JPS5787170A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5787170A
JPS5787170A JP16416780A JP16416780A JPS5787170A JP S5787170 A JPS5787170 A JP S5787170A JP 16416780 A JP16416780 A JP 16416780A JP 16416780 A JP16416780 A JP 16416780A JP S5787170 A JPS5787170 A JP S5787170A
Authority
JP
Japan
Prior art keywords
type
layer
region
substrate
diffusion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16416780A
Other languages
Japanese (ja)
Inventor
Akio Kitamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP16416780A priority Critical patent/JPS5787170A/en
Publication of JPS5787170A publication Critical patent/JPS5787170A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE:To obtain the bipolar transistor having excellent high frequency characteristics for the subject semiconductor device by a method wherein, when a bipolar type IC is manufactured, a substrate of double-layer structure, having a low density layer on the substrate of high density, is used instead of the one- conductive substrate having a uniformalized impurity density. CONSTITUTION:A P type layer 10 is epitaxially grown on a P<+> type semiconductor substrate 9, and an N<+> type buried region 2 is formed by diffusion on the surfacd layer section of the layer 10. Then, on the whole surface including the above region 2, an N type layer 3 is epitaxially grown, the layer 3 is isolated into an island shape using the P type region 4 reaching the laye 10, a P type base region 5 is formed by diffusion on the layer 3, and an N type emitter region 5 is formed by diffusion on the layer 3, and an N type emitter regin 6 is provided in the region 5. Also, an N<+> type collector contact region 7 is formed by diffusion in the island-type region 3, the whole surface is covered by an SiO2 film 8 and a window to be used for installation of an electrode is provided corresponding to the respective region. Through these procedures, as an inclination is given to the impurity density of the substrate, the junction capacitance between the substrates can be reduced, and high frequency characteristics can be improved.
JP16416780A 1980-11-20 1980-11-20 Semiconductor device Pending JPS5787170A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16416780A JPS5787170A (en) 1980-11-20 1980-11-20 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16416780A JPS5787170A (en) 1980-11-20 1980-11-20 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5787170A true JPS5787170A (en) 1982-05-31

Family

ID=15787994

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16416780A Pending JPS5787170A (en) 1980-11-20 1980-11-20 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5787170A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014167097A (en) * 2013-01-31 2014-09-11 Toagosei Co Ltd 2-cyanoacrylate-based adhesive composition

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4925877A (en) * 1972-07-04 1974-03-07
JPS5011791A (en) * 1973-06-04 1975-02-06

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4925877A (en) * 1972-07-04 1974-03-07
JPS5011791A (en) * 1973-06-04 1975-02-06

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014167097A (en) * 2013-01-31 2014-09-11 Toagosei Co Ltd 2-cyanoacrylate-based adhesive composition

Similar Documents

Publication Publication Date Title
JPS567463A (en) Semiconductor device and its manufacture
JPS54100273A (en) Memory circuit and variable resistance element
JPS5787170A (en) Semiconductor device
JPS5596675A (en) Semiconductor device
JPS56142661A (en) Semiconductor integrated circuit and manufacture thereof
JPS5687360A (en) Transistor device
JPS5749249A (en) Semiconductor integrated circuit device
JPS5685858A (en) Semiconductor device
JPS54106175A (en) Manufacture of semiconductor device
JPS54148486A (en) Semiconductor device
JPS5522893A (en) Semiconductor integrated circuit device and its manufacturing method
JPS5541787A (en) Semiconductor device
JPS57133672A (en) Semiconductor device
JPS5658258A (en) Semiconductor integrated circuit
JPS54154271A (en) Manufacture of semiconductor device
JPS5618464A (en) Semiconductor device
JPS56130964A (en) Integrated circuit device
JPS5570063A (en) Transistor and its preparation
JPS5734357A (en) Semiconductor integrated circuit
JPS5469089A (en) Semiconductor device
JPS5496975A (en) Semiconductor device
JPS564272A (en) Semiconductor device
JPS54157475A (en) Semiconductor device
JPS57112071A (en) Semiconductor device
JPS57202771A (en) Semiconductor integrated circuit device