DE68919247D1 - Silizium-Gitter als Referenz- und Kalibrierungs-Standard in einem Partikelstrahl-Lithographiesystem. - Google Patents

Silizium-Gitter als Referenz- und Kalibrierungs-Standard in einem Partikelstrahl-Lithographiesystem.

Info

Publication number
DE68919247D1
DE68919247D1 DE68919247T DE68919247T DE68919247D1 DE 68919247 D1 DE68919247 D1 DE 68919247D1 DE 68919247 T DE68919247 T DE 68919247T DE 68919247 T DE68919247 T DE 68919247T DE 68919247 D1 DE68919247 D1 DE 68919247D1
Authority
DE
Germany
Prior art keywords
particle beam
lithography system
beam lithography
calibration standard
silicon grating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68919247T
Other languages
English (en)
Other versions
DE68919247T2 (de
Inventor
Lydia J Young
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Etec Systems Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Etec Systems Inc filed Critical Etec Systems Inc
Publication of DE68919247D1 publication Critical patent/DE68919247D1/de
Application granted granted Critical
Publication of DE68919247T2 publication Critical patent/DE68919247T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30433—System calibration

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electron Beam Exposure (AREA)
DE68919247T 1988-03-14 1989-03-13 Silizium-Gitter als Referenz- und Kalibrierungs-Standard in einem Partikelstrahl-Lithographiesystem. Expired - Fee Related DE68919247T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/167,601 US4885472A (en) 1988-03-14 1988-03-14 Silicon grid as a reference and calibration standard in a particle beam lithography system

Publications (2)

Publication Number Publication Date
DE68919247D1 true DE68919247D1 (de) 1994-12-15
DE68919247T2 DE68919247T2 (de) 1995-03-16

Family

ID=22608021

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68919247T Expired - Fee Related DE68919247T2 (de) 1988-03-14 1989-03-13 Silizium-Gitter als Referenz- und Kalibrierungs-Standard in einem Partikelstrahl-Lithographiesystem.

Country Status (5)

Country Link
US (1) US4885472A (de)
EP (1) EP0333098B1 (de)
JP (1) JP2738558B2 (de)
CA (1) CA1293825C (de)
DE (1) DE68919247T2 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02231708A (ja) * 1989-03-06 1990-09-13 Fujitsu Ltd 半導体装置の位置合わせマーク検出方法及び装置
US5043586A (en) * 1990-10-25 1991-08-27 International Business Machines Corporation Planarized, reusable calibration grids
US5155359A (en) * 1991-04-05 1992-10-13 Metrologix, Inc. Atomic scale calibration system
US5920067A (en) * 1992-03-13 1999-07-06 The United States Of America As Represented By The Secretary Of Commerce Monocrystalline test and reference structures, and use for calibrating instruments
US5345085A (en) * 1993-03-26 1994-09-06 Etec Systems, Inc. Method and structure for electronically measuring beam parameters
US5416821A (en) * 1993-05-10 1995-05-16 Trw Inc. Grid formed with a silicon substrate
US5703373A (en) * 1995-11-03 1997-12-30 The United States Of America As Represented By The Secretary Of The Navy Alignment fiducial for improving patterning placement accuracy in e-beam masks for x-ray lithography
US5747802A (en) * 1996-03-29 1998-05-05 Siemens Aktiengesellschaft Automated non-visual method of locating periodically arranged sub-micron objects
KR100191347B1 (ko) * 1996-08-09 1999-06-15 윤종용 반도체 공정의 주사전자현미경 관리용 미세선폭 관리시료
GB2324650A (en) * 1997-04-25 1998-10-28 Leica Lithography Systems Ltd Pattern-writing machine
US6246053B1 (en) * 1999-03-22 2001-06-12 International Business Machines Corporation Non-contact autofocus height detector for lithography systems
JP2005116731A (ja) * 2003-10-07 2005-04-28 Hitachi High-Technologies Corp 電子ビーム描画装置及び電子ビーム描画方法
ATE537550T1 (de) * 2005-07-08 2011-12-15 Nexgen Semi Holding Inc Vorrichtung und verfahren zur kontrollierten fertigung von halbleitern mittels teilchenstrahlen
WO2008140585A1 (en) 2006-11-22 2008-11-20 Nexgen Semi Holding, Inc. Apparatus and method for conformal mask manufacturing
JP5361137B2 (ja) * 2007-02-28 2013-12-04 株式会社日立ハイテクノロジーズ 荷電粒子ビーム測長装置
EP2003526A1 (de) * 2007-06-13 2008-12-17 Carl Zeiss SMT Limited Verfahren und Vorrichtung zur Steuerung und Überwachung einer Position eines Halteelements
US10991545B2 (en) 2008-06-30 2021-04-27 Nexgen Semi Holding, Inc. Method and device for spatial charged particle bunching
US10566169B1 (en) 2008-06-30 2020-02-18 Nexgen Semi Holding, Inc. Method and device for spatial charged particle bunching
JP5461878B2 (ja) * 2009-04-28 2014-04-02 株式会社ニューフレアテクノロジー ドリフト測定方法、荷電粒子ビーム描画方法および荷電粒子ビーム描画装置
US10807187B2 (en) * 2015-09-24 2020-10-20 Arcam Ab X-ray calibration standard object

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4517465A (en) * 1983-03-29 1985-05-14 Veeco/Ai, Inc. Ion implantation control system
DE3410885A1 (de) * 1984-03-24 1985-10-03 Ibm Deutschland Gmbh, 7000 Stuttgart Fehlerkorrigierte korpuskularstrahllithographie
US4587433A (en) * 1984-06-27 1986-05-06 Eaton Corporation Dose control apparatus

Also Published As

Publication number Publication date
JP2738558B2 (ja) 1998-04-08
CA1293825C (en) 1991-12-31
US4885472A (en) 1989-12-05
DE68919247T2 (de) 1995-03-16
EP0333098B1 (de) 1994-11-09
EP0333098A3 (en) 1990-11-07
JPH0249341A (ja) 1990-02-19
EP0333098A2 (de) 1989-09-20

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: APPLIED MATERIALS, INC. (N.D.GES.D. STAATES DELAWA

8339 Ceased/non-payment of the annual fee