CN112230339A - Grating coupler and preparation method thereof - Google Patents
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- CN112230339A CN112230339A CN202011143700.8A CN202011143700A CN112230339A CN 112230339 A CN112230339 A CN 112230339A CN 202011143700 A CN202011143700 A CN 202011143700A CN 112230339 A CN112230339 A CN 112230339A
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/136—Integrated optical circuits characterised by the manufacturing method by etching
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/124—Geodesic lenses or integrated gratings
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/138—Integrated optical circuits characterised by the manufacturing method by using polymerisation
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
- G02B2006/12061—Silicon
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12133—Functions
- G02B2006/12147—Coupler
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Abstract
The invention provides a grating coupler and a preparation method thereof, and the preparation method of the grating coupler comprises the following steps: providing an SOI substrate, wherein the SOI substrate comprises a silicon substrate layer, a silicon dioxide middle layer and a silicon top layer from bottom to top; etching the silicon top layer to form a first coupling grating; forming a Poly-Si layer on the silicon top layer; etching the Poly-Si layer to form a second coupling grating; the second coupling grating is stacked with the first coupling grating in a staggered manner. According to the grating coupler, the insertion loss of the grating coupler is reduced by forming the Poly-Si layer on the top silicon layer, and the insertion loss is further reduced by the offset design of the second coupling grating and the first coupling grating, and the tolerance of the grating preparation process can be improved by the offset design.
Description
Technical Field
The invention relates to the technical field of photonic devices, in particular to a grating coupler on an SOI substrate and a preparation method thereof.
Background
The development of silicon-based optoelectronics compatible with CMOS processes integrates low-cost technology for producing silicon chips with optical technology, breaking the boundary between traditional electronic computing and fiber-optic communications; meanwhile, the development of high-speed electronic circuits based on the silicon CMOS technology realizes high-performance optical circuits and circuit monolithic integrated chips with certain functions. SOI is the english acronym for Silicon-On-Insulator (Silicon On Insulator), and an SOI substrate is composed of a Silicon substrate layer, a Silicon dioxide intermediate layer and a Silicon top layer which are laminated from bottom to top, wherein the Silicon substrate layer, the Silicon dioxide intermediate layer and the Silicon top layer are parallel to each other. Silicon-based optoelectronic devices compatible with CMOS processes are currently fabricated on SOI (silicon on insulator) substrates.
Over the years, many silicon-based optoelectronic devices have appeared, including optical switches, polarization mode splitters, optical wavelength division multiplexers/demultiplexers, optical filters, optical modems, etc., and grating couplers have played an important role in them, which is the basis of these devices and is also a very effective way to achieve beam coupling between photonic integrated circuits and external optical fibers. Therefore, the development of the silicon-based grating coupler has very important practical value and practical significance. The grating coupler is a device that couples diffracted light into an optical waveguide by the diffraction action of a grating to propagate. The grating is used for realizing the function of the coupler, has the advantages of small coupling area, high coupling efficiency and the like, and is widely used in a plane optical system.
However, the problem that the insertion loss of the grating coupler is large when the grating coupler is used as an input/output interface of an optical chip is found in the prior art. In the prior art, to solve the problem, schemes such as a non-uniform grating design, a bottom reflector design, a top layer silicon-on-silicon epitaxial poly-silicon design and the like are generally adopted to reduce the insertion loss of the grating coupler. Wherein, the minimum size of the grating in the high-performance non-uniform grating coupler is generally below 100 nm, and the requirement on a photoetching machine is high; the bottom reflector process is complex and not easy to implement.
The large insertion loss of the grating coupler increases the on-chip loss of the silicon optical chip, and the energy consumption and the cost of a system. Therefore, how to effectively solve the problem of excessive insertion loss of the grating coupler and reduce the on-chip loss of the silicon optical chip so as to reduce the energy consumption and the cost of the system are problems to be solved urgently in the field.
Disclosure of Invention
The grating coupler can solve the problem of overlarge loss of the grating coupler in the prior art, has a simple process, can reduce the on-chip loss of a silicon optical chip, and can reduce the power requirement on a light source or the sensitivity of a receiver, thereby reducing the energy consumption and the cost of a system.
The purpose of the invention is mainly realized by the following technical scheme.
The invention provides a preparation method of a grating coupler, which comprises the following steps: providing an SOI substrate, wherein the SOI substrate comprises a silicon substrate layer, a silicon dioxide middle layer and a silicon top layer from bottom to top; etching the silicon top layer to form a first coupling grating, wherein the first coupling grating comprises a plurality of first ridges and a plurality of first grooves, and the two first ridges are separated by one first groove; forming a Poly-Si layer on the silicon top layer; etching the Poly-Si layer to form a second coupling grating, wherein the second coupling grating comprises a plurality of second ridges and a plurality of second grooves, and the two second ridges are spaced by one second groove; the first ridges correspond to the second ridges one by one, and the second coupling gratings and the first coupling gratings are stacked in a staggered mode so that the edges of the first ridges and the edges of the second ridges form an offset of a preset distance. The grating coupler obtained by the method can adjust the output waveform of grating diffraction light, realize better matching with fiber mode spots and effectively reduce the insertion loss of the grating coupler. Compared with the design that the first coupling grating and the second coupling grating do not have offset in the prior art, the offset design of the first coupling grating and the second coupling grating improves the tolerance of the grating preparation process.
In the preparation method of the grating coupler of the present invention, the grating periods of the first coupling grating and the second coupling grating may be different, but in a preferred embodiment, the grating periods of the first coupling grating and the second coupling grating are the same.
In a preferred embodiment of the method for manufacturing a grating coupler of the present invention, after the first coupling grating is formed and before the Poly-Si layer is formed, the method further includes the steps of: forming a first cladding layer filling the first coupling grating and flush with a top surface of the top silicon layer.
Further, after forming the second coupling grating, the method further includes the following steps: forming a second cladding layer on the Poly-Si layer, the second cladding layer filling the second coupling grating and being flush with a top surface of the Poly-Si layer.
Preferably, the material of the first cladding layer is silicon dioxide or silicon nitride.
Preferably, the material of the second cladding layer is silicon dioxide or silicon nitride.
In a preferred embodiment of the method for manufacturing a grating coupler of the present invention, the etching depth of the first coupling grating is smaller than the thickness of the silicon top layer, and the etching depth of the second coupling grating is equal to the thickness of the Poly-Si layer.
The present invention also provides a grating coupler comprising: the SOI substrate comprises a silicon substrate layer, a silicon dioxide middle layer and a silicon top layer from bottom to top; a first coupling grating formed on the silicon top layer, the first coupling grating comprising a plurality of first ridges and a plurality of first grooves, two first ridges being spaced apart by one first groove; a Poly-Si layer overlying the silicon top layer; a second coupling grating formed on the Poly-Si layer, the second coupling grating comprising a plurality of second ridges and a plurality of second grooves, two second ridges being spaced apart by one second groove; the first ridges correspond to the second ridges one by one, and the second coupling gratings and the first coupling gratings are stacked in a staggered mode so that the edges of the first ridges and the edges of the second ridges form an offset of a preset distance.
In a preferred embodiment of the grating coupler of the present invention, the grating periods of the first coupling grating and the second coupling grating are the same.
In a preferred aspect of the grating coupler of the present invention, the grating coupler of the present invention further comprises: a first cladding layer filling the first coupling grating and flush with a top surface of the top silicon layer.
Further, the grating coupler of the present invention further includes: a second cladding layer filling the second coupling grating and flush with a top surface of the Poly-Si layer.
In a preferred embodiment of the grating coupler of the present invention, the etching depth of the first coupling grating is smaller than the thickness of the silicon top layer, and the etching depth of the second coupling grating is equal to the thickness of the Poly-Si layer.
Preferably, the material of the first cladding layer is silicon dioxide or silicon nitride.
Preferably, the material of the second cladding layer is silicon dioxide or silicon nitride.
The invention has the beneficial effects that: according to the grating coupler, the insertion loss of the grating coupler is reduced by forming the Poly-Si layer on the top silicon layer, and the insertion loss is further reduced by the offset design of the second coupling grating and the first coupling grating, and the tolerance of the grating preparation process can be improved by the offset design. In the preparation method of the grating coupler, silicon shallow etching is firstly carried out on the silicon top layer to form a first coupling grating, then a Poly-Si layer is formed, and then the Poly-Si layer is etched to form a second coupling grating.
The foregoing description is only an overview of the technical solutions of the present invention, and in order to make the technical solutions of the present invention more clearly understood and to implement them in accordance with the contents of the description, the following detailed description is given with reference to the preferred embodiments of the present invention and the accompanying drawings.
Drawings
Fig. 1 is a schematic structural diagram of a grating coupler according to a preferred embodiment of the present invention.
Fig. 2 to 7 are flow charts of the preparation of the grating coupler of the present invention.
Fig. 8 is a schematic diagram of the insertion loss of the grating coupler of the present invention and a conventional grating coupler.
Fig. 9 is a diagram illustrating the relationship between the offset degree and the insertion loss of the grating coupler according to the present invention.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention. In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
Referring to fig. 1, a schematic structural diagram of a grating coupler according to the present invention is shown, the grating coupler of the present invention includes: the SOI substrate comprises a silicon substrate layer 10, a silicon dioxide middle layer 20 and a silicon top layer 30 from bottom to top; a first coupling grating 31 formed on the silicon top layer 30; a Poly-Si layer 40 overlying the silicon top layer 30; a second coupling grating 41 formed on the Poly-Si layer 40; the second coupling grating 41 is stacked offset from the first coupling grating 31.
The first coupling grating 31 includes a plurality of first ridges and a plurality of first grooves, and two first ridges are spaced apart from each other by one first groove.
The second coupling grating 41 comprises a plurality of second ridges and a plurality of second grooves, two second ridges being spaced apart by one second groove.
The second coupling grating 41 and the first coupling grating 31 are stacked in a staggered manner, specifically, in the present embodiment, the ridges and the slits of the second coupling grating 41 and the first coupling grating 31 are not completely aligned, the first ridges and the second ridges correspond to each other one by one, the first ridges of the first coupling grating 31 and the second ridges of the second coupling grating 41 are staggered in the horizontal direction, and the edges of the first ridges and the edges of the second ridges form a predetermined distance offset by X-offset as labeled in fig. 1. The second coupling grating 41 and the first coupling grating 31 are stacked in a staggered manner, so that the output waveform of grating diffraction light can be adjusted, the grating diffraction light is more matched with the mode spot of the optical fiber, the mode matching between input light and output light is improved, and the coupling efficiency of the grating coupler is improved.
The grating periods of the first coupling grating 31 and the second coupling grating 41 are the same in the preferred embodiment.
In another embodiment of the present invention, the length of the second coupling grating 41 is smaller than that of the first coupling grating 31, the second coupling grating 41 is stacked with a part of the first coupling grating 31 in a staggered manner, and the other part of the first coupling grating 31 is not formed with the Poly-Si layer.
The term "the same grating period" means that the slit width b of the second coupling grating 41 is the same as the slit width of the first coupling grating 31 and the ridge width a of the second coupling grating 41 is the same as the ridge width of the first coupling grating 31. Further improve the mode matching between input light and output light, promoted the coupling efficiency of grating coupler.
The grating period d (d = a + b) of the first coupled grating may be 400-1000 nanometers.
In a preferred embodiment of the present invention, the thickness of the silicon substrate layer 10 is in the range of 100-800 microns, the thickness of the silicon dioxide intermediate layer 20 is in the range of 0.2-4 microns, and the thickness of the silicon top layer 30 is in the range of 100-600 nm. The offset X-offset for the predetermined distance is 0-500 nanometers and may be a reverse offset.
Optionally, the thickness of the first coupling grating 31, i.e. the etching depth of the first coupling grating 31, is 20-500 nm. The first coupling grating may be a shallow etched grating. The so-called shallow etch is to say that the etch depth of the first coupling grating 31 is less than the thickness of the silicon top layer 30.
The second coupling grating 41 is etched back with an etching depth of 100-700nm, and the etching depth of the second coupling grating 41 is equal to the thickness of the Poly-Si layer 40.
In a preferred aspect of the present invention, the grating coupler of the present invention further comprises: a first cladding layer 32, the first cladding layer 32 filling the first coupling grating 31 and being flush with the top surface of the first coupling grating 31. The filling here means that the first cladding layer 32 fills the etched grooves of the first coupling grating 31. The first cladding layer 32 may be used to protect the first coupling grating 31 and form a planar surface to facilitate the deposition of the subsequent Poly-Si layer 40.
Further, the grating coupler of the present invention further includes: a second cladding layer 42, the second cladding layer 42 filling the second coupling grating 41 and being flush with the top surface of the second coupling grating 41. Filling here means that the second cladding layer 42 fills the etched grooves of the second coupling grating 41. The second cladding layer 42 may be used to protect the second coupling grating 41. In another embodiment of the invention, the second cladding layer 42 is higher than the top surface of the second coupling grating 41 and covers the top surface of the second coupling grating 41. Of course, in other embodiments of the invention, the second cladding layer 42 may not be provided.
Optionally, the material of the first cladding layer 32 is silicon dioxide or silicon nitride.
Optionally, the material of the second cladding layer 42 is silicon dioxide or silicon nitride.
The material of the second cladding 42 may be the same as the material of the first cladding 32.
Fig. 2 to 7 are flow charts of the grating coupler according to the present invention.
The preparation method of the grating coupler comprises the following steps:
referring to fig. 2, an SOI substrate is provided, which comprises, from bottom to top, a silicon substrate layer 10, a silicon dioxide intermediate layer 20 and a silicon top layer 30.
Referring to fig. 3, the top silicon layer 30 is etched to form a first coupling grating 31.
The formation process of the first coupling grating 31 may include photolithography, an Inductively Coupled Plasma (ICP) process, a wet etching process, and the like. It is understood that the forming process of the first coupling grating 31 can be selected and adjusted according to the actual application and product performance, and is not further limited herein.
In a preferred embodiment of the invention, the etching depth of the first coupling grating 31 is smaller than the thickness of the top layer of silicon 30.
Referring to fig. 4, a first cladding layer 32 is formed, and the first cladding layer 32 fills the first coupling grating 31 and is flush with the top surface of the first coupling grating 31.
The first cladding layer 32 may be deposited by a PECVD process.
In some embodiments, the first cladding layer 32 may be polished to create a planar surface. In some embodiments, the first cladding layer 32 is polished using a Chemical Mechanical Polishing (CMP) process.
The material of the first cladding layer 32 may be silicon dioxide or silicon nitride.
Referring to fig. 5, a Poly-Si layer 40 is formed on the top silicon layer 30.
In a preferred embodiment of the present invention, the Poly-Si layer 40 is deposited by PECVD techniques.
Referring to fig. 6, the Poly-Si layer 40 is etched to form a second coupling grating 41.
The formation process of the second coupling grating 41 may include photolithography, an Inductively Coupled Plasma (ICP) process, a wet etching process, and the like. It is understood that the forming process of the second coupling grating 41 can be selected and adjusted according to the actual application and product performance, and is not further limited herein.
It is emphasized that the second coupling grating 41 of the present invention is stacked offset from the first coupling grating 31, and the grating periods of the first coupling grating 31 and the second coupling grating 41 are the same. In other embodiments of the present invention, the period of the first coupling grating and the second coupling grating may be different. The term "the same grating period" means that the slit width b of the second coupling grating 41 is the same as the slit width of the first coupling grating 31 and the ridge width a of the second coupling grating 41 is the same as the ridge width of the first coupling grating 31.
Referring to fig. 7, a second cladding layer 42 is formed on the Poly-Si layer 40, and the second cladding layer 42 fills the second coupling grating 41 and is flush with the top surface of the second coupling grating 41.
The second cladding layer 42 may be deposited by a PECVD process.
In some embodiments, the second cladding layer 42 may be polished to create a flat surface. In some embodiments, the second cladding layer 42 is polished using a Chemical Mechanical Polishing (CMP) process.
The material of the second cladding layer 42 may be silicon dioxide or silicon nitride. The material of the second cladding 42 may be the same as the material of the first cladding 32.
The second coupling grating 41 is etched to a depth equal to the thickness of the Poly-Si layer 40.
As shown in fig. 8, in the conventional design, there is no bias between the first coupling grating and the second coupling grating, i.e., offset =0nm, and the insertion loss of the grating coupler is 1.49 dB; the first coupling grating and the second coupling grating are stacked in a staggered way and offset = -70nm (a preferred embodiment of the invention), the insertion loss of the grating coupler of the invention is 1.17dB, and the loss of the grating coupler is reduced by 0.32dB due to the offset design.
As shown in fig. 9, if there is a deviation of ± 30nm between the first coupling grating and the second coupling grating during the process preparation; based on the existing design, the insertion loss of the grating coupler is 1.28-1.78 dB, and the variation range reaches 0.5 dB; based on the design of the invention, the insertion loss of the grating coupler is 1.17-1.24 dB, and the variation range is only 0.07 dB.
The invention has the beneficial effects that: according to the grating coupler, the insertion loss of the grating coupler is reduced by forming the Poly-Si layer on the top silicon layer, and the insertion loss is further reduced by the offset design of the second coupling grating and the first coupling grating, and the tolerance of the grating preparation process can be improved by the offset design. In the preparation method of the grating coupler, silicon shallow etching is firstly carried out on the silicon top layer to form a first coupling grating, then a Poly-Si layer is formed, and then the Poly-Si layer is etched to form a second coupling grating.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (14)
1. A preparation method of a grating coupler is characterized by comprising the following steps:
providing an SOI substrate, wherein the SOI substrate comprises a silicon substrate layer, a silicon dioxide middle layer and a silicon top layer from bottom to top;
etching the silicon top layer to form a first coupling grating, wherein the first coupling grating comprises a plurality of first ridges and a plurality of first grooves, and the two first ridges are separated by one first groove;
forming a Poly-Si layer on the silicon top layer;
etching the Poly-Si layer to form a second coupling grating, wherein the second coupling grating comprises a plurality of second ridges and a plurality of second grooves, and the two second ridges are spaced by one second groove;
the first ridges correspond to the second ridges one by one, and the second coupling gratings and the first coupling gratings are stacked in a staggered mode so that the edges of the first ridges and the edges of the second ridges form an offset of a preset distance.
2. The method of claim 1, wherein the first coupling grating and the second coupling grating have the same grating period.
3. The method of claim 1, further comprising, after forming the first coupling grating and before forming the Poly-Si layer, the steps of:
forming a first cladding layer filling the first coupling grating and flush with a top surface of the top silicon layer.
4. The method of manufacturing a grating coupler according to claim 3, further comprising, after forming the second coupling grating, the steps of:
forming a second cladding layer on the Poly-Si layer, the second cladding layer filling the second coupling grating and being flush with a top surface of the Poly-Si layer.
5. The method of claim 3, wherein the first cladding layer is made of silicon dioxide or silicon nitride.
6. The method of claim 4, wherein the second cladding layer is made of silicon dioxide or silicon nitride.
7. The method of claim 1, wherein the first coupling grating has an etch depth less than the thickness of the top silicon layer, and the second coupling grating has an etch depth equal to the thickness of the Poly-Si layer.
8. A grating coupler, comprising:
the SOI substrate comprises a silicon substrate layer, a silicon dioxide middle layer and a silicon top layer from bottom to top;
a first coupling grating formed on the silicon top layer, the first coupling grating comprising a plurality of first ridges and a plurality of first grooves, two first ridges being spaced apart by one first groove;
a Poly-Si layer overlying the silicon top layer;
a second coupling grating formed on the Poly-Si layer, the second coupling grating comprising a plurality of second ridges and a plurality of second grooves, two second ridges being spaced apart by one second groove;
the first ridges correspond to the second ridges one by one, and the second coupling gratings and the first coupling gratings are stacked in a staggered mode so that the edges of the first ridges and the edges of the second ridges form an offset of a preset distance.
9. The grating coupler of claim 8, wherein the first coupling grating and the second coupling grating have the same grating period.
10. The grating coupler of claim 8, further comprising:
a first cladding layer filling the first coupling grating and flush with a top surface of the top silicon layer.
11. The grating coupler of claim 9, further comprising:
a second cladding layer filling the second coupling grating and flush with a top surface of the Poly-Si layer.
12. The grating coupler of claim 8,
the etching depth of the first coupling grating is smaller than the thickness of the silicon top layer, and the etching depth of the second coupling grating is equal to the thickness of the Poly-Si layer.
13. The grating coupler of claim 10, wherein the first cladding layer is silicon dioxide or silicon nitride.
14. The grating coupler of claim 11, wherein the second cladding layer is silicon dioxide or silicon nitride.
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Cited By (5)
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| CN114488394A (en) * | 2022-01-25 | 2022-05-13 | 中国科学院微电子研究所 | Silicon nitride grating coupler, preparation method thereof and optical device |
| CN114924413A (en) * | 2022-04-28 | 2022-08-19 | 歌尔光学科技有限公司 | Optical waveguide structure, preparation method of optical waveguide structure and head-mounted display device |
| WO2022179534A1 (en) * | 2021-02-24 | 2022-09-01 | The Chinese University Of Hong Kong | High coupling efficiency blazed waveguide grating coupler |
| WO2023143617A1 (en) * | 2022-01-30 | 2023-08-03 | 珠海莫界科技有限公司 | Stacked grating and ar display apparatus |
| CN116661059A (en) * | 2023-07-20 | 2023-08-29 | 上海铭锟半导体有限公司 | High-directivity waveguide grating antenna and preparation method thereof |
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| WO2022179534A1 (en) * | 2021-02-24 | 2022-09-01 | The Chinese University Of Hong Kong | High coupling efficiency blazed waveguide grating coupler |
| CN114488394A (en) * | 2022-01-25 | 2022-05-13 | 中国科学院微电子研究所 | Silicon nitride grating coupler, preparation method thereof and optical device |
| CN114488394B (en) * | 2022-01-25 | 2024-02-13 | 中国科学院微电子研究所 | Silicon nitride grating coupler, preparation method thereof and optical device |
| WO2023143617A1 (en) * | 2022-01-30 | 2023-08-03 | 珠海莫界科技有限公司 | Stacked grating and ar display apparatus |
| CN114924413A (en) * | 2022-04-28 | 2022-08-19 | 歌尔光学科技有限公司 | Optical waveguide structure, preparation method of optical waveguide structure and head-mounted display device |
| CN116661059A (en) * | 2023-07-20 | 2023-08-29 | 上海铭锟半导体有限公司 | High-directivity waveguide grating antenna and preparation method thereof |
| CN116661059B (en) * | 2023-07-20 | 2023-09-26 | 上海铭锟半导体有限公司 | High-directivity waveguide grating antenna and preparation method thereof |
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Application publication date: 20210115 |