JPS57202771A - Semiconductor integrated circuit device - Google Patents
Semiconductor integrated circuit deviceInfo
- Publication number
- JPS57202771A JPS57202771A JP8777281A JP8777281A JPS57202771A JP S57202771 A JPS57202771 A JP S57202771A JP 8777281 A JP8777281 A JP 8777281A JP 8777281 A JP8777281 A JP 8777281A JP S57202771 A JPS57202771 A JP S57202771A
- Authority
- JP
- Japan
- Prior art keywords
- type
- layer
- electrode
- region
- resistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000001681 protective effect Effects 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To make a resistor to be equipped outside unnecessary, and to obtain an IC having superior withstand property against an overvoltage by a method wherein a semiconductor resistor is provided in a semiconductor substrate constituting the IC. CONSTITUTION:An N<+> type buried layer 102b is formed by diffusion in the P type semiconductor substrate 101, an N type layer is made to grow epitaxially on the whole surface containing the buried layer, and an SiO2 film 104 is adhered on the whole surface. Then the prescribed openings are dug in the film 104, P type impurities are diffused to form P type layers 105, and the epitaxial layer is separated into the layers 103b, 103c. P type impurities are diffused in the layer 103b containing the layer 102b and forming an island type through the openings provided in the film 104 to form the emitter region 107, the collector region 108, and the base contact region 109. Moreover the P type resistor layer 106 to constitute the protective resistor is formed by diffusion in the layer 103c forming an island type, a contact electrode 110 and an electrode 111 to be connected to the region 109 are fixed, and a base electrode 112, an emitter electrode 113, a collector electrode 114, etc., are provided in the transistor region.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8777281A JPS57202771A (en) | 1981-06-05 | 1981-06-05 | Semiconductor integrated circuit device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8777281A JPS57202771A (en) | 1981-06-05 | 1981-06-05 | Semiconductor integrated circuit device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57202771A true JPS57202771A (en) | 1982-12-11 |
Family
ID=13924260
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8777281A Pending JPS57202771A (en) | 1981-06-05 | 1981-06-05 | Semiconductor integrated circuit device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57202771A (en) |
-
1981
- 1981-06-05 JP JP8777281A patent/JPS57202771A/en active Pending
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