JPS5678416A - Preparation of thin film - Google Patents

Preparation of thin film

Info

Publication number
JPS5678416A
JPS5678416A JP15524379A JP15524379A JPS5678416A JP S5678416 A JPS5678416 A JP S5678416A JP 15524379 A JP15524379 A JP 15524379A JP 15524379 A JP15524379 A JP 15524379A JP S5678416 A JPS5678416 A JP S5678416A
Authority
JP
Japan
Prior art keywords
layer
plasma cvd
ion plating
thin film
cvd method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15524379A
Other languages
Japanese (ja)
Other versions
JPS5934421B2 (en
Inventor
Hajime Ichiyanagi
Nobuhiko Fujita
Hiroshi Kawai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP54155243A priority Critical patent/JPS5934421B2/en
Publication of JPS5678416A publication Critical patent/JPS5678416A/en
Publication of JPS5934421B2 publication Critical patent/JPS5934421B2/en
Expired legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE: To reduce the preparation time of a thin film consisting of plural layers on a base board and obtan a uniform thin film having a uniform film thickness and quality thereof, by using the plasma CVD method and the ion plating method together.
CONSTITUTION: In preparing a thin film consisting of plural layers on a base board, a layer which requires a long time for preparation by the plasma CVD method is formed by the ion plating method capable of forming the film in a short time. A layer which cannot be doped sufficiently in a short time or whose film thickness and quality become uneven by the ion plating method is formed by the plasma CVD method. For example, in a P-I-N type amorphous silicon film solar cell, a thin P and a thin N layer of about 200Å thickness are formed by the plasma CVD method, and an I layer of about 1μm thickness is formed by the ion plating method. The respective layers can be formed only in about 3min to uniform the time for forming the respective layers.
COPYRIGHT: (C)1981,JPO&Japio
JP54155243A 1979-11-29 1979-11-29 Thin film manufacturing method Expired JPS5934421B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP54155243A JPS5934421B2 (en) 1979-11-29 1979-11-29 Thin film manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54155243A JPS5934421B2 (en) 1979-11-29 1979-11-29 Thin film manufacturing method

Publications (2)

Publication Number Publication Date
JPS5678416A true JPS5678416A (en) 1981-06-27
JPS5934421B2 JPS5934421B2 (en) 1984-08-22

Family

ID=15601656

Family Applications (1)

Application Number Title Priority Date Filing Date
JP54155243A Expired JPS5934421B2 (en) 1979-11-29 1979-11-29 Thin film manufacturing method

Country Status (1)

Country Link
JP (1) JPS5934421B2 (en)

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57162423A (en) * 1981-03-16 1982-10-06 Atlantic Richfield Co Continuously depositing device
JPS5814540A (en) * 1981-07-17 1983-01-27 Nippon Telegr & Teleph Corp <Ntt> Preparing method and device for thin film
JPS5821817A (en) * 1981-07-31 1983-02-08 Nippon Telegr & Teleph Corp <Ntt> Apparatus for forming amorphous multiplayer thin film
JPS5850734A (en) * 1981-09-21 1983-03-25 Fuji Electric Corp Res & Dev Ltd Mass production apparatus for laminated thin film
JPS5850733A (en) * 1981-09-21 1983-03-25 Fuji Electric Corp Res & Dev Ltd Mass-production apparatus of thin film for solar cell
JPS5870524A (en) * 1981-09-28 1983-04-27 エナ−ジ−・コンバ−シヨン・デバイセス・インコ−ポレ−テツド Method of depositing body material on base and system therefor
JPS5877225A (en) * 1981-11-04 1983-05-10 Semiconductor Energy Lab Co Ltd Manufacturing device of semiconductor device
JPS58174570A (en) * 1982-03-29 1983-10-13 エナージー・コンバーション・デバイセス・インコーポレーテッド Glow discharge deposition device containing non-horizontally placed cathode
JPS59123840A (en) * 1982-12-29 1984-07-17 Konishiroku Photo Ind Co Ltd Manufacture of material for exposing mask
JPS59155123A (en) * 1982-12-22 1984-09-04 エナ−ジ−・コンバ−シヨン・デバイセス・インコ−ポレ−テツド Glow discharge depositing device
JPS59155124A (en) * 1982-12-22 1984-09-04 エナ−ジ−・コンバ−シヨン・デバイセス・インコ−ポレ−テツド Upstream cathode assembly
JPS59219927A (en) * 1983-05-27 1984-12-11 Fuji Electric Corp Res & Dev Ltd Plasma cvd device
JPS6043819A (en) * 1983-08-19 1985-03-08 Semiconductor Energy Lab Co Ltd Method for vapor-phase reaction
JPS6122622A (en) * 1980-05-19 1986-01-31 エナ−ジ−・コンバ−シヨン・デバイセス・インコ−ポレ−テツド Method and device for producing photovoltaic power panel
JPS6379966A (en) * 1986-09-20 1988-04-09 Nippon Steel Corp Continuous composite coating equipment for strip
JPH0738125A (en) * 1980-05-19 1995-02-07 Energy Conversion Devices Inc Method and apparatus for manufacturing solar cell, method and chamber for depositing amorphous silicon
JPH0758354A (en) * 1981-11-16 1995-03-03 Univ Delaware Manufacture of thin film photo-cell device
JP5076172B2 (en) * 2002-05-24 2012-11-21 スリーディー システムズ インコーポレーテッド Injectable composition

Cited By (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6122622A (en) * 1980-05-19 1986-01-31 エナ−ジ−・コンバ−シヨン・デバイセス・インコ−ポレ−テツド Method and device for producing photovoltaic power panel
JPH0738125A (en) * 1980-05-19 1995-02-07 Energy Conversion Devices Inc Method and apparatus for manufacturing solar cell, method and chamber for depositing amorphous silicon
JPH0355977B2 (en) * 1980-05-19 1991-08-27
JPS57162423A (en) * 1981-03-16 1982-10-06 Atlantic Richfield Co Continuously depositing device
JPS5814540A (en) * 1981-07-17 1983-01-27 Nippon Telegr & Teleph Corp <Ntt> Preparing method and device for thin film
JPS5821817A (en) * 1981-07-31 1983-02-08 Nippon Telegr & Teleph Corp <Ntt> Apparatus for forming amorphous multiplayer thin film
JPS5850734A (en) * 1981-09-21 1983-03-25 Fuji Electric Corp Res & Dev Ltd Mass production apparatus for laminated thin film
JPS5850733A (en) * 1981-09-21 1983-03-25 Fuji Electric Corp Res & Dev Ltd Mass-production apparatus of thin film for solar cell
JPH0338731B2 (en) * 1981-09-28 1991-06-11 Enaajii Konbaajon Debaisesu Inc
JPS5870524A (en) * 1981-09-28 1983-04-27 エナ−ジ−・コンバ−シヨン・デバイセス・インコ−ポレ−テツド Method of depositing body material on base and system therefor
JPS5877225A (en) * 1981-11-04 1983-05-10 Semiconductor Energy Lab Co Ltd Manufacturing device of semiconductor device
JPH0758354A (en) * 1981-11-16 1995-03-03 Univ Delaware Manufacture of thin film photo-cell device
JPH0468390B2 (en) * 1982-03-29 1992-11-02 Enaajii Konbaajon Debaisesu Inc
JPS58174570A (en) * 1982-03-29 1983-10-13 エナージー・コンバーション・デバイセス・インコーポレーテッド Glow discharge deposition device containing non-horizontally placed cathode
JPS59155123A (en) * 1982-12-22 1984-09-04 エナ−ジ−・コンバ−シヨン・デバイセス・インコ−ポレ−テツド Glow discharge depositing device
JPS59155124A (en) * 1982-12-22 1984-09-04 エナ−ジ−・コンバ−シヨン・デバイセス・インコ−ポレ−テツド Upstream cathode assembly
JPS59123840A (en) * 1982-12-29 1984-07-17 Konishiroku Photo Ind Co Ltd Manufacture of material for exposing mask
JPH0437422B2 (en) * 1982-12-29 1992-06-19 Konishiroku Photo Ind
JPH0547970B2 (en) * 1983-05-27 1993-07-20 Fuji Denki Sogo Kenkyusho Kk
JPS59219927A (en) * 1983-05-27 1984-12-11 Fuji Electric Corp Res & Dev Ltd Plasma cvd device
JPS6043819A (en) * 1983-08-19 1985-03-08 Semiconductor Energy Lab Co Ltd Method for vapor-phase reaction
JPS6379966A (en) * 1986-09-20 1988-04-09 Nippon Steel Corp Continuous composite coating equipment for strip
JP5076172B2 (en) * 2002-05-24 2012-11-21 スリーディー システムズ インコーポレーテッド Injectable composition

Also Published As

Publication number Publication date
JPS5934421B2 (en) 1984-08-22

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