JPS56155531A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS56155531A JPS56155531A JP5764480A JP5764480A JPS56155531A JP S56155531 A JPS56155531 A JP S56155531A JP 5764480 A JP5764480 A JP 5764480A JP 5764480 A JP5764480 A JP 5764480A JP S56155531 A JPS56155531 A JP S56155531A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- injected
- ions
- reservoired
- treated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 150000002500 ions Chemical class 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- 230000004913 activation Effects 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 238000005247 gettering Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000001681 protective effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
Landscapes
- Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To enable the formation of, for example, an FET circuit in a good electrical characteristic by a method wherein active impurity ions are injected in a semiconductor substrate of a semi-insulated compound, and an injected layer of inactive ions is formed in a zone deeper than the ion-injected layer and heat-treated. CONSTITUTION:The Si-ions 3 are injected in an element forming layer of the GaAs substrate 1 made semi-insulation by adding, for example, Cr with an SiO2 film 2 as a mask to form the Si-injected layer 4. Then, the inactive Al-ions 5 are injected in the substrate to form the Al-injected layer 6 in the zone deeper than the Si-subjected layer 4. Then, SiO2 is reservoired on the whole surface to be made a protective film 7 and heat-treated to change the injected layer 4 to an N type active layer 4', and at the same time, the injected layer 5 is translated to a gettering layer 6' in which the Cr is reservoired. Thereafter, the active layer 4' is formed with a gate electrode 8, source and drain electrodes 9, 10 thereon to be made the FET. Thereby, the N type layer at a good activation rate is obtained, and, for example, the FET circuit in the good electrical characteristic can be formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5764480A JPS56155531A (en) | 1980-04-30 | 1980-04-30 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5764480A JPS56155531A (en) | 1980-04-30 | 1980-04-30 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS56155531A true JPS56155531A (en) | 1981-12-01 |
Family
ID=13061596
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5764480A Pending JPS56155531A (en) | 1980-04-30 | 1980-04-30 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56155531A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60206075A (en) * | 1984-03-29 | 1985-10-17 | Toshiba Corp | Manufacture of field effect type semiconductor device |
| JPS6114729A (en) * | 1984-06-29 | 1986-01-22 | Toshiba Corp | Gallium-arsenic compound semiconductor device |
| EP0201873A2 (en) * | 1985-05-09 | 1986-11-20 | Sumitomo Electric Industries Limited | A method of the production of a metal semiconductor field effect transistor and said transistor |
| US4889817A (en) * | 1985-08-08 | 1989-12-26 | Oki Electric Industry Co., Ltd. | Method of manufacturing schottky gate field transistor by ion implantation method |
| EP0499114A2 (en) * | 1991-02-14 | 1992-08-19 | International Business Machines Corporation | Internal gettering of oxygen in III-V compound semiconductors |
| US5141879A (en) * | 1989-08-28 | 1992-08-25 | Herbert Goronkin | Method of fabricating a FET having a high trap concentration interface layer |
| US5272373A (en) * | 1991-02-14 | 1993-12-21 | International Business Machines Corporation | Internal gettering of oxygen in III-V compound semiconductors |
-
1980
- 1980-04-30 JP JP5764480A patent/JPS56155531A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60206075A (en) * | 1984-03-29 | 1985-10-17 | Toshiba Corp | Manufacture of field effect type semiconductor device |
| JPS6114729A (en) * | 1984-06-29 | 1986-01-22 | Toshiba Corp | Gallium-arsenic compound semiconductor device |
| EP0201873A2 (en) * | 1985-05-09 | 1986-11-20 | Sumitomo Electric Industries Limited | A method of the production of a metal semiconductor field effect transistor and said transistor |
| US4889817A (en) * | 1985-08-08 | 1989-12-26 | Oki Electric Industry Co., Ltd. | Method of manufacturing schottky gate field transistor by ion implantation method |
| US5141879A (en) * | 1989-08-28 | 1992-08-25 | Herbert Goronkin | Method of fabricating a FET having a high trap concentration interface layer |
| EP0499114A2 (en) * | 1991-02-14 | 1992-08-19 | International Business Machines Corporation | Internal gettering of oxygen in III-V compound semiconductors |
| EP0499114A3 (en) * | 1991-02-14 | 1992-12-09 | International Business Machines Corporation | Internal gettering of oxygen in iii-v compound semiconductors |
| JPH05226343A (en) * | 1991-02-14 | 1993-09-03 | Internatl Business Mach Corp <Ibm> | Gettering of oxygen in compound semiconductor |
| US5272373A (en) * | 1991-02-14 | 1993-12-21 | International Business Machines Corporation | Internal gettering of oxygen in III-V compound semiconductors |
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