JPS57100744A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57100744A
JPS57100744A JP17743980A JP17743980A JPS57100744A JP S57100744 A JPS57100744 A JP S57100744A JP 17743980 A JP17743980 A JP 17743980A JP 17743980 A JP17743980 A JP 17743980A JP S57100744 A JPS57100744 A JP S57100744A
Authority
JP
Japan
Prior art keywords
region
type
isolation
grown
diffusing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17743980A
Other languages
Japanese (ja)
Inventor
Takuya Komoda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Electric Works Co Ltd
Original Assignee
Matsushita Electric Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Works Ltd filed Critical Matsushita Electric Works Ltd
Priority to JP17743980A priority Critical patent/JPS57100744A/en
Publication of JPS57100744A publication Critical patent/JPS57100744A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To reduce the necessary region area per one element by performing twice individually epitaxial growth and isolating and diffusion regions to the grown layer, thereby shortening the diffusing time and suppressing the lateral expansion of the isolation and diffusion region. CONSTITUTION:An example of applied to a P-N-P transistor is shown. An N type epitaxial layr 31 is grown on a P type substrate 1 formed with N<+> type buried layer 2, P type impurity is then diffused, and an isolation region 41 is formed. At this time, a P type collector buried region 9 is simultaneously formed. Subsequently, an N type epitaxial layer 32 is grown, P type impurity is diffused in the prescribed part, thereby forming an isolation region 42 connected to the isolation region 41. Simultaneously, a P type collector region 5 is formed. Eventually, an emitter region 6 is formed in the interior surrounded by the region 5. Since the epitaxial growth and the diffusing step are divided twice, the diffusing time can be shortened, thereby reducing the lateral expansion of the isolation regions 41, 42.
JP17743980A 1980-12-15 1980-12-15 Manufacture of semiconductor device Pending JPS57100744A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17743980A JPS57100744A (en) 1980-12-15 1980-12-15 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17743980A JPS57100744A (en) 1980-12-15 1980-12-15 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS57100744A true JPS57100744A (en) 1982-06-23

Family

ID=16030957

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17743980A Pending JPS57100744A (en) 1980-12-15 1980-12-15 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57100744A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0632503A1 (en) * 1993-07-01 1995-01-04 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno - CoRiMMe Integrated edge structure for high voltage semiconductor devices and related manufacturing process

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0632503A1 (en) * 1993-07-01 1995-01-04 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno - CoRiMMe Integrated edge structure for high voltage semiconductor devices and related manufacturing process
US5489799A (en) * 1993-07-01 1996-02-06 Consorzio Per La Ricerca Sulla Microelecttronica Nel Mezzogiorno Integrated edge structure for high voltage semiconductor devices and related manufacturing processs
US5895249A (en) * 1993-07-01 1999-04-20 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno Integrated edge structure for high voltage semiconductor devices and related manufacturing process

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