JPS56157067A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS56157067A JPS56157067A JP6018580A JP6018580A JPS56157067A JP S56157067 A JPS56157067 A JP S56157067A JP 6018580 A JP6018580 A JP 6018580A JP 6018580 A JP6018580 A JP 6018580A JP S56157067 A JPS56157067 A JP S56157067A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- electrode
- type gaas
- layer
- rear side
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 abstract 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 3
- 239000002184 metal Substances 0.000 abstract 2
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- 239000000956 alloy Substances 0.000 abstract 1
- 239000004020 conductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To make a substrate have a structure in which a source bonding pad is removed from the surface of the substrate, to effectively utilize a chip area and to improve the reliability by a method wherein a source electrode is taken from the rear side of the substrate. CONSTITUTION:An N type GaAs layer 16 and a high density P type GaAs layer 17 are formed on a high density P type GaAs substrate 15. Then, an insulating film 18 is formed, the source electrode 19 and a drain electrode 20 are formed, and metal and the semiconductor are made alloy. In the following, a gate electrode 22 and an outgoing electrode 21 of a drain are formed by the same metal, and finally, a good conductor metallic layer such as an Au layer is formed all over the rear side of the semiconductor substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6018580A JPS56157067A (en) | 1980-05-07 | 1980-05-07 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6018580A JPS56157067A (en) | 1980-05-07 | 1980-05-07 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS56157067A true JPS56157067A (en) | 1981-12-04 |
Family
ID=13134843
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6018580A Pending JPS56157067A (en) | 1980-05-07 | 1980-05-07 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56157067A (en) |
-
1980
- 1980-05-07 JP JP6018580A patent/JPS56157067A/en active Pending
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