JPS5250289A - Method of irradiating corpuscular beam - Google Patents

Method of irradiating corpuscular beam

Info

Publication number
JPS5250289A
JPS5250289A JP51124780A JP12478076A JPS5250289A JP S5250289 A JPS5250289 A JP S5250289A JP 51124780 A JP51124780 A JP 51124780A JP 12478076 A JP12478076 A JP 12478076A JP S5250289 A JPS5250289 A JP S5250289A
Authority
JP
Japan
Prior art keywords
irradiating
corpuscular beam
corpuscular
irradiating corpuscular
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP51124780A
Other languages
English (en)
Inventor
Ankaa Kurausu
Rishiyuke Burukuruhato
Eeruman Andoreasu
Reshiyuke Herumuuto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of JPS5250289A publication Critical patent/JPS5250289A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. programme control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3007—Electron or ion-optical systems

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Beam Exposure (AREA)
  • Electron Sources, Ion Sources (AREA)
JP51124780A 1975-10-17 1976-10-18 Method of irradiating corpuscular beam Pending JPS5250289A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2547079A DE2547079C3 (de) 1975-10-17 1975-10-17 Verfahren zur Korpuskularbestrahlung eines Präparats

Publications (1)

Publication Number Publication Date
JPS5250289A true JPS5250289A (en) 1977-04-22

Family

ID=5959673

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51124780A Pending JPS5250289A (en) 1975-10-17 1976-10-18 Method of irradiating corpuscular beam

Country Status (6)

Country Link
US (1) US4136285A (ja)
JP (1) JPS5250289A (ja)
DE (1) DE2547079C3 (ja)
FR (1) FR2328281A1 (ja)
GB (1) GB1567635A (ja)
NL (1) NL7611269A (ja)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2739502C3 (de) * 1977-09-02 1980-07-03 Ibm Deutschland Gmbh, 7000 Stuttgart Verfahren zur Belichtung durch Korpuskularstrahlen-Schattenwurf und Vorrichtung zur Durchführung des Verfahrens
JPS5463681A (en) * 1977-10-29 1979-05-22 Nippon Aviotronics Kk Electron beam exposure device
JPS588130B2 (ja) * 1978-05-08 1983-02-14 ロツクウエル インタ−ナシヨナル コ−ポレ−シヨン 高分解能の微細ラインリソグラフイ構造を作るための方法
DE2837590A1 (de) * 1978-08-29 1980-03-13 Ibm Deutschland Verfahren zur schattenwurfbelichtung
DE2841124C2 (de) * 1978-09-21 1984-09-13 Siemens AG, 1000 Berlin und 8000 München Verfahren zum Herstellen von elektronischen Halbleiterbauelementen durch Röntgen-Lithographie
DE3138744A1 (de) * 1981-09-29 1983-04-07 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von halbleitervorrichtungen
EP0122563B1 (de) * 1983-04-14 1988-03-30 Siemens Aktiengesellschaft Verfahren zur Abbildung von elektrischen Sperrschichten (pn-Übergängen) in Halbleitern durch Verarbeitung von korpuskularstrahlinduzierten Signalen im Raster-Korpuskularmikroskop
DE3410885A1 (de) * 1984-03-24 1985-10-03 Ibm Deutschland Gmbh, 7000 Stuttgart Fehlerkorrigierte korpuskularstrahllithographie
US4757208A (en) * 1986-03-07 1988-07-12 Hughes Aircraft Company Masked ion beam lithography system and method
NL8702570A (nl) * 1987-10-29 1989-05-16 Philips Nv Geladen deeltjes bundel apparaat.
DE69615721T2 (de) * 1995-03-17 2002-08-08 Ebara Corp., Tokio/Tokyo Herstellungsverfahren mit einem Energiebündel
AT406100B (de) * 1996-08-08 2000-02-25 Thallner Erich Kontaktbelichtungsverfahren zur herstellung von halbleiterbausteinen
US7423269B1 (en) * 2005-02-26 2008-09-09 Kla-Tencor Technologies Corporation Automated feature analysis with off-axis tilting
EP3016130A1 (en) * 2014-10-28 2016-05-04 Fei Company Composite scan path in a charged particle microscope

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3770934A (en) * 1971-10-29 1973-11-06 Machlett Lab Inc Electron beam heating apparatus
US3914608A (en) * 1973-12-19 1975-10-21 Westinghouse Electric Corp Rapid exposure of micropatterns with a scanning electron microscope
DE2446789A1 (de) * 1974-09-27 1976-09-02 Siemens Ag Korpuskularstrahloptisches geraet zur korpuskelbestrahlung eines praeparats
US3924136A (en) * 1975-02-18 1975-12-02 Stanford Research Inst Charged particle apodized pattern imaging and exposure system

Also Published As

Publication number Publication date
GB1567635A (en) 1980-05-21
FR2328281A1 (fr) 1977-05-13
NL7611269A (nl) 1977-04-19
US4136285A (en) 1979-01-23
DE2547079A1 (de) 1977-04-21
DE2547079C3 (de) 1979-12-06
FR2328281B1 (ja) 1980-08-22
DE2547079B2 (de) 1979-04-12

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