount stand, 13... polar layer to take out. 14... Metal back plate, 15... Negative extraction electrode layer, 1
6... No Uzing, 17.18... Connector, 1
9... Hins circuit. 20...Sliding groove, 21-...2'j meter plate, 2
2a, b-9, support representative Patent attorney Nori Chika
Yu figure 2
Claims (1)
に正負の信号電極を有する半導体放射線検出素子を導電
性接着剤により固定し、さらに前記金属コリメータ板上
に信号引き出し用導電性物質膜が付随されているマウン
ト板を固定することを特徴とする高密度実装用放射線検
出素子。A semiconductor radiation detection element having positive and negative signal electrodes is fixed on a metal collimator plate having a high radiation blocking ability with a conductive adhesive, and a conductive material film for signal extraction is attached on the metal collimator plate. A radiation detection element for high-density mounting, which is characterized by fixing a mounting plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57175346A JPS5965487A (en) | 1982-10-07 | 1982-10-07 | Radioactive ray detecting element for high density mounting |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57175346A JPS5965487A (en) | 1982-10-07 | 1982-10-07 | Radioactive ray detecting element for high density mounting |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5965487A true JPS5965487A (en) | 1984-04-13 |
| JPH0458712B2 JPH0458712B2 (en) | 1992-09-18 |
Family
ID=15994456
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57175346A Granted JPS5965487A (en) | 1982-10-07 | 1982-10-07 | Radioactive ray detecting element for high density mounting |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5965487A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6340381A (en) * | 1986-08-06 | 1988-02-20 | Toshiba Corp | Radiation detector |
| WO2010004453A2 (en) | 2008-06-16 | 2010-01-14 | Koninklijke Philips Electronics N.V. | Radiation detector and a method of manufacturing a radiation detector |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5217684A (en) * | 1975-06-03 | 1977-02-09 | Int Standard Electric Corp | Method and apparatus for color marking on insulated conductor |
| JPS5317361A (en) * | 1976-07-31 | 1978-02-17 | Japan National Railway | Automatic date and time printer for trackkinspecting car |
-
1982
- 1982-10-07 JP JP57175346A patent/JPS5965487A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5217684A (en) * | 1975-06-03 | 1977-02-09 | Int Standard Electric Corp | Method and apparatus for color marking on insulated conductor |
| JPS5317361A (en) * | 1976-07-31 | 1978-02-17 | Japan National Railway | Automatic date and time printer for trackkinspecting car |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6340381A (en) * | 1986-08-06 | 1988-02-20 | Toshiba Corp | Radiation detector |
| WO2010004453A2 (en) | 2008-06-16 | 2010-01-14 | Koninklijke Philips Electronics N.V. | Radiation detector and a method of manufacturing a radiation detector |
| US8564084B2 (en) | 2008-06-16 | 2013-10-22 | Koninklijke Philips N.V. | Radiation detection and a method of manufacturing a radiation detector |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0458712B2 (en) | 1992-09-18 |
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