JPH0339841U - - Google Patents

Info

Publication number
JPH0339841U
JPH0339841U JP10092989U JP10092989U JPH0339841U JP H0339841 U JPH0339841 U JP H0339841U JP 10092989 U JP10092989 U JP 10092989U JP 10092989 U JP10092989 U JP 10092989U JP H0339841 U JPH0339841 U JP H0339841U
Authority
JP
Japan
Prior art keywords
source electrode
via hole
electrode portion
recess
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10092989U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP10092989U priority Critical patent/JPH0339841U/ja
Publication of JPH0339841U publication Critical patent/JPH0339841U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)

Description

【図面の簡単な説明】[Brief explanation of drawings]

第1図a〜fは、本考案の半導体装置の製造方
法の一実施例を説明するための、工程順に示した
素子断面図、第2図a〜dは、従来の技術による
一例を説明するための工程順に示した素子断面図
である。 1……基板、1a……凹部、2,2a,2b…
…フオトレジスト、3……ソース電極、4……バ
イアホール、5……バイアホールメタル。
1A to 1F are cross-sectional views of elements shown in the order of steps to explain an embodiment of the method for manufacturing a semiconductor device of the present invention, and FIGS. 2A to 2D are sectional views of an element according to a conventional technique. FIG. 1...Substrate, 1a...Recess, 2, 2a, 2b...
...Photoresist, 3...Source electrode, 4...Via hole, 5...Via hole metal.

Claims (1)

【実用新案登録請求の範囲】 ソース電極部にバイアホール構造を有する半導
体装置において、 ソース電極部が、素子の表面側の凹部に形成さ
れ、裏面側に前記ソース電極に達するバイアホー
ルを有することを特徴とする半導体装置。
[Claims for Utility Model Registration] In a semiconductor device having a via hole structure in a source electrode portion, the source electrode portion is formed in a recess on the front side of the element and has a via hole reaching the source electrode on the back side. Characteristic semiconductor devices.
JP10092989U 1989-08-29 1989-08-29 Pending JPH0339841U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10092989U JPH0339841U (en) 1989-08-29 1989-08-29

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10092989U JPH0339841U (en) 1989-08-29 1989-08-29

Publications (1)

Publication Number Publication Date
JPH0339841U true JPH0339841U (en) 1991-04-17

Family

ID=31649906

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10092989U Pending JPH0339841U (en) 1989-08-29 1989-08-29

Country Status (1)

Country Link
JP (1) JPH0339841U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001311999A (en) * 2000-04-28 2001-11-09 Seed:Kk Outdoor projector and usage of the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001311999A (en) * 2000-04-28 2001-11-09 Seed:Kk Outdoor projector and usage of the same

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