JPS55107270A - Manufacture of field-effect transistor - Google Patents
Manufacture of field-effect transistorInfo
- Publication number
- JPS55107270A JPS55107270A JP1448179A JP1448179A JPS55107270A JP S55107270 A JPS55107270 A JP S55107270A JP 1448179 A JP1448179 A JP 1448179A JP 1448179 A JP1448179 A JP 1448179A JP S55107270 A JPS55107270 A JP S55107270A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- gaas
- evaporation
- thin
- whole surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005669 field effect Effects 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 6
- 230000008020 evaporation Effects 0.000 abstract 3
- 238000001704 evaporation Methods 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 239000010409 thin film Substances 0.000 abstract 2
- 239000000853 adhesive Substances 0.000 abstract 1
- 230000001070 adhesive effect Effects 0.000 abstract 1
- 230000004888 barrier function Effects 0.000 abstract 1
- 229910003460 diamond Inorganic materials 0.000 abstract 1
- 239000010432 diamond Substances 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
- H01L29/8126—Thin film MESFET's
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To reduce a leakage current and improve the properties by laying polycrystalline GaAs thin film between the activated layer constituting a Schottky barrier gate FET consisting of GaAs and a heatproof insulating thin film. CONSTITUTION:An AlxGa1-xAs layer 2, and an n-type GaAs activated layer are laminated on GaAs substrate 1 being grown epitaxially and thereon a polycrustalline GaAs layer 4, which is thin about 100Angstrom , is attached being evaporated. Next, a diamond heat sink plate 6 is made to adhere to this layer 4 through heatproof insulating inorganic adhesives 5 mainly consisting of silica and almina, removing only the layer 2 by etching in sulusion of HF 50% and peel off the substrate 1 thereon. Thereafter anodic oxidation is performed to make the layer 3 evenly thin, the whole surface is alloyed with AuGe-Ni through evaporation, and is selectively etched to form the source and drain electrodes 7 and 8. Further Al is attached through evaporation being lifted-off to gain the electrode 9, the whole surface is covered with polycrystalline GaAs layer 10 through flash evaporation to be passivated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1448179A JPS55107270A (en) | 1979-02-09 | 1979-02-09 | Manufacture of field-effect transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1448179A JPS55107270A (en) | 1979-02-09 | 1979-02-09 | Manufacture of field-effect transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS55107270A true JPS55107270A (en) | 1980-08-16 |
Family
ID=11862237
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1448179A Pending JPS55107270A (en) | 1979-02-09 | 1979-02-09 | Manufacture of field-effect transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55107270A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5330616A (en) * | 1988-02-01 | 1994-07-19 | Semiconductor Energy Laboratory Co., Ltd. | Electric device provided with carbon pattern structure and manufacturing method for the same |
| US6115090A (en) * | 1997-03-26 | 2000-09-05 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| US6927826B2 (en) | 1997-03-26 | 2005-08-09 | Semiconductor Energy Labaratory Co., Ltd. | Display device |
| US7508033B2 (en) | 1998-04-24 | 2009-03-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device with diamond-like carbon film on backside of substrate |
| CN102142409A (en) * | 2010-01-28 | 2011-08-03 | 通用汽车环球科技运作有限责任公司 | Non-direct bond copper isolated lateral wide band gap semiconductor device |
-
1979
- 1979-02-09 JP JP1448179A patent/JPS55107270A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5330616A (en) * | 1988-02-01 | 1994-07-19 | Semiconductor Energy Laboratory Co., Ltd. | Electric device provided with carbon pattern structure and manufacturing method for the same |
| US6115090A (en) * | 1997-03-26 | 2000-09-05 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| US6593990B1 (en) | 1997-03-26 | 2003-07-15 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| US6927826B2 (en) | 1997-03-26 | 2005-08-09 | Semiconductor Energy Labaratory Co., Ltd. | Display device |
| US7190428B2 (en) | 1997-03-26 | 2007-03-13 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| US7436463B2 (en) | 1997-03-26 | 2008-10-14 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| US7508033B2 (en) | 1998-04-24 | 2009-03-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device with diamond-like carbon film on backside of substrate |
| CN102142409A (en) * | 2010-01-28 | 2011-08-03 | 通用汽车环球科技运作有限责任公司 | Non-direct bond copper isolated lateral wide band gap semiconductor device |
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