JPS54147781A - Manufacture for compound semicondutor device - Google Patents

Manufacture for compound semicondutor device

Info

Publication number
JPS54147781A
JPS54147781A JP5619478A JP5619478A JPS54147781A JP S54147781 A JPS54147781 A JP S54147781A JP 5619478 A JP5619478 A JP 5619478A JP 5619478 A JP5619478 A JP 5619478A JP S54147781 A JPS54147781 A JP S54147781A
Authority
JP
Japan
Prior art keywords
frame
pellet
electrode
manufacture
compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5619478A
Other languages
Japanese (ja)
Other versions
JPS6033301B2 (en
Inventor
Susumu Yoshida
Kotaro Mitsui
Josuke Nakada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP53056194A priority Critical patent/JPS6033301B2/en
Publication of JPS54147781A publication Critical patent/JPS54147781A/en
Publication of JPS6033301B2 publication Critical patent/JPS6033301B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)
  • Die Bonding (AREA)

Abstract

PURPOSE: To make easy the bonding of high reliability, by forming the Ni thick film on the Cu frame, laminating metal film on the junction of the semiconductor pellet, increasing the temperature of the frame, and contacting Ge(Si or Sn) on the pellet electrode with Au.
CONSTITUTION: On the Cu frame 5, the Ni thick film 6 of 2.5 to 5μ is plated, Au plating is made with the thickness more than 1.5 times the pellet area and more than 2.5μ, and the Cu frame is heated more than 356°C (eutetic point between Au and Ge). The Ge layer 4 coated on the electrode of the GaAs pellet 1 is contacted with the Au layer of the frame and it is lightly depressed. Ge4 and Au7 are alloyed and the electrode 3 of pellet and the Cu frame are molten. With this method, without injuring the electric performance, highly reliable bonding can be made with good operationability.
COPYRIGHT: (C)1979,JPO&Japio
JP53056194A 1978-05-11 1978-05-11 Method for manufacturing compound semiconductor device Expired JPS6033301B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP53056194A JPS6033301B2 (en) 1978-05-11 1978-05-11 Method for manufacturing compound semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP53056194A JPS6033301B2 (en) 1978-05-11 1978-05-11 Method for manufacturing compound semiconductor device

Publications (2)

Publication Number Publication Date
JPS54147781A true JPS54147781A (en) 1979-11-19
JPS6033301B2 JPS6033301B2 (en) 1985-08-02

Family

ID=13020293

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53056194A Expired JPS6033301B2 (en) 1978-05-11 1978-05-11 Method for manufacturing compound semiconductor device

Country Status (1)

Country Link
JP (1) JPS6033301B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2528497Y2 (en) * 1987-12-17 1997-03-12 株式会社白山製作所 Flat optical fiber stripper

Also Published As

Publication number Publication date
JPS6033301B2 (en) 1985-08-02

Similar Documents

Publication Publication Date Title
GB1457806A (en) Semiconductor device manufacture
JPS5586130A (en) Connection of semiconductor element
JPS5571052A (en) Substrate for semiconductor device
JPS54147781A (en) Manufacture for compound semicondutor device
JPS54153573A (en) Manufacture for compound semiconductor device
JPS57164552A (en) Lead-frame for semiconductor device
JPS57109350A (en) Semiconductor device
JPS568851A (en) Lead wire connecting method of semiconductor device
JPS56169326A (en) Manufacture of semiconductor device
JPS5318974A (en) Semiconductor device for millimeter band mixer
JPS54126466A (en) Semiconductor device
JPS55151354A (en) Forming method of electrode for semiconductor device
JPS5318957A (en) Electrode structure of semiconductor device
JPS5324268A (en) Pro duction of semiconductor device and bonding wire for the same
JPS5313875A (en) Semiconductor device
JPS56157067A (en) Semiconductor device
JPS54152963A (en) Semiconductor device
JPS52129376A (en) Semiconductor device having laminated metal electrode
JPS56164557A (en) Tin bump
JPS55130131A (en) Manufacture of semiconductor device
JPS5575226A (en) Manufacturing semiconductor device
JPS5414675A (en) Bonding method for semiconductor elements
JPS5295171A (en) Electrode for semi-conductor
JPS556839A (en) Semiconductor device
JPS56148836A (en) Forming method for back electrode of semiconductor wafer