FI117032B - Kapacitiv transistor med en-elektron - Google Patents
Kapacitiv transistor med en-elektron Download PDFInfo
- Publication number
- FI117032B FI117032B FI20041000A FI20041000A FI117032B FI 117032 B FI117032 B FI 117032B FI 20041000 A FI20041000 A FI 20041000A FI 20041000 A FI20041000 A FI 20041000A FI 117032 B FI117032 B FI 117032B
- Authority
- FI
- Finland
- Prior art keywords
- measurement
- quantum
- phase
- charge
- quantum bit
- Prior art date
Links
- 239000002096 quantum dot Substances 0.000 claims description 27
- 238000005259 measurement Methods 0.000 claims description 23
- 230000004907 flux Effects 0.000 claims description 3
- 230000008878 coupling Effects 0.000 claims 5
- 238000010168 coupling process Methods 0.000 claims 5
- 238000005859 coupling reaction Methods 0.000 claims 5
- 239000002887 superconductor Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 230000005641 tunneling Effects 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000005610 quantum mechanics Effects 0.000 description 2
- 230000005233 quantum mechanics related processes and functions Effects 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 241000238366 Cephalopoda Species 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 239000010438 granite Substances 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 108010067930 structure-specific endonuclease I Proteins 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/10—Junction-based devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
- G06N10/00—Quantum computing, i.e. information processing based on quantum-mechanical phenomena
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Data Mining & Analysis (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computational Mathematics (AREA)
- Evolutionary Computation (AREA)
- Artificial Intelligence (AREA)
- Mathematical Analysis (AREA)
- Mathematical Optimization (AREA)
- Pure & Applied Mathematics (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Software Systems (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Claims (7)
1. Mätkoppling för bestämning av fasen genom att som mätii använda en en-elektrontransistor, kännetecknad därav a 5 bestämmes genom mätning av kapacitansen mellan gater en en-elektrontransistor.
2. En mätkoppling enligt av krav 1 för att bestämma kvantbitt med hjälp av en en-elektrontransistor, kännetecknad där 10. den kvantbit som skall mätäs är av en sädan art att d kan bestämmas genom en mätning av fasen, ooh - fasmätningen sker genom mätning av kapacitansen r och jorden pä en-elektrontransistom.
3. En mätkoppling enligt nägot av kraven 1 eller 2, kännetec att den kvantbit som skall mätäs är en laddnings-faskvant
4. En mätkoppling enligt nägot av kraven 1-3, känneteckn transistor n s ena Josephson-kontakt (100) är genom en lei 20 sammankopplad med kvantbitens ena Josephson-kontakt transistoms andra Josephson-kontakt (103) är sammankc *.'*Ί annan ledning (104) med kvantbitens andra Josephson-kc samt att nämnda bägge ledningar är kopplade tili jorden s "·*: jordkopplingen är kapacitiv (106 och 107).
5. En mätkoppling enligt nägot av kraven 1 - 4, känneteckn transistoms gaten är kopplad tili en resonanskrets som be e induktans (109) kopplad tili styrspänningen (108) samt en »«« • * . _ 12 1
7. En mätkoppling enligt nägot av kraven 1-6, känneteckn närheten av kopplingen plaoerats en strömkrets eller nägc apparat med vilken man kan ästadkomma en ett magnetfl initierar mätningen. 5
8. En mätkoppling enligt nägot av kraven 1 - 7, känneteckn fasen mätes genom registrering av reflektionen av den sp; som reflekteras frän den yttre kopplingspunkten pä resora M# • 4 • ft »·« • ft » * »·* • ft* ft ft ft ft ··· ft • ft ft «·· ft··* • ft » • ft • ft • •ft ft • ft · ft ft ft ··· iftft ft ft ft ft
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FI20041000A FI117032B (sv) | 2004-07-19 | 2004-07-19 | Kapacitiv transistor med en-elektron |
| US11/630,014 US7550759B2 (en) | 2004-07-19 | 2005-07-18 | Capacitive single-electron transistor |
| PCT/FI2005/000331 WO2006008335A1 (en) | 2004-07-19 | 2005-07-18 | Capacitive single-electron transistor |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FI20041000A FI117032B (sv) | 2004-07-19 | 2004-07-19 | Kapacitiv transistor med en-elektron |
| FI20041000 | 2004-07-19 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| FI20041000A0 FI20041000A0 (sv) | 2004-07-19 |
| FI20041000A FI20041000A (sv) | 2006-01-20 |
| FI117032B true FI117032B (sv) | 2006-05-15 |
Family
ID=32749217
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FI20041000A FI117032B (sv) | 2004-07-19 | 2004-07-19 | Kapacitiv transistor med en-elektron |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US7550759B2 (sv) |
| FI (1) | FI117032B (sv) |
| WO (1) | WO2006008335A1 (sv) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7567138B2 (en) * | 2006-08-29 | 2009-07-28 | Texas Instruments Incorporated | Single-electron injection/extraction device for a resonant tank circuit and method of operation thereof |
| US7615385B2 (en) | 2006-09-20 | 2009-11-10 | Hypres, Inc | Double-masking technique for increasing fabrication yield in superconducting electronics |
| KR20160137148A (ko) * | 2015-05-22 | 2016-11-30 | 에스케이하이닉스 주식회사 | 전자 장치 |
| US10032897B2 (en) | 2016-06-01 | 2018-07-24 | International Business Machines Corporation | Single electron transistor with self-aligned Coulomb blockade |
| JP2020074351A (ja) * | 2017-03-03 | 2020-05-14 | 国立研究開発法人科学技術振興機構 | 変調回路、制御回路、情報処理装置、及び集積方法 |
| US11223347B1 (en) | 2020-12-03 | 2022-01-11 | International Business Machines Corporation | All microwave ZZ control |
| CN118339566A (zh) | 2021-06-11 | 2024-07-12 | 西克公司 | 针对超导量子电路的通量偏置的系统和方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3519303B2 (ja) | 1999-02-18 | 2004-04-12 | 独立行政法人理化学研究所 | 単一磁束量子ディジタル素子 |
| US6803599B2 (en) | 2001-06-01 | 2004-10-12 | D-Wave Systems, Inc. | Quantum processing system for a superconducting phase qubit |
| US20040016918A1 (en) | 2001-12-18 | 2004-01-29 | Amin Mohammad H. S. | System and method for controlling superconducting qubits |
| JP2003249643A (ja) * | 2002-02-25 | 2003-09-05 | Nippon Telegr & Teleph Corp <Ntt> | 高周波単電子トランジスタ回路 |
| US6605822B1 (en) | 2002-03-16 | 2003-08-12 | D-Wave Systems, Inc. | Quantum phase-charge coupled device |
| FR2839389B1 (fr) | 2002-05-03 | 2005-08-05 | Commissariat Energie Atomique | Dispositif de bit quantique supraconducteur a jonctions josephson |
-
2004
- 2004-07-19 FI FI20041000A patent/FI117032B/sv active IP Right Grant
-
2005
- 2005-07-18 US US11/630,014 patent/US7550759B2/en active Active
- 2005-07-18 WO PCT/FI2005/000331 patent/WO2006008335A1/en active Application Filing
Also Published As
| Publication number | Publication date |
|---|---|
| US7550759B2 (en) | 2009-06-23 |
| FI20041000A0 (sv) | 2004-07-19 |
| US20070263432A1 (en) | 2007-11-15 |
| FI20041000A (sv) | 2006-01-20 |
| WO2006008335A1 (en) | 2006-01-26 |
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