JPS5486262A - Electron beam device - Google Patents

Electron beam device

Info

Publication number
JPS5486262A
JPS5486262A JP15409077A JP15409077A JPS5486262A JP S5486262 A JPS5486262 A JP S5486262A JP 15409077 A JP15409077 A JP 15409077A JP 15409077 A JP15409077 A JP 15409077A JP S5486262 A JPS5486262 A JP S5486262A
Authority
JP
Japan
Prior art keywords
electron beam
region
emitter
mask
exposed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15409077A
Other languages
Japanese (ja)
Other versions
JPS5914221B2 (en
Inventor
Tadahiro Takigawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP52154090A priority Critical patent/JPS5914221B2/en
Priority to US05/971,043 priority patent/US4199689A/en
Publication of JPS5486262A publication Critical patent/JPS5486262A/en
Publication of JPS5914221B2 publication Critical patent/JPS5914221B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE: To form an accurate pattern on a mask by determining a beam diameter or the dozing amount corresponding to an exposed region and by exposing the corresponding region by a desired electron beam.
CONSTITUTION: Electron gun 2 consists of grounded anode 36, Wehnelt cylinder 38 applied with a high negative voltage, and emitter 40 focusing electrons, and emitter 40 uses a prismatic electrode with its tip pointed relatively. Adjusting a current flowing to heater 42 or/and a high voltage between emitter 40 and Wehnelt cylinder 38 varies the diameter of the electron beam at crossover point 24. Then the projective image at point 24 is projected on the photo resist on mask 22 and the region of the photo resist to be exposed changes. In this case, the electron beam diameter at point 24 is set according to the 1st and 2nd operation modes of CPU34 and the fixed region is exposed through the x-directional scanning on mask 22.
COPYRIGHT: (C)1979,JPO&Japio
JP52154090A 1977-12-21 1977-12-21 electron beam device Expired JPS5914221B2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP52154090A JPS5914221B2 (en) 1977-12-21 1977-12-21 electron beam device
US05/971,043 US4199689A (en) 1977-12-21 1978-12-19 Electron beam exposing method and electron beam apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52154090A JPS5914221B2 (en) 1977-12-21 1977-12-21 electron beam device

Publications (2)

Publication Number Publication Date
JPS5486262A true JPS5486262A (en) 1979-07-09
JPS5914221B2 JPS5914221B2 (en) 1984-04-03

Family

ID=15576670

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52154090A Expired JPS5914221B2 (en) 1977-12-21 1977-12-21 electron beam device

Country Status (1)

Country Link
JP (1) JPS5914221B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58106748A (en) * 1981-12-18 1983-06-25 Jeol Ltd Ion gun
JPS58135641A (en) * 1982-02-06 1983-08-12 Jeol Ltd Electron beam exposure

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58106748A (en) * 1981-12-18 1983-06-25 Jeol Ltd Ion gun
JPH0228221B2 (en) * 1981-12-18 1990-06-22 Nippon Electron Optics Lab
JPS58135641A (en) * 1982-02-06 1983-08-12 Jeol Ltd Electron beam exposure

Also Published As

Publication number Publication date
JPS5914221B2 (en) 1984-04-03

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