JPS5317286A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5317286A
JPS5317286A JP9261476A JP9261476A JPS5317286A JP S5317286 A JPS5317286 A JP S5317286A JP 9261476 A JP9261476 A JP 9261476A JP 9261476 A JP9261476 A JP 9261476A JP S5317286 A JPS5317286 A JP S5317286A
Authority
JP
Japan
Prior art keywords
semiconductor device
production
film
insualtion
dividing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9261476A
Other languages
Japanese (ja)
Other versions
JPS5852340B2 (en
Inventor
Atsushi Ueno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP51092614A priority Critical patent/JPS5852340B2/en
Publication of JPS5317286A publication Critical patent/JPS5317286A/en
Publication of JPS5852340B2 publication Critical patent/JPS5852340B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE: To produce a semiconductor device by dividing the raised parts formed on the main surface of a substrate to upper and lower layers by an insualtion film and providing a diffused layer on both sides of the oxide film at the central part of the upper layer.
COPYRIGHT: (C)1978,JPO&Japio
JP51092614A 1976-07-31 1976-07-31 Manufacturing method of semiconductor device Expired JPS5852340B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP51092614A JPS5852340B2 (en) 1976-07-31 1976-07-31 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP51092614A JPS5852340B2 (en) 1976-07-31 1976-07-31 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5317286A true JPS5317286A (en) 1978-02-17
JPS5852340B2 JPS5852340B2 (en) 1983-11-22

Family

ID=14059304

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51092614A Expired JPS5852340B2 (en) 1976-07-31 1976-07-31 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5852340B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6194367A (en) * 1984-10-16 1986-05-13 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device and manufacture thereof
JPS6265364A (en) * 1985-09-17 1987-03-24 Toshiba Corp Manufacture of semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6194367A (en) * 1984-10-16 1986-05-13 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device and manufacture thereof
JPH0546706B2 (en) * 1984-10-16 1993-07-14 Nippon Telegraph & Telephone
JPS6265364A (en) * 1985-09-17 1987-03-24 Toshiba Corp Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS5852340B2 (en) 1983-11-22

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