JPS5636170A - Manufacture of field-effect semiconductor device - Google Patents
Manufacture of field-effect semiconductor deviceInfo
- Publication number
- JPS5636170A JPS5636170A JP11131579A JP11131579A JPS5636170A JP S5636170 A JPS5636170 A JP S5636170A JP 11131579 A JP11131579 A JP 11131579A JP 11131579 A JP11131579 A JP 11131579A JP S5636170 A JPS5636170 A JP S5636170A
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- drain current
- layer
- flow
- manufacture
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 230000005669 field effect Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 4
- 230000003647 oxidation Effects 0.000 abstract 2
- 238000007254 oxidation reaction Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 1
- 238000012544 monitoring process Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To enable easy manufacture with high reproducibility, by causing a drain current to flow through a GaAs layer and by effecting the plasma oxidation of a channel region while monitoring the current to produce an oxide film. CONSTITUTION:An n type GaAs layer 2 is epitaxially grown on a semiinsulating GaAs substrate 1. A plasma-oxidized film 6 is produced. As a result, a depletion layer 5 is extended. In that state, a drain current can be caused to flow. Plasma oxidation is continued to increase the thickness of the oxide film 6 to such an extent that no drain current flows. At that time, the bottom of the depletion layer 5 is in contact with the surface of the substrate 1. After the oxide film 6 is removed, a Schottky gate electrode 4 is manufactured. Said procedure results in providing a normally OFF-type GaAs.SB.FET.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11131579A JPS5636170A (en) | 1979-08-31 | 1979-08-31 | Manufacture of field-effect semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11131579A JPS5636170A (en) | 1979-08-31 | 1979-08-31 | Manufacture of field-effect semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5636170A true JPS5636170A (en) | 1981-04-09 |
Family
ID=14558095
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11131579A Pending JPS5636170A (en) | 1979-08-31 | 1979-08-31 | Manufacture of field-effect semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5636170A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5892274A (en) * | 1981-11-28 | 1983-06-01 | Mitsubishi Electric Corp | Manufacture of field effect transistor |
| EP0723300A2 (en) * | 1995-01-18 | 1996-07-24 | Murata Manufacturing Co., Ltd. | Semiconductor device with Schattky electrode |
| EP0744773A2 (en) * | 1995-05-25 | 1996-11-27 | Murata Manufacturing Co., Ltd. | Semiconductor device having a plasma-processed layer and the method of manufacturing the same |
-
1979
- 1979-08-31 JP JP11131579A patent/JPS5636170A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5892274A (en) * | 1981-11-28 | 1983-06-01 | Mitsubishi Electric Corp | Manufacture of field effect transistor |
| EP0723300A2 (en) * | 1995-01-18 | 1996-07-24 | Murata Manufacturing Co., Ltd. | Semiconductor device with Schattky electrode |
| EP0723300A3 (en) * | 1995-01-18 | 1996-11-20 | Murata Manufacturing Co | Semiconductor device with Schattky electrode |
| EP0744773A2 (en) * | 1995-05-25 | 1996-11-27 | Murata Manufacturing Co., Ltd. | Semiconductor device having a plasma-processed layer and the method of manufacturing the same |
| EP0744773A3 (en) * | 1995-05-25 | 1997-12-29 | Murata Manufacturing Co., Ltd. | Semiconductor device having a plasma-processed layer and the method of manufacturing the same |
| US6458675B1 (en) | 1995-05-25 | 2002-10-01 | Murata Manufacturing Co., Ltd. | Semiconductor device having a plasma-processed layer and method of manufacturing the same |
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