JPS57117280A - Semiconductor device and manufacture thereof - Google Patents

Semiconductor device and manufacture thereof

Info

Publication number
JPS57117280A
JPS57117280A JP482881A JP482881A JPS57117280A JP S57117280 A JPS57117280 A JP S57117280A JP 482881 A JP482881 A JP 482881A JP 482881 A JP482881 A JP 482881A JP S57117280 A JPS57117280 A JP S57117280A
Authority
JP
Japan
Prior art keywords
insulating film
wirings
metal
electrode
formation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP482881A
Other languages
Japanese (ja)
Inventor
Hideki Yakida
Takeshi Konuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP482881A priority Critical patent/JPS57117280A/en
Publication of JPS57117280A publication Critical patent/JPS57117280A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To enable to provide even long wiring in an integrated circuit by a method wherein insulating layers are made to be interposed respectively between a non active region and an ohmic metal and between a non active region and the Schottky metal layer. CONSTITUTION:The insulating film 12 and 1' at the upper parts of active regions are removed, and an insulating film 1'' is made to be adhered newly on the whole surface. As the insulating film 1'', an Si3N4 film is used. The insulating film 1'' is used as the spacer, formation of an electrode and wirings 4' consisting of an ohmic metal 4 is performed according to the lift-off technique, and formation of an electrode and wirings 5' consisting of a Schottky metal 5 is performed. The wirings 4' consisting of the ohmic metal and the wirings 5' consisting of the Schottky metal are made to have structure being interposed the insulating film 12 and the insulating film 1' between them.
JP482881A 1981-01-13 1981-01-13 Semiconductor device and manufacture thereof Pending JPS57117280A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP482881A JPS57117280A (en) 1981-01-13 1981-01-13 Semiconductor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP482881A JPS57117280A (en) 1981-01-13 1981-01-13 Semiconductor device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS57117280A true JPS57117280A (en) 1982-07-21

Family

ID=11594553

Family Applications (1)

Application Number Title Priority Date Filing Date
JP482881A Pending JPS57117280A (en) 1981-01-13 1981-01-13 Semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS57117280A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60189974A (en) * 1984-03-09 1985-09-27 Sanyo Electric Co Ltd Schottky barrier type semiconductor device
JPS6427263A (en) * 1987-07-22 1989-01-30 Nec Corp Schottky-junction diode

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60189974A (en) * 1984-03-09 1985-09-27 Sanyo Electric Co Ltd Schottky barrier type semiconductor device
JPS6427263A (en) * 1987-07-22 1989-01-30 Nec Corp Schottky-junction diode

Similar Documents

Publication Publication Date Title
JPS5710992A (en) Semiconductor device and manufacture therefor
JPS6450446A (en) Method and structure for integrated circuit pad contact
JPS57117280A (en) Semiconductor device and manufacture thereof
JPS5312281A (en) Semiconductor control rectifying element
JPS56155531A (en) Manufacture of semiconductor device
JPS56111264A (en) Manufacture of semiconductor device
JPS56162873A (en) Insulated gate type field effect semiconductor device
JPS55151370A (en) Field effect transistor and fabricating method of the same
JPS57206049A (en) Manufacture of semiconductor device
JPS52139368A (en) Semiconductor device
JPS5683080A (en) Schottky-barrier-diode
JPS5477578A (en) High frequency high output bipolar transistor
JPS57211784A (en) Field effect transistor
JPS5735370A (en) Semiconductor device
JPS5317286A (en) Production of semiconductor device
JPS5612769A (en) Semiconductor device
JPS56144582A (en) Production of semiconductor device
JPS53116073A (en) Semiconductor device
JPS6417479A (en) Manufacture of semiconductor device
JPS5336185A (en) Electrode lead-out method of semiconductor integrated circuit
JPS57194562A (en) Semiconductor device and manufacture thereof
JPS5656662A (en) Semiconductor integrated circuit device
JPS56103470A (en) Semiconductor device and manufacture
JPS5443465A (en) Semiconuductor device
JPS5766667A (en) Semiconductor device