JPS5760842A - Electron beam exposure device - Google Patents

Electron beam exposure device

Info

Publication number
JPS5760842A
JPS5760842A JP13659580A JP13659580A JPS5760842A JP S5760842 A JPS5760842 A JP S5760842A JP 13659580 A JP13659580 A JP 13659580A JP 13659580 A JP13659580 A JP 13659580A JP S5760842 A JPS5760842 A JP S5760842A
Authority
JP
Japan
Prior art keywords
theta
deflector
parallel
slipping
widths
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13659580A
Other languages
Japanese (ja)
Other versions
JPS6313337B2 (en
Inventor
Mamoru Nakasuji
Sadao Sasaki
Mineo Goto
Ryoichi Yoshikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP13659580A priority Critical patent/JPS5760842A/en
Publication of JPS5760842A publication Critical patent/JPS5760842A/en
Publication of JPS6313337B2 publication Critical patent/JPS6313337B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To adjust the parallel in a short time automatically with high accuracy, by detecting parallel slipping between two aperture masks and a beam formation deflector on various conditions of a beam dimension. CONSTITUTION:A beam dimension is meaausred with fine particle 9b with high emission of reflected electron provided for a target 9. An X-deflector 3a is given constant voltage Vx. A Y-deflector 3b is scanned with beam in X-direction on two conditions, for example, of widths 4mum and 1mum. And beam widths Lx(4) and Lx(1) are measured. The parallel slipping theta will be obtained by theta=Lx(4)-Lx(1)/4-1, if the deflectors 3a and 3b are correct in perpendicular accuracy. Each deflector is given each voltage of Vx'=Vx+VyQ and Vy'=Vy-Vx, while a circuit 6 converts the values of theta(theta<<1) for the coordinates. And the slipping is corrected. This enables parallel correction in a short time with high accuracy.
JP13659580A 1980-09-30 1980-09-30 Electron beam exposure device Granted JPS5760842A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13659580A JPS5760842A (en) 1980-09-30 1980-09-30 Electron beam exposure device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13659580A JPS5760842A (en) 1980-09-30 1980-09-30 Electron beam exposure device

Publications (2)

Publication Number Publication Date
JPS5760842A true JPS5760842A (en) 1982-04-13
JPS6313337B2 JPS6313337B2 (en) 1988-03-25

Family

ID=15178965

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13659580A Granted JPS5760842A (en) 1980-09-30 1980-09-30 Electron beam exposure device

Country Status (1)

Country Link
JP (1) JPS5760842A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6221901A (en) * 1985-07-18 1987-01-30 日本航空株式会社 Track structure of attraction type magnetic float vehicle
US4684809A (en) * 1984-09-29 1987-08-04 Kabushiki Kaisha Toshiba Method of adjusting optical column in energy beam exposure system

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4684809A (en) * 1984-09-29 1987-08-04 Kabushiki Kaisha Toshiba Method of adjusting optical column in energy beam exposure system
JPS6221901A (en) * 1985-07-18 1987-01-30 日本航空株式会社 Track structure of attraction type magnetic float vehicle

Also Published As

Publication number Publication date
JPS6313337B2 (en) 1988-03-25

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