JPS57198664A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57198664A
JPS57198664A JP8402781A JP8402781A JPS57198664A JP S57198664 A JPS57198664 A JP S57198664A JP 8402781 A JP8402781 A JP 8402781A JP 8402781 A JP8402781 A JP 8402781A JP S57198664 A JPS57198664 A JP S57198664A
Authority
JP
Japan
Prior art keywords
layer
insulating
semi
gaas
active layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8402781A
Other languages
Japanese (ja)
Inventor
Masao Shimada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP8402781A priority Critical patent/JPS57198664A/en
Publication of JPS57198664A publication Critical patent/JPS57198664A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Formation Of Insulating Films (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To decrease surface leakage currents and to enhance the withstanding voltage in the reverse direction by providing a semi-insulating or highly resistive compound semiconductor layer on the surface of the active region of a compound semiconductor, and forming an insulating protecting film on said semiconductor layer. CONSTITUTION:On the surface of a semi-insulating substrate 1, a GaAS active layer 2 with the thickness of about 0.5mum and a semi-insulating or highly resistive GaAs layer 8 with the thickness of about 0.1mum are layered and deposited by a molecular beam epitaxial growing method. Mesa etching is performed, with the region including the active layer 2 having the desired shape being left. Then the part of the layer which is to become a gate part is removed by wet type or dry type etching. An Al electrode 4 which is to become Schottky gate electrode is deposited on the exposed active layer 2. Thereafter source and drain ohmic layers 6 are diffused and formed, and source and drain electrodes 5 are attached thereon, respectively. The entire surface of the substrate 1 is coated by Si3N4 film 7 by a plasma CVD method. Thus the characteristics of the FET wherein GaAs and the like are used are improved to the great extent.
JP8402781A 1981-06-01 1981-06-01 Semiconductor device Pending JPS57198664A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8402781A JPS57198664A (en) 1981-06-01 1981-06-01 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8402781A JPS57198664A (en) 1981-06-01 1981-06-01 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS57198664A true JPS57198664A (en) 1982-12-06

Family

ID=13819063

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8402781A Pending JPS57198664A (en) 1981-06-01 1981-06-01 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57198664A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59172777A (en) * 1983-03-23 1984-09-29 Oki Electric Ind Co Ltd Semiconductor device
JPH04211136A (en) * 1991-03-29 1992-08-03 Nec Corp Manufacture of field effect transistor

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50119580A (en) * 1974-03-02 1975-09-19
JPS52128063A (en) * 1976-04-21 1977-10-27 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS57128070A (en) * 1981-01-30 1982-08-09 Fujitsu Ltd Field-effect transistor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50119580A (en) * 1974-03-02 1975-09-19
JPS52128063A (en) * 1976-04-21 1977-10-27 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS57128070A (en) * 1981-01-30 1982-08-09 Fujitsu Ltd Field-effect transistor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59172777A (en) * 1983-03-23 1984-09-29 Oki Electric Ind Co Ltd Semiconductor device
JPH04211136A (en) * 1991-03-29 1992-08-03 Nec Corp Manufacture of field effect transistor

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