JP2007048876A - Manufacturing method for semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To prevent the deterioration of the productivities of semiconductor devices generated due to outer-frame chips in a substrate cutting process in which the substrate loading a plurality of the semiconductor devices is stuck on a UV tape and cut and separated into individual semiconductor device. <P>SOLUTION: The rear of a first UV tape 1 with the stuck substrate 3 loading a plurality of the semiconductor devices and the adhesive surface of a second UV tape 6 with stuck masks 8 for guarding an UV irradiation are faced oppositely, and the first UV tape 1 and the second UV tape 6 are superposed and arranged. The adhesive strength of the adhesive surface excepting a region in which a plurality of the semiconductor devices on the first UV tape 1 are placed is lowered by a first UV irradiation from the rear side of the first UV tape 1 through the second UV tape 6, and the substrate 3 is cut along a cutting line and the outer frame sections 3a of the substrate 3 are removed. The adhesive strength of the adhesive surface of the first UV tape 1 is lowered by a second UV irradiation from the rear side of the first UV tape 1 to the first UV tape 1. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a manufacturing technique of a semiconductor device, and in particular, is applied to a substrate cutting process in which a substrate on which two or more semiconductor devices are formed is attached to a cutting tape and cut into individual semiconductor devices. And effective technology.

  For example, using a cutting device, a required number of markers are detected before mounting a sealed substrate, in which a cutting site pattern is pre-aligned, on an alignment stage provided on the cutting device separately from the cutting stage. Then, a substrate cutting method is known in which a sealed substrate is mounted on a cutting stage and the sealed substrate is cut along a cutting site (see Patent Document 1).

In addition, a dust collection block that holds the main plate on which the printed circuit board is placed and has a space portion therein, and an intake portion that is connected to the dust collection block and controls the space portion of the dust collection block to a negative pressure, The main plate has a through-hole connected to the space of the dust collection block corresponding to the planned cutting portion of the printed circuit board, and collects the cutting dust generated when the planned cutting portion of the printed circuit board is cut into the intake section. A printed circuit board cutting device is known (see Patent Document 2).
JP 2004-335862 A (paragraphs [0018] to [0020]) JP 2004-17183 A (paragraph [0028], FIG. 6)

  A cutting blade (blade) that rotates at high speed is attached to a cutting tape (for example, UV (Ultra Violet) tape) as one method for cutting a substrate in which a plurality of semiconductor devices are sealed with resin. There is a tape method in which a predetermined portion of a resin-sealed substrate is brought into contact with and cut. For example, an annular frame to which a UV tape is fixed in advance is prepared, and a resin-sealed substrate is attached to the UV tape with the substrate side as the upper surface. Subsequently, the resin sealing substrate is cut vertically and horizontally along the cutting line using a cutting blade, and the resin sealing substrate is separated into individual semiconductor devices. Since the separated semiconductor device is fixed to the frame via the UV tape, it maintains the aligned state. After that, by irradiating the resin-sealed substrate with UV, the adhesive force of the surface of the UV tape in contact with each semiconductor device is reduced to make each semiconductor device easily peeled off from the UV tape, and the semiconductor device is picked up from the UV tape. ing.

  As another cutting method of the resin-sealed substrate, there is a mold dividing method in which a portion to be cut is cut into a predetermined shape by a press apparatus using a cutting die jig. Although this method is advantageous in terms of productivity, it is necessary to manufacture and handle a dedicated mold jig for various types of resin-encapsulated substrates, avoiding an increase in manufacturing costs for equipment. I can't. On the other hand, the tape method described above, in which the resin-sealed substrate is attached to a UV tape and cut, does not require the production of dedicated jigs corresponding to various shapes of the resin-sealed substrate, which increases the manufacturing cost. Can be suppressed.

  However, in the tape method, when the periphery of the resin sealing substrate on which the semiconductor device is not formed is not fixed to the UV tape, the resin sealing substrate is pasted when the resin sealing substrate is cut using a cutting blade. The outer frame debris of the semiconductor device is scattered on the UV tape that is not attached and adheres to the UV tape. The outer frame scraps are easily peeled off from the UV tape by UV irradiation applied to the resin-encapsulated substrate in order to make each semiconductor device easily peeled off from the UV tape, and various technical problems described below occur. For example, a suction contact portion for transport is formed on the frame, but if outer frame scraps adhere to this portion, the frame cannot be sucked, and a transport error occurs. In addition, the outer frame waste may contact the semiconductor device and the semiconductor device may be lost, resulting in a deterioration in quality. Further, when the removal of the semiconductor device from the UV tape is completed, the UV tape is peeled off from the frame, and then the frame is washed and recycled. It will clog and cause troubles in the cleaning device. As a result, the productivity of the semiconductor device is reduced due to the outer frame waste generated in the substrate cutting process.

  SUMMARY OF THE INVENTION An object of the present invention is to provide a semiconductor device that is caused by outer frame scraps in a substrate cutting step in which a substrate on which a plurality of semiconductor devices are mounted is bonded to a UV tape and cut into individual semiconductor devices. The object is to provide a technique capable of preventing a decrease in productivity.

  The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.

  Of the inventions disclosed in the present application, the outline of typical ones will be briefly described as follows.

  The method for manufacturing a semiconductor device according to the present invention includes a second UV having a UV irradiation guard mask that can cover the back surface of the first UV tape on which a substrate on which a plurality of semiconductor devices are mounted and a plurality of semiconductor devices are covered. The first UV tape and the second UV tape are arranged so as to face each other with the adhesive surface of the tape facing each other, and the first UV irradiation is performed from the back side of the first UV tape through the second UV tape. After reducing the adhesive force of the adhesive surface other than the area where the semiconductor devices are placed, the substrate is cut along a cutting line to separate a plurality of semiconductor devices, and the outer frame portion of the substrate is eliminated, Thereafter, the second UV irradiation is performed on the first UV tape from the back surface side to reduce the adhesive strength of the adhesive surface of the first UV tape.

  Among the inventions disclosed in the present application, effects obtained by typical ones will be briefly described as follows.

  Prevents a decrease in productivity of semiconductor devices caused by outer frame debris in the substrate cutting process in which a substrate on which a plurality of semiconductor devices are mounted is bonded to a UV tape and cut into individual semiconductor devices. can do.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In the following embodiment, when necessary for the sake of convenience, the description will be divided into a plurality of sections or embodiments. However, unless otherwise specified, they are not irrelevant to each other. Is related to some or all of the other modifications, details, supplementary explanations, and the like. Further, in the following embodiments, when referring to the number of elements (including the number, numerical value, quantity, range, etc.), especially when clearly indicated and when clearly limited to a specific number in principle, etc. Except, it is not limited to the specific number, and may be more or less than the specific number. Further, in the following embodiments, the constituent elements (including element steps and the like) are not necessarily indispensable unless otherwise specified and apparently essential in principle. Needless to say. Similarly, in the following embodiments, when referring to the shapes, positional relationships, etc. of the components, etc., the shapes are substantially the same unless otherwise specified, or otherwise apparent in principle. And the like are included. The same applies to the above numerical values and ranges. In the following embodiments, the term “semiconductor wafer” mainly refers to a Si (silicon) single crystal wafer. However, not only that, but also an SOI (Silicon on Insulator) wafer and an integrated circuit are formed thereon. An insulating film substrate or the like for this purpose. The shape includes not only a circle or a substantially circle but also a square, a rectangle and the like. Also, components having the same function are denoted by the same reference symbols throughout the drawings for describing the embodiments, and the repetitive description thereof is omitted.

  A method of manufacturing a semiconductor device according to an embodiment of the present invention will be described in the order of steps with reference to FIGS. 1, FIG. 5 and FIG. 6 are top views of main parts of the resin-encapsulated substrate during the manufacturing process of the semiconductor device, FIG. 2 is a cross-sectional view of main parts taken along line AA in FIG. 1, and FIG. FIG. 4 and FIG. 7 are principal part sectional views of the resin-encapsulated substrate during the manufacturing process of the semiconductor device. Here, a resin-sealed substrate in which five semiconductor devices each sealed with resin are mounted on the substrate is illustrated, but the number of semiconductor devices is not limited to this. In this embodiment, the semiconductor device is described as including a semiconductor chip in which one active element is formed. However, in addition to one semiconductor chip, a plurality of stacked semiconductor chips or a planar surface is used. A semiconductor device can also be configured by a module or the like including a semiconductor chip arranged on a semiconductor chip and a component such as a single chip or a laminated chip on which passive elements are formed, and the form of the components constituting the semiconductor device is not limited. Absent.

  After the circuit pattern is formed on the semiconductor wafer, a semiconductor product is manufactured through a typical manufacturing process described below, for example. First, the quality of each semiconductor chip formed on the semiconductor wafer is determined by a tester, and a defective marking is placed on the semiconductor chip determined to be defective (wafer test process). Subsequently, after sticking an adhesive tape on the circuit forming surface of the semiconductor wafer, the back surface of the semiconductor wafer (the surface opposite to the circuit forming surface) is ground to make the thickness of the semiconductor wafer a predetermined thickness (back) Grinding process). Subsequently, the semiconductor wafer is washed and dried, and then the semiconductor wafer is replaced with a dicing tape, and the semiconductor wafer is diced (dicing step). Subsequently, after irradiating the semiconductor wafer with UV to make each semiconductor chip easily peeled off from the dicing tape, the semiconductor chip judged to be good in the wafer test process is picked up and mounted on the substrate (die bonding) Step) Further, bonding pads arranged on the edge of the surface of the semiconductor chip and electrode pads on the surface of the substrate are connected using bonding wires (wire bonding step). Subsequently, the semiconductor chip is encapsulated with resin and molded (resin sealing process). For example, bumps made of solder are connected to connection pads on the back surface of the substrate, and then sealed with a single resin from the substrate. A semiconductor chip (hereinafter referred to as a semiconductor device) is cut (substrate cutting step). Thereafter, each finished semiconductor device is sorted according to product standards, and a semiconductor product is completed through an inspection process.

  In the following description, a substrate cutting process for cutting a semiconductor device on a substrate sealed with resin, which is an embodiment of the present invention, into individual semiconductor devices will be described in detail.

  First, as shown in FIGS. 1 and 2, an annular first frame 2 to which a cutting tape, for example, a first UV tape 1 is fixed, is prepared. The periphery of the first UV tape 1 is fixed by a first frame 2. A resin-sealed substrate 5 on which five semiconductor devices each sealed with a resin 4 are mounted on the substrate 3 is affixed to substantially the center of the bonding surface of the first UV tape 1. As the substrate 3, for example, a lead frame, a tape, or the like can be used. At this time, the substrate 3 is the upper surface, the resin 4 for sealing the semiconductor device is the lower surface, and the resin 4 side is attached to the first UV tape 1. The first UV tape 1 uses, for example, polyolefin as a base, an acrylic UV curable adhesive is applied thereon, and a release material made of polyester is further bonded thereon. The release material is, for example, a release paper. The release material is peeled off, and the resin-encapsulated substrate 5 is attached to the first UV tape 1. The thickness of the first UV tape 1 is, for example, 90 μm, and the adhesive strength is, for example, about 200 g / 25 mm before UV irradiation, and about 10 to 20 g / 25 mm after UV irradiation. In addition, you may use the UV tape which does not have a peeling material and which performed the mold release process on the back surface.

  Next, as shown in FIG. 3, an annular second frame 7 to which a guard tape, for example, a second UV tape 6 is fixed, is prepared. The periphery of the second UV tape 6 is fixed by a second frame 7. A UV irradiation guard mask 8 is affixed to substantially the center of the adhesive surface of the second UV tape 6. As the second UV tape 6 to which the UV irradiation guard mask 8 is attached, the same material as that of the first UV tape 1 to which the resin sealing substrate 5 is attached can be used. The second UV tape 6 is not limited to the UV specification, and any material and shape can be used as long as the UV irradiation guard mask 8 can be fixed and UV can be transmitted.

  The second frame 7 for fixing the second UV tape 6 to which the UV irradiation guard mask 8 is attached is the same material as the first frame 2 for fixing the first UV tape 1 to which the resin sealing substrate 5 is attached. The same shape can be used. The UV irradiation guard mask 8 is formed by overlapping the second UV tape 6 with the UV irradiation guard mask 8 and the first UV tape 1 with the resin sealing substrate 5 on top of each other. Of these, it is formed so as to cover only a region where five semiconductor devices are placed.

  Next, as shown in FIG. 4, the UV irradiation guard mask 8 is a resin-encapsulated substrate with the back surface (the surface opposite to the bonding surface) of the first UV tape 1 and the bonding surface of the second UV tape facing each other. 5, the second UV tape 6 to which the UV irradiation guard mask 8 is attached and the first UV tape 1 to which the resin sealing substrate 5 is attached are overlapped so as to cover only the region where the five semiconductor devices are placed. Then, UV irradiation is first performed from the back side of the first UV tape 1 through the second UV tape 6 (first UV irradiation). Thereby, the adhesive force of the adhesive surface other than the region where the five semiconductor devices of the first UV tape 1 are placed is reduced.

  Next, as shown in FIG. 5, the substrate 3 is cut. For example, the first frame 2 for fixing the first UV tape 1 to which the resin sealing substrate 5 is attached is transported to a substrate cutting device, for example, using an ultrathin circular blade to which diamond fine particles called diamond saw are attached, The substrate 3 is cut vertically and horizontally along the cutting line while flowing water. In FIG. 5, a line indicated by a dotted line is a cutting line. The substrate 3 may be cut using a laser method. In that case, there are additional advantages such as making the cutting width very small.

  The resin sealing substrate 5 is divided into individual semiconductor devices sealed with the resin 4, but each semiconductor device is fixed to the first frame 2 via the first UV tape 1 even after being divided into individual pieces. As a result, the alignment is maintained. However, the adhesive force of the adhesive surface other than the area where the five semiconductor devices of the first UV tape 1 are placed is reduced. As a result, as shown in FIG. 6, the outer frame portion (the outer frame portion of the substrate 3 on which the five semiconductor devices are not placed) 3a cut from the substrate 3 is applied to the first UV tape 1 by running water at the time of cutting. Eliminate without gluing.

  Thus, in the substrate cutting step, unnecessary outer frame portion 3a (that is, outer frame scraps) of the substrate 3 can be easily removed, so that, for example, the outer frame is attached to the conveyance contact portion of the first frame 2. It is possible to prevent a conveyance error due to adhesion of scraps and a loss of a semiconductor device due to contact with outer frame scraps. Furthermore, since the clogging of the piping of the cleaning device and the like due to the outer frame scraps is eliminated in the cleaning process when the first frame 2 is recycled, troubles in the cleaning device can be prevented. Further, the unnecessary outer frame portion 3a can be removed in the substrate cutting process by preparing the UV irradiation guard mask 8, the second UV tape 6 to which the mask is applied, and the second frame 7 for fixing the mask. Therefore, an increase in manufacturing cost for the equipment can be suppressed.

  Next, UV is post-irradiated from the back side of the first UV tape 1 (second UV irradiation) to reduce the adhesive force of the adhesive surface in contact with the substrate 3 of the first UV tape 1. Thereby, each semiconductor device is easily peeled off from the first UV tape 1.

  Next, as shown in FIG. 7, the substrate 3 on which the semiconductor device is mounted is vacuum-sucked by the collet 9, whereby the semiconductor devices are separated from the first UV tape 1 and picked up one by one. Since the adhesive force between the first UV tape 1 and the semiconductor device is weakened by the UV post-irradiation, the pickup can be reliably performed. The collet 9 has, for example, a substantially cylindrical outer shape, and the suction portion located at the bottom thereof is made of, for example, soft synthetic rubber. When the removal of the semiconductor device adhered to the first UV tape 1 is completed, the first UV tape 1 is peeled off from the first frame 2 and the first frame 2 is recycled.

  Thereafter, the finished semiconductor products made up of individual semiconductor devices are sorted according to product standards, and the products are completed through an inspection process.

  As described above, according to the present embodiment, since the outer frame waste generated in the substrate cutting process can be eliminated when the substrate 3 is cut, the first UV tape 1 and the first frame 2 after the substrate 3 is cut. The outer frame scraps are not bonded to each other. For example, the transport error due to the outer frame scraps adhering to the conveyance contact portion of the first frame 2 and the loss of the semiconductor device due to the contact of the outer frame scraps are prevented. be able to. Thereby, it is possible to prevent a decrease in productivity of the semiconductor device caused by the outer frame scraps.

  As mentioned above, the invention made by the present inventor has been specifically described based on the embodiment. However, the present invention is not limited to the embodiment, and various modifications can be made without departing from the scope of the invention. Needless to say.

  For example, in the above embodiment, the substrate is, for example, a lead frame or a tape, but the present invention can also be applied to a printed circuit board on which electronic components are mounted with high density.

  Moreover, in the said embodiment, although the frame was cyclic | annular, it is not limited to this, Frames, such as a rectangle, can also be used.

  The semiconductor device manufacturing method of the present invention can be used in a substrate cutting method in which a plurality of semiconductor devices are resin-sealed and molded.

It is a principal part top view of the resin sealing substrate which shows the manufacturing process of the semiconductor device which is one embodiment of this invention. It is principal part sectional drawing in the AA of FIG. It is a principal part top view of the mask for UV irradiation guard which shows the manufacturing process of the semiconductor device which is one embodiment of this invention. It is principal part sectional drawing of the resin sealing substrate and UV irradiation guard mask which show the manufacturing process of the semiconductor device which is one embodiment of this invention. It is a principal part top view of the resin sealing substrate which shows the manufacturing process of the semiconductor device which is one embodiment of this invention. It is a principal part top view of the resin sealing substrate which shows the manufacturing process of the semiconductor device which is one embodiment of this invention. It is principal part sectional drawing of the resin sealing substrate which shows the manufacturing process of the semiconductor device which is one embodiment of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 1st UV tape 2 1st frame 3 Substrate 3a Outer frame part 4 Resin 5 Resin sealing substrate 6 2nd UV tape 7 2nd frame 8 UV irradiation guard mask 9 Collet

Claims (5)

Manufacturing method of semiconductor device having the following steps:
(A) a step of attaching a substrate on which a plurality of semiconductor devices are mounted to the adhesive surface of the first UV tape;
(B) a step of applying a mask for UV irradiation guard capable of covering the plurality of semiconductor devices to the adhesive surface of the second UV tape;
(C) After placing the first UV tape and the second UV tape so that the back surface of the first UV tape and the adhesive surface of the second UV tape are opposed to each other, the first UV tape is interposed through the second UV tape. Performing the first UV irradiation from the back side of the tape, and reducing the adhesive force of the adhesive surface other than the region where the plurality of semiconductor devices of the first UV tape are placed;
(D) cutting the substrate along a cutting line to separate the plurality of semiconductor devices;
(E) performing a second UV irradiation on the first UV tape from the back side thereof to reduce the adhesive strength of the adhesive surface of the first UV tape;
(F) A step of peeling each of the plurality of semiconductor devices from the first UV tape. Manufacturing method of semiconductor device having the following steps:
(A) a step of attaching a substrate on which a plurality of semiconductor devices are mounted to the adhesive surface of the first UV tape;
(B) a step of applying a mask for UV irradiation guard capable of covering the plurality of semiconductor devices to the adhesive surface of the second UV tape;
(C) After placing the first UV tape and the second UV tape so that the back surface of the first UV tape and the adhesive surface of the second UV tape are opposed to each other, the first UV tape is interposed through the second UV tape. Performing the first UV irradiation from the back side of the tape, and reducing the adhesive force of the adhesive surface other than the region where the plurality of semiconductor devices of the first UV tape are placed;
(D) cutting the substrate along a cutting line, separating the plurality of semiconductor devices, and further removing an outer frame portion of the substrate;
(E) performing a second UV irradiation on the first UV tape from the back side thereof to reduce the adhesive strength of the adhesive surface of the first UV tape;
(F) A step of peeling each of the plurality of semiconductor devices from the first UV tape.   3. The method of manufacturing a semiconductor device according to claim 2, wherein in the step (d), the outer frame portion of the substrate is eliminated by running water.   3. The method of manufacturing a semiconductor device according to claim 2, wherein each of the plurality of semiconductor devices is sealed with a resin.   3. The method of manufacturing a semiconductor device according to claim 2, wherein the periphery of the first UV tape is fixed to a first frame, and the periphery of the second UV tape is fixed to a second frame. Method.