SE7910530L - SET TO MANUFACTURE INTEGRATED CIRCUITS - Google Patents

SET TO MANUFACTURE INTEGRATED CIRCUITS

Info

Publication number
SE7910530L
SE7910530L SE7910530A SE7910530A SE7910530L SE 7910530 L SE7910530 L SE 7910530L SE 7910530 A SE7910530 A SE 7910530A SE 7910530 A SE7910530 A SE 7910530A SE 7910530 L SE7910530 L SE 7910530L
Authority
SE
Sweden
Prior art keywords
substrate
conductivity
epitaxial layer
stages
zones
Prior art date
Application number
SE7910530A
Other languages
Unknown language ( )
Swedish (sv)
Inventor
F Bertotti
M Camagni
M Foroni
B Sanasi
Original Assignee
Ates Componenti Elettron
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ates Componenti Elettron filed Critical Ates Componenti Elettron
Publication of SE7910530L publication Critical patent/SE7910530L/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0821—Collector regions of bipolar transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Element Separation (AREA)

Abstract

In a method for producing a plurality of integrated semiconductor devices e.g. vertical, planar transistors on a monocrystalline substrate (1) zones (3) strongly doped with a second type of conductivity which is opposite to that of the substrate are formed by diffusion and then there is grown uniformly over the face (2) of the substrate (1) an epitaxial layer (4,5) into which various doping agents are successively diffused with selective masking to form insulation columns (6), a base zone (7) and an emitter zone (8). This epitaxial growth is divided into two stages, the first of which is to form a first uniformly distributed layer (4) of the same type of conductivity as the substrate (1) and having a thickness which is limited such that in the finished structure the diffused zones (3) are not covered by this first epitaxial layer (4). The second of the stages is to form a second uniformly distributed epitaxial layer (5) of opposite conductivity to that of the substrate (1). <IMAGE>
SE7910530A 1978-12-22 1979-12-20 SET TO MANUFACTURE INTEGRATED CIRCUITS SE7910530L (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT31304/78A IT1101096B (en) 1978-12-22 1978-12-22 IMPROVEMENT OF THE PROCEDURE TO PRODUCE INTEGRATED SEMICONDUCTOR DEVICES AND RESULTING PRODUCT

Publications (1)

Publication Number Publication Date
SE7910530L true SE7910530L (en) 1980-06-23

Family

ID=11233426

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7910530A SE7910530L (en) 1978-12-22 1979-12-20 SET TO MANUFACTURE INTEGRATED CIRCUITS

Country Status (6)

Country Link
JP (1) JPS55108762A (en)
DE (1) DE2951821A1 (en)
FR (1) FR2445022A1 (en)
GB (1) GB2039415A (en)
IT (1) IT1101096B (en)
SE (1) SE7910530L (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0057549B1 (en) * 1981-01-29 1987-07-29 Kabushiki Kaisha Toshiba Semiconductor device
US4902633A (en) * 1988-05-09 1990-02-20 Motorola, Inc. Process for making a bipolar integrated circuit

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51123577A (en) * 1975-04-22 1976-10-28 Toshiba Corp Semiconductor integrating circuit including epitaxial base typ vertica l directional transistor

Also Published As

Publication number Publication date
FR2445022A1 (en) 1980-07-18
DE2951821A1 (en) 1980-07-03
IT1101096B (en) 1985-09-28
GB2039415A (en) 1980-08-06
JPS55108762A (en) 1980-08-21
IT7831304A0 (en) 1978-12-22

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