CN116661059B - High-directivity waveguide grating antenna and preparation method thereof - Google Patents
High-directivity waveguide grating antenna and preparation method thereof Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title abstract description 9
- 238000005530 etching Methods 0.000 claims abstract description 48
- 238000000034 method Methods 0.000 claims abstract description 16
- 238000004519 manufacturing process Methods 0.000 claims abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 20
- 238000000151 deposition Methods 0.000 claims description 15
- 235000012239 silicon dioxide Nutrition 0.000 claims description 10
- 239000000377 silicon dioxide Substances 0.000 claims description 10
- 238000005498 polishing Methods 0.000 claims description 9
- 238000005253 cladding Methods 0.000 claims description 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 7
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- 238000001259 photo etching Methods 0.000 abstract description 5
- 230000005693 optoelectronics Effects 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 230000008021 deposition Effects 0.000 description 8
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 8
- 239000000758 substrate Substances 0.000 description 5
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000001514 detection method Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12007—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12007—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer
- G02B6/12009—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer comprising arrayed waveguide grating [AWG] devices, i.e. with a phased array of waveguides
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/124—Geodesic lenses or integrated gratings
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/136—Integrated optical circuits characterised by the manufacturing method by etching
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12083—Constructional arrangements
- G02B2006/12107—Grating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
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Abstract
The invention relates to the technical field of integrated optoelectronic devices, in particular to a high-directivity waveguide grating antenna and a preparation method thereof. Compared with the method of alternately etching grating grooves with different depths and forming grating patterns on the upper surface and the lower surface of the waveguide and staggering the grating patterns in the extending direction, the invention can save a layer of photoetching mask and reduce the manufacturing cost.
Description
Technical Field
The invention relates to the technical field of integrated optoelectronic devices, in particular to a high-directivity waveguide grating antenna and a preparation method thereof.
Background
The waveguide grating is a unit device for emitting light in a waveguide into free space, is generally used as an emitting antenna of an optical phased array, realizes pure solid-state light beam control, is generally formed by etching part of a waveguide layer on the upper surface of the waveguide, but a large amount of light leaks into a substrate, so that the overall insertion loss of the optical phased array is large, the detection distance is limited, and the effective emitting length of the grating is short, which can cause poor detection resolution. The method for reducing the leakage of light to the substrate is to add a reflecting structure below the grating, alternatively etch grating grooves with different depths (patent 'a multilayer structure waveguide grating antenna based on staggered etching and a preparation method thereof applied to an optical phased array', publication number: CN 115220150A), or form grating patterns on the upper and lower surfaces of the waveguide and stagger for a certain length in the extending direction of the grating, and the like. Although the several methods described above may increase the grating directionality, they all increase the complexity of the process, increase the number of photolithographic reticles, increase the manufacturing costs, and require simpler and cost-effective methods to increase the grating directionality.
Disclosure of Invention
The invention aims to provide a high-directivity waveguide grating antenna and a preparation method thereof, which solve the technical problems that the directivity of a grating can be improved, but the complexity of the process is increased, the number of photoetching masks is increased and the manufacturing cost is increased in the prior art.
The invention discloses a high-directivity waveguide grating antenna which comprises an upper layer and a lower layer, wherein the lower layer is a wafer layer, the upper layer is a grating layer, a waveguide pattern is arranged on the top surface of the wafer layer, and a grating is arranged on the top surface of the grating layer.
Further, the grating layer material is silicon nitride.
Further, a shallow etching grating is arranged in the middle of the top surface of the grating layer, side gratings are arranged on two sides of the shallow etching grating, and the side gratings are etching gratings penetrating through the grating layer.
Further, the shallow etched grating and the side grating are staggered by less than 1 mu m in the grating extending direction, and the distance between the shallow etched grating scattering center and the side grating scattering center in the waveguide thickness direction is 0-600nm.
By controlling the staggered distance between the shallow etched grating and the side grating in the extending direction and the distance between the shallow etched grating and the side grating in the thickness direction of the waveguide, the upward emitting proportion, namely the directivity of the grating is improved, and the effective emitting length of the grating is longer due to the double-layer structure.
Further, the thickness of the grating layer is 100nm-500nm.
Further, the grating layer has a thickness of 400nm.
Further, the wafer layer is sequentially a top silicon layer, a silicon dioxide layer and a silicon substrate from top to bottom.
Further, the wafer layer is an SOI wafer (Silicon On Insulator silicon-on-insulator).
Further, a silicon dioxide layer is arranged between the wafer layer and the grating layer.
Further, the thickness of the silicon dioxide layer is 0-500nm.
Further, the thickness of the silicon dioxide layer is 150nm.
Further, an upper cladding layer is arranged above the grating layer.
A preparation method of a high-directivity waveguide grating antenna is provided, and the waveguide grating antenna is prepared.
Further, the method comprises the following steps: s1, preparing a waveguide pattern on a wafer layer;
s2, depositing SiO 2 Layer and to SiO 2 Polishing a layer;
s3, depositing a grating layer with a certain thickness;
s4, etching the grating layer to form an etched grating;
s5, depositing an upper cladding layer.
Further, in the step S4, the grating layer is etched to form a top shallow etching grating, and meanwhile, the side etching grating is etched to the etching depth of the shallow etching grating, the middle shallow etching grating is reserved, and the two side etching gratings are continuously etched until the grating layer in the direction is etched to form the side grating.
Further, in the step S4, the grating layer is etched to form a top shallow etching grating, the middle shallow etching grating is reserved, and then the etching gratings on two sides of the shallow etching grating are continuously etched until the grating layer in the direction is etched to form a side grating.
Further, the deposition method is LPCVD (Low Pressure Chemical Vapor Deposition low pressure chemical vapor deposition) or PECVD (Plasma Enhanced Chemical Vapor Deposition plasma enhanced chemical vapor deposition).
Further, the polishing method is CMP (Chemical Mechanical Polishing chemical mechanical polishing).
Compared with the prior art, the invention has the following beneficial effects:
the method has the advantages that the side etched grating is used as one of the two superimposed gratings, high directivity and long effective emission length are realized, and meanwhile, compared with the method of staggered etching grating grooves with different depths, the method of forming grating patterns on the upper surface and the lower surface of the waveguide and staggering the grating patterns in the extending direction of the grating can save one layer of mask plate, and the manufacturing cost is reduced.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered limiting the scope, and other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of a waveguide grating antenna structure according to the present invention.
Fig. 2 is a schematic diagram of a preparation flow of a waveguide grating antenna according to embodiment 1 of the present invention.
Fig. 3 is a schematic diagram of a preparation flow of a waveguide grating antenna according to embodiment 2 of the present invention.
In the figure: 1-grating layer, 2-waveguide pattern, 3-shallow etched grating, 4-side grating.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more clear, the technical solutions in the embodiments of the present invention will be clearly and completely described below, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments.
Example 1
The utility model provides a high-directivity waveguide grating antenna, shown in fig. 1, includes upper strata and lower floor, the lower floor is the wafer layer, the upper strata is grating layer 1, the wafer layer top surface is provided with waveguide figure 2, grating layer 1 top surface is provided with the grating, grating layer 1 material is the silicon nitride, be shallow etching grating 3 in the middle of the grating layer 1 top surface, shallow etching grating 3 both sides are side grating 4, side grating 4 is the etching grating that will run through of grating layer 1, shallow etching grating 3 with the distance that side grating 4 staggers in the grating extending direction is less than 1 mu m, shallow etching grating 3 scattering center with the distance of side grating 4 scattering center in waveguide thickness direction is 0-600nm, grating layer 1 thickness is 100nm-500nm, preferred grating layer 1 thickness is 400nm, wafer layer from the top down is the top silicon layer in proper order, silicon dioxide layer and silicon substrate, be provided with silicon dioxide layer between wafer layer and grating layer 1, upper grating 1 has the upper strata cladding.
A method for preparing high directivity waveguide grating antenna, as shown in figures 1 and 2, adopts SOI wafer, and is based on photoetching, etching and material deposition, the main process flow is as follows,
step one: first, a waveguide pattern 2 is formed on the top silicon of the SOI wafer by photolithography and etching.
Step two: deposition of SiO on SOI wafers using PECVD 2 CMP of SiO 2 Polishing to 150nm.
Step three: siO after polishing by LPCVD 2 Surface deposition of Si with a thickness of 400nm 3 N 4 。
Step four: and then etching silicon nitride to form a top shallow etching grating 3, and performing photoetching again to form a side grating 4 to obtain a grating layer 1.
Step five: deposition of a SiO layer by PECVD 2 And after CMP, an upper cladding layer of the entire device is formed.
Example 2
The utility model provides a high-directivity waveguide grating antenna, shown in fig. 1, includes upper strata and lower floor, the lower floor is the wafer layer, the upper strata is grating layer 1, the wafer layer top surface is provided with waveguide figure 2, grating layer 1 top surface is provided with the grating, grating layer 1 material is the silicon nitride, be shallow etching grating 3 in the middle of the grating layer 1 top surface, shallow etching grating 3 both sides are side grating 4, side grating 4 is the etching grating that will run through of grating layer 1, shallow etching grating 3 with the distance that side grating 4 staggers in the grating extending direction is less than 1 mu m, shallow etching grating 3 scattering center with the distance of side grating 4 scattering center in waveguide thickness direction is 0-600nm, grating layer 1 thickness is 100nm-500nm, preferred grating layer 1 thickness is 400nm, wafer layer from the top down is the top silicon layer in proper order, silicon dioxide layer and silicon substrate, be provided with silicon dioxide layer between wafer layer and grating layer 1, upper grating 1 has the upper strata cladding.
A method for preparing high directivity waveguide grating antenna, as shown in figures 1 and 3, adopts SOI wafer, and is based on photoetching, etching and material deposition, the main process flow is as follows,
step one: first, a waveguide pattern 2 is formed on the top silicon of the SOI wafer by photolithography and etching.
Step two: deposition of SiO on SOI wafers using PECVD 2 CMP of SiO 2 Polishing to 150nm.
Step three: siO after the upper polishing step by PECVD 2 Surface deposition of Si with a thickness of 400nm 3 N 4 。
Step four: and then etching the silicon nitride to form a top shallow etching grating 3, and simultaneously etching the side etching grating to the etching depth of the shallow etching grating 3, so as to protect the shallow etching grating 3 from continuing to etch the side etching grating until the silicon nitride layer is etched to form a side grating 4, thereby obtaining the grating layer 1.
Step five: deposition of a SiO layer by PECVD 2 And after CMP, an upper cladding layer of the entire device is formed.
The above is an embodiment exemplified in this example, but this example is not limited to the above-described alternative embodiments, and a person skilled in the art may obtain various other embodiments by any combination of the above-described embodiments, and any person may obtain various other embodiments in the light of this example. The above detailed description should not be construed as limiting the scope of the present embodiments, which is defined in the claims and the description may be used to interpret the claims.
Claims (8)
1. The utility model provides a high directivity waveguide grating antenna, its characterized in that includes upper strata and lower floor, the lower floor is the wafer layer, the upper strata is grating layer (1), wafer layer top surface is provided with waveguide figure (2), grating layer (1) top surface is provided with the grating, be shallow etching grating (3) in the middle of grating layer (1) top surface, shallow etching grating (3) both sides are side grating (4), side grating (4) are for the etching grating that will the grating layer runs through, shallow etching grating (3) with side grating (4) stagger below 1 mu m in the grating extending direction, shallow etching grating (3) scattering center with the distance of side grating (4) scattering center in waveguide thickness direction is 0-600nm.
2. A highly directional waveguide grating antenna according to claim 1, characterized in that the grating layer (1) material is silicon nitride.
3. A highly directional waveguide grating antenna according to claim 1, characterized in that the grating layer (1) has a thickness of 100nm-500nm.
4. A high directivity waveguide grating antenna according to claim 1, characterized in that a silicon dioxide layer is arranged between the wafer layer and the grating layer (1).
5. The high directivity waveguide grating antenna according to claim 4, wherein the silicon dioxide layer has a thickness of 0-500nm.
6. A high directivity waveguide grating antenna according to claim 1, characterized in that an upper cladding is provided above the grating layer (1).
7. A method for preparing a high-directivity waveguide grating antenna, characterized in that the high-directivity waveguide grating antenna according to any one of claims 1-6 is prepared.
8. The method of manufacturing a high directivity waveguide grating antenna according to claim 7, comprising the steps of:
s1, preparing a waveguide pattern on a wafer layer;
s2, depositing SiO 2 Layer and to SiO 2 Polishing a layer;
s3, depositing a grating layer with a certain thickness;
s4, etching the grating layer to form an etched grating;
s5, depositing an upper cladding layer.
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